JP2001177153A - Light emitting device - Google Patents

Light emitting device

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Publication number
JP2001177153A
JP2001177153A JP35933099A JP35933099A JP2001177153A JP 2001177153 A JP2001177153 A JP 2001177153A JP 35933099 A JP35933099 A JP 35933099A JP 35933099 A JP35933099 A JP 35933099A JP 2001177153 A JP2001177153 A JP 2001177153A
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Japan
Prior art keywords
light
emitting device
light emitting
conversion layer
wavelength conversion
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Pending
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JP35933099A
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Japanese (ja)
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Atsushi Okazaki
淳 岡崎
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Sharp Corp
シャープ株式会社
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Priority to JP35933099A priority Critical patent/JP2001177153A/en
Publication of JP2001177153A publication Critical patent/JP2001177153A/en
Application status is Pending legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device having a wavelength conversion layer in an easily manufacturing form.
SOLUTION: The light emitting device comprises a light emitting diode chip, a transmissive member having a cavity for containing the chip, and a wavelength conversion layer formed on the inner wall surface of the cavity. In this case, the conversion layer is formed by coating it with a liquid wavelength conversion material.
COPYRIGHT: (C)2001,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】この発明は、発光ダイオードチップの発光を蛍光物質によって波長変換して出射する発光装置に関するものである。 TECHNICAL FIELD The present invention relates to a light emitting device which emits the wavelength conversion of light-emitting diode chip by the fluorescent substance.

【0002】 [0002]

【従来の技術】従来より青色や青紫色等の紫外光を発光する発光ダイオードチップの波長を蛍光物質によって紫外光と波長が異なる光、例えば白色光等に変換して出射する発光装置が開発されている。 Conventionally than blue or ultraviolet light by a fluorescent substance wavelength of the light emitting diode chip emitting ultraviolet light of a blue-violet or the like and the light of different wavelengths, the light emitting device that emits, for example, converted into white light or the like has been developed ing. 白色光を出射する発光装置は、各種装置の表示部の照明や一般的な照明として広く用いられている。 Emitting device that emits white light is widely used as lighting and general illumination of the display portion of various devices.

【0003】蛍光物質による波長変換機能を有する従来の発光装置としては、蛍光物質を分散含有するドーム状樹脂成型体を発光ダイオードチップに対して所定の距離を設けて装着し、さらに全体を透明樹脂で封止した発光装置が一般に知られている(例えば、特開平7−193 As a conventional light emitting device having a wavelength converting function by the fluorescent substance, the dome-shaped resin molded body containing dispersed fluorescent material emitting diodes with a predetermined distance to the chip mounted, further the entire transparent resin in sealed light emitting devices are generally known (e.g., JP-a-7-193
281号公報参照)。 See JP 281).

【0004】 [0004]

【発明が解決しようとする課題】従来の発光装置はその製造工程において、まず蛍光物質を分散含有するドーム状樹脂成型体を成型し、次に、成型されたドーム状樹脂成型体が発光ダイオードチップを覆うように配置した後、更に全体を透明樹脂で封止する必要がある。 In [0008] Conventional light emitting device manufacturing process, the fluorescent substance was molded domed resin molded body dispersed therein first, then molded dome-shaped resin molded body is a light emitting diode chip after placement to cover the needs of sealing further across a transparent resin. このため、従来の発光装置は製造工程が複雑であった。 Therefore, the conventional light emitting device manufacturing process is complicated.

【0005】この発明は以上のような事情を考慮してなされたものであり、波長変換層を蛍光物質を含む液状の波長変換材料の塗布によって形成することにより、製造が容易な発光装置を提供するものである。 [0005] The present invention has been made in view of the circumstances described above, by forming the wavelength conversion layer by a coating of the wavelength converting material in a liquid containing a fluorescent substance, provide an easy-emitting device is manufactured it is intended to.

【0006】 [0006]

【課題を解決するための手段】この発明は、発光ダイオードチップと、前記チップを収容するための空洞を有する透光性部材と、空洞内壁面に形成された波長変換層とを備え、前記波長変換層は液状の波長変換材料を塗布することにより形成された発光装置を提供するものである。 SUMMARY OF THE INVENTION This invention comprises a light emitting diode chip, and the translucent member having a cavity for receiving the chip, and a wavelength conversion layer formed in the cavity inner wall, said wavelength conversion layer is to provide a light emitting device formed by applying a wavelength converting material liquid.

【0007】 [0007]

【発明の実施の形態】この発明の発光装置においては、 DETAILED DESCRIPTION OF THE INVENTION In the light emitting device of the present invention,
発光ダイオードチップが紫外光を出射する紫外発光ダイオードチップであり、波長変換層を形成する波長変換材料は紫外光を受けて紫外光と波長が異なる光に変換する蛍光物質を含むことが好ましい。 Light-emitting diode chips are ultraviolet light emitting diode chip emits ultraviolet light, it is preferable wavelength converting material forming a wavelength conversion layer containing a fluorescent substance for converting receiving ultraviolet light to ultraviolet light and different wavelengths of light.

【0008】なお、この発明において紫外光とは紫外線を含む青色光、青紫色光をさし、紫外発光ダイオードチップとは窒化ガリウム系化合物を材料とした発光強度のピークが約360nm〜430nmの範囲内にある発光ダイオードチップをさす。 [0008] Incidentally, the blue light and ultraviolet light including ultraviolet in the present invention, the blue-violet refers to light, ultraviolet light-emitting diode chips range peak of the emission intensity of about 360nm~430nm that the gallium nitride compound material and refers to light emitting diode chip is within. 紫外発光ダイオードチップは上述のとおり短い波長を発するので蛍光物質を励起させて長波長の光を発光させる場合に都合がよい。 It is convenient if the ultraviolet light-emitting diode chip which excites the fluorescent substance to emit light of longer wavelength because emits short wavelength as described above.

【0009】この発明の発光装置においては、波長変換層が紫外光を黄色光に変換するようにしてもよい。 [0009] In the light emitting device of the present invention, the wavelength conversion layer with ultraviolet light may be converted into yellow light. 波長変換層に入射する紫外光の全てが黄色光に変換されると発光装置から出射される光は黄色光となる。 Light all ultraviolet light incident on the wavelength conversion layer is emitted from the light emitting device to be converted into yellow light becomes yellow light. しかし、波長変換層に含まれる蛍光物質の量や波長変換層の厚さによっては、紫外光の一部のみが黄色光に変換され、発光装置からは紫外光(青色光)と黄色光とを混合した光が出射される。 However, depending on the thickness of the amount and the wavelength conversion layer of a fluorescent substance contained in the wavelength conversion layer, only a portion of the ultraviolet light is converted into yellow light, from the light emitting device ultraviolet light (blue light) and yellow light mixed light is emitted.

【0010】また、波長変換層が紫外光を赤色光と緑色光に変換するようにしてもよい。 [0010] It is also possible to the wavelength conversion layer converts the ultraviolet light into red light and green light. この場合にも、波長変換層に含まれる蛍光物質の量及び波長変換層の厚さによっては、紫外光の一部のみが赤色光と緑色光に変換され、発光装置からは赤色光と緑色光と紫外光(青色光) In this case, depending on the thickness of the amount and the wavelength conversion layer of a fluorescent substance contained in the wavelength conversion layer, only a portion of the ultraviolet light is converted into red light and green light, red light and green light from the light emitting device and ultraviolet light (blue light)
とを混合した光が出射される。 Mixed light is emitted and. つまり、青色光と黄色光とを混合、または赤色光と緑色光と青色光とを混合すれば様々な色の光、例えば白色光等を発光装置から出射することができる。 That is, it is possible to emit by mixing a mixture of blue light and yellow light, or red light, green light and blue light different colors of light, such as white light or the like from the light-emitting device.

【0011】紫外光を黄色光に変換する場合に好ましい蛍光物質としては、イットリウム・アルミニウム・ガーネット(以下、この明細書においてYAGと称する)系の蛍光物質を挙げることができる。 [0011] The ultraviolet light as preferred fluorescent substance to convert the yellow light, yttrium aluminum garnet (hereinafter, this is referred to as YAG in the specification) may be mentioned fluorescent substance system.

【0012】この発明の発光装置において、透光性部材の材料にはエポキシ樹脂、シリコン樹脂、ウレタン樹脂及びナイロン樹脂等を用いることができる。 [0012] In the light emitting device of the present invention, the material of the light transmissive member may be used epoxy resins, silicone resins, urethane resins and nylon resins. また、この発明の発光装置において波長変換材料とは、液状のエポキシ樹脂、シリコン樹脂又はウレタン樹脂等に蛍光物質を混合したものをさす。 Further, the wavelength converting material in the light-emitting device of the present invention refers to those liquid epoxy resin, a silicone resin or urethane resin or the like mixed with a fluorescent substance.

【0013】波長変換材料は成型された透光性部材に塗布されるが、具体的な塗布方法としては(1)液状吐出装置を用いて塗布するする方法、(2)噴霧装置を用いて噴霧する方法等を挙げることができる。 [0013] Although the wavelength converting material is applied to the light-transmissive member which is molded, as a specific application method (1) a method of coating by using a liquid discharge apparatus, with (2) spraying device spraying How to, and the like can be given.

【0014】なお、この発明の発光装置においては、上記の紫外発光ダイオードチップの他にもガリウムヒ素を材料とした赤外線発光ダイオード、ガリウム・アルミニウムヒ素を材料とした赤色発光ダイオード、ガリウムヒ素燐を材料とした橙色または黄色発光ダイオード、ガリウム燐に窒素をドープした黄緑色発光ダイオード等の様々な発光ダイオードを用いることができる。 [0014] Note that, in the light-emitting device of the invention, the ultraviolet light emitting diode chip in addition to the infrared light-emitting diode in which the gallium arsenide and the material also, the red light-emitting diode in which the aluminum gallium arsenide and material, gallium Motrin material it can be used as the orange or yellow light emitting diodes, a variety of light-emitting diodes of the yellowish green light-emitting diodes or the like which nitrogen was doped gallium phosphide.

【0015】また、蛍光物質についても上述のYAG等の他、基体として、亜鉛、カドミウム、マグネシウム、 [0015] Another such as YAG described above also fluorescent substance, as a base, zinc, cadmium, magnesium,
シリコン、イットリウム等の稀土類元素等の酸化物、硫化物、珪酸塩、バナジン酸塩等の無機蛍光物質、またはフルオレセイン、エオシン、油類(鉱物油)等の有機蛍光物質から選択し、付活体として、銀、銅、マンガン、 Silicon, oxides such as rare earth elements and yttrium, selected from organic fluorescent substance such as sulfide, silicate, inorganic fluorescent substance or fluorescein, eosin, oils, such as vanadate (mineral oil), Tsukekatsutai as, silver, copper, manganese,
クロム、ユウロビウム、亜鉛、アルミニウム、鉛、リン、砒素、金などから選択し、融剤として、塩化ナトリウム、塩化カリウム、炭酸マグネシウム、塩化バリウムなどから選択されたものを用いることができる。 Chromium, select europium, zinc, aluminum, lead, phosphorus, arsenic, etc. gold, as a flux, sodium chloride, potassium chloride, magnesium carbonate, may be used those selected from barium chloride.

【0016】この発明の発光装置は、上述の発光ダイオードと蛍光物質の組み合わせ次第で、構造を変更することなく様々な色の光を出射することができる。 The light emitting device of the present invention, depending on the combination of the above light-emitting diode and a fluorescent substance can emit light of various colors without changing the structure.

【0017】 [0017]

【実施例】以下に図面に示す実施例の基づいてこの発明を詳述する。 EXAMPLES Based the embodiments shown in the accompanying drawing The present invention will be described in detail. なお、この実施例によってこの発明が限定されるものではない。 It should be understood that the examples the invention is not limited.

【0018】 実施例1この発明の実施例1について図1に基づいて説明する。 [0018] For Example 1 Example 1 of the present invention will be described with reference to FIG.
図1に示される発光装置1は、発光ダイオードチップ2 The light emitting device 1 shown in FIG. 1, the light emitting diode chip 2
と、発光ダイオードチップ2を収容するための透光性部材3と、空洞内壁面に形成された波長変換層4とを備え、波長変換層4は液状の波長変換材料を塗布することにより形成されている。 When, the light emitting diode and a light-transmissive member 3 for accommodating the chip 2, and a wavelength conversion layer 4 formed on the cavity inner wall, the wavelength conversion layer 4 is formed by applying a wavelength converting material in liquid ing.

【0019】透光性部材3の内壁面は半球状に成型されているので、波長変換層4も半球状に形成される。 [0019] Since the inner wall surface of the light transmissive member 3 is formed into a hemispherical shape, the wavelength converting layer 4 is also formed in a hemispherical shape. これにより、発光ダイオード2から出射された光が均一に波長変換層4を透過し、波長変換されるので、発光装置から出射される光の色は、見る方向によって色が異なる等の色ムラがない均一な色になる。 Thus, the transmitted light is uniformly wavelength conversion layer 4 emitted from the light emitting diode 2, since the wavelength conversion, the color of the light emitted from the light emitting device, color unevenness such as a different color depending on the viewing direction It becomes no uniform color.

【0020】また、樹脂成型体5は、第1、第2リードピン6、7が保持された金型内に熱硬化性樹脂を射出成型法によって注入して成型されたものである。 Further, the resin molded body 5, the first one in which a thermosetting resin is molded by injecting the injection molding method in the second lead pin in 6,7 mold maintained is. なお、リードピン6、7の材料にはCu又はFe系の材料を用いている。 Note that the material of the lead pins 6 and 7 are made of Cu or Fe-based material. 発光ダイオードチップ2は窒化ガリウム系化合物を材料とし、波長約360〜430nmの紫外線を含む青色光(青紫色光)を出射する紫外発光ダイオードチップである。 Emitting diode chip 2 of gallium nitride-based compound as a material, a ultraviolet light-emitting diode chip that emits blue light (blue-violet light) containing the ultraviolet wavelength of about 360~430Nm.

【0021】発光ダイオードチップ2は、第1リードピン6の凹状に窪んだカップ部8に銀ペースト(図示せず)を用いて設置されている。 The light emitting diode chip 2 with the silver paste (not shown) is installed in the cup portion 8 which is recessed into a concave shape of the first lead pin 6. 発光ダイオードチップ2 LED chip 2
の2つの電極(図示せず)は、金線9によって第1リードピン6と第2リードピン7にそれぞれ電気的に接続されている。 Two electrodes (not shown) is electrically connected to the first lead pin 6 by gold wires 9 to the second lead pin 7.

【0022】また、発光装置1の製造手順は以下の通りである。 Further, the procedure of manufacturing the light emitting device 1 is as follows. 透光性部材3を射出成型で成型する。 The transparent member 3 is molded by injection molding. 成型された透光性部材3の内壁面に波長変換材料を噴霧して塗布し、波長変換層4を形成する。 A wavelength converting material on the inner wall surface of the molded transparent member 3 is sprayed to the coating to form a wavelength converting layer 4. 第1、第2リードピン6、7を金型内に保持した状態で樹脂成型体5を成型する。 First, molding the resin molded body 5 in a state where the second lead pins 6 and 7 were held in the mold. 第1リードピン6のカップ部8に発光ダイオードチップ2を銀ペーストを用いて固定する。 An LED chip 2 in the cup portion 8 of the first lead pin 6 fixed using a silver paste. 紫外発光ダイオードチップ2と第1、第2リードピン6、7に金線9をワイヤボンディングする。 Ultraviolet light-emitting diode chip 2 and the first, the gold 9 wirebonding to the second lead pins 6 and 7. 透光性部材3を樹脂成型体5にエポキシ接着剤で接着する。 The transparent member 3 is bonded with an epoxy adhesive to the resin molded body 5.

【0023】発光装置1は、発光ダイオードチップ2から出射される青色光の一部が波長変換層4を透過する際に黄色光に波長変換されるので、発光装置1から出射される光は青色光と黄色光とを混合した光、例えば白色光となる。 The light emitting device 1, since the wavelength-converted into yellow light when the part of the blue light emitted from the light emitting diode chip 2 is transmitted through the wavelength conversion layer 4, the light emitted from the light emitting device 1 is blue light of a mixture of light and yellow light, for example white light.

【0024】また、発光装置1の波長変換層4は、上述のように波長変換材料を透光性部材3の内壁面に噴霧して塗布することにより形成されている。 Further, the wavelength conversion layer 4 of the light-emitting device 1 is formed by applying by spraying a wavelength converting material on the inner wall surface of the light transmissive member 3 as described above. これにより、リードピン6、7及び発光ダイオード2がセットされた樹脂成型体5に波長変換層4が形成された透光性部材3をエポキシ接着剤で接着するだけで発光装置1を完成させることができる。 Thus, it possible to complete the light emitting device 1 by simply bonding a transparent member 3 of the wavelength converting layer 4 is formed on the resin molded body 5 which lead pins 6 and 7 and the light emitting diode 2 is set in an epoxy adhesive it can. 従って、発光装置1は従来の発光装置よりも製造が容易になっている。 Accordingly, the light emitting device 1 is in the easier to manufacture than the conventional light emitting device.

【0025】 実施例2この発明の実施例1について図2に基づいて説明する。 [0025] For Example 2 Example 1 of the present invention will be described with reference to FIG.
図2に示される発光装置21は、図1に示される発光装置1の樹脂成型体5を上部が開口した箱型形状の樹脂成型体5bに変更してチップ部品型とし、それに伴い透光性部材3b、第1、第2リードピン6b、7bの形状にも変更を加えたものである。 The light emitting device shown in FIG. 2 21 a chip-type was changed to the resin molded body 5b of the box-shaped resin molded body 5 of the light emitting device 1 an open top as shown in FIG. 1, the light-transmitting with it member 3b, first, second lead pins 6b, is obtained also changes the shape of 7b.

【0026】リードピン6b、7bは樹脂成型体5bの底面にリードピン6b、7bの一端が露出し、他端が樹脂成型体5bの壁部を貫通して裏側に回り込むように配置されている。 The lead pin 6b, 7b are lead pins 6b to the bottom surface of the resin molded body 5b, one end of 7b is exposed and the other end is arranged so as to wrap around the back side through the wall portion of the resin molded body 5b. これは、リードピン6b、7bが保持された金型内に耐熱性樹脂を注入する射出成型法で製造することができる。 This can be produced by injection molding for injecting a heat resistant resin to the lead pin 6b, 7b is a mold held. また別の方法としては、樹脂成型体5 In another method, the resin molded body 5
bの成型時にリードピン6b、7b挿入用の穴を形成しておき、樹脂成型体5bの成型後にリードピン6b、7 b lead pin 6b during molding of previously formed holes for 7b inserted, the lead pin after molding of the resin molded body 5b 6b, 7
bを挿入して適宜接着剤等で固定する方法等でもよい。 b may be a method for fixing at the inserted appropriately adhesive or the like.

【0027】透光性部材3bは樹脂成型体5bの内壁にぴったり嵌まる形状に成型され、樹脂成型体5bの内壁にエポキシ接着剤で接着されている。 The translucent member 3b is formed into a fit snugly shape to the inner wall of the resin molded body 5b, it is bonded with an epoxy adhesive to the inner wall of the resin molded body 5b. その他の構成及び製造手順は図1に示される実施例1の発光装置1と同じである。 Other configurations and manufacturing procedures are the same as the light emitting device 1 of Example 1 shown in FIG.

【0028】 実施例3この発明の実施例3について図3に基づいて説明する。 [0028] For Example 3 Example 3 of the present invention will be described with reference to FIG.
図3に示される発光装置31は、図1に示される発光装置1の樹脂成型体5と第1、第2リードピン6、7をプリント基板5cに変更し、更に透光性部材3cの形状も変更したものである。 The light emitting device 31 shown in FIG. 3, the resin molded body 5 and the first light emitting device 1 shown in FIG. 1, the second lead pins 6 and 7 to change the printed circuit board 5c, the shape of the further light transmissive member 3c it is modified. プリント基板5cはガラスエポキシ樹脂からなる基板上の必要箇所に無電解メッキ法によって銅のメッキ層からなる第1パターン6c、第2パターン7cが形成されたものであるが、その他公知の基板材料を用いてもよい。 PCB 5c first pattern 6c consisting plating layer of copper by an electroless plating method necessary portions on the substrate made of glass epoxy resin, but in which the second pattern 7c is formed, an other known substrate materials it may be used. プリント基板5cの表面には透光性部材3cがエポキシ接着剤で接着されている。 Transmissive member 3c is bonded with epoxy adhesive to the surface of the printed circuit board 5c. その他の構成及び製造手順は図1に示される実施例1の発光装置1と同じである。 Other configurations and manufacturing procedures are the same as the light emitting device 1 of Example 1 shown in FIG.

【0029】以上、この発明の実施例1〜3について説明したが、窒化ガリウム系化合物を材料とする発光ダイオードチップ2、2b及び2cは、一般的に静電耐圧が100V以下と低いので、サージ破壊から発光ダイオードチップ2、2b及び2cを保護するためにツェナーダイオードを回路に組み入れてもよい。 [0029] Having described embodiments 1-3 of the present invention, the light emitting diode chip 2,2b and 2c to a gallium nitride-based compound material, since generally the electrostatic withstand voltage below the low 100 V, surge the zener diode may be incorporated into the circuit in order to protect the LED chip 2,2b and 2c from destruction. 光源としては発光ダイオードチップ2、2b及び2c以外に半導体レーザチップを用いてもよい。 As the light source may be a semiconductor laser chip in addition to the light emitting diode chip 2,2b and 2c. この場合にはエポキシ樹脂にシリコンフィラーなどの分散剤を混ぜて透光性部材を成型し、半導体レーザチップから出射されるコヒーレント光を目に安全な非コヒーレント光に変換して出射することが好ましい。 In this case mixed with dispersing agents such as silicon filler in an epoxy resin by molding translucent member, it is preferable to emit converted to secure non-coherent light into the eye of the coherent light emitted from the semiconductor laser chip .

【0030】 [0030]

【発明の効果】この発明によれば、液状の波長変換材料を塗布することにより波長変換層を形成するので、製造が容易な発光装置を提供することができる。 Effects of the Invention According to the present invention, because it forms a wavelength conversion layer by applying a wavelength converting material liquid, can be produced to provide an easy-emitting device.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】この発明の発光装置の実施例1の形態を示す部分断面図である。 1 is a partial sectional view showing the embodiment of Example 1 of the light-emitting device of the present invention.

【図2】この発明の発光装置の実施例2の形態を示す部分断面図である。 2 is a partial sectional view showing the Embodiment Example 2 of the light-emitting device of the present invention.

【図3】この発明の発光装置の実施例2の形態を示す部分断面図である。 3 is a partial sectional view showing the Embodiment Example 2 of the light-emitting device of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1・・・発光装置 2・・・発光ダイオードチップ 3・・・透光性部材 4・・・波長変換層 5・・・樹脂成型体 6・・・第1リードピン 7・・・第2リードピン 8・・・カップ部 9・・・金線 1 ... light emitting device 2 ... light-emitting diode chip 3, ... light-transmitting member 4 ... wavelength conversion layer 5: the resin molded body 6 ... first lead pin 7 ... second lead pin 8 ... cup portion 9 ... gold wire

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 発光ダイオードチップと、前記チップを収容するための空洞を有する透光性部材と、空洞内壁面に形成された波長変換層とを備え、前記波長変換層は液状の波長変換材料を塗布することにより形成された発光装置。 1. A light emitting diode chip and a translucent member having a cavity for receiving the chip, and a wavelength conversion layer formed in the cavity inner wall surface, the wavelength conversion layer is a wavelength converting material in a liquid phase light-emitting device formed by applying.
  2. 【請求項2】 発光ダイオードチップが紫外光を出射する紫外発光ダイオードチップであり、波長変換層を形成する波長変換材料は紫外光を受けて紫外光と波長が異なる光に変換する蛍光物質を含む請求項1に記載の発光装置。 Wherein a ultraviolet light emitting diode chip emitting diode chip emits ultraviolet light, a wavelength converting material forming the wavelength conversion layer comprises a fluorescent substance for converting receiving ultraviolet light to ultraviolet light and the wavelength is different from the light the light emitting device according to claim 1.
  3. 【請求項3】 波長変換層が紫外光を黄色光に変換する請求項2に記載の発光装置。 3. A light emitting device according to claim 2, the wavelength converting layer converts the ultraviolet light into yellow light.
  4. 【請求項4】 波長変換層が紫外光を赤色光と緑色光に変換する請求項2に記載の発光装置。 4. A light emitting device according to claim 2, the wavelength converting layer converts the ultraviolet light into red light and green light.
JP35933099A 1999-12-17 1999-12-17 Light emitting device Pending JP2001177153A (en)

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Cited By (15)

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US6809342B2 (en) 2002-05-31 2004-10-26 Stanley Electric Co., Ltd. Light-emitting device and manufacturing method thereof
JP2006032500A (en) * 2004-07-13 2006-02-02 Fujikura Ltd Light emitting diode lamp and method of manufacturing same
JP2007214592A (en) * 2007-04-26 2007-08-23 Kyocera Corp Light emitting apparatus
JP2009545888A (en) * 2006-08-03 2009-12-24 インテマティックス・コーポレーションIntematix Corporation led illumination arrangement includes light emitting phosphor
US8604678B2 (en) 2010-10-05 2013-12-10 Intematix Corporation Wavelength conversion component with a diffusing layer
US8610340B2 (en) 2010-10-05 2013-12-17 Intematix Corporation Solid-state light emitting devices and signage with photoluminescence wavelength conversion
US8610341B2 (en) 2010-10-05 2013-12-17 Intematix Corporation Wavelength conversion component
US8614539B2 (en) 2010-10-05 2013-12-24 Intematix Corporation Wavelength conversion component with scattering particles
US8901585B2 (en) 2003-05-01 2014-12-02 Cree, Inc. Multiple component solid state white light
US8957585B2 (en) 2010-10-05 2015-02-17 Intermatix Corporation Solid-state light emitting devices with photoluminescence wavelength conversion
US9142734B2 (en) 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9512970B2 (en) 2013-03-15 2016-12-06 Intematix Corporation Photoluminescence wavelength conversion components
US9546765B2 (en) 2010-10-05 2017-01-17 Intematix Corporation Diffuser component having scattering particles
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809342B2 (en) 2002-05-31 2004-10-26 Stanley Electric Co., Ltd. Light-emitting device and manufacturing method thereof
US9142734B2 (en) 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
US8901585B2 (en) 2003-05-01 2014-12-02 Cree, Inc. Multiple component solid state white light
JP4583826B2 (en) * 2004-07-13 2010-11-17 株式会社フジクラ LED lamp and the LED lamp manufacturing process
JP2006032500A (en) * 2004-07-13 2006-02-02 Fujikura Ltd Light emitting diode lamp and method of manufacturing same
US9595644B2 (en) 2006-08-03 2017-03-14 Intematix Corporation LED lighting arrangement including light emitting phosphor
US9045688B2 (en) 2006-08-03 2015-06-02 Intematix Corporation LED lighting arrangement including light emitting phosphor
JP2009545888A (en) * 2006-08-03 2009-12-24 インテマティックス・コーポレーションIntematix Corporation led illumination arrangement includes light emitting phosphor
JP2007214592A (en) * 2007-04-26 2007-08-23 Kyocera Corp Light emitting apparatus
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8614539B2 (en) 2010-10-05 2013-12-24 Intematix Corporation Wavelength conversion component with scattering particles
US8610341B2 (en) 2010-10-05 2013-12-17 Intematix Corporation Wavelength conversion component
US8610340B2 (en) 2010-10-05 2013-12-17 Intematix Corporation Solid-state light emitting devices and signage with photoluminescence wavelength conversion
US9546765B2 (en) 2010-10-05 2017-01-17 Intematix Corporation Diffuser component having scattering particles
US8604678B2 (en) 2010-10-05 2013-12-10 Intematix Corporation Wavelength conversion component with a diffusing layer
US8957585B2 (en) 2010-10-05 2015-02-17 Intermatix Corporation Solid-state light emitting devices with photoluminescence wavelength conversion
US9512970B2 (en) 2013-03-15 2016-12-06 Intematix Corporation Photoluminescence wavelength conversion components

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