US20130210245A1 - Interposer and method for producing holes in an interposer - Google Patents

Interposer and method for producing holes in an interposer Download PDF

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Publication number
US20130210245A1
US20130210245A1 US13/807,386 US201113807386A US2013210245A1 US 20130210245 A1 US20130210245 A1 US 20130210245A1 US 201113807386 A US201113807386 A US 201113807386A US 2013210245 A1 US2013210245 A1 US 2013210245A1
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interposer
holes
glass
base substrate
board
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Oliver Jackl
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Schott AG
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Schott AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0093—Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/126—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of gases chemically reacting with the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/42—Plastics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10378—Interposers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/087—Using a reactive gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

Definitions

  • the invention relates to interposers for electrically connecting the terminals of a CPU chip and a circuit board, and further relates to methods used in a critical manufacturing step of interposers.
  • a CPU chip as a processor core, typically has several hundred contact points on its bottom surface, which are closely spaced to one another and distributed over a relatively small area. Due to this close spacing, these contact points cannot be mounted directly to a circuit board, the so called motherboard. Therefore, an intermediate part is employed which permits to enlarge the connection base.
  • a glass fiber mat encased in epoxy material is employed, which is provided with a number of holes. Conductive paths running on one surface of the glass fiber mat extend into respective holes to fill them and to lead to the terminals of the processor core at the other surface of the glass fiber mat.
  • an underfill is applied both around the processor core and between the processor core and the glass fiber mat, which protects the wires and mechanically joins the processor core and the glass fiber mat.
  • the processor core and the glass fiber mat exhibit different thermal expansions.
  • the glass fiber mat has an expansion coefficient from 15 to 17 ⁇ 10 ⁇ 6 /K
  • the silicon-based core processor has a thermal expansion factor from 3.2 to 3.3 ⁇ 10 ⁇ 6 /K. Therefore, in case of heating there are differential expansions between the core processor and the glass fiber mat and hence mechanical stresses arise between these two components. This can be detrimental to the contact connections, especially when the two components are not completely joined face to face. In this case the contact points may break easily.
  • Another drawback of using a glass fiber mat is related to the mechanical drilling of holes into the glass fiber mat.
  • the hole diameter is limited to 250 to 450 ⁇ m.
  • U.S. 2002/0180015 A1 discloses a multi-chip module which includes semiconductor devices and a wiring substrate for mounting the semiconductor devices.
  • the wiring substrate comprises a glass substrate having holes which were formed by a sand blasting treatment.
  • a wiring layer is formed on the surface of the glass substrate.
  • the glass substrate has wirings and an insulation layer. It is aimed at selecting the coefficient of thermal expansion of the glass substrate close to the coefficient of silicon.
  • U.S. Pat. No. 5,216,207 discloses ceramic multilayer circuit boards including silver conductors. The layers are fired at low temperatures. The circuit boards have a coefficient of thermal expansion close to that of silicon.
  • U.S. 2009/0321114 A1 discloses an electrical testing substrate unit including a multilayer ceramic substrate. Although the materials used have a coefficient of thermal expansion close to the value of the invention, they are not pure glasses.
  • U.S. Pat. No. 7,550,321 B1 discloses a substrate having a coefficient of thermal expansion with a gradient in the thickness direction.
  • An object of the invention is to provide an interposer for electrical connection between a CPU chip and a circuit board, which is economical to produce and enables to produce microholes with a hole diameter in the order of 20 ⁇ m and 200 ⁇ m, and wherein the interposer body exhibits a thermal expansion similar to that of the CPU chip material.
  • the novel interposer should be able to meet the following requirements:
  • each interposer Multiple small holes (10 to 10,000) are to be accommodated in each interposer, with close tolerances of the holes to each other. It has to be possible to ensure a hole spacing down to 30 ⁇ m. Hole diameters down to a size of 20 ⁇ m should be possible. A ratio of the thickness of the interposer to the hole diameter, the so-called aspect ratio, from 1 to 10 should be possible. A center-to-center distance of the holes in a range from 120 ⁇ m and 400 ⁇ m should be possible.
  • the hole should have a conical or crater-shaped inlet and outlet to the hole, but the inner walls of the hole in the center should be of cylindrical shape.
  • the hole should have smooth walls (fire-polished).
  • a bead may be produced around the edge of the hole, having a height of not more than 5 mm.
  • the interposer according to the invention is characterized in that its board-shaped base substrate is made of glass having a coefficient of thermal expansion ranging from 3.1 ⁇ 10 ⁇ 6 /K to 3.4 ⁇ 10 ⁇ 6 /K. Silicon-based chip boards exhibit an expansion coefficient between 3.2 ⁇ 10 ⁇ 6 /K and 3.3 ⁇ 10 ⁇ 6 /K. Therefore, large mechanical stresses between the interposer and the CPU chip due to different thermal expansion behavior are not to be expected.
  • the number of holes in the interposer is selected according to the particular requirements and may amount up to 10,000 holes per cm 2 .
  • a usual number of holes ranges from 1000 to 3000.
  • the center-to-center spacing of the holes ranges from 50 ⁇ m to 700 ⁇ m.
  • holes are provided which have a diameter ranging from 20 682 m to 200 ⁇ m.
  • conductive paths extend on one of the surfaces of the interposer board to and into the holes and therethrough to form connection points for the CPU chip.
  • the glass of the base substrate should have an alkali content of less than 700 ppm. Such a glass has a low coefficient of thermal expansion, as required, and exhibits very good signal-insulating properties, due to the high dielectric value. Furthermore, the risk of contamination of silicon processors with alkalis is largely avoided.
  • an arsenic or antimony content of the glass composition is less than 50 ppm.
  • Interposer boards have a thickness of less than 1 mm, but not below 30 ⁇ m.
  • the number of holes of an interposer is chosen according to the needs, and is in the order from 1000 to 3000 holes per cm 2 .
  • the invention targets to offer interposers on the market having microholes smaller than 100 p.m. Hence, the holes are closely packed, with a center-to-center distance of the holes that may range from 150 ⁇ m to 400 ⁇ m. However, the edge-to-edge distance of the holes should not be less than 30 ⁇ m.
  • the holes need not all have the same diameter, it is possible that holes of different diameters are provided in the board-shaped base substrate.
  • the ratio of the thickness of the glass board to the hole diameter may be selected in a wide range from 0.1 to 25, an aspect ratio from 1 to 10 being preferred.
  • the holes generally have a thin cylindrical shape, but may have rounded-broken edges at the inlet and outlet of the hole.
  • the holes which may have a diameter ranging from 20 ⁇ m to 200 ⁇ m
  • focused laser pulses are used in a wavelength range of transparency of the glass, so that the laser beams penetrate into the glass and are not already absorbed in the surface layers of the glass.
  • the laser radiation used has a very high radiation intensity, so as to result in local non-thermal destruction of the glass along filamentary channels.
  • These filamentary channels are subsequently widened to the desired diameter of the holes, for which purpose dielectric breakdowns may be employed which cause electro-thermal heating and evaporation of the material of the hole edges, and/or the filamentary channels are widened by supplying reactive gases.
  • the perforations may be widened by supplied etching gas.
  • FIG. 1 schematically illustrates, in a longitudinal sectional view, one way of producing an interposer
  • FIG. 2 illustrates a second way of producing an interposer.
  • perforation points 10 on a board-shaped glass substrate 1 are marked by focused laser pulses 41 emanating from an array 4 of lasers 40 .
  • the radiation intensity of these lasers is so strong that it causes local non-thermal destruction in the glass along a filamentary channel 11 .
  • filamentary channels 11 are widened into holes 12 .
  • opposing electrodes 6 and 7 may be employed, to which high voltage energy is applied, resulting in dielectric breakdowns across the glass substrate along filamentary channels 11 . These breakthroughs are widened by electro-thermal heating and evaporation of the perforation material until the process is stopped by switching off the power supply when the desired hole diameter is achieved.
  • the filamentary channels 11 may be widened using reactive gases, as illustrated by nozzles 20 , 30 , which direct the gas to the perforation points 10 .
  • conductive paths 13 to the perforation points 10 are applied on the upper surface of glass board 1 , and the holes 12 are filled with conductive material 14 to complete the connections to the contact points of a CPU chip or the like at the bottom surface of the board. (For mounting on the motherboard, glass board 1 is turned around.)
  • FIG. 2 shows another way of producing microholes.
  • Perforation points 10 are marked by precisely imprinted RF coupling material.
  • high frequency energy is applied by means of electrodes 2 , 3 , so that the coupling points themselves and the glass material between the upper surface coupling points and the lower surface coupling points is heated, causing the dielectric strength of the material to be lowered.
  • dielectric breakdowns will occur along narrow channels 11 .
  • these narrow channels 11 may be widened to the size of holes 12 .
  • conductive paths 13 to the holes 12 are applied on the upper surface of the glass substrate, and the holes are filled with conductive material 14 in order to establish the connections for the CPU chip, with the glass board 1 turned around.
  • interposers need not to be produced separately, rather glass substrate boards for a plurality of interposers may be processed, and the large-sized glass substrate boards may be cut to obtain the individual interposers. Glass substrate boards of a size with edge lengths of 0.2 m by 3 m (or less) can be processed. Round board formats may have dimensions of up to 1 m.
  • the table shows fifteen examples of suitable glasses and their compositions (in wt. % based on oxide) and their main features.
  • the refining agents SnO 2 (Examples 1-8, 11, 12, 14, 15) and As 2 O 3 (Examples 9, 10, 13) with a proportion of 0.3 wt. % is not listed.
  • the following properties are specified:
  • compositions in wt. % based on oxide, and essential properties of glasses according to the invention
  • n.m. 1650 1615 n d 1.520 1.513 1.511 1.512 1.520 1.526 HCl (mg/cm 2 ) n.m. 0.30 0.89 n.m. n.m. 0.72 BHF (mg/cm 2 ) 0.62 0.45 0.43 0.40 0.44 0.49 13 14 15 SiO 2 61.4 59.5 63.9 B 2 O 3 8.2 10.0 10.4 Al 2 O 3 16.0 16.7 14.6 MgO 2.8 0.7 2.9 CaO 7.9 8.5 4.8 BaO 3.4 3.8 3.1 ZnO — — — ⁇ 20/300 (10 ⁇ 6 /K) 3.75 3.60 3.21 ⁇ (g/cm 3 ) 2.48 2.48 2.41 Tg (2° C.) 709 702 701 T 4 (2° C.) 1273 1260 1311 T 2 (2° C.) 1629 1629 n.m. n d 1.523 1.522 n.m. HCl (mg/cm 2 ) 0.41 0.97
  • the glasses have the following advantageous properties:
  • the glasses exhibit high thermal shock resistance and good devitrification stability.
  • the glasses can be produced as flat glasses by various drawing methods, e.g. microsheet down-draw, up-draw, or overflow fusion methods, and, in a preferred embodiment, if they are free of As 2 O 3 and Sb 2 O 3 , also by the float process.
  • the glasses are highly suitable for use as substrate glass for producing interposers.
  • Interposers which are occupied more densely with holes as compared to previous interposers, take smaller substrate sizes, thereby still further reducing the amount of different expansions and contractions of the involved layers or boards and thus the risk of warpage and hence cracking between the involved layers or boards.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Glass Compositions (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Combinations Of Printed Boards (AREA)
  • Structure Of Printed Boards (AREA)
US13/807,386 2010-07-02 2011-07-04 Interposer and method for producing holes in an interposer Abandoned US20130210245A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010025966.7 2010-07-02
DE102010025966A DE102010025966B4 (de) 2010-07-02 2010-07-02 Interposer und Verfahren zum Herstellen von Löchern in einem Interposer
PCT/EP2011/003300 WO2012000685A2 (de) 2010-07-02 2011-07-04 Interposer und verfahren zur herstellung von löchern in einem interposer

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PCT/EP2011/003300 A-371-Of-International WO2012000685A2 (de) 2010-07-02 2011-07-04 Interposer und verfahren zur herstellung von löchern in einem interposer

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US16/256,093 Continuation-In-Part US20190157218A1 (en) 2010-07-02 2019-01-24 Interposer and method for producing holes in an interposer
US16/600,191 Division US11744015B2 (en) 2010-07-02 2019-10-11 Interposer and method for producing holes in an interposer

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US16/600,191 Active 2032-06-05 US11744015B2 (en) 2010-07-02 2019-10-11 Interposer and method for producing holes in an interposer

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