US20090140262A1 - Field-effect transistor - Google Patents

Field-effect transistor Download PDF

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Publication number
US20090140262A1
US20090140262A1 US12/365,446 US36544609A US2009140262A1 US 20090140262 A1 US20090140262 A1 US 20090140262A1 US 36544609 A US36544609 A US 36544609A US 2009140262 A1 US2009140262 A1 US 2009140262A1
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US
United States
Prior art keywords
gate electrode
electrode
insulating film
effect transistor
multilayer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/365,446
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English (en)
Inventor
Toshihiro Ohki
Naoya Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Assigned to FUJITSU LIMITED reassignment FUJITSU LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OHKI, TOSHIHIRO, OKAMOTO, NAOYA
Publication of US20090140262A1 publication Critical patent/US20090140262A1/en
Priority to US13/312,623 priority Critical patent/US8969919B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
US12/365,446 2006-09-20 2009-02-04 Field-effect transistor Abandoned US20090140262A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/312,623 US8969919B2 (en) 2006-09-20 2011-12-06 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2006/318572 WO2008035403A1 (en) 2006-09-20 2006-09-20 Field-effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/318572 Continuation WO2008035403A1 (en) 2006-09-20 2006-09-20 Field-effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/312,623 Division US8969919B2 (en) 2006-09-20 2011-12-06 Field-effect transistor

Publications (1)

Publication Number Publication Date
US20090140262A1 true US20090140262A1 (en) 2009-06-04

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
US12/365,446 Abandoned US20090140262A1 (en) 2006-09-20 2009-02-04 Field-effect transistor
US13/312,623 Active 2027-07-31 US8969919B2 (en) 2006-09-20 2011-12-06 Field-effect transistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/312,623 Active 2027-07-31 US8969919B2 (en) 2006-09-20 2011-12-06 Field-effect transistor

Country Status (5)

Country Link
US (2) US20090140262A1 (de)
EP (1) EP2065925B1 (de)
JP (1) JP5200936B2 (de)
CN (1) CN101506958B (de)
WO (1) WO2008035403A1 (de)

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US20100289067A1 (en) * 2009-05-14 2010-11-18 Transphorm Inc. High Voltage III-Nitride Semiconductor Devices
US20120028475A1 (en) * 2010-07-30 2012-02-02 Sumitomo Electric Device Innovations, Inc. Method for fabricating semiconductor device
US20120049955A1 (en) * 2010-08-31 2012-03-01 Fujitsu Limited Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier
US20120126249A1 (en) * 2008-12-25 2012-05-24 Rohm Co., Ltd. Semiconductor device
CN102651386A (zh) * 2011-02-24 2012-08-29 富士通株式会社 化合物半导体器件
US20120223319A1 (en) * 2011-03-04 2012-09-06 Transphorm Inc. Semiconductor diodes with low reverse bias currents
US20120302178A1 (en) * 2011-05-25 2012-11-29 Triquint Semiconductor, Inc. Regrown shottky structures for gan hemt devices
US20130082307A1 (en) * 2011-09-29 2013-04-04 Fujitsu Limited Compound semiconductor device and manufacturing method therefor
US20130256755A1 (en) * 2012-03-28 2013-10-03 Sumitomo Electric Device Innovations, Inc. Semiconductor device and method for manufacturing the same
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US20140264451A1 (en) * 2013-03-18 2014-09-18 Fujitsu Limited Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9093366B2 (en) 2012-04-09 2015-07-28 Transphorm Inc. N-polar III-nitride transistors
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US9171836B2 (en) 2011-10-07 2015-10-27 Transphorm Inc. Method of forming electronic components with increased reliability
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9219127B2 (en) 2009-12-24 2015-12-22 Rohm Co., Ltd. SiC field effect transistor
US9224671B2 (en) 2011-02-02 2015-12-29 Transphorm Inc. III-N device structures and methods
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9379229B2 (en) 2011-02-24 2016-06-28 Fujitsu Limited Semiconductor apparatus including protective film on gate electrode and method for manufacturing the semiconductor apparatus
US9406757B2 (en) 2008-12-25 2016-08-02 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9590060B2 (en) 2013-03-13 2017-03-07 Transphorm Inc. Enhancement-mode III-nitride devices
US9608083B2 (en) 2010-10-19 2017-03-28 Fujitsu Limited Semiconductor device
US9773860B1 (en) * 2016-08-08 2017-09-26 United Microelectronics Corp. Capacitor and method for fabricating the same
US20180076312A1 (en) * 2014-12-10 2018-03-15 Renesas Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
CN109037323A (zh) * 2017-06-09 2018-12-18 意法半导体股份有限公司 具有选择性生成的2deg沟道的常关型hemt晶体管及其制造方法
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
US20190074370A1 (en) * 2017-09-06 2019-03-07 Sumitomo Electric Industries, Ltd. Semiconductor device primarily made of nitride semiconductor materials and process of forming the same
US10388585B2 (en) * 2016-10-28 2019-08-20 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same
US10741666B2 (en) * 2018-11-19 2020-08-11 Vanguard International Semiconductor Corporation High electron mobility transistor and method for forming the same
US11322599B2 (en) 2016-01-15 2022-05-03 Transphorm Technology, Inc. Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
US20220367270A1 (en) * 2019-03-01 2022-11-17 Micromaterials Llc Self-aligned contact and contact over active gate structures
US11784053B2 (en) 2018-06-13 2023-10-10 Sumitomo Electric Device Innovations, Inc. Semiconductor device manufacturing method

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WO2012144100A1 (ja) * 2011-04-22 2012-10-26 次世代パワーデバイス技術研究組合 窒化物系半導体装置
JP2011238805A (ja) * 2010-05-11 2011-11-24 Nec Corp 電界効果トランジスタ、電界効果トランジスタの製造方法および電子装置
US8896122B2 (en) 2010-05-12 2014-11-25 Cree, Inc. Semiconductor devices having gates including oxidized nickel
JPWO2012026396A1 (ja) * 2010-08-25 2013-10-28 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、半導体素子用エピタキシャル基板の作製方法、および半導体素子の作製方法
JP5942371B2 (ja) * 2011-09-21 2016-06-29 富士通株式会社 化合物半導体装置及びその製造方法
JP5306438B2 (ja) * 2011-11-14 2013-10-02 シャープ株式会社 電界効果トランジスタおよびその製造方法
JP6054621B2 (ja) * 2012-03-30 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
CN103618003B (zh) * 2013-11-18 2017-04-12 石以瑄 具有改良栅极的高电子迁移率晶体管
US9673286B2 (en) * 2013-12-02 2017-06-06 Infineon Technologies Americas Corp. Group III-V transistor with semiconductor field plate
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CN106298905B (zh) * 2016-04-15 2020-06-12 苏州能讯高能半导体有限公司 一种半导体器件及其制造方法
JP6859646B2 (ja) * 2016-09-29 2021-04-14 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、電源装置、及び増幅器
CN110809819B (zh) * 2017-07-04 2023-09-12 三菱电机株式会社 半导体装置及半导体装置的制造方法
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US9406757B2 (en) 2008-12-25 2016-08-02 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
USRE48072E1 (en) * 2008-12-25 2020-06-30 Rohm Co., Ltd. Semiconductor device
US9293575B2 (en) * 2008-12-25 2016-03-22 Rohm Co., Ltd. Semiconductor device
US20120126249A1 (en) * 2008-12-25 2012-05-24 Rohm Co., Ltd. Semiconductor device
US11804545B2 (en) 2008-12-25 2023-10-31 Rohm Co., Ltd. Semiconductor device
US11152501B2 (en) 2008-12-25 2021-10-19 Rohm Co., Ltd. Semiconductor device
USRE48289E1 (en) * 2008-12-25 2020-10-27 Rohm Co., Ltd. Semiconductor device
US10693001B2 (en) 2008-12-25 2020-06-23 Rohm Co., Ltd. Semiconductor device
US9837531B2 (en) 2008-12-25 2017-12-05 Rohm Co., Ltd. Semiconductor device
US20100289067A1 (en) * 2009-05-14 2010-11-18 Transphorm Inc. High Voltage III-Nitride Semiconductor Devices
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EP2065925A1 (de) 2009-06-03
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US20120074426A1 (en) 2012-03-29
CN101506958B (zh) 2012-02-22

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