US10144849B2 - Polishing composition and polishing method using the same - Google Patents

Polishing composition and polishing method using the same Download PDF

Info

Publication number
US10144849B2
US10144849B2 US12/864,811 US86481109A US10144849B2 US 10144849 B2 US10144849 B2 US 10144849B2 US 86481109 A US86481109 A US 86481109A US 10144849 B2 US10144849 B2 US 10144849B2
Authority
US
United States
Prior art keywords
polishing composition
polishing
nitrogen
containing compound
abrasive grains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US12/864,811
Other languages
English (en)
Other versions
US20100301014A1 (en
Inventor
Takahiro Mizuno
Yoshihiro Izawa
Tomohiko Akatsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Assigned to FUJIMI INCORPORATED reassignment FUJIMI INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AKATSUKA, TOMOHIKO, MIZUNO, TAKAHIRO, IZAWA, YOSHIHIRO
Assigned to FUJIMI INCORPORATED reassignment FUJIMI INCORPORATED CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE OF THE THIRD ASSIGNEE, TOMOHIKO AKATSUKA. PREVIOUSLY RECORDED ON REEL 024796 FRAME 0971. ASSIGNOR(S) HEREBY CONFIRMS THE EXECUTION DATE IS CORRECTED TO READ, 06/29/2010. Assignors: MIZUNO, TAKAHIRO, AKATSUKA, TOMOHIKO, IZAWA, YOSHIHIRO
Publication of US20100301014A1 publication Critical patent/US20100301014A1/en
Application granted granted Critical
Publication of US10144849B2 publication Critical patent/US10144849B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a polishing composition and a polishing method using the same.
  • the polishing composition is used primarily for polishing silicon material, which includes a simple substance of silicon such as silicon single crystal, amorphous silicon, and polysilicon and a silicon compound such as silicon nitride and silicon oxide.
  • polishing may be conducted to remove at least part of a simple substance of silicon such as silicon single crystal, amorphous silicon, and polysilicon.
  • Such polishing is normally conducted by using an alkaline polishing composition (refer to, for example, Patent Documents 1 and 2).
  • an alkaline polishing composition (refer to, for example, Patent Documents 1 and 2).
  • most of known polishing compositions do not allow a simple substance of silicon to be polished at a high removal rate that sufficiently satisfies the requirement of users.
  • neutral or acid polishing composition do not allow a simple substance of silicon to be polished at a high removal rate satisfying the requirement of users.
  • Patent Documents 3 to 6 Prior art documents relevant to the present invention include the following Patent Documents 3 to 6 in addition to the above described Patent Documents 1 and 2.
  • the polishing composition being suitably used for polishing silicon material such polishing composition and a polishing method using the as a simple substance of silicon and a silicon compound.
  • a polishing composition containing a nitrogen-containing compound and abrasive grains is provided.
  • the pH of the composition is in the range of 1 to 7.
  • the nitrogen-containing compound contained in the polishing composition of the first aspect preferably has a structure expressed by a formula (1): R 1 —N(—R 2 )—R 3 in which R 1 , R 2 , and R 3 each represent an alkyl group with or without a characteristic group, two of R 1 to R 3 may form a part of a heterocycle, and two of R 1 to R 3 may be identical and form a part of a heterocycle with the remaining one.
  • the compound having a structure expressed by the above formula (1) preferably has a structure expressed by a formula (2): R 1 —N(—R 2 )—C( ⁇ O)—R 4 in which R 1 , R 2 , and R 4 each represent an alkyl group with or without a characteristic group, and R 1 or R 2 may form a part of a heterocycle together with R 4 .
  • the compound having a structure expressed by the above formula (1) is preferably an amino acid type ampholytic surfactant or an amine type nonionic surfactant.
  • the nitrogen-containing compound contained in the polishing composition of the first aspect is preferably selected from a group consisting of a carboxybetaine type ampholytic surfactant, a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant.
  • a polishing composition that contains a water-soluble polymer and abrasive grains, and the pH of the composition is in the range of 1 to 8.
  • the water-soluble polymer contained in the polishing composition of the second aspect is preferably selected from a group consisting of a polysaccharide, a polycarboxylic acid, a polycarboxylic amide, a polycarboxylic ester, a polycarboxylate, a polysulfonic acid, and a vinyl polymer.
  • a polishing method in which a silicon material is polished using the polishing composition according to the above first or second aspect.
  • a polishing composition of the present embodiment is manufactured by mixing a nitrogen-containing compound and abrasive grains in water, together with a pH adjuster and a pH buffer if necessary, such that the pH falls within the range of 1 to 7. Therefore, the polishing composition contains a nitrogen-containing compound, abrasive grains, and water, and if necessary, a pH adjuster and a pH buffer.
  • the polishing composition is used for polishing silicon material, that is, a simple substance of silicon such as silicon single crystal, amorphous silicon, and polysilicon and a silicon compound such as silicon nitride and silicon oxide. More particularly, the polishing composition is used for polishing a silicon substrate such as a single crystal silicon substrate, or for polishing a film of a simple substance of silicon such as an amorphous silicon film or a polysilicon film formed on a silicon substrate, or a film of silicon compound such as a silicon nitride film or a silicon oxide film formed on a silicon substrate.
  • the film of silicon compound includes a low-dielectric-constant film of which the relative dielectric constant is 3 or lower.
  • nitrogen-containing compounds include amines, amides, imines, imides, ureas, ammoniums, quaternary ammoniums, amino acids, aminosulfonic acids, and aminophosphonic acids.
  • Amines and amides are divided into primary types, secondary types, and tertiary types depending on the number of substituents on the nitrogen atom.
  • the primary amines include methylamine, ethylamine, butylamine, ethylenediamine, glycine, alanine, and valine.
  • the secondary amines include piperazine, piperidine, morpholine, N-methylglycine.
  • the tertiary amines include methylpiperidine, ethylpiperidine, methylpyrrolidine, N,N-dimethylacetamide, and N,N-diethylacetamide.
  • a nitrogen-containing compound that can be suitably contained in the polishing composition is a compound having a structure expressed by a formula (1): R 1 —N(—R 2 )—R 3 .
  • R 1 , R 2 , and R 3 each represent an alkyl group with or without a characteristic group. Two of R 1 to R 3 may form a part of a heterocycle. Alternatively, two of R 1 to R 3 may be identical and form a part of a heterocycle with the remaining one.
  • Examples of the characteristic group include halogen, hydroxy, amino, imino, N-oxide, N-hydroxy, hydrazine, nitro, nitroso, azo, diazo, azido, oxy, epoxy, oxo, carbonyl, phenyl, phosphino, thio, S-oxide, and thioxy.
  • specific examples of compounds in which two of R 1 to R 3 form a part of a heterocycle include piperidine groups and their analogous compounds such as methylpiperidine and ethylpiperidine, pyrrolidone groups and their analogous compounds such as methylpyrrolidine, pyrrole groups and their analogous compounds such as methylpyrrole, morpholine groups and their analogous compounds such as methylmorpholine, piperazine groups and their analogous compounds such as methylpiperazine and dimethylpiperazine, and hexamethylene tetramine and its analogous compounds.
  • piperidine groups and their analogous compounds such as methylpiperidine and ethylpiperidine
  • pyrrolidone groups and their analogous compounds such as methylpyrrolidine
  • pyrrole groups and their analogous compounds such as methylpyrrole
  • morpholine groups and their analogous compounds such as methylmorpholine
  • piperazine groups and their analogous compounds such as methylpiperazine and dimethylpiperaz
  • R 1 —N(—R 2 )—C( ⁇ O)—R 4 can be suitably used as the nitrogen-containing compound contained in the polishing composition.
  • R 1 or R 2 may form a part of a heterocycle together with R 4 . Examples of the characteristic group are as shown above.
  • compounds having a structure expressed by the formula (2) include N,N-dimethylacetamide, 1-methyl-2-pyrrolidone, N,N-dimethylacrylamide, 1-vinyl-2-pyrrolidone, N,N-dimethylacetoacetamide, N,N-diethylacrylamide, sodium N-lauroylsarcosinate hydrate, 1-(2-hydroxyethyl)-2-pyrrolidone, N-oleoyl sarcosine, 1-cyclohexyl-2-pyrrolidone, N-phenylmaleimide, N-vinyl- ⁇ -caprolactam, N-lauroyl sarcosine, 1-n-octyl-2-pyrrolidone, N-acetoacetylmorpholine, N-(2-ethylhexyl)-5-norbornene-2,3-dicarboximide, 1,3,5-triacryloylhexahydro-1,3,5-tri
  • compounds having a structure expressed by the formula (2) are particularly suitable as the nitrogen-containing compound contained in the polishing composition is that these compounds are substantially neutral.
  • the nitrogen-containing compound used is substantially neutral, the pH of the polishing composition is easily adjusted to 7 or lower without adding a large amount of acid.
  • the nitrogen-containing compound used is strongly-alkaline, a large amount of acid needs to be added to adjust the pH of the polishing composition to 7 or lower in some cases. Use of large amount of acid leads to aggregation of abrasive grains contained in the polishing composition.
  • an amino acid type ampholytic surfactant and an amine type nonionic surfactant can also be suitably used as the nitrogen-containing compound contained in the polishing composition.
  • Specific examples of amino acid type ampholytic surfactants include alkylamino monopropionic acid, alkylamino dipropionic acid, alkylamidosarcosine.
  • amine type nonionic surfactants include polyoxyethylene alkylamino ether, alkyl diethanolamine, polyoxyethylene alkylamine, alkylamine to which polyoxypropylene and polyoxyethylene are added in blocks, and N,N′,N′-tris(2-hydroxyethyl)-N-alkyl-1,3-diaminopropane.
  • the polishing composition contains an amino acid type ampholytic surfactant, the content of the surfactant in the polishing composition is preferably in the range of 0.002 to 0.20 g/L.
  • the polishing composition contains an amine type nonionic surfactant, the content of the surfactant in the polishing composition is preferably in the range of 0.002 to 1 g/L.
  • a carboxybetaine type ampholytic surfactant a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant can be suitably used as the nitrogen-containing compound contained in the polishing composition.
  • carboxybetaine type ampholytic surfactants include alkyldimethylamino betaine acetate (also known as alkylbetaine) and alkylamidopropyl dimethylamino betaine acetate (also known as alkylamidopropylbetaine).
  • Specific examples of sulfobetaine type ampholytic surfactants include alkylhydroxysulfobetaine.
  • imidazoline type ampholytic surfactants include 2-alkyl-N-carboxymethyl-N-hydroxyethyl imidazolium betaine and 2-higher fatty acid-N′-carboxymethyl-N′-hydroxyethylethylenediamine.
  • amine oxide type ampholytic surfactants include alkyldimethylamine oxide and higher fatty acid amidopropyl dimethylamine oxide.
  • the type of the abrasive grains contained in the polishing composition is not particularly limited, but may be, for example, silicon dioxide, aluminum oxide, zirconium oxide, or cerium oxide.
  • silicon dioxide when used for polishing silicon material, it is preferable to use silicon dioxide, and particularly colloidal silica or fumed silica.
  • silicon dioxide, particularly colloidal silica or fumed silica is used as abrasive grains, the removal rate of polishing silicon material using the polishing composition is significantly improved.
  • the average secondary particle size of the abrasive grains contained in the polishing composition is preferably 5 nm or more, more preferably 10 nm or more.
  • the greater the average secondary particle size the more improved the removal rate of polishing silicon material using the polishing composition becomes.
  • the average secondary particle size of the abrasive grains is 5 nm or more, more specifically 10 nm or more, the removal rate of polishing silicon material using the polishing composition is improved to a level particularly suitable for practical use.
  • the average secondary particle size of the abrasive grains contained in the polishing composition is preferably 250 nm or less, more preferably 200 nm or less.
  • the average secondary particle size of the abrasive grains is 250 nm or less, more specifically 200 nm or less, the dispersibility of the abrasive grains in the polishing composition is improved to a level particularly suitable for practical use.
  • the content of the abrasive grains in the polishing composition is preferably 1% by mass or more, more preferably 3% by mass or more.
  • the content of the abrasive grains in the polishing composition is 1% by mass or more, more specifically 3% by mass or more, the removal rate of polishing silicon material using the polishing composition is improved to a level particularly suitable for practical use.
  • the content of the abrasive grains in the polishing composition is preferably 25% by mass or less, more preferably 20% by mass or less.
  • the content of the abrasive grains in the polishing composition is 25% by mass or less, more specifically 20% by mass or less, the dispersibility of the abrasive grains in the polishing composition is improved to a level particularly suitable for practical use.
  • the type of the pH adjuster, which is added to the polishing composition as needed, is not specifically restricted, and an appropriate amount of any acid or alkali may be used to adjust the pH of the polishing composition to a desired value in the pH range of 1 to 7.
  • the type of the pH buffer, which is added to the polishing composition as needed, is not specifically restricted, and an appropriate amount of any salt may be used to obtain a desired buffering effect.
  • nitric acid and nitrate salt not only nitric acid and nitrate salt, but also another oxidizing agent such as peroxide, which includes hydrogen peroxide, iodate, periodate, hypochlorite, chlorite, chlorate, perchlorate, persulfate, bichromate, permanganate, ozone water, divalent silver salt, trivalent iron salt may form an oxide film on the surface of silicon material being polished when added to the polishing composition. This can reduce the removal rate of polishing the silicon material using the polishing composition.
  • peroxide which includes hydrogen peroxide, iodate, periodate, hypochlorite, chlorite, chlorate, perchlorate, persulfate, bichromate, permanganate, ozone water, divalent silver salt, trivalent iron salt may form an oxide film on the surface of silicon material being polished when added to the polishing composition. This can reduce the removal rate of polishing the silicon material using the polishing composition.
  • Alkaline agents that can be suitably used as the pH adjuster include ammonium hydroxide, tetramethylammonium hydroxide, sodium hydroxide, and potassium hydroxide.
  • the present embodiment provides the following advantages.
  • polishing composition according to the present embodiment allows silicon material such as a simple substance of silicon and a silicon compound to be polished at a high removal rate. Therefore, the polishing composition of the present embodiment is suitably used not only for polishing silicon material, specifically, polishing a simple substance of silicon or a silicon compound separately, but also for polishing a simple substance of silicon and a silicon compound simultaneously.
  • the polishing composition of the present embodiment is not understood in detail, but it is inferred that the advantages are brought about by the fact that, since an unshared electron pair existing in a nitrogen atom of the nitrogen-containing compound in the polishing composition have a high electron-donating ability, the polishing composition exerts high reactivity with silicon material even in a region from neutral to acidic pH.
  • the electron-donating ability of the unshared electron pair is particularly increased when the nitrogen-containing compound has a structure expressed by the above formula (1).
  • a polishing composition of the second embodiment is manufactured by mixing a water-soluble polymer and abrasive grains in water, together with a pH adjuster and a pH buffer if necessary, such that the pH falls within the range of 1 to 8. Therefore, the polishing composition contains a water-soluble polymer, abrasive grains, and water, and if necessary, a pH adjuster and a pH buffer. That is, the polishing composition of the second embodiment is different from the polishing composition of the first embodiment in that a water-soluble polymer is added instead of the nitrogen-containing compound, and that the pH is within the range of 1 to 8, but not in the range of 1 to 7.
  • water-soluble polymer examples include: a polysaccharide such as alginic acid, pectic acid, carboxymethyl cellulose, starch, agar, curdlan, and pullulan; a polycarboxylic acid, polycarboxylic amide, polycarboxylic ester, and polycarboxylate, which include poly(aspartic acid), poly(glutamic acid), polylysine, poly(malic acid), poly(methacrylic acid), ammonium polymethacrylate, sodium polymethacrylate, poly(maleic acid), poly(itaconic acid), poly(fumaric acid), poly(p-styrenecarboxylic acid), poly(acrylic acid), polyacrylamide, aminopolyacrylamide, poly(methyl acrylate), poly(ethyl acrylate), ammonium polyacrylate, sodium polyacrylate, poly(amide acid), ammonium polyamidate, sodium polyamidate, and poly(glyoxylic acid); a polysulfonic acid such as polys
  • the content of the water-soluble polymer in the polishing composition is preferably in the range of 0.1 to 5.0 g/L.
  • the second embodiment has the following advantages.
  • polishing composition according to the second embodiment allows a simple substance of silicon to be polished at a high removal rate. Therefore, the polishing composition of the second embodiment is suitably used for polishing a simple substance of silicon.
  • the reason why the polishing composition of the second embodiment allows a simple substance of silicon to be polished at a high removal rate is not understood in detail, but it is inferred that the advantage is brought about by the fact that the water-soluble polymer in the polishing composition modifies the surface of the simple substance of silicon.
  • the removal rate of polishing a simple substance of silicon using the polishing composition of the second embodiment can be lowered by the existence of an oxidizing agent.
  • the polishing composition of the second embodiment contains no oxidizing agent, the removal rate of polishing silicon material is not reduced by an oxidizing agent.
  • the first and second embodiments may be modified as follows.
  • the polishing composition of the first embodiment may contain two or more types of nitrogen-containing compounds.
  • the polishing composition of the second embodiment may contain two or more types of water-soluble polymers.
  • the polishing compositions of the first and second embodiments may contain two or more types of abrasive grains.
  • the polishing composition of the first embodiment may contain any component other than the nitrogen-containing compound, abrasive grains, and water.
  • additives such as a chelating agent, a water-soluble polymer, surfactant, antiseptic, fungicide, and rust preventive may be added as needed.
  • the polishing composition of the second embodiment may contain any component other than the water-soluble polymer, abrasive grains, and water.
  • additives such as a chelating agent, surfactant, antiseptic, fungicide, and rust preventive may be added as needed.
  • the polishing compositions of the first and second embodiments may be prepared by diluting liquid concentrate of the polishing composition with water.
  • polishing compositions were each prepared by mixing a nitrogen-containing compound and abrasive grains, together with a pH adjuster as needed, with water.
  • polishing compositions were each prepared by mixing abrasive grains, together with a pH adjuster as needed, with water.
  • Table 1 shows the specifics of the nitrogen-containing compound in each polishing composition, and the results of measurement of the pH of each polishing composition.
  • the abrasive grains used in all the examples were colloidal silica having an average secondary particle size of 30 nm, and the content of the colloidal silica in each polishing composition was 5% by mass.
  • the pH adjuster used in some of the examples was acetic acid or potassium hydroxide.
  • each polishing composition the surface of a substrate that had a diameter of 200 mm and a polysilicon film was polished under the conditions shown in Table 2.
  • the thickness of each substrate before polishing and that after polishing were measured by using LAMBDA ACE VM-2030, an optical interferometric film thickness measurement system manufactured by Dainippon Screen MFG. Co., Ltd.
  • the polysilicon removal rate was determined by dividing the difference between the thickness of each substrate before polishing and that after polishing by polishing time. If the polysilicon removal rate using the polishing composition of Example 4 is defined as 100, the polysilicon removal rates of the polishing compositions of the other examples are as shown in the column “polysilicon removal rate” as relative values.
  • the surface of a substrate that had a diameter of 200 mm and a silicon nitride film was polished under the conditions shown in Table 2.
  • the thickness of each substrate before polishing and that after polishing were measured by using LAMBDA ACE VM-2030, an optical interferometric film thickness measurement system.
  • the silicon nitride removal rate was determined by dividing the difference between the thickness of each substrate before polishing and that after polishing by polishing time. If the silicon nitride removal rate using the polishing composition of Example 4 is defined as 100, the silicon nitride removal rates of the polishing compositions of the other examples are as shown in the column “silicon nitride removal rate” as relative values.
  • the polishing composition of the present invention is suitably used not only for polishing a simple substance of silicon such as polysilicon, but also for polishing a simple substance of silicon and a silicon compound such as silicon nitride simultaneously.
  • Examples 101 to 123 a pH adjuster and water, and further an ampholytic surfactant, were added to abrasive grains to prepare polishing compositions.
  • Examples 201 to 205 a pH adjuster and water, and further a nitrogen-containing surfactant, were added to abrasive grains to prepare polishing compositions.
  • Examples 301 to 337 a pH adjuster and water, and further a water-soluble polymer, were added to abrasive grains to prepare polishing compositions.
  • Comparative Examples 101 to 109 a pH adjuster and water were added to abrasive grains to prepare polishing compositions.
  • Tables 3 to 6 show the specifics of the ampholytic surfactant, the nitrogen-containing surfactant, and the water soluble polymer in each polishing composition, and the results of measurement of the pH of each polishing composition.
  • the pH adjuster used in all the examples was acetic acid.
  • A1a represents colloidal silica having an average secondary particle size of 70 nm
  • A1b represents colloidal silica having an average secondary particle size of 30 nm
  • A2 represents fumed silica having an average secondary particle size of 150 nm
  • B1 represents 2-oleyl-N-carboxymethyl-N-hydroxyethyl imidazolium betaine
  • B2 represents alkyl(C 12 to C 14 )dimethylamino betaine acetate
  • B3 represents alkyl(C 12 to C 14 )amidopropyl dimethylamino betaine acetate
  • B4 represents alkyl(C 12 to C 14 )dimethylamine oxide
  • B5 represents laurylhydroxysulfobetaine
  • B6 represents alkyl(C 12 to C 14 )amidosarcosine
  • B7 represents laurylaminopropionic acid
  • C1 represents POE(2)laurylamino ether
  • C2 represents POE(10)laurylamino ether
  • C3 represents POE(5)oleylamino ether
  • D1a represents poly(acrylic acid) having a mean molecular weight of 3,000;
  • D1b represents poly(acrylic acid) having a mean molecular weight of 5,500
  • D2 represents polyacrylic amide having a mean molecular weight of 200,000
  • D3 represents carboxymethyl cellulose having a mean molecular weight of 80,000
  • D4 represents starch (biochemical agent) manufactured by Wako Pure Chemical Industries, Ltd.
  • D5 represents pullulan (reagent) manufactured by Hayashibara Biochemical Laboratories, Inc.
  • D6a represents polyvinyl alcohol having a mean molecular weight of 8,800
  • D6b represents polyvinyl alcohol having a mean molecular weight of 22,026;
  • D6c represents polyvinyl alcohol having a mean molecular weight of 66,078;
  • D6d represents polyvinyl alcohol having a mean molecular weight of 1057,25;
  • D6e represents polyvinyl alcohol having a mean molecular weight of 146,000
  • D7a represents polyvinylpyrrolidone having a mean molecular weight of 15,000
  • D7b represents polyvinylpyrrolidone having a mean molecular weight of 29,000
  • D7c represents polyvinylpyrrolidone having a mean molecular weight of 30,000
  • D7d represents polyvinylpyrrolidone having a mean molecular weight of 40,000
  • D7e represents polyvinylpyrrolidone having a mean molecular weight of 360,000
  • D8 represents polyvinylpyridine having a mean molecular weight of 60,000.
  • D9 represents polystyrene sulfonic acid having a mean molecular weight of 18,320.
  • the column titled “polysilicon removal rate” of Tables 3 to 6 shows removal rate when, using the polishing composition of each example, the surface of a substrate that had a diameter of 200 mm and a polysilicon film was polished under the conditions shown in Table 7.
  • the thickness of each substrate before polishing and that after polishing were measured by using LAMBDA ACE VM-2030, an optical interferometric film thickness measurement system manufactured by Dainippon Screen MFG. Co., Ltd.
  • the removal rate was determined by dividing the difference between the thickness of each substrate before polishing and that after polishing by polishing time.
  • Example 301 A1a 10 D1a 1.0 2.0 548
  • Example 302 A1a 10 D1b 1.0 2.0 120
  • Example 303 A1a 10 D2 1.0 2.0 248
  • Example 304 A1a 10 D3 2.0 2.0 817
  • Example 305 A1a 10 D3 2.5 4.5 492
  • Example 306 A1a 10 D3 5.0 4.5 648
  • Example 307 A1b 5 D3 0.5 2.0 330
  • Example 309 A1b 5 D3 0.5 4.5
  • Example 310 A1b 5 D3 0.5 8.0 160
  • Example 311 A1b 5 D4 0.5 4.5 434
  • Example 312 A1a 10 D5 1.0 2.0 1007
  • Example 313 A1a 5 D6a 0.5 2.0 798
  • Example 314 A1a 5 D6a 0.5 3.0 760
  • Example 315 A1a 5 D6a
  • the polysilicon removal rate using a polishing composition tended to increase when an ampholytic surfactant, a nitrogen-containing surfactant, or water-soluble polymer was added. This tendency was observed not only during the polishing of polysilicon, but also during the polishing of a silicon single crystal and amorphous silicon.
US12/864,811 2008-02-01 2009-01-29 Polishing composition and polishing method using the same Active US10144849B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008023229 2008-02-01
JP2008-023229 2008-02-01
JP2008151969 2008-06-10
JP2008-151969 2008-06-10
PCT/JP2009/051510 WO2009096495A1 (ja) 2008-02-01 2009-01-29 研磨用組成物及びそれを用いた研磨方法

Publications (2)

Publication Number Publication Date
US20100301014A1 US20100301014A1 (en) 2010-12-02
US10144849B2 true US10144849B2 (en) 2018-12-04

Family

ID=40912840

Family Applications (1)

Application Number Title Priority Date Filing Date
US12/864,811 Active US10144849B2 (en) 2008-02-01 2009-01-29 Polishing composition and polishing method using the same

Country Status (8)

Country Link
US (1) US10144849B2 (ja)
EP (1) EP2237311A4 (ja)
JP (2) JPWO2009096495A1 (ja)
KR (2) KR101564673B1 (ja)
CN (2) CN102084465A (ja)
SG (2) SG10201605686XA (ja)
TW (1) TWI554600B (ja)
WO (1) WO2009096495A1 (ja)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492277B2 (en) 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
JP5795843B2 (ja) 2010-07-26 2015-10-14 東洋鋼鈑株式会社 ハードディスク基板の製造方法
CN102533122B (zh) * 2010-12-28 2016-01-20 安集微电子（上海）有限公司 一种用于抛光含钛基材的抛光浆料
JP6411708B2 (ja) * 2011-06-14 2018-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
EP2722872A4 (en) * 2011-06-14 2015-04-29 Fujimi Inc POLISHING COMPOSITION
JP6407503B2 (ja) * 2011-06-14 2018-10-17 株式会社フジミインコーポレーテッド 研磨用組成物
SG11201401309PA (en) 2011-10-24 2014-06-27 Fujimi Inc Composition for polishing purposes, polishing method using same, and method for producing substrate
WO2014034425A1 (ja) * 2012-08-31 2014-03-06 株式会社 フジミインコーポレーテッド 研磨用組成物及び基板の製造方法
KR102226441B1 (ko) * 2013-02-13 2021-03-12 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마용 조성물 제조 방법 및 연마물 제조 방법
JP6037416B2 (ja) * 2013-06-07 2016-12-07 株式会社フジミインコーポレーテッド シリコンウエハ研磨用組成物
WO2015068672A1 (ja) * 2013-11-08 2015-05-14 東亞合成株式会社 半導体用濡れ剤及び研磨用組成物
MY182263A (en) * 2014-01-31 2021-01-18 Hoya Corp Method for manufacturing magnetic-disk substrate and method for manufacturing magnetic disk
JP6376599B2 (ja) * 2014-12-26 2018-08-22 花王株式会社 シリカ分散液
WO2016132951A1 (ja) * 2015-02-19 2016-08-25 株式会社フジミインコーポレーテッド 研磨用組成物
TWI654293B (zh) 2015-03-17 2019-03-21 德商福斯石油股份公司 添加劑組合物和工業處理流體
JP6393228B2 (ja) * 2015-03-31 2018-09-19 株式会社フジミインコーポレーテッド 研磨用組成物および研磨物の製造方法
WO2017011115A1 (en) * 2015-07-10 2017-01-19 Ferro Corporation Slurry composition and additives and method for polishing organic polymer-based ophthalmic substrates
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
JP6728939B2 (ja) * 2016-04-27 2020-07-22 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
US10907073B2 (en) * 2017-01-11 2021-02-02 Fujimi Incorporated Polishing composition
WO2018150856A1 (ja) * 2017-02-17 2018-08-23 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法および研磨用組成物を用いた研磨方法
WO2018168206A1 (ja) 2017-03-14 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法
KR102634780B1 (ko) * 2017-04-17 2024-02-07 닛산 가가쿠 가부시키가이샤 양성 계면활성제를 포함하는 연마용 조성물
CN109971356A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种化学机械抛光液
CN109971358A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种化学机械抛光液
JP7128005B2 (ja) * 2018-03-26 2022-08-30 株式会社フジミインコーポレーテッド 研磨用組成物
JP7237933B2 (ja) * 2018-03-28 2023-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
CN111378377A (zh) * 2018-12-29 2020-07-07 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN111378380B (zh) * 2018-12-29 2022-05-13 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
JPWO2021230026A1 (ja) * 2020-05-11 2021-11-18
CN114591686B (zh) * 2022-03-11 2023-05-26 万华化学集团电子材料有限公司 一种铜阻挡层化学机械抛光液及其应用
CN115160211B (zh) * 2022-06-23 2023-11-03 温州大学 一种异吲哚啉酮类化合物的绿色合成方法

Citations (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4269959A (en) * 1979-10-22 1981-05-26 Whittaker Corporation Method of preparing improved imbibitive polymer
JPH01135026A (ja) 1987-10-16 1989-05-26 Wacker Chemitronic Ges Elekton Grundstoffe Mbh 半導体スライスのくもりのない研摩方法
US4913841A (en) * 1985-05-09 1990-04-03 Sherex Chemical Company, Inc. Alkaline tolerant sulfobetaine amphoteric surfactants
JPH07249600A (ja) 1994-03-14 1995-09-26 Mitsubishi Materials Corp ポリシリコン膜の研磨方法およびポリシリコン膜用研磨剤
JPH08295875A (ja) 1995-04-25 1996-11-12 Shinano Denki Seiren Kk スライシング用研磨液組成物
US5627019A (en) * 1994-09-27 1997-05-06 Agfa-Gevaert, N.V. Method of preparing light-sensitive silver halide emulsions and dispersions of photographically useful compounds
US5713969A (en) * 1995-12-27 1998-02-03 Kao Corporation Abrasives composition and process for producing substrate for magnetic recording medium
US5733819A (en) * 1996-01-29 1998-03-31 Fujimi Incorporated Polishing composition
JPH11302633A (ja) 1998-04-20 1999-11-02 Toshiba Corp 研磨剤及び半導体基板のポリッシング方法
JP2000144109A (ja) 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
JP2001031951A (ja) 1999-07-22 2001-02-06 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
CN1296049A (zh) 1999-11-12 2001-05-23 第一毛织株式会社 用于化学机械抛光的组合物
JP2001185514A (ja) 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US20010011515A1 (en) * 2000-01-25 2001-08-09 Nec Corporation Anticorrosive agent
US20010020234A1 (en) * 1995-11-22 2001-09-06 Neopost Inc. Method and apparatus for a modular postage accounting system
US20020019565A1 (en) * 2000-05-15 2002-02-14 Berk Howard C. Process for making iminodiacetic acid compounds from monoethanolamine substrates
JP2002525383A (ja) 1998-06-26 2002-08-13 キャボット マイクロエレクトロニクス コーポレイション 化学機械的研磨スラリー及びその使用方法
US20020175983A1 (en) * 2000-08-28 2002-11-28 Shunichi Ishikawa Ink composition for inkjet recording
US20030102457A1 (en) * 2001-11-30 2003-06-05 Miller Anne E. Slurry for polishing a barrier layer
US20030124959A1 (en) * 2001-12-05 2003-07-03 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20030121214A1 (en) * 2001-11-28 2003-07-03 Fujimi Incorporated Polishing composition for a substrate for a magnetic disk and polishing method employing it
US20030194879A1 (en) * 2002-01-25 2003-10-16 Small Robert J. Compositions for chemical-mechanical planarization of noble-metal-featured substrates, associated methods, and substrates produced by such methods
JP2003306669A (ja) 2002-04-16 2003-10-31 Nihon Micro Coating Co Ltd 研磨スラリー
US20040055998A1 (en) * 2002-08-02 2004-03-25 Fabrice Letertre Method for providing a smooth wafer surface
US20040065022A1 (en) * 2001-02-20 2004-04-08 Youichi Machii Polishing compound and method for polishing substrate
US20040072943A1 (en) * 2002-09-26 2004-04-15 Shigeyasu Morihiro Thickener for water-based vibration damper
JP2004172606A (ja) 2002-11-08 2004-06-17 Sumitomo Chem Co Ltd 金属研磨材組成物及び研磨方法
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2004266155A (ja) 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
US20040194392A1 (en) 2001-10-26 2004-10-07 Asahi Glass Company, Limited Polishing compound, method for production thereof, and polishing method
JP2004300348A (ja) 2003-03-31 2004-10-28 Fujimi Inc 研磨用組成物
WO2004107429A1 (ja) 2003-05-28 2004-12-09 Hitachi Chemical Co., Ltd. 研磨剤及び研磨方法
WO2005000984A1 (en) 2003-06-27 2005-01-06 Showa Denko K.K. Polishing composition and method for polishing substrate using the composition
US20050014667A1 (en) * 2003-04-18 2005-01-20 Tetsuo Aoyama Aqueous fluoride compositions for cleaning semiconductor devices
JP2005034986A (ja) 2003-06-27 2005-02-10 Showa Denko Kk 研磨用組成物とそれを用いた基板研磨方法
US20050079803A1 (en) 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition having PVNO and associated method for use
US20050090109A1 (en) * 2003-10-23 2005-04-28 Carter Melvin K. CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050192381A1 (en) * 2003-07-18 2005-09-01 Bringley Joseph F. Amine polymer-modified nanoparticulate carriers
US20050194358A1 (en) * 2003-10-27 2005-09-08 Chelle Philippe H. Alumina abrasive for chemical mechanical polishing
US20050201969A1 (en) * 2004-02-23 2005-09-15 Beiersdorf Ag Stable cosmetics
US20050287931A1 (en) * 2002-10-25 2005-12-29 Showa Denko K.K. Polishing slurry and polished substrate
JP2006060205A (ja) 2004-08-18 2006-03-02 Samsung Electronics Co Ltd スラリー組成物、その製造方法、及びこれを用いた加工物の研磨方法
US20060076317A1 (en) 2004-10-12 2006-04-13 Cabot Microelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060124594A1 (en) * 2004-12-09 2006-06-15 Lim Jong-Heun Chemical mechanical polishing (CMP) slurries and CMP methods using and making the same
US20060228999A1 (en) 2005-04-08 2006-10-12 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
US20060242912A1 (en) * 2002-12-09 2006-11-02 Roh Hyun S Slurry composition for secondary polishing of silicon wafer
JP2007019093A (ja) 2005-07-05 2007-01-25 Nitta Haas Inc 半導体研磨用組成物
JP2007051200A (ja) 2005-08-17 2007-03-01 Tosoh Corp シリコンエッチング用組成物
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20070093183A1 (en) * 2005-10-19 2007-04-26 Hitachi Chemical Co., Ltd. Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same
US20070093187A1 (en) * 2005-09-29 2007-04-26 Fuji Photo Film Co., Ltd. Polishing liquid
US20070169421A1 (en) 1999-06-18 2007-07-26 Naoyuki Koyama CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive
US20070175104A1 (en) * 2005-11-11 2007-08-02 Hitachi Chemical Co., Ltd. Polishing slurry for silicon oxide, additive liquid and polishing method
JP2007227446A (ja) 2006-02-21 2007-09-06 Fujifilm Corp バリア用研磨液及び研磨方法
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
US20070213297A1 (en) * 2004-06-24 2007-09-13 Chi-Huey Wong Arrays with cleavable linkers
US20070220813A1 (en) * 2004-03-29 2007-09-27 Hanwha Chemical Corporation Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor
JP2007305677A (ja) 2006-05-09 2007-11-22 Sony Corp 洗浄方法及び半導体装置の製造方法
JP2007311779A (ja) 2006-04-21 2007-11-29 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US20070293048A1 (en) * 2006-06-19 2007-12-20 Lee Jon-Won Polishing slurry
JP2007326916A (ja) 2006-06-06 2007-12-20 Nitta Haas Inc 研磨用組成物および研磨用組成物の製造方法
JP2007335531A (ja) 2006-06-13 2007-12-27 Adeka Corp 金属ｃｍｐ用研磨組成物
US7381690B1 (en) * 2003-09-25 2008-06-03 Ppt Research Inc Stable aqueous slurry suspensions
US20080202037A1 (en) * 2007-02-23 2008-08-28 Ferro Corporation Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US20080241081A1 (en) * 2006-11-07 2008-10-02 Hiroaki Suga Amide compound or salt thereof, and biofilm remover containing the same
US20090010973A1 (en) * 2005-12-14 2009-01-08 Ineos Silicas Limited Silicas
US20090093505A1 (en) * 2004-08-25 2009-04-09 Dany Leopold Jozefien Bylemans Imazalil compositions comprising alkoxylated amines
US20090107520A1 (en) * 2007-10-29 2009-04-30 Wai Mun Lee Amidoxime compounds as chelating agents in semiconductor processes
US20110045741A1 (en) * 2005-04-28 2011-02-24 Techno Semichem Co., Ltd. Auto-Stopping Abrasive Composition for Polishing High Step Height Oxide Layer
US20120003901A1 (en) * 2010-07-01 2012-01-05 Planar Solutions, Llc Composition for advanced node front-and back-end of line chemical mechanical polishing
US20120107412A1 (en) * 2006-05-11 2012-05-03 Regenics As Use of cellular extracts for skin rejuvenation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1224499C (zh) * 2000-12-01 2005-10-26 东洋橡膠工业株式会社 研磨垫及其制造方法和研磨垫用缓冲层
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
CN1307233C (zh) * 2001-11-07 2007-03-28 陶氏环球技术公司 平面化微电子衬底
JP3926293B2 (ja) * 2002-08-28 2007-06-06 花王株式会社 研磨液組成物
JP4649871B2 (ja) * 2003-05-12 2011-03-16 Ｊｓｒ株式会社 化学機械研磨剤キットを用いた化学機械研磨方法
JP2006269600A (ja) * 2005-03-23 2006-10-05 Fuji Photo Film Co Ltd 化学的機械的研磨方法及びこれに用いる研磨液

Patent Citations (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4269959A (en) * 1979-10-22 1981-05-26 Whittaker Corporation Method of preparing improved imbibitive polymer
US4913841A (en) * 1985-05-09 1990-04-03 Sherex Chemical Company, Inc. Alkaline tolerant sulfobetaine amphoteric surfactants
JPH01135026A (ja) 1987-10-16 1989-05-26 Wacker Chemitronic Ges Elekton Grundstoffe Mbh 半導体スライスのくもりのない研摩方法
US4968381A (en) 1987-10-16 1990-11-06 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Method of haze-free polishing for semiconductor wafers
JPH07249600A (ja) 1994-03-14 1995-09-26 Mitsubishi Materials Corp ポリシリコン膜の研磨方法およびポリシリコン膜用研磨剤
US5627019A (en) * 1994-09-27 1997-05-06 Agfa-Gevaert, N.V. Method of preparing light-sensitive silver halide emulsions and dispersions of photographically useful compounds
JPH08295875A (ja) 1995-04-25 1996-11-12 Shinano Denki Seiren Kk スライシング用研磨液組成物
US20010020234A1 (en) * 1995-11-22 2001-09-06 Neopost Inc. Method and apparatus for a modular postage accounting system
US5713969A (en) * 1995-12-27 1998-02-03 Kao Corporation Abrasives composition and process for producing substrate for magnetic recording medium
US5733819A (en) * 1996-01-29 1998-03-31 Fujimi Incorporated Polishing composition
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
JPH11302633A (ja) 1998-04-20 1999-11-02 Toshiba Corp 研磨剤及び半導体基板のポリッシング方法
JP2002525383A (ja) 1998-06-26 2002-08-13 キャボット マイクロエレクトロニクス コーポレイション 化学機械的研磨スラリー及びその使用方法
JP2000144109A (ja) 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
US20070169421A1 (en) 1999-06-18 2007-07-26 Naoyuki Koyama CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive
US7410409B1 (en) * 1999-06-18 2008-08-12 Hitachi Chemical Co., Ltd. Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compound
JP2001031951A (ja) 1999-07-22 2001-02-06 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
CN1296049A (zh) 1999-11-12 2001-05-23 第一毛织株式会社 用于化学机械抛光的组合物
US6447694B1 (en) 1999-11-12 2002-09-10 Cheil Industries, Inc. Composition for chemical mechanical polishing
JP2001185514A (ja) 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US20010011515A1 (en) * 2000-01-25 2001-08-09 Nec Corporation Anticorrosive agent
US20020019565A1 (en) * 2000-05-15 2002-02-14 Berk Howard C. Process for making iminodiacetic acid compounds from monoethanolamine substrates
US20020175983A1 (en) * 2000-08-28 2002-11-28 Shunichi Ishikawa Ink composition for inkjet recording
US20040065022A1 (en) * 2001-02-20 2004-04-08 Youichi Machii Polishing compound and method for polishing substrate
CN1572017A (zh) 2001-10-26 2005-01-26 旭硝子株式会社 研磨剂、研磨剂的制造方法以及研磨方法
US20040194392A1 (en) 2001-10-26 2004-10-07 Asahi Glass Company, Limited Polishing compound, method for production thereof, and polishing method
US20030121214A1 (en) * 2001-11-28 2003-07-03 Fujimi Incorporated Polishing composition for a substrate for a magnetic disk and polishing method employing it
US20030102457A1 (en) * 2001-11-30 2003-06-05 Miller Anne E. Slurry for polishing a barrier layer
US20030124959A1 (en) * 2001-12-05 2003-07-03 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20030194879A1 (en) * 2002-01-25 2003-10-16 Small Robert J. Compositions for chemical-mechanical planarization of noble-metal-featured substrates, associated methods, and substrates produced by such methods
JP2003306669A (ja) 2002-04-16 2003-10-31 Nihon Micro Coating Co Ltd 研磨スラリー
US20040055998A1 (en) * 2002-08-02 2004-03-25 Fabrice Letertre Method for providing a smooth wafer surface
US20040072943A1 (en) * 2002-09-26 2004-04-15 Shigeyasu Morihiro Thickener for water-based vibration damper
US20050287931A1 (en) * 2002-10-25 2005-12-29 Showa Denko K.K. Polishing slurry and polished substrate
US20040148867A1 (en) * 2002-11-08 2004-08-05 Sumitomo Chemical Company, Limited Metal abrasive composition and polishing method
JP2004172606A (ja) 2002-11-08 2004-06-17 Sumitomo Chem Co Ltd 金属研磨材組成物及び研磨方法
US20060242912A1 (en) * 2002-12-09 2006-11-02 Roh Hyun S Slurry composition for secondary polishing of silicon wafer
US20060144824A1 (en) 2003-02-03 2006-07-06 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20060196848A1 (en) 2003-02-03 2006-09-07 Carter Phillip W Readily deinkable toners
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
CN1742066A (zh) 2003-02-03 2006-03-01 卡伯特微电子公司 抛光含硅电介质的方法
US20090029633A1 (en) 2003-02-03 2009-01-29 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2004266155A (ja) 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
JP2004300348A (ja) 2003-03-31 2004-10-28 Fujimi Inc 研磨用組成物
US20050014667A1 (en) * 2003-04-18 2005-01-20 Tetsuo Aoyama Aqueous fluoride compositions for cleaning semiconductor devices
US20060289826A1 (en) 2003-05-28 2006-12-28 Naoyuki Koyama Hazardous substance decomposer and process for producing the same
WO2004107429A1 (ja) 2003-05-28 2004-12-09 Hitachi Chemical Co., Ltd. 研磨剤及び研磨方法
JP2005034986A (ja) 2003-06-27 2005-02-10 Showa Denko Kk 研磨用組成物とそれを用いた基板研磨方法
WO2005000984A1 (en) 2003-06-27 2005-01-06 Showa Denko K.K. Polishing composition and method for polishing substrate using the composition
US20050192381A1 (en) * 2003-07-18 2005-09-01 Bringley Joseph F. Amine polymer-modified nanoparticulate carriers
US7381690B1 (en) * 2003-09-25 2008-06-03 Ppt Research Inc Stable aqueous slurry suspensions
JP2005175437A (ja) 2003-10-10 2005-06-30 Dupont Air Products Nanomaterials Llc Ｐｖｎｏを有する化学的機械的平坦化組成物および関連使用方法
US20050215183A1 (en) 2003-10-10 2005-09-29 Siddiqui Junaid A Chemical-mechanical planarization composition having PVNO and associated method for use
US20050079803A1 (en) 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition having PVNO and associated method for use
US20050090109A1 (en) * 2003-10-23 2005-04-28 Carter Melvin K. CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050194358A1 (en) * 2003-10-27 2005-09-08 Chelle Philippe H. Alumina abrasive for chemical mechanical polishing
US20050201969A1 (en) * 2004-02-23 2005-09-15 Beiersdorf Ag Stable cosmetics
US20070220813A1 (en) * 2004-03-29 2007-09-27 Hanwha Chemical Corporation Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20070213297A1 (en) * 2004-06-24 2007-09-13 Chi-Huey Wong Arrays with cleavable linkers
JP2006060205A (ja) 2004-08-18 2006-03-02 Samsung Electronics Co Ltd スラリー組成物、その製造方法、及びこれを用いた加工物の研磨方法
US20090093505A1 (en) * 2004-08-25 2009-04-09 Dany Leopold Jozefien Bylemans Imazalil compositions comprising alkoxylated amines
CN101040021A (zh) 2004-10-12 2007-09-19 卡伯特微电子公司 用于抛光贵金属的具有聚合物添加剂的化学机械抛光组合物
US20060076317A1 (en) 2004-10-12 2006-04-13 Cabot Microelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060124594A1 (en) * 2004-12-09 2006-06-15 Lim Jong-Heun Chemical mechanical polishing (CMP) slurries and CMP methods using and making the same
US20060228999A1 (en) 2005-04-08 2006-10-12 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
US20110045741A1 (en) * 2005-04-28 2011-02-24 Techno Semichem Co., Ltd. Auto-Stopping Abrasive Composition for Polishing High Step Height Oxide Layer
JP2007019093A (ja) 2005-07-05 2007-01-25 Nitta Haas Inc 半導体研磨用組成物
JP2007051200A (ja) 2005-08-17 2007-03-01 Tosoh Corp シリコンエッチング用組成物
US20070093187A1 (en) * 2005-09-29 2007-04-26 Fuji Photo Film Co., Ltd. Polishing liquid
US20070093183A1 (en) * 2005-10-19 2007-04-26 Hitachi Chemical Co., Ltd. Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same
US20070175104A1 (en) * 2005-11-11 2007-08-02 Hitachi Chemical Co., Ltd. Polishing slurry for silicon oxide, additive liquid and polishing method
US20090010973A1 (en) * 2005-12-14 2009-01-08 Ineos Silicas Limited Silicas
JP2007227446A (ja) 2006-02-21 2007-09-06 Fujifilm Corp バリア用研磨液及び研磨方法
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
JP2007311779A (ja) 2006-04-21 2007-11-29 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2007305677A (ja) 2006-05-09 2007-11-22 Sony Corp 洗浄方法及び半導体装置の製造方法
US20120107412A1 (en) * 2006-05-11 2012-05-03 Regenics As Use of cellular extracts for skin rejuvenation
JP2007326916A (ja) 2006-06-06 2007-12-20 Nitta Haas Inc 研磨用組成物および研磨用組成物の製造方法
JP2007335531A (ja) 2006-06-13 2007-12-27 Adeka Corp 金属ｃｍｐ用研磨組成物
US20070293048A1 (en) * 2006-06-19 2007-12-20 Lee Jon-Won Polishing slurry
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US20080241081A1 (en) * 2006-11-07 2008-10-02 Hiroaki Suga Amide compound or salt thereof, and biofilm remover containing the same
US20080202037A1 (en) * 2007-02-23 2008-08-28 Ferro Corporation Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
US20090107520A1 (en) * 2007-10-29 2009-04-30 Wai Mun Lee Amidoxime compounds as chelating agents in semiconductor processes
US20120003901A1 (en) * 2010-07-01 2012-01-05 Planar Solutions, Llc Composition for advanced node front-and back-end of line chemical mechanical polishing

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
Colorado State University, Dissociation Constants of Organic Acids and Bases, Sep. 3, 2010, Colorado State University, date stamp, tittle, Trimethylamine oxide pka. *
Derwent, Derwent 2009-G84703,2009, Derwent, 1 page. *
Holmes et al, Exploration of polymethacrylate structure-property correlatoins: Advances towards combinatorial and high-throughput methods for biomaterials discovery, May 2, 2008, progpolymsci, Tittle, and 4.1 Free Radical Polymerization. *
New Jersey Department of Health, Hazardous Substance Fact Sheet Sulfuric Acid, 2008, New Jersey Department of Health, first page. *
Rochow, The Chemistry of Silicon, 1973, Pergamon Press, first paragraph p. 1338, copyright page, cover. *
Wikipedia, N-Hydroxysuccinimide, Aug. 17, 2007, Wikipedia, date stamps, 1 paragraph. *
Wikipedia, pH, Oct. 6, 2016, Wikipedia, tittle, first paragraph, discussion of acid and pH. *
Yahoo, Acids and bases. Oxidation and reduction, Dec. 24, 2009, Yahoo, Date stamp, tittle, paragraph discusing oxidation. *

Also Published As

Publication number Publication date
US20100301014A1 (en) 2010-12-02
CN103131330A (zh) 2013-06-05
CN103131330B (zh) 2015-09-23
KR20100121469A (ko) 2010-11-17
KR101564676B1 (ko) 2015-11-02
JP5695708B2 (ja) 2015-04-08
WO2009096495A1 (ja) 2009-08-06
JP2013251561A (ja) 2013-12-12
SG10201605686XA (en) 2016-08-30
JPWO2009096495A1 (ja) 2011-05-26
TW200946660A (en) 2009-11-16
SG188090A1 (en) 2013-03-28
TWI554600B (zh) 2016-10-21
EP2237311A4 (en) 2011-11-30
KR20140146225A (ko) 2014-12-24
KR101564673B1 (ko) 2015-10-30
EP2237311A1 (en) 2010-10-06
CN102084465A (zh) 2011-06-01

Similar Documents

Publication Publication Date Title
US10144849B2 (en) Polishing composition and polishing method using the same
US11332640B2 (en) Polishing composition and polishing method using same
US20060278614A1 (en) Polishing composition and method for defect improvement by reduced particle stiction on copper surface
TWI718225B (zh) 研磨用組成物及矽基板之研磨方法
US6524168B2 (en) Composition and method for polishing semiconductors
TW202138502A (zh) 研磨組成物及其使用之方法
CN103898512B (zh) 一种用于铜互连的化学机械抛光液及工艺
JP2023109798A (ja) 研磨用組成物
WO2018180153A1 (ja) 研磨用組成物および研磨方法
US9803107B2 (en) Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
TW202134365A (zh) 研磨組成物及其使用之方法
US20110250755A1 (en) Method of polishing wafer surface on which copper and silicon are exposed
EP3133639A1 (en) Composition for polishing silicon wafers
TW202317717A (zh) 拋光組成物及其使用方法
US11421132B2 (en) Polishing composition
JP2021161385A (ja) 研磨用組成物
WO2020162144A1 (ja) 研磨用組成物
TW202317716A (zh) 拋光組成物及其使用方法
KR20240045086A (ko) 표면 처리 조성물, 표면 처리 방법, 및 반도체 기판의 제조 방법
TW202219235A (zh) 研磨組成物及其使用方法
CN114450376A (zh) 研磨用组合物

Legal Events

Date Code Title Description
AS Assignment

Owner name: FUJIMI INCORPORATED, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MIZUNO, TAKAHIRO;IZAWA, YOSHIHIRO;AKATSUKA, TOMOHIKO;SIGNING DATES FROM 20100629 TO 20100708;REEL/FRAME:024769/0971

AS Assignment

Owner name: FUJIMI INCORPORATED, JAPAN

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE OF THE THIRD ASSIGNEE, TOMOHIKO AKATSUKA. PREVIOUSLY RECORDED ON REEL 024796 FRAME 0971. ASSIGNOR(S) HEREBY CONFIRMS THE EXECUTION DATE IS CORRECTED TO READ, 06/29/2010;ASSIGNORS:MIZUNO, TAKAHIRO;IZAWA, YOSHIHIRO;AKATSUKA, TOMOHIKO;SIGNING DATES FROM 20100629 TO 20100703;REEL/FRAME:025079/0439

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4