TW202138502A - 研磨組成物及其使用之方法 - Google Patents
研磨組成物及其使用之方法 Download PDFInfo
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- TW202138502A TW202138502A TW110105350A TW110105350A TW202138502A TW 202138502 A TW202138502 A TW 202138502A TW 110105350 A TW110105350 A TW 110105350A TW 110105350 A TW110105350 A TW 110105350A TW 202138502 A TW202138502 A TW 202138502A
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- Prior art keywords
- acid
- composition
- weight
- abrasive
- removal rate
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- 239000000203 mixture Substances 0.000 title claims abstract description 118
- 238000005498 polishing Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims description 14
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 46
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000003112 inhibitor Substances 0.000 claims abstract description 40
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 39
- 239000003623 enhancer Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000007797 corrosion Effects 0.000 claims abstract description 29
- 238000005260 corrosion Methods 0.000 claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 16
- 238000000227 grinding Methods 0.000 claims description 25
- -1 halide salt Chemical class 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000007800 oxidant agent Substances 0.000 claims description 15
- 239000003082 abrasive agent Substances 0.000 claims description 13
- 150000003839 salts Chemical class 0.000 claims description 12
- 239000002738 chelating agent Substances 0.000 claims description 11
- 239000002736 nonionic surfactant Substances 0.000 claims description 11
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 150000007524 organic acids Chemical class 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000012964 benzotriazole Substances 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 4
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 4
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical group OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 claims description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000001099 ammonium carbonate Substances 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 4
- NLSCHDZTHVNDCP-UHFFFAOYSA-N caesium nitrate Chemical compound [Cs+].[O-][N+]([O-])=O NLSCHDZTHVNDCP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004310 lactic acid Substances 0.000 claims description 4
- 235000014655 lactic acid Nutrition 0.000 claims description 4
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 claims description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 claims description 4
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 claims description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 claims description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 3
- 235000019270 ammonium chloride Nutrition 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 3
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 claims description 3
- 150000003536 tetrazoles Chemical class 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 claims description 2
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 claims description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- RNMCCPMYXUKHAZ-UHFFFAOYSA-N 2-[3,3-diamino-1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound NC1(N)CCCC(CC(O)=O)(CC(O)=O)C1(CC(O)=O)CC(O)=O RNMCCPMYXUKHAZ-UHFFFAOYSA-N 0.000 claims description 2
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 claims description 2
- JWYUFVNJZUSCSM-UHFFFAOYSA-N 2-aminobenzimidazole Chemical compound C1=CC=C2NC(N)=NC2=C1 JWYUFVNJZUSCSM-UHFFFAOYSA-N 0.000 claims description 2
- LOTVQXNRIAEYCG-UHFFFAOYSA-N 3-hydroxy-2-(hydroxymethyl)-2-[hydroxymethyl(methyl)amino]propanoic acid Chemical compound OCN(C)C(CO)(CO)C(O)=O LOTVQXNRIAEYCG-UHFFFAOYSA-N 0.000 claims description 2
- CRIAGZDVEWMBRY-UHFFFAOYSA-N 4,5-dichloro-2h-benzotriazole Chemical compound ClC1=CC=C2NN=NC2=C1Cl CRIAGZDVEWMBRY-UHFFFAOYSA-N 0.000 claims description 2
- HXICLUNGKDYXRL-UHFFFAOYSA-N 4,5-dimethyl-2h-benzotriazole Chemical compound CC1=CC=C2NN=NC2=C1C HXICLUNGKDYXRL-UHFFFAOYSA-N 0.000 claims description 2
- YNZBMBQGRVOJDU-UHFFFAOYSA-N 4-(2-chloroethyl)-2H-benzotriazole Chemical compound ClCCC1=CC=CC=2NN=NC=21 YNZBMBQGRVOJDU-UHFFFAOYSA-N 0.000 claims description 2
- WHCCOSVDXKJRKC-UHFFFAOYSA-N 4-(chloromethyl)-2h-benzotriazole Chemical compound ClCC1=CC=CC2=C1N=NN2 WHCCOSVDXKJRKC-UHFFFAOYSA-N 0.000 claims description 2
- SARFJCZLWQFFEH-UHFFFAOYSA-N 4-benzyl-2h-benzotriazole Chemical compound C=1C=CC=2NN=NC=2C=1CC1=CC=CC=C1 SARFJCZLWQFFEH-UHFFFAOYSA-N 0.000 claims description 2
- IPIVUPVIFPKFTG-UHFFFAOYSA-N 4-butyl-2h-benzotriazole Chemical compound CCCCC1=CC=CC2=C1N=NN2 IPIVUPVIFPKFTG-UHFFFAOYSA-N 0.000 claims description 2
- NGKNMHFWZMHABQ-UHFFFAOYSA-N 4-chloro-2h-benzotriazole Chemical compound ClC1=CC=CC2=NNN=C12 NGKNMHFWZMHABQ-UHFFFAOYSA-N 0.000 claims description 2
- QRHDSDJIMDCCKE-UHFFFAOYSA-N 4-ethyl-2h-benzotriazole Chemical compound CCC1=CC=CC2=C1N=NN2 QRHDSDJIMDCCKE-UHFFFAOYSA-N 0.000 claims description 2
- OKFSBQOGHYYGRZ-UHFFFAOYSA-N 4-hexyl-2h-benzotriazole Chemical compound CCCCCCC1=CC=CC2=C1N=NN2 OKFSBQOGHYYGRZ-UHFFFAOYSA-N 0.000 claims description 2
- TVOIATIUZOHKFY-UHFFFAOYSA-N 4-pentyl-2h-benzotriazole Chemical compound CCCCCC1=CC=CC2=NNN=C12 TVOIATIUZOHKFY-UHFFFAOYSA-N 0.000 claims description 2
- BVNWQSXXRMNYKH-UHFFFAOYSA-N 4-phenyl-2h-benzotriazole Chemical compound C1=CC=CC=C1C1=CC=CC2=C1NN=N2 BVNWQSXXRMNYKH-UHFFFAOYSA-N 0.000 claims description 2
- VXDLXVDZTJOKAO-UHFFFAOYSA-N 4-propyl-2h-benzotriazole Chemical compound CCCC1=CC=CC2=C1N=NN2 VXDLXVDZTJOKAO-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 claims description 2
- 239000004475 Arginine Substances 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 2
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 claims description 2
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004472 Lysine Substances 0.000 claims description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- SEQKRHFRPICQDD-UHFFFAOYSA-N Tricine Natural products OCC(CO)(CO)[NH2+]CC([O-])=O SEQKRHFRPICQDD-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 2
- 235000011054 acetic acid Nutrition 0.000 claims description 2
- 235000004279 alanine Nutrition 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- 235000012538 ammonium bicarbonate Nutrition 0.000 claims description 2
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims description 2
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- SOIFLUNRINLCBN-UHFFFAOYSA-N ammonium thiocyanate Chemical compound [NH4+].[S-]C#N SOIFLUNRINLCBN-UHFFFAOYSA-N 0.000 claims description 2
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 2
- 235000003704 aspartic acid Nutrition 0.000 claims description 2
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 claims description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 229920001400 block copolymer Polymers 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims description 2
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 claims description 2
- 229940075419 choline hydroxide Drugs 0.000 claims description 2
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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Abstract
一種研磨組成物,包括一磨料;一pH調整劑;一阻障膜移除速率增強劑;一低k移除速率抑制劑;一含唑腐蝕抑制劑;以及一釕移除速率增強劑。一種研磨一基材的方法,其包括下述步驟:施加本文所述之該研磨組成物至一基材之一表面,其中該表面包含釕或一硬遮罩材料;使一襯墊與該基材之該表面接觸,並相對於該基材移動該襯墊。
Description
相關申請案之交互參照
本申請案主張2020年2月13日申請之美國臨時申請案第62/975,829號之優先權,其內容以全文引用方式併入本文。
半導體產業不斷被驅使藉由程序、材料及整合創新進一步使裝置微小化來改良晶片效能。早期材料創新包括銅的引用,其係於互連結構中取代鋁作為傳導材料;以及鉭(Ta)/氮化鉭(TaN)的使用,其係作為擴散阻障以將非傳導/絕緣體介電材料與該銅傳導材料隔離。銅(Cu)被選為互連材料係因為其低電阻率及優異的電遷移抗性。
然而,當較新世代晶片的形貌體縮小時,多層Cu/阻障/介電質堆疊體需變得更薄及更一致以在後段製程(BEOL)中維持有效的互連電阻率。較薄的銅與Ta/TaN阻障膜方案於沉積時出現電阻率及可撓性的問題。舉例而言,隨著較小的尺寸與先進的製造節點,電阻率會持續呈指數級惡化,而且電晶體電路速度(於前段製程(FEOL))的改善會被來自傳導Cu/阻障佈線(BEOL)之延遲而縮減一半。釕(Ru)在使用作襯裡材料、阻障層、以及傳導層上已嶄露其為首選。釕不僅對介電層具有優異的抗Cu(anti-Cu)擴散作用,亦能有利於在未使用銅晶種層下於小尺寸溝槽中進行直接電填充銅(direct copper electro-filling)。此外,釕亦作為VIAs用材料而被研究,以取代傳統的鎢(W)金屬。
提供本發明概要以介紹在下文之實施方式中進一步描述之概念的擇要。本發明概要不意欲用以辨別所請標的之關鍵或必要特徵,亦並不意欲用作輔助限制所請標的的範圍。
如本文所界定,除非另行指明,否則所表述之所有百分比應理解為相對於研磨組成物之總重量的重量百分比。
在一態樣中,本文所揭露的實施例關於一種研磨組成物,其包括一磨料;一pH調整劑;一阻障膜移除速率增強劑;一低k移除速率抑制劑;一含唑腐蝕抑制劑;以及一釕移除速率增強劑。
在另一態樣中,本文所揭露的實施例關於一種研磨組成物,其包括一磨料;一pH調整劑;一有機酸或其鹽類;一非離子型界面活性劑;一含唑腐蝕抑制劑;以及一化合物,該化合物選自於由一銨鹽、一硫氰酸鹽、一鹵化物鹽類、一硝酸鹽、硝酸、或其一混合物所構成的群組。
在又另一態樣中,本文所揭露的實施例關於一種研磨一基材(例如包括釕之基材)的方法,包括下列步驟:施加本文所述之研磨組成物至一基材之一表面,其中該表面包含釕或一硬遮罩材料;以及使一襯墊與該基材之該表面接觸,並相對於該基材移動該襯墊。
所請標的之其他態樣及優點將會從以下描述與所附請求項而清楚顯知。
本文所揭露的實施例大體而言係關於組成物及使用所述組成物來研磨基材之方法,該基材包括至少一釕部分及/或一硬遮罩部分(例如鎢、碳化物、氮化陶瓷(例如TiN)、及其摻雜衍生物),以及更具體地可包括至少釕、硬遮罩、及銅部分。本文所揭露的組成物可有效地移除釕及/或硬遮罩材料,並同時使銅腐蝕最小化(例如,使表面粗糙度最小化)。舉例而言,本文所揭露的組成物可對研磨先進節點膜特別地有用,其包括銅、一釕襯裡、一硬遮罩材料(例如鈦及摻鈦衍生物、鎢及摻鎢衍生物(例如WB4
)、碳化物(例如BC、B4
C、TiC、SiC、及WC)、含硼材料(例如B6
O、BC2
N、及AlMgB14
)、及氮化陶瓷材料(例如SiN、TiN、BN)、阻障材料(例如Ta、TaN),以及介電材料(例如TEOS、低k、超低k等)。
許多目前可用的CMP漿料係經特定設計來移除較普遍在舊型晶片中的材料,諸如前述的銅與鎢。然而,在半導體產業的後段製程(BEOL)應用中,釕正使用作為一襯裡材料,因其具有良好的導電性、沉積性質,並且對Cu擴散有阻抗性。有別於一些諸如鈷與銅等其他材料,釕係相對化學穩定故不會劣化,而且在研磨期間難以移除。此外,釕係常用於與作為傳導層的銅連接使用。如以上所提及,銅係一相對柔軟的材料,因此容易移除。銅對許多半導體裝置的功能係必要的,因此如果使用的CMP漿料太容易剝除或損壞銅層或嵌體,其可能會對裝置成品的效能有負面影響。舊型CMP漿料可能無法在未對銅造成有害及不可接受之缺陷下有效地移除釕,因為銅更易受化學腐蝕所影響。因此,較不先進的漿料會出現不可接受的腐蝕、晶圓形貌、及/或針對欲研磨之多組分基材中一或更多組分的移除速率選擇度。此外,更複雜的整合方案可使用一硬遮罩作為一蝕刻遮罩來與Ru襯裡及Cu傳導層連接,而此即出現了該研磨漿料須能有效移除的又另一材料。
隨著在半導體製造中多組分整合方案的用途增加及尺寸縮小,存在對CMP漿料的市場需求,該漿料可有效地研磨包括釕、銅、及一硬遮罩材料的基材,並具有最小限度銅腐蝕且對所有其他成分有良好移除速率與選擇度。
在一或更多實施例中,本文所述的研磨組成物包括一磨料;一pH調整劑;一阻障膜移除速率增強劑;一低k移除速率抑制劑;一含唑腐蝕抑制劑;以及一釕移除速率增強劑。在一或更多實施例中,該研磨組成物亦可包括一螯合劑及/或一氧化劑。在一或更多實施例中,根據本揭露內容之研磨組成物可包括約0.1重量%到約50重量%的磨料、約0.01重量%到約10重量%的pH調整劑、約0.002重量%到約4重量%的阻障膜移除速率增強劑、約0.0005重量%到約5重量%的低k移除速率抑制劑、約0.0001重量%到約重量1%的含唑腐蝕抑制劑、約0.0001重量%到約5重量%的釕移除速率增強劑、以及剩餘重量百分比(例如約20重量%到約99重量%)的溶劑(例如去離子水)。在一個更多實施例中,該研磨組成物可進一步包括約0.001重量%到約1重量%的螯合劑及/或約0.001重量%到約5重量%的氧化劑。
在一或更多實施例中,本揭露內容提供一濃縮的研磨組成物,其可在使用之前用水稀釋直到兩倍、或直到四倍、或直到六倍、或直到八倍、或直到十倍。在其他實施例中,本揭露內容提供一種用於含釕基材的使用點(POU)研磨組成物,其包含上述研磨組成物、水、及任擇地一氧化劑。
在一或更多實施例中,一POU研磨組成物可包括約0.1重量%到約12重量%的磨料、約0.01重量%到約5重量%的pH調整劑、約0.002重量%到約2重量%的阻障膜移除速率增強劑、約0.0005重量%到約0.5重量%的低k移除速率抑制劑、約0.0001重量%到約0.1重量%的含唑腐蝕抑制劑、約0.0001重量%到約0.5重量%的釕移除速率增強劑、可任擇地約0.001重量%到約5重量%的氧化劑、以及約80重量%到約99重量%的溶劑(例如,去離子水)。在一或更多實施例中,該POU研磨組成物可進一步包括0.001重量%到0.1重量%的螯合劑。
在一或更多實施例中,一濃縮研磨組成物可包括約1重量%到約50重量%的磨料、約0.1重量%到約10重量%的pH調整劑、約0.02重量%到約4重量%的阻障膜移除速率增強劑、約0.005重量%到約5重量%的低k移除速率抑制劑、約0.001重量%到約1重量%的含唑腐蝕抑制劑、約0.001重量%到約5重量%的釕移除速率增強劑、以及剩餘重量百分比(例如,約20重量%到約98.5重量%)的溶劑(例如,去離子水)。在一或更多實施例中,該研磨組成物可進一步包括約0.01重量%到約1重量%的螯合劑及/或約0.01重量%到約5重量%的氧化劑。
在一或更多實施例中,本文所述之該研磨組成物可包括至少一(例如兩者或三者)磨料。在一些實施例中,該至少一磨料係選自於由陽離子型磨料、實質上中性磨料、以及陰離子型磨料所構成的群組。在一或更多實施例中,該至少一磨料係選自於由氧化鋁、二氧化矽、二氧化鈦、氧化鈰、氧化鋯、其共形成產物(即氧化鋁、二氧化矽、二氧化鈦、氧化鈰、或氧化鋯的共形成產物)、塗佈磨料、表面修飾磨料、以及其混合物所構成的群組。在一些實施例中,該至少一磨料並不包括氧化鈰。在一些實施例中,該至少一磨料係高純度,且可具有小於約100ppm的醇類、小於約100ppm的氨、以及小於約100十億分率(ppb)的鹼金屬陽離子諸如鈉離子。基於該POU研磨組成物之總重量計,該磨料的數量可在約0.1%至約12%或者其任何子範圍(例如,約0.5%至約10%)。
在一些實施例中,該至少一磨料的數量為本文所述研磨組成物之至少約0.1重量%(例如,至少約0.5%、至少約1%、至少約2%、至少約4%、至少約5%、至少約10%、至少約12%、至少約15%、或至少約20%)到至多約50重量%(例如,至多約45%、至多約40%、至多約35%、至多約30%、至多約25%、至多約20%、至多約15%、至多約12%、至多約10%、或至多約5%)。
在一或更多實施例中,本文所述之該研磨組成物可包括至少一(例如兩者或三者)pH調整劑。在一些實施例中,該至少一pH調整劑係選自於由氫氧化銨、氫氧化鈉、氫氧化鉀、氫氧化銫、單乙醇胺、二乙醇胺、三乙醇胺、甲基乙醇胺、甲基二乙醇胺、四丁基氫氧化銨、四丙基氫氧化銨、四乙基氫氧化銨、四甲基氫氧化銨、乙基三甲基氫氧化銨、二乙基二甲基氫氧化銨、二甲基二丙基氫氧化銨、苄基三甲基氫氧化銨、三(2-羥乙基)甲基氫氧化銨、氫氧化膽鹼、及其任何組合物所構成的群組。
在一些實施例中,該至少一pH調整劑的數量為本文所述研磨組成物之至少約0.01重量%(例如至少約0.05%、至少約0.1%、至少約0.5%、至少約1%、至少約2%、至少約4%、至少約5%、至少約6%、或至少約8%)到至多約10重量%(例如至多約9%、至多約8%、至多約7%、至多約6%、至多約5%、至多約4%、至多約3%、至多約2%、至多約1%、至多約0.5%、至多約0.2%、或至多約0.1%)。
在一些實施例中,該研磨組成物的pH值可在至少約7(例如至少約7.5、至少約8、至少約8.5、至少約9、至少約9.5、至少約10、至少約10.5、至少約11、至少約11.5、或至少約12)到至多約14(例如至多約13.5、至多約13、至多約12.5、至多約12、至多約11.5、至多約11、至多約10.5、至多約10、至多約9.5、或至多約9)的範圍內。在不期望受理論束縛的情況下,一般相信具有低於7之pH的研磨組成物會顯著地增加銅移除速率及腐蝕;而具有高於14之pH的研磨組成物會影響懸浮磨料的穩定度,並會顯著地增加粗糙度且降低由此一組成物研磨之膜的整體品質。為了得到所欲之pH,可調整在本文所述研磨組成物中成分的相對濃度。
在一或更多實施例,本文所述之研磨組成物可包括至少一(例如兩者或三者)阻障膜移除速率增強劑。在一些實施例中,該至少一阻障膜移除速率增強劑係一有機酸(諸如羧酸、胺基酸、磺酸、或膦酸)或其鹽類。在一些實施例中,該阻障膜移除速率增強劑可為選自於由葡萄糖酸、乳酸、檸檬酸、酒石酸、蘋果酸、羥基乙酸、丙二酸、甲酸、乙二酸、乙酸、丙酸、過乙酸、琥珀酸、乳酸、胺基乙酸、苯氧乙酸、二羥乙甘胺酸、縮二羥乙酸、甘油酸、三(羥甲基)甲基甘胺酸、丙胺酸、組胺酸、纈胺酸、苯丙胺酸、脯胺酸、麩醯胺酸、天門冬胺酸、麩胺酸、精胺酸、離胺酸、酪胺酸、苯甲酸、其鹽類、及其混合物所構成之群組的一有機酸或一其鹽類。在不期望受理論束縛的情況下,一般相信有機酸或其鹽類(諸如以上所述者)可在本文所述研磨組成物中被用來作為一有效的阻障膜移除速率增強劑以在半導體基材中改良阻障膜(例如Ta或TaN膜)的移除速率。
在一些實施例中,該阻障膜移除速率增強劑的數量為本文所述研磨組成物之至少約0.002重量%(例如,至少約0.005%、至少約0.01%、至少約0.05%、至少約0.1%、至少約0.15%、至少約0.2%、至少約0.5%、至少約1%、至少約1.5%、或至少約2%)到至多約4重量%(例如,至多約3.5%、至多約3%、至多約2.5%、至多約2%、至多約1.5%、或至多約1%)。
在一或更多實施例中,本文所述之該研磨組成物可包括至少一(例如兩者或三者)低k移除速率抑制劑。在一些實施例中,該至少一低k移除速率抑制劑係一非離子型界面活性劑。在一或更多實施例中,該非離子型界面活性劑係選自於由烷氧化醇、烷氧化烷基酚、烷氧化三苯乙烯基酚、烷氧化山梨醇酯、聚烷氧化物、聚伸烷基氧化物嵌段共聚物、四羥基寡聚物、烷氧化二胺、及其混合物所構成的群組。在一或更多實施例中,該非離子型界面活性劑係具有下述數量平均分子量之一聚合物:至少約500g/mol、或至少約1,000g/mol、或至少約2,500g/mol、或至少約5,000g/mol、或至少約7,500g/mol、或至少約10,000g/mol。在一或更多實施例中,該非離子型界面活性劑係具有下述數量平均分子量之一聚合物:至多約1,000,000g/mol、或至多約750,000g/mol、或至多約500,000g/mol、或至多約250,000g/mol、或至多100,000g/mol。在一或更多實施例中,烷氧化非離子型界面活性劑的烷氧化基基團係乙氧化基、丙氧化基、或乙氧化基與丙氧化基基團的組合。在不期望受理論束縛的情況下,出乎意料的是非離子型界面活性劑(諸如以上所述者)可在本文所述研磨組成物中被用來作為一低k移除速率抑制劑,以在半導體基材中降低或最小化低k膜(例如摻碳矽氧化物膜)的移除速率。
在一些實施例中,該低k速率抑制劑的數量為本文所述研磨組成物之至少約0.0005重量%(例如,至少約0.001%、至少約0.005%、至少約0.01%、至少約0.05%、至少約0.1%、至少約0.5%、至少約1%、至少約1.5%、至少約2%、或至少約3%)到至多約5重量%(例如,至多約4.5%、至多約4%、至多約3.5%、至多約3%、至多約2.5%、至多約2%、至多約1.5%、至多約1%、至多約0.5%、或至多約0.1%)。
在一或更多實施例中,本文所述之該研磨組成物可包括至少一(例如兩者或三者)含唑腐蝕抑制劑。在一些實施例中,該至少一含唑腐蝕抑制劑係選自於由經取代或未經取代的三唑、經取代或未經取代的四唑、經取代或未經取代的苯并三唑、經取代或未經取代的吡唑、經取代或未經取代的咪唑所構成的群組。在一或更多實施例中,該含唑腐蝕抑制劑可選自於由1,2,4-三唑、1,2,3-三唑、四唑、苯并三唑、甲苯基三唑、甲基苯并三唑(例如1-甲基苯并三唑、4-甲基苯并三唑、及5-甲基苯并三唑)、乙基苯并三唑(例如1-乙基苯并三唑)、丙基苯并三唑(例如1-丙基苯并三唑)、丁基苯并三唑(例如1-丁基苯并三唑與5-丁基苯并三唑)、戊基苯并三唑(例如1-戊基苯并三唑)、己基苯并三唑(例如1-己基苯并三唑與5-己基苯并三唑)、二甲基苯并三唑(例如5,6-二甲基苯并三唑)、氯苯并三唑(例如5-氯苯并三唑)、二氯苯并三唑(例如5,6-二氯苯并三唑)、氯甲基苯并三唑(例如1-(氯甲基)-1-氫-苯并三唑)、氯乙基苯并三唑、苯基苯并三唑、苄基苯并三唑、胺基三唑、胺基苯并咪唑、胺基四唑、及其混合物所構成的群組。在一或更多實施例中,該組成物可包括苯并三唑及苯并三唑衍生物(例如經取代的苯并三唑)。在不期望受理論束縛的情況下,一般相信含唑腐蝕抑制劑(諸如以上所述者)可在半導體基材中顯著地減少或最小化銅的移除速率。
在一些實施例中,該含唑腐蝕抑制劑的數量為本文所述研磨組成物之至少約0.0001重量%(例如至少約0.0002%、至少約0.0005%、至少約0.001%、至少約0.002%、至少約0.005%、至少約0.01%、至少約0.02%、至少約0.05%、至少約0.1%、至少約0.2%、或至少約0.5%)到至多約1重量%(例如至多約0.8%、至多約0.6%、至多約0.5%、至多約0.4%、至多約0.2%、至多約0.1%、至多約0.05%、至多約0.02%、至多約0.01%、或至多約0.005%)。
在一或更多實施例中,本文所述之該研磨組成物可包括至少一(例如兩者或三者)釕移除速率增強劑。在一些實施例中,該至少一釕移除速率增強劑可包括銨鹽、硫氰酸鹽、硝酸或其鹽類、以及鹵化物鹽類。在一些實施例中,該至少一釕移除速率增強劑係選自於由氫氧化銨、氯化銨、氟化銨、溴化銨、硫酸銨、碳酸銨、碳酸氫銨、硝酸銨、磷酸銨、醋酸銨、硫氰酸銨、硫氰酸鉀、硫氰酸鈉、硝酸、硝酸鈉、硝酸鉀、硝酸銣、硝酸銫、氟化鈉、氟化鉀、氟化銣、氟化銫、氯化鈉、氯化鉀、氯化銣、氯化銫、及其混合物所構成的群組。
在一些實施例中,該釕移除速率增強劑的數量可為該組成物之約0.0001重量%到約5重量%。在一或更多實施例中,該釕移除速率增強劑為本文所述研磨組成物之至少約0.0001重量%(例如至少約0.0002%、至少約0.0005%、至少約0.001%、至少約0.002%、至少約0.005%、至少約0.01%、至少約0.02%、至少約0.05%、至少約0.1%、至少約0.2%、或至少約0.5%)到至多約5重量%(例如至多約4%、至多約3%、至多約2%、至多約1%、至多約0.8%、至多約0.6%、至多約0.5%、至多約0.4%、至多約0.2%、至多約0.1%、至多約0.05%、至多約0.02%、至多約0.01%、或至多約0.005%)。
在一或更多實施例中,本文所述之該研磨組成物可任擇地包括至少一(例如兩者或三者)螯合劑。在一些實施例中,該至少一任擇的螯合劑可為一含胺基的羧酸(例如聚胺基聚羧酸)或一膦酸。在一些實施例中,該螯合劑係選自於由乙二胺四乙酸、亞胺二乙酸、N-羥乙基-乙二胺三乙酸、氮基三乙酸、二伸乙基三胺五乙酸、羥乙基乙二胺三乙酸、三伸乙基四胺六乙酸、環己二胺四乙酸、氮基三甲基膦酸、乙二胺四(亞甲基膦酸)、1-羥基亞乙基-1,1-二膦酸、二伸乙基三胺五(亞甲基膦酸)、及其組合所構成的群組。在不期望受理論束縛的情況下,一般相信將螯合劑(諸如以上所述者)含納於本文所述研磨組成物中可顯著地減少或最小化在半導體基材上可觀察到之缺陷(諸如在銅晶圓之表面上的缺陷)。
在一些實施例中,該螯合劑的數量為本文所述研磨組成物之至少約0.001重量%(例如,至少約0.002%、至少約0.005%、至少約0.01%、至少約0.02%、至少約0.05%、至少約0.1%、至少約0.2%、或至少約0.5%)到至多約1重量%(例如,至多約0.8%、至多約0.6%、至多約0.5%、至多約0.4%、至多約0.2%、至多約0.1%、至多約0.05%、至多約0.02%、至多約0.01%、或至多約0.005%)。
當稀釋一濃縮漿料以形成一POU漿料時,可加入任擇的一氧化劑(或氧化試劑)。該氧化劑選自於由過氧化氫、正過碘酸、偏過碘酸、二中過碘酸、二正過碘酸、過碘酸銨、過碘酸鉀、過碘酸鈉、過硫酸銨、碘酸、碘酸鹽、過氯酸、過氯酸鹽、羥胺、羥胺鹽類、及其任意組合所構成的群組。在一或更多實施例中,該氧化劑可為過氧化氫。
在一些實施例中,該氧化劑的數量為本文所述研磨組成物之至少約0.001重量%(例如至少約0.002%、至少約0.004%、至少約0.005%、至少約0.01%、至少約0.025%、至少約0.05%、至少約0.075%、至少約0.1%、至少約0.5%、至少約1%、或至少約2%)到至多約5重量%(例如至多約4.5%、至多約4%、至多約3.5%、至多約3%、至多約2.5%、至多約2%、至多約1.5%、至多約1%、至多約0.5%、或至多約0.1%)。在一些實施例中,在不期望受理論束縛的情況下,一般相信氧化劑可助於移除在含有硬遮罩基材中的硬遮罩材料。
在一些實施例中,本文所述之該研磨組成物可包括一溶劑(例如一主要溶劑),諸如水。 在一些實施例中,該溶劑(例如水)的數量為本文所述研磨組成物之至少約20重量%(例如至少約25%、至少約30%、至少約35%、至少約40%、至少約45%、至少約50%、至少約55%、至少約60%、至少約65%、至少約70%、至少約75%、至少約80%、至少約85%、至少約90%、至少約92%、至少約94%、至少約95%、或至少約97%)到至多約99重量%(例如至多約98%、至多約96%、至多約94%、至多約92%、至多約90%、至多約85%、至多約80%、至多約75%、至多約70%、或至多約65%)。
在一或更多實施例中,一任擇的輔助溶劑(例如一有機溶劑)可被用在本揭露內容之該研磨組成物(例如POU或濃縮研磨組成物)中,其可助於含唑腐蝕抑制劑的溶解。在一或更多實施例中,該輔助溶劑可為一或更多醇類、伸烷基二醇、或伸烷基二醇醚。在一或更多實施例中,該輔助溶劑包括選自於由乙醇、1-丙醇、2-丙醇、正丁醇、丙二醇、2-甲氧基乙醇、2-乙氧基乙醇、丙二醇丙醚、二甲基亞碸、及乙二醇所構成之群組的一或更多溶劑。
在一些實施例中,該的數量輔助溶劑為本文所述研磨組成物之至少約0.0025重量%(例如至少約0.005%、至少約0.01%、至少約0.02%、至少約0.05%、至少約0.1%、至少約0.2%、至少約0.4%、至少約0.6%、至少約0.8%、或至少約1%)到至多約5重量%(例如至多約4%、至多約3%、至多約2%、至多約1%、至多約0.8%、至多約0.6%、至多約0.5%、或至多約0.1%)。
在一或更多實施例中,本文所述之該研磨組成物可實質上不含一或更多特定組分,諸如有機溶劑、pH調整劑、四級銨化合物(例如鹽類或氫氧化物)、胺類、鹼金屬鹽類(諸如鹼金屬氫氧化物)、含氟化合物、含矽化合物諸如矽烷(例如烷氧基矽烷)、亞胺類(例如脒類,諸如1,8-二氮雜雙環[5.4.0]-7-十一碳烯(DBU)與1,5-二氮雜雙環[4.3.0]壬-5-烯(DBN))、鹽類(例如鹵化物鹽類或金屬鹽類)、聚合物(例如陽離子型或陰離子型聚合物)、界面活性劑(例如陽離子型界面活性劑、陰離子型界面活性劑、或非離子型界面活性劑)、塑化劑、氧化劑(例如過碘酸)、腐蝕抑制劑(例如唑或非唑腐蝕抑制劑)、及/或特定磨料(例如氧化鈰磨料、非離子型磨料、表面修飾磨料、或帶負/正電荷磨料)。可自該研磨組成物中排除的該鹵化物鹽類包括鹼金屬鹵化物(例如鹵化鈉或鹵化鉀)或鹵化銨(例如氯化銨),且可為氟化物、氯化物、溴化物、或碘化物。於本文使用時,「實質上不含」於研磨組成物中的一成分意指並未刻意加入該研磨組成物中的成分。在一些實施例中,本文所述之該研磨組成物可具有至多約1000ppm(例如至多約500ppm、至多約250ppm、至多約100ppm、至多約50ppm、至多約10ppm、或至多約1ppm)的一或更多實質上不含於該研磨組成物的上述成分。在一些實施例中,本文所述之該等研磨組成物可完全不含一或更多以上成分。
本揭露內容亦深入考量一種使用任何上述研磨組成物(例如濃縮物或POU漿料)之方法。藉由該濃縮物,該方法可包含下述步驟:稀釋該濃縮物以形成一POU漿料(例如至少兩倍),然後將至少部分包含釕及/或一硬遮罩材料的一表面與該POU漿料接觸。在一些實施例中,一氧化劑可在稀釋前、後或期間加入至漿料。藉由該POU漿料,該方法包含將至少部分包含釕及/或一硬遮罩材料之該表面與該漿料接觸的步驟。
在一或更多實施例中,本揭露內容以一種研磨方法為特徵,其可包括:施加根據本揭露內容之一研磨組成物至一基材(例如晶圓),其具有至少釕及/或一硬遮罩材料在該基材之一表面上;以及使一襯墊與該基材之該表面接觸,並相對於該基材移動該襯墊。在一些實施例中,當該基材包括至少一或更多矽氧化物、釕、銅、硬遮罩材料、及/或阻障材料(例如Ta、TaN)時,以上方法可有效地研磨該基材而沒有顯著腐蝕或非所欲之移除速率選擇度。在一或更多實施例中,銅移除速率係小於約500Å/min、或小於約400Å/min、或小於約300Å/min、或小於約200Å/min、或小於約150Å/min、或小於約125Å/min、或小於約100Å/min、或小於約90Å/min、或小於約80Å/min、或小於約70Å/min。在一或更多實施例中,根據本揭露內容以一研磨組成物在45°C下培養5分鐘之2cm x 2cm銅試料的靜態蝕刻速率(SER)係小於約10Å/min、或小於約8Å/min、或小於約6Å/min、或小於約5Å/min、或小於約4Å/min、或小於約3.5Å/min、或小於約2Å/min、或小於約2.5 Å/min。 在一或更多實施例中,釕移除速率係至少約3Å/min、或至少約5Å/min、或至少約15Å/min、或至少約25Å/min、或至少約35Å/min、或至少約45Å/min、或至少約55Å/min。在一或更多實施例中,銅研磨速率對釕研磨速率(Cu:Ru)的比例係至多約35:1、或至多約30:1、或至多約25:1、或至多約20:1、或至多約15:1、或至多約10:1、或至多約5:1、或至多約4:1、或至多約3:1、或至多約2.5:1、或至多約2:1、或至多約1.5:1、或至多約1:1。
應注意的是本文所述之術語「矽氧化物」係在表達上意欲包括未摻雜及經摻雜兩種型式的矽氧化物。舉例而言,在一或更多實施例中,該矽氧化物可與選自下述之至少一摻雜劑摻雜:碳、氮(矽氧化物用)、氧、氫、或者任何其他已知的矽氧化物用摻雜劑。矽氧化物的一些範例包括TEOS(四乙基正矽酸鹽)、SiOC、SiOCN、SiOCH、SiOH及SiON。
在一些實施例中,使用本文所述之研磨組成物的該方法可進一步包括透過一或更多步驟由經該研磨組成物處理過之基材來生產半導體裝置。舉例而言,經本文所述之該研磨組成物處理過之基材可使用光蝕刻、離子植入、乾式/溼式蝕刻、電漿蝕刻、沉積作用(例如PVD、CVD、ALD、ECD)、晶圓黏片、模切、封裝以及測試來生產半導體裝置。
以下具體實例應被解釋為僅是例示性的,無論以任何方式對本揭露內容之其餘部分均無限制性。毋庸進一步詳細闡述,咸信熟習此藝者可基於本文中之描述而最大程度地利用本發明。
實例
在此等實例中,係於兩個研磨系統中執行研磨。一個研磨系統使用Ebara CMP研磨機、Fujibo軟襯墊、105hPa的下壓力、以及在100與500mL/min之間的漿料流動速率來在300mm晶圓上執行研磨。第二個研磨系統使用AMAT Mirra CMP研磨機、Fujibo軟襯墊、1.5psi的下壓力、以及在100與400mL/min之間的漿料流動速率來在200mm晶圓上執行研磨。
以下實例中所使用的一般組成物顯示於下表1中。該等經測試組成物之差異的具體細節將在討論各別實例時進一步詳細解釋。
表1
實例1
組分 | 組成物的重量% |
pH調整劑(鹼) | 0.05-5 |
阻障膜移除速率增強劑(有機酸) | 0.02-2 |
低k移除速率抑制劑 | 0.001-1 |
含唑腐蝕抑制劑 | 0.0001-0.1 |
釕移除速率增強劑 | 0.0001-1(如有使用) |
磨料(二氧化矽) | 0.1-12 |
氧化劑(H2 O2 ) | 0.1-5 |
溶劑(DI水) | 80-99 |
pH | 7-12 |
下表2顯示當使用組成物1-6研磨時,針對Ru、Cu、及黑鑽石1(BD-1)空白晶圓的移除速率。除了於下文及表2中所識別的差異之外,組成物1-6含有在相同濃度下的相同組分。該BD-1空白晶圓係於矽晶圓上塗覆一低k介電材料(即摻碳之矽氧化物)。
組成物1包括一Cu移除速率抑制劑(Cu RRI),其為一含唑腐蝕抑制劑。組成物2-5各包括在不同濃度下的一釕移除速率增強劑(Ru RRE),如表2所示。組成物6與7包括該Ru RRE及兩個Cu移除速率抑制劑(即Cu RRI-1與Cu RRI-2),其兩者皆為含唑腐蝕抑制劑。組成物8包括該Ru RRE及僅一個Cu RRI。
此結果出乎意料地顯示該Ru RRE的添加會增加Ru移除速率至約30埃/min的一可接受性範圍。此外,隨Ru RRE的添加而增加的Cu移除速率可藉由第二Cu RRI的添加而被適當控制。此外,此結果顯示BD-1的移除速率並未因Ru RRE與Cu-RRI-2的添加而被顯著地影響。
表2
RR=移除速率且SER=靜態蝕刻速率
雖然僅有數個示範實施例詳述於上文中,熟習此項技藝者將易於理解,在不實質上逸脫本發明的情況下,示範實施例中諸多修改係為可能。因此,所有此類修改係意欲含納於如以下請求項所界定之本揭露內容的範疇內。
Claims (21)
- 一種研磨組成物,其包含: 一磨料; 一pH調整劑; 一阻障膜移除速率增強劑; 一低k移除速率抑制劑; 一含唑腐蝕抑制劑;以及 一釕移除速率增強劑。
- 如請求項1之研磨組成物,其中該磨料係選自於由氧化鋁、二氧化矽、二氧化鈦、氧化鈰、氧化鋯、自氧化鋁、二氧化矽、二氧化鈦、氧化鈰、或氧化鋯之共形成產物、塗佈磨料、表面修飾磨料、以及其混合物所構成的群組。
- 如請求項1之研磨組成物,其中該磨料的數量為該組成物之約0.1重量%到約50重量%。
- 如請求項1之研磨組成物,其中該阻障膜移除速率增強劑係選自於由葡萄糖酸、乳酸、檸檬酸、酒石酸、蘋果酸、羥基乙酸、丙二酸、甲酸、乙二酸、乙酸、丙酸、過乙酸、琥珀酸、乳酸、乙酸鉀、檸檬酸鉀、胺基乙酸、苯氧乙酸、二羥乙甘胺酸、縮二羥乙酸、甘油酸、三(羥甲基)甲基甘胺酸、丙胺酸、組胺酸、纈胺酸、苯丙胺酸、脯胺酸、麩醯胺酸、天門冬胺酸、麩胺酸、精胺酸、離胺酸、酪胺酸、苯甲酸、其鹽類、及其混合物所構成之群組的一有機酸或其鹽類。
- 如請求項1之研磨組成物,其中該阻障膜移除速率增強劑的數量為該組成物之約0.002重量%到約4重量%。
- 如請求項1之研磨組成物,其中該低k移除速率抑制劑係一非離子型界面活性劑。
- 如請求項6之研磨組成物,其中該非離子型界面活性劑係選自於由烷氧化醇、烷氧化烷基酚、烷氧化三苯乙烯基酚、烷氧化山梨醇酯、聚烷氧化物、聚伸烷基氧化物嵌段共聚物、四羥基寡聚物、烷氧化二胺、及其混合物所構成的群組。
- 如請求項1之研磨組成物,其中該低k移除速率抑制劑的數量為該組成物之約0.0005重量%到約5重量%。
- 如請求項1之研磨組成物,其中該含唑腐蝕抑制劑係選自於由三唑、四唑、苯并三唑、甲苯基三唑、1,2,4-三唑、乙基苯并三唑、丙基苯并三唑、丁基苯并三唑、戊基苯并三唑、己基苯并三唑、二甲基苯并三唑、氯苯并三唑、二氯苯并三唑、氯甲基苯并三唑、氯乙基苯并三唑、苯基苯并三唑、苄基苯并三唑、胺基三唑、胺基苯并咪唑、吡唑、咪唑、胺基四唑、及其混合物所構成的群組。
- 如請求項1之研磨組成物,其中該含唑腐蝕抑制劑的數量為該組成物之約0.0001重量%到約1重量%。
- 如請求項1之研磨組成物,其中該pH調整劑係選自於由氫氧化銨、氫氧化鈉、氫氧化鉀、氫氧化銫、單乙醇胺、二乙醇胺、三乙醇胺、甲基乙醇胺、甲基二乙醇胺、四丁基氫氧化銨、四丙基氫氧化銨、四乙基氫氧化銨、四甲基氫氧化銨、乙基三甲基氫氧化銨、二乙基二甲基氫氧化銨、二甲基二丙基氫氧化銨、苄基三甲基氫氧化銨、三(2-羥乙基)甲基氫氧化銨、氫氧化膽鹼、及其任意組合所構成的群組。
- 如請求項1之研磨組成物,其中該pH調整劑的數量為該組成物之約0.01重量%到約10重量%。
- 如請求項1之研磨組成物,其中該釕移除速率增強劑係選自於由氫氧化銨、氯化銨、氟化銨、溴化銨、硫酸銨、碳酸銨、碳酸氫銨、硝酸銨、磷酸銨、醋酸銨、硫氰酸銨、硫氰酸鉀、硫氰酸鈉、硝酸、硝酸鈉、硝酸鉀、硝酸銣、硝酸銫、氟化鈉、氟化鉀、氟化銣、氟化銫、氯化鈉、氯化鉀、氯化銣、氯化銫、及其混合物所構成的群組。
- 如請求項1之研磨組成物,其中該釕移除速率增強劑的數量為該組成物之約0.0001重量%到約5重量%。
- 如請求項1之研磨組成物,其進一步包含: 一螯合劑,其係選自於由乙二胺四乙酸、亞胺二乙酸、N-羥乙基-乙二胺三乙酸、氮基三乙酸、二伸乙基三胺五乙酸、羥乙基乙二胺三乙酸、三伸乙基四胺六乙酸、環己二胺四乙酸、氮基三甲基膦酸、乙二胺四(亞甲基膦酸)、1-羥基亞乙基-1,1-二膦酸、二伸乙基三胺五(亞甲基膦酸)、及其組合所構成的群組。
- 如請求項15之研磨組成物,其中該螯合劑的數量為該組成物之約0.001重量%到約1重量%。
- 如請求項1之研磨組成物,其進一步包含一氧化劑選自於由過氧化氫、正過碘酸、偏過碘酸、二中過碘酸、二正過碘酸、過碘酸銨、過碘酸鉀、過碘酸鈉、過硫酸銨、碘酸、碘酸鹽、過氯酸、過氯酸鹽、羥胺、羥胺鹽類、及其任意組合所構成的群組。
- 如請求項1之研磨組成物,其中該組成物包含: 數量為該組成物之約0.1重量%到約50重量%的該磨料; 數量為該組成物之約0.01重量%到約10重量%的該pH調整劑; 數量為該組成物之約0.002重量%到約4重量%的該阻障膜移除速率增強劑; 數量為該組成物之約0.0005重量%到約5重量%的該低k移除速率抑制劑; 數量為該組成物之約0.0001重量%到約1重量%的該含唑腐蝕抑制劑;以及 數量為該組成物之約0.0001重量%到約5重量%的該釕移除增強劑。
- 如請求項1之研磨組成物,其中該組成物的pH係在約7與約14之間。
- 一種研磨組成物,其包含: 一磨料; 一pH調整劑; 一有機酸或其鹽類; 一非離子型界面活性劑; 一含唑腐蝕抑制劑;以及 一化合物,其選自於由一銨鹽、一硫氰酸鹽、一鹵化物鹽類、一硝酸鹽、硝酸、以及其一混合物所構成的群組。
- 一種研磨基材的方法,其包含下述步驟: 施加如請求項1之研磨組合物至一基材之表面,其中該表面包含釕或一硬遮罩材料;以及 使一襯墊與該基材之該表面接觸,並相對於該基材移動該襯墊。
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US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
US20100096584A1 (en) * | 2008-10-22 | 2010-04-22 | Fujimi Corporation | Polishing Composition and Polishing Method Using the Same |
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US8545715B1 (en) * | 2012-10-09 | 2013-10-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method |
US20160107286A1 (en) * | 2013-04-25 | 2016-04-21 | Hitachi Chemical Company, Ltd. | Cmp polishing solution and polishing method using same |
US9735030B2 (en) * | 2014-09-05 | 2017-08-15 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for polishing cobalt films |
US9481811B2 (en) * | 2015-02-20 | 2016-11-01 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced edge roll-off |
JP6978933B2 (ja) * | 2017-12-27 | 2021-12-08 | ニッタ・デュポン株式会社 | 研磨用組成物 |
US11279850B2 (en) * | 2018-03-28 | 2022-03-22 | Fujifilm Electronic Materials U.S.A., Inc. | Bulk ruthenium chemical mechanical polishing composition |
US20200102476A1 (en) * | 2018-09-28 | 2020-04-02 | Versum Materials Us, Llc | Barrier Slurry Removal Rate Improvement |
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2021
- 2021-02-08 JP JP2022549238A patent/JP2023514586A/ja active Pending
- 2021-02-08 EP EP21753150.8A patent/EP4103662A4/en active Pending
- 2021-02-08 CN CN202180009070.1A patent/CN114945648A/zh active Pending
- 2021-02-08 KR KR1020227031237A patent/KR20220137754A/ko active Search and Examination
- 2021-02-08 WO PCT/US2021/017049 patent/WO2021162978A1/en unknown
- 2021-02-08 US US17/169,685 patent/US20210253904A1/en active Pending
- 2021-02-17 TW TW110105350A patent/TW202138502A/zh unknown
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JP2023514586A (ja) | 2023-04-06 |
WO2021162978A1 (en) | 2021-08-19 |
EP4103662A4 (en) | 2023-08-16 |
US20210253904A1 (en) | 2021-08-19 |
CN114945648A (zh) | 2022-08-26 |
KR20220137754A (ko) | 2022-10-12 |
EP4103662A1 (en) | 2022-12-21 |
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