TWI835725B - 表面處理方法及用於該方法的組成物 - Google Patents

表面處理方法及用於該方法的組成物 Download PDF

Info

Publication number
TWI835725B
TWI835725B TW107110073A TW107110073A TWI835725B TW I835725 B TWI835725 B TW I835725B TW 107110073 A TW107110073 A TW 107110073A TW 107110073 A TW107110073 A TW 107110073A TW I835725 B TWI835725 B TW I835725B
Authority
TW
Taiwan
Prior art keywords
surface treatment
composition
treatment composition
trimethylsilyl
aprotic solvent
Prior art date
Application number
TW107110073A
Other languages
English (en)
Chinese (zh)
Other versions
TW201842148A (zh
Inventor
威廉 A. 沃吉特薩克
朴起永
水谷篤史
Original Assignee
美商富士軟片電子材料美國股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商富士軟片電子材料美國股份有限公司 filed Critical 美商富士軟片電子材料美國股份有限公司
Publication of TW201842148A publication Critical patent/TW201842148A/zh
Application granted granted Critical
Publication of TWI835725B publication Critical patent/TWI835725B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/008—Temporary coatings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/18—Materials not provided for elsewhere for application to surfaces to minimize adherence of ice, mist or water thereto; Thawing or antifreeze materials for application to surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6528—In-situ cleaning after layer formation, e.g. removing process residues
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Lubricants (AREA)
  • Detergent Compositions (AREA)
TW107110073A 2017-03-24 2018-03-23 表面處理方法及用於該方法的組成物 TWI835725B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762476182P 2017-03-24 2017-03-24
US62/476,182 2017-03-24
US201862617688P 2018-01-16 2018-01-16
US62/617,688 2018-01-16

Publications (2)

Publication Number Publication Date
TW201842148A TW201842148A (zh) 2018-12-01
TWI835725B true TWI835725B (zh) 2024-03-21

Family

ID=63581154

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107110073A TWI835725B (zh) 2017-03-24 2018-03-23 表面處理方法及用於該方法的組成物

Country Status (9)

Country Link
US (1) US10593538B2 (https=)
EP (1) EP3602606B1 (https=)
JP (3) JP7452782B2 (https=)
KR (1) KR102519448B1 (https=)
CN (2) CN110462525B (https=)
IL (1) IL269490B (https=)
SG (1) SG11201908617QA (https=)
TW (1) TWI835725B (https=)
WO (1) WO2018175682A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10941301B2 (en) * 2017-12-28 2021-03-09 Tokyo Ohka Kogyo Co., Ltd. Surface treatment method, surface treatment agent, and method for forming film region-selectively on substrate
EP3735325A4 (en) 2018-01-05 2021-03-03 FUJIFILM Electronic Materials U.S.A, Inc. SURFACE TREATMENT COMPOSITIONS AND PROCEDURES
KR102084164B1 (ko) * 2018-03-06 2020-05-27 에스케이씨 주식회사 반도체 공정용 조성물 및 반도체 공정
SG11202009171XA (en) * 2018-04-05 2020-10-29 Central Glass Co Ltd Surface treatment method of wafer and composition used for said method
US20200035494A1 (en) * 2018-07-30 2020-01-30 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
CN113169060B (zh) * 2018-11-22 2025-04-01 中央硝子株式会社 倒角部处理剂组合物和晶圆的制造方法
KR20220050922A (ko) * 2019-08-21 2022-04-25 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 처리 조성물 및 방법
JP7574798B2 (ja) * 2019-08-27 2024-10-29 株式会社レゾナック 組成物、及び接着性ポリマーの洗浄方法
JP7446097B2 (ja) * 2019-12-06 2024-03-08 東京応化工業株式会社 表面処理剤及び表面処理方法
CN115668459B (zh) * 2020-05-21 2025-12-16 中央硝子株式会社 半导体基板的表面处理方法及表面处理剂组合物
KR20230015959A (ko) * 2020-05-21 2023-01-31 샌트랄 글래스 컴퍼니 리미티드 반도체 기판의 표면 처리 방법, 및 표면처리제 조성물
JP7701868B2 (ja) * 2021-12-13 2025-07-02 東京応化工業株式会社 基板表面処理方法、基板表面の領域選択的製膜方法、及び表面処理剤
US20230317464A1 (en) * 2022-03-31 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
US20240101929A1 (en) * 2022-09-14 2024-03-28 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
WO2024248021A1 (ja) * 2023-05-31 2024-12-05 セントラル硝子株式会社 膜形成用組成物、基板の製造方法、および膜形成用組成物の製造方法
US20250157825A1 (en) * 2023-11-13 2025-05-15 Fujifilm Electronic Materials U.S.A., Inc. Etching methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI331365B (en) * 2005-02-18 2010-10-01 Tokyo Electron Ltd Method for treating a dielectric film
TW201232196A (en) * 2010-12-28 2012-08-01 Central Glass Co Ltd Wafer washing method
TW201323595A (zh) * 2011-11-11 2013-06-16 中央硝子股份有限公司 晶圓之表面處理方法及表面處理液、與含氮化矽晶圓用之表面處理劑、表面處理液、及表面處理方法
TW201437763A (zh) * 2013-03-18 2014-10-01 Fujitsu Ltd 光阻組成物及用於形成圖案之方法
US20160291477A1 (en) * 2015-03-31 2016-10-06 Tokyo Ohka Kogyo Co., Ltd. Surface treatment process and surface treatment liquid

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032338B2 (ja) 1977-03-16 1985-07-27 太陽誘電株式会社 導電性塗料焼付電極を有する磁器コンデンサ
JPS54107442A (en) 1978-02-09 1979-08-23 Nippon Boshoku Kogyo Kk External source type* electrical corrosion preventive anode system for bottom portion of outdoor steel container
JP4959095B2 (ja) * 2000-07-10 2012-06-20 イーケイシー テクノロジー インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
TW200409669A (en) 2002-04-10 2004-06-16 Dow Corning Ireland Ltd Protective coating composition
US7041226B2 (en) * 2003-11-04 2006-05-09 Lexmark International, Inc. Methods for improving flow through fluidic channels
US20070218811A1 (en) 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US7922823B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
KR100840498B1 (ko) * 2007-05-29 2008-06-23 주식회사 동부하이텍 반도체소자의 패턴 붕괴 방지 방법
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
KR20160114736A (ko) 2008-10-21 2016-10-05 도오꾜오까고오교 가부시끼가이샤 표면 처리액 및 표면 처리 방법, 그리고 소수화 처리 방법 및 소수화된 기판
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
SG173043A1 (en) 2009-01-21 2011-08-29 Central Glass Co Ltd Silicon wafer cleaning agent
JP5324361B2 (ja) 2009-08-28 2013-10-23 東京応化工業株式会社 表面処理剤及び表面処理方法
JP5663160B2 (ja) 2009-09-28 2015-02-04 東京応化工業株式会社 表面処理剤及び表面処理方法
US8222196B2 (en) * 2009-11-12 2012-07-17 Ecolab Usa Inc. Composition and methods for removal of polymerized non-trans fats
JP5680932B2 (ja) 2009-11-13 2015-03-04 東京応化工業株式会社 表面処理剤及び表面処理方法
JP5708191B2 (ja) 2010-05-19 2015-04-30 セントラル硝子株式会社 保護膜形成用薬液
US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
WO2011155407A1 (ja) 2010-06-07 2011-12-15 セントラル硝子株式会社 保護膜形成用薬液
JP5716527B2 (ja) 2010-06-28 2015-05-13 セントラル硝子株式会社 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP2012033880A (ja) 2010-06-30 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液
JP2012015335A (ja) 2010-06-30 2012-01-19 Central Glass Co Ltd 保護膜形成用薬液、および、ウェハ表面の洗浄方法
KR20130100297A (ko) 2010-08-27 2013-09-10 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 건조 동안의 높은 종횡비 구조물의 붕괴 방지 방법
US20120164818A1 (en) 2010-12-28 2012-06-28 Central Glass Company, Limited Process for Cleaning Wafers
US8828144B2 (en) * 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
JP6213616B2 (ja) * 2011-10-28 2017-10-18 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP5953721B2 (ja) 2011-10-28 2016-07-20 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP2013104954A (ja) 2011-11-11 2013-05-30 Central Glass Co Ltd ウェハの表面処理方法及び表面処理液
JP5288147B2 (ja) 2011-11-29 2013-09-11 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP5974514B2 (ja) * 2012-02-01 2016-08-23 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
JP5969253B2 (ja) 2012-02-10 2016-08-17 東京応化工業株式会社 表面処理剤及び表面処理方法
JP2013168583A (ja) 2012-02-16 2013-08-29 Toagosei Co Ltd 表面処理剤および表面処理方法
CN103007911B (zh) * 2012-12-01 2014-04-30 福州大学 一种表面处理剂用复合催化剂的制备方法
RU2015128132A (ru) * 2012-12-14 2017-01-18 Басф Се Применение композиций, содержащих поверхностно-активное вещество и средство придания гидрофобности, для предохранения рельефа от разрушения при обработке рельефных материалов с линейными размерами, равными 50 нм или менее
JP6191372B2 (ja) 2013-10-04 2017-09-06 セントラル硝子株式会社 ウェハの洗浄方法
KR20230129193A (ko) * 2013-12-06 2023-09-06 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
CN103773236B (zh) * 2014-01-17 2016-02-03 浙江大学 一种在基材表面制备防水防油型陶瓷涂料的方法
JP2017516310A (ja) 2014-05-12 2017-06-15 東京エレクトロン株式会社 フレキシブルなナノ構造の乾燥を改善するための方法及びシステム
JP6564312B2 (ja) 2015-03-31 2019-08-21 東京応化工業株式会社 表面処理方法及び表面処理液
US9976037B2 (en) * 2015-04-01 2018-05-22 Versum Materials Us, Llc Composition for treating surface of substrate, method and device
JP6592303B2 (ja) * 2015-08-14 2019-10-16 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄方法および基板洗浄装置
JP6681796B2 (ja) 2016-06-21 2020-04-15 東京応化工業株式会社 シリル化剤溶液、表面処理方法、及び半導体デバイスの製造方法
JP6310583B2 (ja) * 2017-02-10 2018-04-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN108250916A (zh) * 2017-12-29 2018-07-06 安徽鑫发铝业有限公司 一种汽车用铝型材表面处理工艺
EP3735325A4 (en) 2018-01-05 2021-03-03 FUJIFILM Electronic Materials U.S.A, Inc. SURFACE TREATMENT COMPOSITIONS AND PROCEDURES

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI331365B (en) * 2005-02-18 2010-10-01 Tokyo Electron Ltd Method for treating a dielectric film
TW201232196A (en) * 2010-12-28 2012-08-01 Central Glass Co Ltd Wafer washing method
TW201323595A (zh) * 2011-11-11 2013-06-16 中央硝子股份有限公司 晶圓之表面處理方法及表面處理液、與含氮化矽晶圓用之表面處理劑、表面處理液、及表面處理方法
TW201437763A (zh) * 2013-03-18 2014-10-01 Fujitsu Ltd 光阻組成物及用於形成圖案之方法
US20160291477A1 (en) * 2015-03-31 2016-10-06 Tokyo Ohka Kogyo Co., Ltd. Surface treatment process and surface treatment liquid

Also Published As

Publication number Publication date
JP7452782B2 (ja) 2024-03-19
TW201842148A (zh) 2018-12-01
EP3602606A4 (en) 2020-02-05
CN110462525B (zh) 2024-07-26
JP2023027033A (ja) 2023-03-01
JP7502388B2 (ja) 2024-06-18
JP2020512693A (ja) 2020-04-23
CN118344845A (zh) 2024-07-16
JP2024103792A (ja) 2024-08-01
KR102519448B1 (ko) 2023-04-07
KR20190124795A (ko) 2019-11-05
US20180277357A1 (en) 2018-09-27
SG11201908617QA (en) 2019-10-30
CN110462525A (zh) 2019-11-15
US10593538B2 (en) 2020-03-17
EP3602606A1 (en) 2020-02-05
IL269490A (en) 2019-11-28
IL269490B (en) 2022-06-01
WO2018175682A1 (en) 2018-09-27
EP3602606B1 (en) 2024-06-26

Similar Documents

Publication Publication Date Title
TWI835725B (zh) 表面處理方法及用於該方法的組成物
JP7789116B2 (ja) エッチング組成物
US11447642B2 (en) Methods of using surface treatment compositions
TWI838332B (zh) 用於移除半導體基材上的殘餘物之清潔調配物
CN111225965B (zh) 蚀刻组合物
TWI884922B (zh) 表面處理組成物及方法
CN115044375A (zh) 蚀刻组合物
WO2023192000A1 (en) Surface treatment compositions and methods
TW202436611A (zh) 表面處理組成物及方法
CN120981430A (zh) 蚀刻组成物