TWI764948B - 反射型光罩基底、反射型光罩之製造方法及半導體裝置之製造方法 - Google Patents

反射型光罩基底、反射型光罩之製造方法及半導體裝置之製造方法 Download PDF

Info

Publication number
TWI764948B
TWI764948B TW106136066A TW106136066A TWI764948B TW I764948 B TWI764948 B TW I764948B TW 106136066 A TW106136066 A TW 106136066A TW 106136066 A TW106136066 A TW 106136066A TW I764948 B TWI764948 B TW I764948B
Authority
TW
Taiwan
Prior art keywords
film
mask
reflective
absorber
pattern
Prior art date
Application number
TW106136066A
Other languages
English (en)
Chinese (zh)
Other versions
TW201827916A (zh
Inventor
池邊洋平
笑喜勉
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW201827916A publication Critical patent/TW201827916A/zh
Application granted granted Critical
Publication of TWI764948B publication Critical patent/TWI764948B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
TW106136066A 2016-10-21 2017-10-20 反射型光罩基底、反射型光罩之製造方法及半導體裝置之製造方法 TWI764948B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP??2016-206953 2016-10-21
JP2016206953 2016-10-21

Publications (2)

Publication Number Publication Date
TW201827916A TW201827916A (zh) 2018-08-01
TWI764948B true TWI764948B (zh) 2022-05-21

Family

ID=62019158

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106136066A TWI764948B (zh) 2016-10-21 2017-10-20 反射型光罩基底、反射型光罩之製造方法及半導體裝置之製造方法

Country Status (6)

Country Link
US (1) US11187972B2 (enExample)
JP (2) JP7193344B2 (enExample)
KR (1) KR102631779B1 (enExample)
SG (1) SG11201903409SA (enExample)
TW (1) TWI764948B (enExample)
WO (1) WO2018074512A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11531264B2 (en) * 2018-05-25 2022-12-20 Hoya Corporation Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
JP2020034666A (ja) * 2018-08-29 2020-03-05 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7504574B2 (ja) * 2018-10-22 2024-06-24 デクセリアルズ株式会社 原盤、原盤の製造方法及び転写物の製造方法
WO2020085288A1 (ja) * 2018-10-22 2020-04-30 デクセリアルズ株式会社 原盤、原盤の製造方法及び転写物の製造方法
KR20200013567A (ko) * 2018-11-19 2020-02-07 부경호 극자외선(euv) 노광에 사용되는 마스크 및 극자외선 노광방법
WO2020153228A1 (ja) * 2019-01-21 2020-07-30 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法
CN113614636A (zh) * 2019-03-07 2021-11-05 Hoya株式会社 掩模坯料、转印用掩模的制造方法、及半导体器件的制造方法
JP7313166B2 (ja) 2019-03-18 2023-07-24 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
TWI845677B (zh) * 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
JP7346088B2 (ja) 2019-05-31 2023-09-19 株式会社トッパンフォトマスク 反射型フォトマスクブランクス及び反射型フォトマスク
JP7610346B2 (ja) * 2019-11-01 2025-01-08 テクセンドフォトマスク株式会社 反射型マスク及び反射型マスクの製造方法
JP7525354B2 (ja) * 2020-09-28 2024-07-30 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
US12181790B2 (en) * 2021-03-03 2024-12-31 Shin-Etsu Chemical Co., Ltd. Reflective mask blank and reflective mask
JP7616098B2 (ja) * 2021-03-03 2025-01-17 信越化学工業株式会社 反射型マスクブランク及び反射型マスク
TWI870225B (zh) * 2021-03-29 2025-01-11 日商Ｈｏｙａ股份有限公司 光罩基底、光罩及顯示裝置之製造方法
KR102694331B1 (ko) * 2021-04-12 2024-08-13 한국전자기술연구원 이트륨계 기반의 극자외선 노광용 펠리클
US20220350233A1 (en) * 2021-05-03 2022-11-03 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US12366798B2 (en) 2021-06-07 2025-07-22 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography mask and methods
JP7557098B1 (ja) 2024-04-11 2024-09-26 株式会社トッパンフォトマスク 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
JP2025163548A (ja) * 2024-04-17 2025-10-29 信越化学工業株式会社 反射型フォトマスクブランク、及び反射型フォトマスクの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200424750A (en) * 2003-02-03 2004-11-16 Hoya Corp Blank photomask, photomask and method of pattern transferring using photomask
EP2664959A1 (en) * 2012-05-16 2013-11-20 Shin-Etsu Chemical Co., Ltd. Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask
TW201518855A (zh) * 2013-11-15 2015-05-16 S&S Tech Co Ltd 極紫外線微影用空白罩幕以及使用該空白罩幕的光罩
TW201602716A (zh) * 2014-03-18 2016-01-16 Ｈｏｙａ股份有限公司 附阻劑層之基底、其製造方法、光罩基底及壓印用模基底、以及轉印用光罩、壓印用模及彼等之製造方法
WO2016159043A1 (ja) * 2015-03-31 2016-10-06 富士フイルム株式会社 転写フィルム、積層体、静電容量型入力装置および画像表示装置

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509649B1 (enExample) 1970-10-07 1975-04-15
JPS5950443A (ja) 1982-09-16 1984-03-23 Hitachi Ltd Ｘ線マスク
JP2883354B2 (ja) 1989-06-30 1999-04-19 ホーヤ株式会社 Ｘ線マスク材料およびｘ線マスク
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP3143035B2 (ja) 1994-12-27 2001-03-07 ホーヤ株式会社 転写マスクの製造方法
JPH09298150A (ja) 1996-05-09 1997-11-18 Nikon Corp 反射型マスク
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
JP2002299227A (ja) 2001-04-03 2002-10-11 Nikon Corp 反射マスクとその製造方法及び露光装置
JP2002313713A (ja) * 2001-04-19 2002-10-25 Nikon Corp レチクル、それを用いた露光装置及び露光方法
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2004335513A (ja) * 2003-04-30 2004-11-25 Nikon Corp レチクルの保持方法、保持装置及び露光装置
JP4693395B2 (ja) 2004-02-19 2011-06-01 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP4099589B2 (ja) 2004-02-20 2008-06-11 ソニー株式会社 マスクパターン補正方法、露光用マスクおよびマスク製造方法
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP2006173502A (ja) 2004-12-17 2006-06-29 Nikon Corp 光学素子及びこれを用いた投影露光装置
JP2006324268A (ja) * 2005-05-17 2006-11-30 Dainippon Printing Co Ltd Ｅｕｖ露光用マスクブランクスおよびその製造方法、ｅｕｖ露光用マスク
JP4961990B2 (ja) 2005-12-14 2012-06-27 大日本印刷株式会社 マスクブランクおよび階調マスク
WO2007138747A1 (ja) 2006-05-30 2007-12-06 Hoya Corporation レジスト膜剥離方法、マスクブランクスの製造方法および転写マスクの製造方法
KR20080001023A (ko) * 2006-06-29 2008-01-03 주식회사 에스앤에스텍 극자외선 반사형 블랭크 마스크와 포토마스크 및 그제조방법
JP4848932B2 (ja) 2006-11-13 2011-12-28 大日本印刷株式会社 プロキシミティ露光用階調マスク
JP5009649B2 (ja) 2007-02-28 2012-08-22 Ｈｏｙａ株式会社 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
JP4602430B2 (ja) 2008-03-03 2010-12-22 株式会社東芝 反射型マスク及びその作製方法
JP2008268980A (ja) * 2008-07-29 2008-11-06 Shin Etsu Chem Co Ltd フォトマスクの製造方法
JP5282507B2 (ja) 2008-09-25 2013-09-04 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法
KR101485754B1 (ko) * 2008-09-26 2015-01-26 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용하여 제조되는 포토마스크
JP2011228417A (ja) * 2010-04-19 2011-11-10 Dainippon Printing Co Ltd 反射型マスクブランクの再生方法および反射型マスクの製造方法
JP5648392B2 (ja) * 2010-09-22 2015-01-07 凸版印刷株式会社 反射型フォトマスクブランクおよびその製造方法
KR101883025B1 (ko) * 2010-12-24 2018-07-27 호야 가부시키가이샤 마스크 블랭크 및 그 제조 방법, 및 전사용 마스크 및 그 제조 방법
WO2012105508A1 (ja) 2011-02-01 2012-08-09 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5648558B2 (ja) 2011-03-30 2015-01-07 凸版印刷株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法
JP6084391B2 (ja) 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6060636B2 (ja) 2012-01-30 2017-01-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
US20150079502A1 (en) 2012-03-14 2015-03-19 Hoya Corporation Mask blank and method of manufacturing a transfer mask
JP5989376B2 (ja) 2012-03-30 2016-09-07 Hoya株式会社 欠陥評価用マスクブランクの製造方法、並びに欠陥評価方法
JP6136445B2 (ja) 2013-03-27 2017-05-31 凸版印刷株式会社 反射型位相シフトマスク及び製造方法
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
JP6408790B2 (ja) * 2013-05-31 2018-10-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
TWI616718B (zh) 2013-08-30 2018-03-01 Hoya Corp 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及半導體裝置之製造方法
JP6165871B2 (ja) * 2013-09-10 2017-07-19 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
KR20170120212A (ko) * 2013-09-18 2017-10-30 호야 가부시키가이샤 반사형 마스크 블랭크 및 그 제조방법, 반사형 마스크 그리고 반도체 장치의 제조방법
JP6234898B2 (ja) * 2013-09-25 2017-11-22 信越化学工業株式会社 フォトマスクブランクの製造方法
US9798050B2 (en) * 2013-09-27 2017-10-24 Hoya Corporation Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device
KR102127907B1 (ko) * 2013-09-27 2020-06-29 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
JP6381921B2 (ja) * 2014-01-30 2018-08-29 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
WO2015141078A1 (ja) * 2014-03-18 2015-09-24 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6430155B2 (ja) * 2014-06-19 2018-11-28 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
US9612522B2 (en) * 2014-07-11 2017-04-04 Applied Materials, Inc. Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor
US9581890B2 (en) 2014-07-11 2017-02-28 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
US9581889B2 (en) 2014-07-11 2017-02-28 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
KR20160016098A (ko) * 2014-08-04 2016-02-15 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
JP6440996B2 (ja) 2014-08-22 2018-12-19 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP6425951B2 (ja) 2014-09-17 2018-11-21 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
WO2016043147A1 (ja) 2014-09-17 2016-03-24 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6441012B2 (ja) * 2014-09-30 2018-12-19 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6651314B2 (ja) 2014-12-26 2020-02-19 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6485070B2 (ja) 2015-01-27 2019-03-20 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法、ならびに該マスクブランク用の反射層付基板の製造方法
JP6601245B2 (ja) 2015-03-04 2019-11-06 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法
US10551733B2 (en) * 2015-03-24 2020-02-04 Hoya Corporation Mask blanks, phase shift mask, and method for manufacturing semiconductor device
KR101579852B1 (ko) * 2015-03-25 2015-12-23 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200424750A (en) * 2003-02-03 2004-11-16 Hoya Corp Blank photomask, photomask and method of pattern transferring using photomask
EP2664959A1 (en) * 2012-05-16 2013-11-20 Shin-Etsu Chemical Co., Ltd. Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask
TW201518855A (zh) * 2013-11-15 2015-05-16 S&S Tech Co Ltd 極紫外線微影用空白罩幕以及使用該空白罩幕的光罩
TW201602716A (zh) * 2014-03-18 2016-01-16 Ｈｏｙａ股份有限公司 附阻劑層之基底、其製造方法、光罩基底及壓印用模基底、以及轉印用光罩、壓印用模及彼等之製造方法
WO2016159043A1 (ja) * 2015-03-31 2016-10-06 富士フイルム株式会社 転写フィルム、積層体、静電容量型入力装置および画像表示装置

Also Published As

Publication number Publication date
WO2018074512A1 (ja) 2018-04-26
KR20190059326A (ko) 2019-05-30
JPWO2018074512A1 (ja) 2019-08-29
JP7193344B2 (ja) 2022-12-20
US11187972B2 (en) 2021-11-30
SG11201903409SA (en) 2019-05-30
US20190265585A1 (en) 2019-08-29
TW201827916A (zh) 2018-08-01
KR102631779B1 (ko) 2024-02-01
JP2022009220A (ja) 2022-01-14

Similar Documents

Publication Publication Date Title
TWI764948B (zh) 反射型光罩基底、反射型光罩之製造方法及半導體裝置之製造方法
TWI810176B (zh) 反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法
KR102801276B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
TWI732801B (zh) 遮罩基底用基板、具多層反射膜之基板、反射型遮罩基底及反射型遮罩以及半導體裝置之製造方法
TWI664489B (zh) 反射型光罩基底及其製造方法、反射型光罩及其製造方法、以及半導體裝置之製造方法
TW202004326A (zh) 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法
KR102868783B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
TWI801455B (zh) 反射型光罩基底、反射型光罩及其製造方法、以及半導體裝置之製造方法
KR20190102192A (ko) 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
US20220091498A1 (en) Reflection-type mask blank, reflection-type mask and method for manufacturing same, and method for manufacturing semiconductor device
JP7268211B2 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
TWI781133B (zh) 反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法
TW202223529A (zh) 反射型光罩基底、反射型光罩及半導體裝置之製造方法
TW202235994A (zh) 反射型光罩基底、反射型光罩及半導體裝置之製造方法
TWI833025B (zh) 反射型遮罩基底、反射型遮罩、以及反射型遮罩及半導體裝置之製造方法
JP6440996B2 (ja) 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP2016046370A5 (enExample)
TW202113102A (zh) 反射型遮罩基底、反射型遮罩、以及反射型遮罩及半導體裝置之製造方法