TWI757996B - 微型發光二極體顯示矩陣模組 - Google Patents
微型發光二極體顯示矩陣模組 Download PDFInfo
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Abstract
一種微型發光二極體顯示矩陣模組,包括一多層線路層、多個微型發光二極體以及一絕緣平坦層。多層線路層包括一頂部線路層與包括多個接墊的一底部線路層。微型發光二極體配置於多層線路層的頂部線路層上且定義出多個發光單元。每一發光單元包括彼此分離的三個微型發光二極體。發光單元排列成m行n列的矩陣而定義出多個畫素區域,而接墊的數量為(3m+n)。每一微型發光二極體於底部線路層上的正投影完全重疊於對應的接墊內。絕緣平坦層覆蓋頂部線路層與微型發光二極體。
Description
本發明是有關於一種顯示模組,且特別是有關於一種微型發光二極體顯示矩陣模組。
在現有的技術中,顯示螢幕的拼接是將紅色發光二極體、綠色發光二極體及藍色發光二極體一顆一顆的封裝後,在一顆一顆的打件至驅動電路板上。因此,尺寸與間距均有其限制,且每一棵發光二極體需要兩個接墊,無法有效地減少接墊數量,進而也會影響到接合良率。近年來,亦有微型發光二極體搭配積體電路(Integrated Circuit,IC)的封裝組合,但在厚度與接合上仍耗時且無法修補。
本發明提供一種微型發光二極體顯示矩陣模組,其可有效地減少接墊數量,且具有較佳的表面平坦度,可提高後續接合至顯示電路板時的接合良率。
本發明的微型發光二極體顯示矩陣模組,包括一多層線路層、多個微型發光二極體以及一絕緣平坦層。多層線路層包括一頂部線路層與一底部線路層。底部線路層包括多個接墊。微型發光二極體配置於多層線路層的頂部線路層上且定義出多個發光單元。每一發光單元包括彼此分離的三個微型發光二極體。發光單元排列成m行n列的矩陣而定義出多個畫素區域,而接墊的數量為(3m+n)。每一微型發光二極體於底部線路層上的正投影完全重疊於對應的接墊內。絕緣平坦層覆蓋多層線路層的頂部線路層與微型發光二極體。
在本發明的一實施例中,上述的多層線路層更包括至少一內部線路層以及多個介電層。內部線路層位於頂部線路層與底部線路層之間。介電層位於頂部線路層、內部線路層以及底部線路層之間。
在本發明的一實施例中,上述的頂部線路層的厚度小於內部線路層的厚度以及底部線路層的厚度。
在本發明的一實施例中,上述的內部線路層中的線路圖案密度大於頂部線路層中的線路圖案密度,以及頂部線路層中的線路圖案密度大於底部線路層中的線路圖案密度。
在本發明的一實施例中,上述的多層線路層更包括多個導電通孔,頂部線路層、內部線路層與底部線路層透過導電通孔電性連接。
在本發明的一實施例中,上述的導電通孔於底部線路層上的正投影不重疊於微型發光二極體於底部線路層上的正投影。
在本發明的一實施例中,上述的內部線路層包括多個線路圖案,每一發光單元於底部線路層上的正投影完全重疊於對應的線路圖案內。
在本發明的一實施例中,上述的絕緣平坦層的楊氏係數介於10 GPa至50 GPa。
在本發明的一實施例中,上述的絕緣平坦層的厚度為多層線路層的厚度的至少5倍以上。
在本發明的一實施例中,上述的微型發光二極體顯示矩陣模組還包括一硬質基板,配置於絕緣平坦層上,其中絕緣平坦層位於硬質基板與多層線路層之間。
在本發明的一實施例中,上述的硬質基板的厚度大於絕緣平坦層的厚度。
在本發明的一實施例中,上述的微型發光二極體顯示矩陣模組還包括一絕緣層,配置於底部線路層相反於內部線路層的一側上,且暴露出部分接墊。
在本發明的一實施例中,上述的絕緣層覆蓋接墊的部分頂面。
在本發明的一實施例中,上述的絕緣層的厚度大於底部線路層的厚度。
在本發明的一實施例中,上述的微型發光二極體顯示矩陣模組還包括一表面處理層,配置於絕緣層所暴露出的接墊的部分頂面上。
在本發明的一實施例中,上述的表面處理層的材質包括化鎳浸金(Electroless Nickel and Immersion Gold,ENIG)。
在本發明的一實施例中,上述的微型發光二極體顯示矩陣模組還包括一光阻擋層,配置於多層線路層的頂部線路層上,且包括多個阻擋部,其中阻擋部與發光單元呈交替排列。
在本發明的一實施例中,上述的光阻擋層的厚度大於每一微型發光二極體的厚度。
在本發明的一實施例中,上述的m>2,且n>2。
在本發明的一實施例中,上述的每一發光單元還包括至少一修補微型發光二極體。修補微型發光二極體於底部線路層上的正投影完全重疊於對應的接墊內。
基於上述,在本發明的微型發光二極顯示矩陣模組的設計中,由每三個微型發光二極體所組成的發光單元可排列成m行n列的矩陣而定義出多個畫素區域,且接墊的數量則為(3m+n),其中每一發光單元於底部線路層上的正投影完全重疊於對應的接墊內。藉此,可有效地減少接墊數量,且微型發光二極顯示矩陣模組可具有較佳的表面平坦度,進而可提高後續接合至顯示電路板時的接合良率。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1A是依照本發明的一實施例的一種微型發光二極體顯示矩陣模組的俯視透視示意圖。圖1B是圖1A的微型發光二極體顯示矩陣模組的一畫素區域的放大示意圖。圖1C是圖1A的微型發光二極體顯示矩陣模組的剖面示意圖。為了圖式的清楚起見,圖1A中省略繪示部分圖層及構件。
請同時參考圖1A、圖1B以及圖1C,在本實施例中,微型發光二極體顯示矩陣模組100a包括一多層線路層110、多個微型發光二極體120R、120G、120B以及一絕緣平坦層130。多層線路層110包括一頂部線路層112與一底部線路層114,其中底部線路層114包括彼此分離的多個接墊115。微型發光二極體120R、120G、120B配置於多層線路層110的頂部線路層112上且定義出多個發光單元U,其中每一發光單元U包括彼此分離的三個微型發光二極體120R、120G、120B。此處,每一發光單元U中的三個微型發光二極體120R、120G、120B分別為一紅色微型發光二極體、一綠色微型發光二極體以及一藍色微型發光二極體。特別是,發光單元可排列成m行n列的矩陣而定義出多個畫素區域P,而接墊115的數量為(3m+n),其中m>2,且n>2。如圖1A所示,本實施例的m與n皆為4,因此具有4*4=16個畫素區域P,而接墊115的數量為3*4+4=16個。此外,本實施例每一微型發光二極體120R、120G、120B於底部線路層114上的正投影完全重疊於對應的接墊115內,可具有較佳的平坦度。絕緣平坦層130則覆蓋多層線路層110的頂部線路層112與微型發光二極體120R、120G、120B。
進一步來說,請再參考圖1A與圖1C,本實施例的多層線路層110還包括至少一內部線路層(示意地繪示一層內部線路層116)以及多個介電層(示意地繪示二層介電層118)。內部線路層116位於頂部線路層112與底部線路層114之間,而介電層118位於頂部線路層112、內部線路層116以及底部線路層114之間。也就是說,頂部線路層112、內部線路層116以及底部線路層114透過介電層118來電性隔離。頂部線路層112的厚度H1小於內部線路層116的厚度H3以及底部線路層114的厚度H2。較佳地,頂部線路層112的厚度H1為內部線路層116的厚度H3的1/2,或者是,頂部線路層112的厚度H1為底部線路層114的厚度H2的1/2。
特別是,本實施例的頂部線路層112以及內部線路層116在每一層別中所佔的線路圖案密度至少大於50%,較佳可達80%,可令每一層別的平坦度更平,利於後續微型發光二極體120R、120G、120B的覆晶接合製程、提高良率。另外考量製程限制,例如曝光/蝕刻的線寬、或各層間寄生電容的產生等等,線路圖案的密度不大於90%為佳。較佳地,內部線路層116中的線路圖案密度大於頂部線路層112中的線路圖案密度,且頂部線路層112中的線路圖案密度大於底部線路層114中的線路圖案密度。
請參考圖1C,本實施例的多層線路層110還包括多個導電通孔119,其中頂部線路層112、內部線路層116與底部線路層114透過導電通孔119電性連接。意即,頂部線路層112與內部線路層116是透過導電通孔119電性連接,而內部線路層116與底部線路層114也是透過導電通孔119電性連接。圖1C僅繪示一個剖面,僅可看到頂部線路層112與內部線路層116是透過導電通孔119電性連接。於另一未繪示的剖面中,內部線路層116與底部線路層114也是透過導電通孔119電性連接。特別是,導電通孔119於底部線路層114上的正投影不重疊於微型發光二極體120R、120G、120B於底部線路層114上的正投影。也就是說,以俯視觀之,微型發光二極體120R、120G、120B的位置與導電通孔119的位置完全不重疊。更進一步來說,本實施例的內部線路層116包括多條線路圖案117,其中每一發光單元U於底部線路層114上的正投影也完全重疊於對應的線路圖案117內。此處,每一微型發光二極體120R、120G、120B於底部線路層114上的正投影完全地重疊於對應的線路圖案117內。
再者,本實施例的絕緣平坦層130具有高可見光透光度,高楊氏係數。詳細來說,絕緣平坦層130例如可見光透光度大於90%,而楊氏係數介於10GPa至50GPa,較佳地,楊氏係數大於30GPa。絕緣平坦層130的材質如是UV硬化型的丙烯酸系樹脂(Acrylate Resin)、聚甲基戊烯(poly methyl pentene)(PMP)。較佳地,絕緣平坦層130的厚度T2為多層線路層110的厚度T1的至少5倍以上。舉例來說,絕緣平坦層130的厚度T2例如是100~150微米,而多層線路層110的厚度T1例如是20微米至30微米。由於本實施例的絕緣平坦層130屬於硬質材料,因此後續可讓微型發光二極體顯示矩陣模組100a被轉移設備,如SMT設備,拾取與接合。
此外,請再參考圖1C,本實施例的微型發光二極體顯示矩陣模組100a還包括一絕緣層140,其中絕緣層140配置於底部線路層114相反於內部線路層116的一側上,且暴露出部分接墊115。進一步來說,絕緣層140是覆蓋每一接墊115的周圍表面及部分頂面,且暴露出接墊115的中間部分。此處,絕緣層140的厚度H大於底部線路層114的厚度H2。舉例來說,絕緣層140的厚度H例如是10微米至15微米,但不以此為限。
另外,本實施例的微型發光二極體顯示矩陣模組100a還包括一表面處理層150,其中表面處理層150配置於絕緣層140所暴露出的接墊115的部分頂面上。較佳地,表面處理層150的材質例如是化鎳浸金(Electroless Nickel and Immersion Gold,ENIG),可有效地避免或減少被絕緣層140所暴露出的接墊115產生氧化現象。
為了有效地降低報廢數量,本實施例於每一畫素區域P中還預留了至少一修補微型發光二極體120P的修補位置(圖1B中示意地繪示三個修補位置)。修補微型發光二極體120P彼此分離且其電性連接方式分別與微型發光二極體120R、120G、120B相同,藉此來取代有瑕疵或受損的微型發光二極體120R、120G、120B。此處,修補微型發光二極體120P於底部線路層114上的正投影完全重疊於對應的接墊115內。換言之,在微型發光二極體120R、120G、120B無瑕疵或無受損時,不會放置修補微型發光二極體120P,而當在微型發光二極體120R、120G、120B有瑕疵或有受損時,才會放置修補微型發光二極體120P,藉此來取代微型發光二極體120R、120G、120B,可降低及減少微型發光二極體顯示矩陣模組100a的報廢數量。
簡言之,本實施例由每三個微型發光二極體120R、120G、120B所組成的發光單元U可排列成m行n列的矩陣,而定義出畫素區域P,且接墊115的數量則為(3m+n)。相較於現有技術中每一微型發光二極體需要搭配二個接墊而言,本實施例在4*4個畫素區域P中,有48顆微型發光二極體120R、120G、120B,但是只需要16個接墊115。透過多層線路層110的線路轉層設計,可讓接墊115尺寸更大且排列更整齊。因此,上述的設計可有效地減少接墊115的數量,可使微型發光二極體顯示矩陣模組100a後續設置於顯示電路板(未繪示)時改善對準精度而具有較高的良率。再者,本實施例的微型發光二極體顯示矩陣模組100a不限於主動式驅動或被動式來驅動,具有較佳的使用靈活度。此外,本實施例由每三個微型發光二極體120R、120G、120B所組成的發光單元U於底部線路層114上的正投影完全重疊於對應的接墊115內,可使得微型發光二極體顯示矩陣模組100a具有較佳的平坦度,有利於微型發光二極體120R、120G、120B巨量轉移及可提升接合良率。
在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,下述實施例不再重複贅述。
圖2是依照本發明的另一實施例的一種微型發光二極體顯示矩陣模組的剖面示意圖。請同時參考圖1C與圖2,本實施例的微型發光二極體顯示矩陣模組100b與圖1C的微型發光二極體顯示矩陣模組100a相似,兩者的差異在於:在本實施例中,微型發光二極體顯示矩陣模組100b還包括一硬質基板160,配置於絕緣平坦層130上,其中絕緣平坦層130位於硬質基板160與多層線路層110之間。較佳地,硬質基板160的厚度T3大於絕緣平坦層130的厚度T2。舉例來說,硬質基板16的厚度T3例如是250微米,而絕緣平坦層130的厚度T2例如是80微米。本實施例中,絕緣平坦層130是高透明度的封裝膠體,例如b-stage的矽膠、環氧樹脂,楊氏係數介於0.01GPa至2GPa。
此外,本實施例的還包括一光阻擋層170,配置於多層線路層110的頂部線路層112上,且包括多個阻擋部172,其中阻擋部172與發光單元U呈交替排列。較佳地,光阻擋層170的厚度T4大於每一微型發光二極體120的厚度T5。舉例來說,微型發光二極體120的厚度T5例如是小於10微米,而光阻擋層170的厚度T4例如是15~30微米。
簡言之,由於本實施例的微型發光二極體顯示矩陣模組100b包括硬質基板160,因此可讓微型發光二極體顯示矩陣模組100b被轉移設備,如SMT設備,拾取與接合,具有較佳的結構強度。此外,本實施例的微型發光二極體顯示矩陣模組100b還包括光阻擋層170,阻擋金屬線路的反射、發光單元U之間的亮度干擾,而使微型發光二極體顯示矩陣模組100b具有較佳的顯示效果。
圖3是依照本發明的另一實施例的一種微型發光二極體顯示矩陣模組的俯視示意圖。為了方便說明起見,圖3省略繪示部分構件。請同時參考圖1A與圖3,本實施例的微型發光二極體顯示矩陣模組100c與圖1A的微型發光二極體顯示矩陣模組100a相似,兩者的差異在於:本實施例的發光單元U可排列成m行n列的矩陣,其中m=5,且n=5。意即,本實施例為5*5=25個畫素區域P,而底部線路層114c的接墊115c1、115c2的數量為3*5+5=20個。如圖3所示,本實施例的接墊115c2的尺寸大於接墊115c1的尺寸,而接墊115c2橫跨兩畫素區域P,其中位於此兩畫素區域P中的兩發光單元U於底部線路層114c上的正投影完全重疊於接墊115c2。
綜上所述,在本發明的微型發光二極顯示矩陣模組的設計中,由每三個微型發光二極體所組成的發光單元可排列成m行n列的矩陣而定義出多個畫素區域,且接墊的數量則為(3m+n),其中每一發光單元於底部線路層上的正投影完全重疊於對應的接墊內。藉此,可有效地減少接墊數量,且微型發光二極顯示矩陣模組可具有較佳的表面平坦度,進而可提高後續接合至顯示電路板時的接合良率。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100a、100b、100c:微型發光二極體顯示矩陣模組
110:多層線路層
112:頂部線路層
114、114c:底部線路層
115、115c1、115c2:接墊
116:內部線路層
117:線路圖案
118:介電層
119:導電通孔
120R、120G、120B:微型發光二極體
120P:修補微型發光二極體
130:絕緣平坦層
140:絕緣層
150:表面處理層
160:硬質基板
170:光阻擋層
172:阻擋部
H、H1、H2、H3:厚度
P:畫素區域
T1、T2、T3、T4、T5:厚度
U:發光單元
圖1A是依照本發明的一實施例的一種微型發光二極體顯示矩陣模組的俯視透視示意圖。
圖1B是圖1A的微型發光二極體顯示矩陣模組的一畫素區域的放大示意圖。
圖1C是圖1A的微型發光二極體顯示矩陣模組的剖面示意圖。
圖2是依照本發明的另一實施例的一種微型發光二極體顯示矩陣模組的剖面示意圖。
圖3是依照本發明的另一實施例的一種微型發光二極體顯示矩陣模組的俯視示意圖。
100a:微型發光二極體顯示矩陣模組
110:多層線路層
112:頂部線路層
114:底部線路層
115:接墊
116:內部線路層
117:線路圖案
118:介電層
119:導電通孔
120R、120G、120B:微型發光二極體
130:絕緣平坦層
140:絕緣層
150:表面處理層
H、H1、H2、H3:厚度
T1、T2:厚度
U:發光單元
Claims (20)
- 一種微型發光二極體顯示矩陣模組,包括: 一多層線路層,包括一頂部線路層與一底部線路層,其中該底部線路層包括多個接墊; 多個微型發光二極體,配置於該多層線路層的該頂部線路層上,且定義出多個發光單元,其中各該發光單元包括彼此分離的三個該些微型發光二極體,該些發光單元排列成m行n列的矩陣而定義出多個畫素區域,其中該些接墊的數量為(3m+n),且各該微型發光二極體於該底部線路層上的正投影完全重疊於對應的該接墊內;以及 一絕緣平坦層,覆蓋該多層線路層的該頂部線路層與該些微型發光二極體。
- 如請求項1所述的微型發光二極體顯示矩陣模組,其中該多層線路層更包括至少一內部線路層以及多個介電層,該至少一內部線路層位於該頂部線路層與該底部線路層之間,而該些介電層位於該頂部線路層、該至少一內部線路層以及該底部線路層之間。
- 如請求項2所述的微型發光二極體顯示矩陣模組,其中該頂部線路層的厚度小於該至少一內部線路層的厚度以及該底部線路層的厚度。
- 如請求項2所述的微型發光二極體顯示矩陣模組,其中該至少一內部線路層中的線路圖案密度大於該頂部線路層中的線路圖案密度,以及該頂部線路層中的線路圖案密度大於該底部線路層中的線路圖案密度。
- 如請求項2所述的微型發光二極體顯示矩陣模組,其中該多層線路層更包括多個導電通孔,該頂部線路層、該至少一內部線路層與該底部線路層透過該些導電通孔電性連接。
- 如請求項5所述的微型發光二極體顯示矩陣模組,其中該些導電通孔於該底部線路層上的正投影不重疊於該些微型發光二極體於該底部線路層上的正投影。
- 如請求項2所述的微型發光二極體顯示矩陣模組,其中該至少一內部線路層包括多個線路圖案,各該發光單元於該底部線路層上的正投影完全重疊於對應的該些線路圖案內。
- 如請求項1所述的微型發光二極體顯示矩陣模組,其中該絕緣平坦層的楊氏係數介於10GPa至50GPa。
- 如請求項1所述的微型發光二極體顯示矩陣模組,其中該絕緣平坦層的厚度為該多層線路層的厚度的至少5倍以上。
- 如請求項1所述的微型發光二極體顯示矩陣模組,更包括: 一硬質基板,配置於該絕緣平坦層上,其中該絕緣平坦層位於該硬質基板與該多層線路層之間。
- 如請求項10所述的微型發光二極體顯示矩陣模組,其中該硬質基板的厚度大於該絕緣平坦層的厚度。
- 如請求項1所述的微型發光二極體顯示矩陣模組,更包括: 一絕緣層,配置於該底部線路層相反於該至少一內部線路層的一側上,且暴露出部分該些接墊。
- 如請求項12所述的微型發光二極體顯示矩陣模組,其中該絕緣層覆蓋該些接墊的部分頂面。
- 如請求項12所述的微型發光二極體顯示矩陣模組,其中該絕緣層的厚度大於該底部線路層的厚度。
- 如請求項13所述的微型發光二極體顯示矩陣模組,更包括: 一表面處理層,配置於該絕緣層所暴露出的該些接墊的部分頂面上。
- 如請求項15所述的微型發光二極體顯示矩陣模組,其中該表面處理層的材質包括化鎳浸金。
- 如請求項1所述的微型發光二極體顯示矩陣模組,更包括: 一光阻擋層,配置於該多層線路層的該頂部線路層上,且包括多個阻擋部,其中該些阻擋部與該些發光單元呈交替排列。
- 如請求項17所述的微型發光二極體顯示矩陣模組,其中該光阻擋層的厚度大於各該微型發光二極體的厚度。
- 如請求項1所述的微型發光二極體顯示矩陣模組,其中m>2,且n>2。
- 如請求項1所述的微型發光二極體顯示矩陣模組,其中各該發光單元還包括至少一修補微型發光二極體,且該至少一修補微型發光二極體於該底部線路層上的正投影完全重疊於對應的該接墊內。
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