TWI757223B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

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Publication number
TWI757223B
TWI757223B TW110138426A TW110138426A TWI757223B TW I757223 B TWI757223 B TW I757223B TW 110138426 A TW110138426 A TW 110138426A TW 110138426 A TW110138426 A TW 110138426A TW I757223 B TWI757223 B TW I757223B
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TW
Taiwan
Prior art keywords
oxide semiconductor
film
semiconductor film
transistor
oxide
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TW110138426A
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English (en)
Chinese (zh)
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TW202207435A (zh
Inventor
山崎舜平
岡崎健一
片山雅博
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日商半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Vehicle Body Suspensions (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
TW110138426A 2013-12-02 2014-11-28 顯示裝置 TWI757223B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2013-249692 2013-12-02
JP2013249692 2013-12-02
JP2013-249693 2013-12-03
JP2013249694 2013-12-03
JP2013-249694 2013-12-03
JP2013249693 2013-12-03

Publications (2)

Publication Number Publication Date
TW202207435A TW202207435A (zh) 2022-02-16
TWI757223B true TWI757223B (zh) 2022-03-01

Family

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Family Applications (7)

Application Number Title Priority Date Filing Date
TW110138426A TWI757223B (zh) 2013-12-02 2014-11-28 顯示裝置
TW109121498A TWI721916B (zh) 2013-12-02 2014-11-28 顯示裝置
TW108110127A TWI688084B (zh) 2013-12-02 2014-11-28 顯示裝置
TW103141396A TWI661542B (zh) 2013-12-02 2014-11-28 顯示裝置
TW109103572A TWI698988B (zh) 2013-12-02 2014-11-28 顯示裝置
TW111105859A TWI774636B (zh) 2013-12-02 2014-11-28 顯示裝置
TW110106252A TWI745242B (zh) 2013-12-02 2014-11-28 顯示裝置

Family Applications After (6)

Application Number Title Priority Date Filing Date
TW109121498A TWI721916B (zh) 2013-12-02 2014-11-28 顯示裝置
TW108110127A TWI688084B (zh) 2013-12-02 2014-11-28 顯示裝置
TW103141396A TWI661542B (zh) 2013-12-02 2014-11-28 顯示裝置
TW109103572A TWI698988B (zh) 2013-12-02 2014-11-28 顯示裝置
TW111105859A TWI774636B (zh) 2013-12-02 2014-11-28 顯示裝置
TW110106252A TWI745242B (zh) 2013-12-02 2014-11-28 顯示裝置

Country Status (7)

Country Link
US (1) US9825057B2 (enExample)
JP (8) JP6393167B2 (enExample)
KR (5) KR102220450B1 (enExample)
CN (2) CN105874524B (enExample)
DE (1) DE112014005486B4 (enExample)
TW (7) TWI757223B (enExample)
WO (1) WO2015083034A1 (enExample)

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US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI666770B (zh) 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
US9472678B2 (en) 2013-12-27 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN114326211B (zh) * 2015-02-12 2025-03-28 株式会社半导体能源研究所 显示装置
US20160260392A1 (en) * 2015-03-03 2016-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and program
US10008167B2 (en) * 2015-03-03 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and program
WO2017006203A1 (ja) * 2015-07-03 2017-01-12 株式会社半導体エネルギー研究所 液晶表示装置および電子機器
JP6754763B2 (ja) * 2015-07-03 2020-09-16 株式会社半導体エネルギー研究所 液晶表示装置
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
CN114068724A (zh) 2016-01-29 2022-02-18 株式会社半导体能源研究所 半导体装置以及晶体管
KR102655935B1 (ko) * 2016-02-12 2024-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 포함하는 표시 장치
US10141387B2 (en) * 2016-04-08 2018-11-27 Innolux Corporation Display device
CN109075206B (zh) 2016-04-13 2022-08-16 株式会社半导体能源研究所 半导体装置及包括该半导体装置的显示装置
US10205008B2 (en) * 2016-08-03 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI875538B (zh) * 2016-08-29 2025-03-01 日商半導體能源研究所股份有限公司 顯示裝置及控制程式
CN115857237A (zh) * 2016-09-12 2023-03-28 株式会社半导体能源研究所 显示装置及电子设备
WO2018073689A1 (en) * 2016-10-21 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10741690B2 (en) 2017-02-16 2020-08-11 Mitsubishi Electric Corporation Thin film transistor, thin film transistor substrate, and liquid crystal display device
WO2018168639A1 (ja) * 2017-03-14 2018-09-20 シャープ株式会社 半導体装置およびその製造方法
JP2018195632A (ja) * 2017-05-15 2018-12-06 株式会社ジャパンディスプレイ 半導体装置および表示装置
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN108010917A (zh) * 2017-11-02 2018-05-08 中华映管股份有限公司 有源器件阵列基板及其制作方法
JP2019114751A (ja) * 2017-12-26 2019-07-11 シャープ株式会社 薄膜トランジスタ基板及びそれを備えた液晶表示装置並びに薄膜トランジスタ基板の製造方法
JP7051446B2 (ja) * 2018-01-10 2022-04-11 株式会社ジャパンディスプレイ 表示装置の製造方法
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
CN209000913U (zh) * 2018-11-06 2019-06-18 惠科股份有限公司 一种显示面板和显示装置
JP7190740B2 (ja) 2019-02-22 2022-12-16 三国電子有限会社 エレクトロルミネセンス素子を有する表示装置
CN116864510A (zh) * 2019-03-19 2023-10-10 群创光电股份有限公司 具有晶体管元件的工作模块
TWI812358B (zh) * 2020-01-22 2023-08-11 台灣愛司帝科技股份有限公司 顯示模組及其影像顯示器
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
CN111312772B (zh) * 2020-02-25 2022-10-25 京东方科技集团股份有限公司 Oled显示基板及其制作方法、显示装置
CN112768470B (zh) * 2020-12-30 2025-02-28 厦门天马微电子有限公司 一种显示面板及显示装置
CN114188354B (zh) 2021-12-02 2023-11-28 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法和显示面板
KR20250127901A (ko) 2024-02-20 2025-08-27 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 표시 장치

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