JP6393167B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP6393167B2
JP6393167B2 JP2014239231A JP2014239231A JP6393167B2 JP 6393167 B2 JP6393167 B2 JP 6393167B2 JP 2014239231 A JP2014239231 A JP 2014239231A JP 2014239231 A JP2014239231 A JP 2014239231A JP 6393167 B2 JP6393167 B2 JP 6393167B2
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Japan
Prior art keywords
oxide semiconductor
film
semiconductor film
transistor
insulating film
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JP2014239231A
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English (en)
Japanese (ja)
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JP2015130487A5 (enExample
JP2015130487A (ja
Inventor
山崎　舜平
舜平 山崎
岡崎　健一
健一 岡崎
片山　雅博
雅博 片山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014239231A priority Critical patent/JP6393167B2/ja
Publication of JP2015130487A publication Critical patent/JP2015130487A/ja
Publication of JP2015130487A5 publication Critical patent/JP2015130487A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Nonlinear Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Vehicle Body Suspensions (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
JP2014239231A 2013-12-02 2014-11-26 表示装置 Active JP6393167B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014239231A JP6393167B2 (ja) 2013-12-02 2014-11-26 表示装置

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2013249692 2013-12-02
JP2013249692 2013-12-02
JP2013249694 2013-12-03
JP2013249693 2013-12-03
JP2013249693 2013-12-03
JP2013249694 2013-12-03
JP2014239231A JP6393167B2 (ja) 2013-12-02 2014-11-26 表示装置

Related Child Applications (1)

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JP2018157333A Division JP6559858B2 (ja) 2013-12-02 2018-08-24 表示装置

Publications (3)

Publication Number Publication Date
JP2015130487A JP2015130487A (ja) 2015-07-16
JP2015130487A5 JP2015130487A5 (enExample) 2017-12-28
JP6393167B2 true JP6393167B2 (ja) 2018-09-19

Family

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Family Applications (7)

Application Number Title Priority Date Filing Date
JP2014239231A Active JP6393167B2 (ja) 2013-12-02 2014-11-26 表示装置
JP2018157333A Active JP6559858B2 (ja) 2013-12-02 2018-08-24 表示装置
JP2019131659A Active JP6765481B2 (ja) 2013-12-02 2019-07-17 表示装置
JP2020154314A Active JP7030919B2 (ja) 2013-12-02 2020-09-15 表示装置
JP2022025755A Active JP7289948B2 (ja) 2013-12-02 2022-02-22 液晶表示装置
JP2023089929A Withdrawn JP2023115023A (ja) 2013-12-02 2023-05-31 液晶表示装置
JP2025023974A Active JP7747922B2 (ja) 2013-12-02 2025-02-18 表示装置

Family Applications After (6)

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JP2018157333A Active JP6559858B2 (ja) 2013-12-02 2018-08-24 表示装置
JP2019131659A Active JP6765481B2 (ja) 2013-12-02 2019-07-17 表示装置
JP2020154314A Active JP7030919B2 (ja) 2013-12-02 2020-09-15 表示装置
JP2022025755A Active JP7289948B2 (ja) 2013-12-02 2022-02-22 液晶表示装置
JP2023089929A Withdrawn JP2023115023A (ja) 2013-12-02 2023-05-31 液晶表示装置
JP2025023974A Active JP7747922B2 (ja) 2013-12-02 2025-02-18 表示装置

Country Status (7)

Country Link
US (1) US9825057B2 (enExample)
JP (7) JP6393167B2 (enExample)
KR (5) KR102220450B1 (enExample)
CN (2) CN105874524B (enExample)
DE (1) DE112014005486B4 (enExample)
TW (7) TWI721916B (enExample)
WO (1) WO2015083034A1 (enExample)

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US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI721409B (zh) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6488124B2 (ja) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
CN113341624A (zh) 2015-02-12 2021-09-03 株式会社半导体能源研究所 显示装置
US10008167B2 (en) * 2015-03-03 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and program
US20160260392A1 (en) * 2015-03-03 2016-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and program
JP6754763B2 (ja) * 2015-07-03 2020-09-16 株式会社半導体エネルギー研究所 液晶表示装置
WO2017006203A1 (ja) * 2015-07-03 2017-01-12 株式会社半導体エネルギー研究所 液晶表示装置および電子機器
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
WO2017130073A1 (ja) * 2016-01-29 2017-08-03 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有する表示装置
US10141387B2 (en) * 2016-04-08 2018-11-27 Innolux Corporation Display device
WO2017178912A1 (en) 2016-04-13 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US10205008B2 (en) * 2016-08-03 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI840104B (zh) * 2016-08-29 2024-04-21 日商半導體能源研究所股份有限公司 顯示裝置及控制程式
CN109643735B (zh) * 2016-09-12 2022-12-16 株式会社半导体能源研究所 显示装置及电子设备
KR102384624B1 (ko) * 2016-10-21 2022-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2018150620A1 (ja) 2017-02-16 2018-08-23 三菱電機株式会社 薄膜トランジスタ、薄膜トランジスタ基板、液晶表示装置、及び、薄膜トランジスタ基板の製造方法
WO2018168639A1 (ja) * 2017-03-14 2018-09-20 シャープ株式会社 半導体装置およびその製造方法
JP2018195632A (ja) * 2017-05-15 2018-12-06 株式会社ジャパンディスプレイ 半導体装置および表示装置
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN108010917A (zh) * 2017-11-02 2018-05-08 中华映管股份有限公司 有源器件阵列基板及其制作方法
JP2019114751A (ja) * 2017-12-26 2019-07-11 シャープ株式会社 薄膜トランジスタ基板及びそれを備えた液晶表示装置並びに薄膜トランジスタ基板の製造方法
JP7051446B2 (ja) * 2018-01-10 2022-04-11 株式会社ジャパンディスプレイ 表示装置の製造方法
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
CN209000913U (zh) * 2018-11-06 2019-06-18 惠科股份有限公司 一种显示面板和显示装置
JP7190740B2 (ja) 2019-02-22 2022-12-16 三国電子有限会社 エレクトロルミネセンス素子を有する表示装置
CN111725238B (zh) * 2019-03-19 2023-08-15 群创光电股份有限公司 具有晶体管元件的工作模块
TWM611365U (zh) * 2020-01-22 2021-05-01 台灣愛司帝科技股份有限公司 顯示模組及其影像顯示器
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
CN111312772B (zh) * 2020-02-25 2022-10-25 京东方科技集团股份有限公司 Oled显示基板及其制作方法、显示装置
CN112768470B (zh) * 2020-12-30 2025-02-28 厦门天马微电子有限公司 一种显示面板及显示装置
CN114188354B (zh) * 2021-12-02 2023-11-28 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法和显示面板
KR20250127901A (ko) 2024-02-20 2025-08-27 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 표시 장치

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JP7289948B2 (ja) 2023-06-12
KR20220047897A (ko) 2022-04-19
KR20230010833A (ko) 2023-01-19
KR20160093659A (ko) 2016-08-08
CN105874524A (zh) 2016-08-17
TWI745242B (zh) 2021-11-01
TWI661542B (zh) 2019-06-01
JP2018198328A (ja) 2018-12-13
JP7030919B2 (ja) 2022-03-07
TW202139440A (zh) 2021-10-16
TWI698988B (zh) 2020-07-11
KR20210072135A (ko) 2021-06-16
KR102220450B1 (ko) 2021-02-25
US20150153599A1 (en) 2015-06-04
JP2022066258A (ja) 2022-04-28
TW202025464A (zh) 2020-07-01
CN110265482B (zh) 2023-08-08
TW201926654A (zh) 2019-07-01
WO2015083034A1 (en) 2015-06-11
KR102705567B1 (ko) 2024-09-12
TW202207435A (zh) 2022-02-16
DE112014005486T5 (de) 2016-08-18
TW202107690A (zh) 2021-02-16
JP2019208044A (ja) 2019-12-05
JP2025074089A (ja) 2025-05-13
JP6765481B2 (ja) 2020-10-07
CN110265482A (zh) 2019-09-20
US9825057B2 (en) 2017-11-21
KR20210021614A (ko) 2021-02-26
DE112014005486B4 (de) 2024-08-22
JP2015130487A (ja) 2015-07-16
CN105874524B (zh) 2019-05-28
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