TWI684393B - 連接方法及接合體 - Google Patents
連接方法及接合體 Download PDFInfo
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- TWI684393B TWI684393B TW104100297A TW104100297A TWI684393B TW I684393 B TWI684393 B TW I684393B TW 104100297 A TW104100297 A TW 104100297A TW 104100297 A TW104100297 A TW 104100297A TW I684393 B TWI684393 B TW I684393B
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- ceramic substrate
- anisotropic conductive
- conductive film
- terminal
- electronic component
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29444—Gold [Au] as principal constituent
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/29001—Core members of the layer connector
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
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- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15158—Shape the die mounting substrate being other than a cuboid
- H01L2924/15159—Side view
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Applications Claiming Priority (2)
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JPJP2014-001704 | 2014-01-08 | ||
JP2014001704A JP6425382B2 (ja) | 2014-01-08 | 2014-01-08 | 接続方法、及び接合体 |
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TW201536142A TW201536142A (zh) | 2015-09-16 |
TWI684393B true TWI684393B (zh) | 2020-02-01 |
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JP (1) | JP6425382B2 (ko) |
KR (1) | KR102275926B1 (ko) |
CN (2) | CN109994392B (ko) |
TW (1) | TWI684393B (ko) |
WO (1) | WO2015105098A1 (ko) |
Families Citing this family (3)
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KR102601787B1 (ko) | 2019-03-08 | 2023-11-13 | 데쿠세리아루즈 가부시키가이샤 | 접속 구조체의 제조 방법, 및 접속 구조체, 그리고 필름 구조체, 및 필름 구조체의 제조 방법 |
KR20230157536A (ko) | 2019-03-08 | 2023-11-16 | 데쿠세리아루즈 가부시키가이샤 | 접속 구조체의 제조 방법, 및 접속 구조체, 그리고 필름 구조체, 및 필름 구조체의 제조 방법 |
Family Cites Families (19)
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JP2750473B2 (ja) * | 1990-10-02 | 1998-05-13 | イビデン株式会社 | 電子部品搭載用基板 |
JPH11186727A (ja) * | 1997-12-22 | 1999-07-09 | Kyocera Corp | 配線基板およびその製造方法 |
DE69830623T2 (de) * | 1998-08-13 | 2006-05-04 | Hitachi Chemical Co., Ltd. | Klebstoff zum verbinden von schaltelementen, leiterplatte und verfahren zur herstellung derselben |
CN1310835A (zh) * | 1999-05-31 | 2001-08-29 | 西铁城钟表公司 | 电气连接结构和平面显示装置 |
JP4535411B2 (ja) | 2000-06-30 | 2010-09-01 | 日東電工株式会社 | アクリル系熱硬化型接着剤および接着シート類 |
JP3886707B2 (ja) * | 2000-08-09 | 2007-02-28 | 京セラ株式会社 | セラミックス基板の製造方法 |
JP2002146325A (ja) | 2000-11-16 | 2002-05-22 | Hitachi Chem Co Ltd | 接着剤組成物とそれを用いた接着部材と半導体搭載用基板と半導体装置 |
JP2003238925A (ja) | 2002-02-19 | 2003-08-27 | Hitachi Chem Co Ltd | 接着剤組成物、接着フィルム |
JP4697600B2 (ja) * | 2006-06-01 | 2011-06-08 | Tdk株式会社 | 複合配線基板の製造方法 |
CN101542721A (zh) * | 2007-01-26 | 2009-09-23 | 日立化成工业株式会社 | 密封用膜及使用其的半导体装置 |
JP5043621B2 (ja) * | 2007-03-27 | 2012-10-10 | 富士フイルム株式会社 | 異方導電性部材およびその製造方法 |
CN101724361B (zh) * | 2008-12-30 | 2011-12-07 | 四川虹欧显示器件有限公司 | 各向异性导电胶和导电膜以及电连接方法 |
JP5668636B2 (ja) * | 2010-08-24 | 2015-02-12 | 日立化成株式会社 | 回路接続構造体の製造方法 |
WO2012073739A1 (ja) * | 2010-11-29 | 2012-06-07 | シャープ株式会社 | 基板モジュール |
JP5643623B2 (ja) | 2010-12-02 | 2014-12-17 | デクセリアルズ株式会社 | 異方性導電材料及びその製造方法 |
JP5703061B2 (ja) * | 2011-02-23 | 2015-04-15 | 積水化学工業株式会社 | 接続構造体の製造方法 |
JP6099297B2 (ja) * | 2011-03-29 | 2017-03-22 | 株式会社アドマテックス | 無機粉体混合物及びフィラー含有組成物 |
JP5982380B2 (ja) * | 2011-08-19 | 2016-08-31 | 富士フイルム株式会社 | 撮像素子モジュール及びその製造方法 |
JP5678950B2 (ja) * | 2012-01-06 | 2015-03-04 | Tdk株式会社 | ガラスセラミックス焼結体及び配線基板 |
-
2014
- 2014-01-08 JP JP2014001704A patent/JP6425382B2/ja active Active
-
2015
- 2015-01-06 TW TW104100297A patent/TWI684393B/zh active
- 2015-01-06 CN CN201910412779.0A patent/CN109994392B/zh active Active
- 2015-01-06 KR KR1020167021411A patent/KR102275926B1/ko active IP Right Grant
- 2015-01-06 CN CN201580003741.8A patent/CN106063391B/zh active Active
- 2015-01-06 WO PCT/JP2015/050140 patent/WO2015105098A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2015130426A (ja) | 2015-07-16 |
WO2015105098A1 (ja) | 2015-07-16 |
CN106063391A (zh) | 2016-10-26 |
JP6425382B2 (ja) | 2018-11-21 |
TW201536142A (zh) | 2015-09-16 |
CN109994392A (zh) | 2019-07-09 |
CN106063391B (zh) | 2019-06-18 |
KR20160106134A (ko) | 2016-09-09 |
CN109994392B (zh) | 2023-04-07 |
KR102275926B1 (ko) | 2021-07-12 |
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