JP6425382B2 - 接続方法、及び接合体 - Google Patents
接続方法、及び接合体 Download PDFInfo
- Publication number
- JP6425382B2 JP6425382B2 JP2014001704A JP2014001704A JP6425382B2 JP 6425382 B2 JP6425382 B2 JP 6425382B2 JP 2014001704 A JP2014001704 A JP 2014001704A JP 2014001704 A JP2014001704 A JP 2014001704A JP 6425382 B2 JP6425382 B2 JP 6425382B2
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- ceramic substrate
- terminal
- anisotropic conductive
- conductive film
- height variation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
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- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15158—Shape the die mounting substrate being other than a cuboid
- H01L2924/15159—Side view
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Priority Applications (6)
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JP2014001704A JP6425382B2 (ja) | 2014-01-08 | 2014-01-08 | 接続方法、及び接合体 |
CN201580003741.8A CN106063391B (zh) | 2014-01-08 | 2015-01-06 | 连接方法及接合体 |
PCT/JP2015/050140 WO2015105098A1 (ja) | 2014-01-08 | 2015-01-06 | 接続方法、及び接合体 |
TW104100297A TWI684393B (zh) | 2014-01-08 | 2015-01-06 | 連接方法及接合體 |
CN201910412779.0A CN109994392B (zh) | 2014-01-08 | 2015-01-06 | 连接方法及接合体 |
KR1020167021411A KR102275926B1 (ko) | 2014-01-08 | 2015-01-06 | 접속 방법 및 접합체 |
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JP2014001704A JP6425382B2 (ja) | 2014-01-08 | 2014-01-08 | 接続方法、及び接合体 |
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US20220181369A1 (en) | 2019-03-08 | 2022-06-09 | Dexerials Corporation | Method of manufacturing connection structure, connection structure, film structure, and method of manufacturing film structure |
KR102601787B1 (ko) | 2019-03-08 | 2023-11-13 | 데쿠세리아루즈 가부시키가이샤 | 접속 구조체의 제조 방법, 및 접속 구조체, 그리고 필름 구조체, 및 필름 구조체의 제조 방법 |
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JP2750473B2 (ja) * | 1990-10-02 | 1998-05-13 | イビデン株式会社 | 電子部品搭載用基板 |
JPH11186727A (ja) * | 1997-12-22 | 1999-07-09 | Kyocera Corp | 配線基板およびその製造方法 |
KR100388770B1 (ko) * | 1998-08-13 | 2003-06-25 | 히다치 가세고교 가부시끼가이샤 | 회로 부재 접속용 접착제 및 회로판 및 그의 제조 방법 |
WO2000074023A1 (en) * | 1999-05-31 | 2000-12-07 | Citizen Watch Co., Ltd. | Electrical connection structure and flat display device |
JP4535411B2 (ja) | 2000-06-30 | 2010-09-01 | 日東電工株式会社 | アクリル系熱硬化型接着剤および接着シート類 |
JP3886707B2 (ja) * | 2000-08-09 | 2007-02-28 | 京セラ株式会社 | セラミックス基板の製造方法 |
JP2002146325A (ja) | 2000-11-16 | 2002-05-22 | Hitachi Chem Co Ltd | 接着剤組成物とそれを用いた接着部材と半導体搭載用基板と半導体装置 |
JP2003238925A (ja) | 2002-02-19 | 2003-08-27 | Hitachi Chem Co Ltd | 接着剤組成物、接着フィルム |
JP4697600B2 (ja) * | 2006-06-01 | 2011-06-08 | Tdk株式会社 | 複合配線基板の製造方法 |
CN101542721A (zh) * | 2007-01-26 | 2009-09-23 | 日立化成工业株式会社 | 密封用膜及使用其的半导体装置 |
JP5043617B2 (ja) * | 2007-03-27 | 2012-10-10 | 富士フイルム株式会社 | 異方導電性部材およびその製造方法 |
CN101724361B (zh) * | 2008-12-30 | 2011-12-07 | 四川虹欧显示器件有限公司 | 各向异性导电胶和导电膜以及电连接方法 |
JP5668636B2 (ja) * | 2010-08-24 | 2015-02-12 | 日立化成株式会社 | 回路接続構造体の製造方法 |
WO2012073739A1 (ja) * | 2010-11-29 | 2012-06-07 | シャープ株式会社 | 基板モジュール |
JP5643623B2 (ja) | 2010-12-02 | 2014-12-17 | デクセリアルズ株式会社 | 異方性導電材料及びその製造方法 |
JP5703061B2 (ja) * | 2011-02-23 | 2015-04-15 | 積水化学工業株式会社 | 接続構造体の製造方法 |
JP6099297B2 (ja) * | 2011-03-29 | 2017-03-22 | 株式会社アドマテックス | 無機粉体混合物及びフィラー含有組成物 |
JP5982380B2 (ja) * | 2011-08-19 | 2016-08-31 | 富士フイルム株式会社 | 撮像素子モジュール及びその製造方法 |
JP5678950B2 (ja) * | 2012-01-06 | 2015-03-04 | Tdk株式会社 | ガラスセラミックス焼結体及び配線基板 |
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CN106063391A (zh) | 2016-10-26 |
WO2015105098A1 (ja) | 2015-07-16 |
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TW201536142A (zh) | 2015-09-16 |
TWI684393B (zh) | 2020-02-01 |
KR20160106134A (ko) | 2016-09-09 |
CN109994392A (zh) | 2019-07-09 |
JP2015130426A (ja) | 2015-07-16 |
CN109994392B (zh) | 2023-04-07 |
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