WO2015105098A1 - 接続方法、及び接合体 - Google Patents

接続方法、及び接合体 Download PDF

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Publication number
WO2015105098A1
WO2015105098A1 PCT/JP2015/050140 JP2015050140W WO2015105098A1 WO 2015105098 A1 WO2015105098 A1 WO 2015105098A1 JP 2015050140 W JP2015050140 W JP 2015050140W WO 2015105098 A1 WO2015105098 A1 WO 2015105098A1
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Prior art keywords
anisotropic conductive
ceramic substrate
connection method
electronic component
conductive film
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PCT/JP2015/050140
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English (en)
French (fr)
Inventor
良介 小高
佐藤　大祐
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デクセリアルズ株式会社
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Application filed by デクセリアルズ株式会社 filed Critical デクセリアルズ株式会社
Priority to CN201580003741.8A priority Critical patent/CN106063391B/zh
Priority to CN201910412779.0A priority patent/CN109994392B/zh
Priority to KR1020167021411A priority patent/KR102275926B1/ko
Publication of WO2015105098A1 publication Critical patent/WO2015105098A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Definitions

  • an object of the present invention is to provide a connection method and a bonded body that are excellent in easy repair and connection reliability even when the terminal height of the ceramic substrate varies.

Abstract

セラミック基板（２）の端子（１）と、電子部品の端子とを異方性導電接続させる接続方法において、前記セラミック基板（２）の端子（１）上に異方性導電フィルムを貼り付ける貼付工程と、前記異方性導電フィルム上に前記電子部品を載置する載置工程と、前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、前記セラミック基板（２）の高さバラツキが、２０μｍ以上であり、前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上の導電性粒子とを含有する接続方法である。

Description

接続方法、及び接合体
　本発明は、接続方法、及び接合体に関する。
　エポキシ系の異方性導電接着フィルムやラジカル重合系の異方性導電接着フィルムは、電子部品用の接着剤として用いられている（例えば、特許文献１～３参照）。
　また、接着剤成分とセラミックとの接着力を向上させるために、疎水性シリカ表面がジスルフィド系シランカップリング剤で表面処理されたシリカ粒子を異方性導電フィルムに配合したものが用いられることがある（例えば、特許文献４参照）。
　異方性導電接着フィルムは、携帯機器のカメラモジュールと基板との接続に使用されることがある。しかし、カメラモジュールにはセラミック基板が使用されることがあり、その場合は、非常に低い圧力でないと、基板が割れたり、電子部品が故障したりする等の問題がある。また、一般にセラミック基板は、端子高さのバラツキが大きく、従来の異方性導電接着フィルムでは、このバラツキに対応することが困難である。
　前記端子高さのバラツキは、圧着後のフレキシブル基板に大きな凹凸を形成させることとなり、圧着後に反発力が生じることになる。通常のラジカル重合系の異方性導電接着フィルムでは、凝集力が小さいため、この反発力に抗うことができず、導通抵抗が大きくなり、接続信頼性が低下する恐れがある。
　また、近年、電子部品の多様化に伴い、リペア性の要求が高まっているところ、エポキシ系の異方性導電接着フィルムでは、凝集力が大きいため、接続信頼性は優れるが、リペア性が不十分である。
　したがって、セラミック基板の端子高さバラツキがあっても、易リペア性及び接続信頼性に優れる接続方法及び接合体が求められているのが現状である。
特開２００３－２３８９２５号公報 特開２００２－１４６３２５号公報 特開２００２－１２８４２号公報 特開２０１１－４９１８６号公報
　本発明は、従来における前記諸問題を解決し、以下の目的を達成することを課題とする。即ち、本発明は、セラミック基板の端子高さバラツキがあっても、易リペア性及び接続信頼性に優れる接続方法及び接合体を提供することを目的とする。
　前記課題を解決するための手段としては、以下の通りである。即ち、
　＜１＞　セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、
　前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、
　前記異方性導電フィルム上に前記電子部品を載置する載置工程と、
　前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、
　前記セラミック基板の高さバラツキが、２０μｍ以上であり、
　前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上の導電性粒子とを含有することを特徴とする接続方法である。
　＜２＞　導電性粒子の平均粒径（μｍ）が、セラミック基板の高さバラツキ（μｍ）の３５％～１００％である前記＜１＞に記載の接続方法である。
　＜３＞　異方性導電フィルムが、表面に有機基を有するシリカ粒子を３質量％～２０質量％含有する前記＜１＞から＜２＞のいずれかに記載の接続方法である。
　＜４＞　有機基が、ビニル基及びアクリロイル基のいずれかである前記＜３＞に記載の接続方法である。
　＜５＞　セラミック基板が、カメラモジュールである前記＜１＞から＜４＞のいずれかに記載の接続方法である。
　＜６＞　前記＜１＞から＜５＞のいずれかに記載の接続方法を用いて作製されたことを特徴とする接合体である。
　本発明によれば、従来における前記諸問題を解決し、前記目的を達成することができ、セラミック基板の端子高さバラツキがあっても、易リペア性及び接続信頼性に優れる接続方法及び接合体を提供することができる。
図１は、セラミック基板の一例を示す概略図である。 図２は、高さバラツキを求めるためのプロファイルの一例を示す図である。
（接続方法及び接合体）
　本発明の接続方法は、貼付工程と、載置工程と、加熱押圧工程とを少なくとも含み、更に必要に応じて、その他の工程を含む。
　前記接続方法は、セラミック基板の端子と、電子部品との端子とを異方性導電接続させる接続方法である。
　本発明の接合体は、本発明の前記接続方法により製造される。
＜貼付工程＞
　前記貼付工程としては、セラミック基板の端子上に異方性導電フィルムを貼り付ける工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
＜＜セラミック基板＞＞
　前記セラミック基板としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、カメラモジュール、チューナーモジュール、パワーアンプモジュールなどが挙げられる。
－高さバラツキ－
　前記セラミック基板の高さバラツキは、本発明の接続方法においては、２０μｍ以上である。本発明の接続方法においては、高さバラツキが２０μｍ以上あるセラミック基板を用いても、易リペア性及び接続信頼性に優れる接続方法が得られる。
－高さバラツキの測定－
　セラミック基板の高さバラツキは、例えば、表面粗さ計（小坂研究所製、サーフコーダ　ＳＥ－４００）を用いて測定できる。
　具体的には、図１に示すような、端子１を有するセラミック基板２に対して、表面粗さ計の触針を、端子１上の図１の矢印の方向に走査させる。そうすると、端子１による凹凸並びにセラミック基板の歪みにより、図２に示すような走査プロファイルが得られる。
　得られたプロファイルの大きなうねりの上部と下部との差よりバラツキを測定する。詳しくは、前記上部において短距離で見た時の小さなうねりの上部と、前記下部において短距離で見た時の小さなうねりの上部との差より、セラミック基板の高さバラツキを測定する。
＜＜異方性導電フィルム＞＞
　前記異方性導電フィルムは、導電性粒子と、ラジカル重合性物質と、熱ラジカル開始剤とを少なくとも含有し、好ましくはシリカ粒子を含有し、更に必要に応じて、その他の成分を含有する。
－導電性粒子－
　前記導電性粒子としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、銅、鉄、ニッケル、金、銀、アルミニウム、亜鉛、ステンレス、ヘマタイト（Ｆｅ２Ｏ３）、マグネタイト（Ｆｅ３Ｏ４）、一般式：ＭＦｅ２Ｏ４、ＭＯ・ｎＦｅ２Ｏ３（両式中、Ｍは、２価の金属を表し、例えば、Ｍｎ，Ｃｏ，Ｎｉ，Ｃｕ，Ｚｎ，Ｂａ，Ｍｇなどが挙げられる。ｎは、正の整数である。そして、前記Ｍは、繰り返し時において同種であってもよいし、異種であってもよい。）で表される各種フェライト、ケイ素綱粉、パーマロイ、Ｃｏ基アモルファス合金、センダスト、アルパーム、スーパーマロイ、ミューメタル、パーメンター、パーミンバー等の各種金属粉、その合金粉などが挙げられる。また、アクリル樹脂、アクリロニトリル・スチレン（ＡＳ）樹脂、ベンゾグアナミン樹脂、ジビニルベンゼン系樹脂、スチレン系樹脂等の粒子の表面に金属をコートしたもの、あるいは、これらの粒子の表面に更に絶縁薄膜をコートしたもの等が挙げられる。これらの中でも、接続信頼性の点から、アクリル樹脂の粒子の表面をＮｉ－Ａｕコートした粒子がより好ましい。
　これらの導電性粒子は、１種単独で使用してもよいし、２種以上を併用してもよい。
　前記導電性粒子の平均粒径は、１３μｍ以上であり、１５μｍ～３０μｍが好ましい。
　また、前記導電性粒子の平均粒径（μｍ）は、前記セラミック基板の高さバラツキ（μｍ）の３５％～１００％であることが導通確保の点で好ましい。
　前記導電性粒子の粒径は、走査型電子顕微鏡（ＳＥＭ）により測定することができる。前記導電性粒子の粒径について任意の１００個を測定した際の算術平均値が、前記平均粒径である。
　前記異方性導電フィルムにおける前記導電性粒子の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電フィルム１００質量部に対して、１質量部～１０質量部が好ましい。
－ラジカル重合性物質－
　前記ラジカル重合性物質としては、前記熱ラジカル開始剤の作用によるラジカル重合する物質であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシアクリレート、ウレタンアクリレート、ポリエステルアクリレートなどが挙げられる。
　前記ラジカル重合性物質は、１種単独で使用してもよいし、２種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。
　前記異方性導電フィルムにおける前記ラジカル重合性物質の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電フィルム１００質量部に対して、１０質量部～６０質量部が好ましく、３０質量部～６０質量部がより好ましい。
－熱ラジカル開始剤－
　前記熱ラジカル開始剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、有機過酸化物などが挙げられる。
　前記有機過酸化物としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、パーオキシケタール類、ジアシルパーオキサイド類、パーオキシジカーボネート類、パーオキシエステル類、ジアルキルパーオキサイド類、ハイドロパーオキサイド類、シリルパーオキサイド類などが挙げられる。
　前記熱ラジカル開始剤は、１種単独で使用してもよいし、２種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。
　前記異方性導電フィルムにおける前記熱ラジカル開始剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電フィルム１００質量部に対して、０．５質量部～２０質量部が好ましい。
－シリカ粒子－
　前記シリカ粒子としては、特に制限はなく、目的に応じて適宜選択することができるが、有機基を有していることが好ましい。
　前記有機基としては、特に制限はなく、目的に応じて適宜選択することができるが、ビニル基、アクリロイル基が、ラジカル重合性物質との反応性の点で好ましい。
　前記異方性導電フィルムにおける前記シリカ粒子の含有量としては、特に制限はなく、目的に応じて適宜選択することができるが、前記異方性導電フィルムに対して、３質量％～２０質量％であることが溶融粘度の調整の点で好ましい。
－その他の成分－
　前記その他の成分としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、膜形成樹脂、シランカップリング剤などが挙げられる。
－－膜形成樹脂－－
　前記膜形成樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、フェノキシ樹脂、ポリエステル樹脂、ポリウレタン樹脂、ポリエステルウレタン樹脂、アクリル樹脂、ポリイミド樹脂、ブチラール樹脂などが挙げられるが、膜形成状態、接続信頼性などの観点からフェノキシ樹脂が好適に挙げられる。
　これらの膜形成樹脂は、１種単独で使用してもよいし、２種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。
－－シランカップリング剤－－
　前記シランカップリング剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシ系シランカップリング剤、アクリル系シランカップリング剤、チオール系シランカップリング剤、アミン系シランカップリング剤などが挙げられる。
　前記異方性導電フィルムにおける前記シランカップリング剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
　前記異方性導電フィルムの平均厚みとしては、特に制限はなく、目的に応じて適宜選択することができるが、２０μｍ～３５μｍが好ましく、２０μｍ～３０μｍがより好ましい。
＜載置工程＞
　前記載置工程としては、前記異方性導電フィルム上に前記電子部品を載置する工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
　通常、この際、異方性導電接続は行われていない。
＜＜電子部品＞＞
　前記電子部品としては、異方性導電性接続の対象となる、端子を有する電子部品であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、ＩＣチップ、ＴＡＢテープ、液晶パネル、フレキシブル基板などが挙げられる。
　前記ＩＣチップとしては、例えば、フラットパネルディスプレイ（ＦＰＤ）における液晶画面制御用ＩＣチップなどが挙げられる。
＜加熱押圧工程＞
　前記加熱押圧工程としては、前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
　前記加熱押圧部材としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、加熱機構を有する押圧部材などが挙げられる。前記加熱機構を有する押圧部材としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、ヒートツールなどが挙げられる。
　前記加熱の温度としては、特に制限はなく、目的に応じて適宜選択することができるが、１４０℃～２００℃が好ましい。
　前記押圧の圧力としては、２ＭＰａ未満であれば、特に制限はなく、目的に応じて適宜選択することができるが、０．５ＭＰａ～１．５ＭＰａが好ましい。
　前記加熱及び押圧の時間としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、０．１秒間～１２０秒間が挙げられる。
　以下、本発明の実施例を説明するが、本発明は、これらの実施例に何ら限定されるものではない。
（実施例１）
＜異方性導電フィルムの作製＞
　ビスフェノールＡフェノキシ樹脂（商品名：ＹＰ５０、新日鉄住金化学株式会社製）を４０質量部、２官能エポキシアクリレート（商品名：３００２Ａ、共栄社化学株式会社製）を１５質量部、２官能アクリレート（商品名：ＤＣＰ、新中村化学工業株式会社製）を１６質量部、ブタジエン－アクリロニトリルゴム（商品名：ＸＥＲ－９１、ＪＳＲ株式会社製）を１５質量部、水酸基含有アクリルゴム（商品名：ＳＧ－８０Ｈ、ナガセケムテックス株式会社製）を４質量部、アクリロイル基表面処理シリカ（商品名：ＹＡ０１０Ｃ－ＳＭ１、株式会社アドマテックス製）を３質量部、脂肪族系ジアシルパーオキサイド（商品名：パーロイルＬ、日油株式会社製）を４質量部及び平均粒径１５μｍのＮｉ／Ａｕメッキアクリル樹脂粒子（日本化学株式会社製）を３質量部を配合した合計１００質量部の異方性導電組成物を得た。
　得られた異方性導電組成物を、離型ＰＥＴ（ポリエチレンテレフタレート）上に塗布した後、８０℃で乾燥し、平均厚み２５μｍの異方性導電フィルムを得た。
＜接続方法、及び接合体の製造＞
　評価基材として、フレキシブルプリント基板（銅配線：ライン／スペース（Ｌ／Ｓ）＝１００μｍ／１００μｍ、端子高さ：１２μｍ、ポリイミド厚み：２５μｍ）とアルミナ製セラミック基板（タングステン配線：ライン／スペース（Ｌ／Ｓ）＝１００μｍ／１００μｍ、配線高さ：１０μｍ、基板厚み：０．４ｍｍ）を用い、異方性導電接続を行った。
　セラミック基板の端子上に異方性導電フィルムを貼り付け、前記異方性導電フィルム上に前記電子部品を載置し、前記電子部品を加熱押圧部材により、１４０℃で、１０秒間、１ＭＰａの押圧力で加熱及び押圧することにより接合体が得られた。
＜導通抵抗の測定＞
　各接合体について、初期及び温度８５℃、湿度８５％ＲＨ、５００ｈｒ投入後の接続抵抗値は、デジタルマルチメータ（３４４０１Ａ、アジレント・テクノロジー株式会社製）を用いて測定した。測定方法としては、４端子法を用い、電流１ｍＡを流して行った。
　以下の基準で評価した。結果を表１－１に示す。
○：０．２Ω以上０．５Ω未満
△：０．５Ω以上１．０Ω未満
×：１．０Ω以上
＜リペア性の評価＞
　各接合体について、フレキシブルプリント基板をセラミック基板から剥がし、ＩＰＡ（イソプロピルアルコール）を十分に染み込ませた綿棒で接続部を５０往復擦り、残存する異方性導電フィルムが剥がれたものを○、剥がれなかったものを×とした。結果を表１－１に示す。
＜高さバラツキの測定＞
　セラミック基板の端子上を、表面粗さ計（小坂研究所製、サーフコーダ　ＳＥ－４００）の触針を走査させ、凹凸のプロファイルを得た。
　得られたプロファイルの大きなうねりの上部と下部との差よりバラツキを測定した。詳しくは、前記上部において短距離で見た時の小さなうねりの上部と、前記下部において短距離で見た時の小さなうねりの上部との差より、セラミック基板の高さバラツキを測定した。結果を表１－１に示す。
（実施例２～１４、比較例１～４）
＜異方性導電フィルムの作製、及び接合体の製造＞
　実施例１において、材料の種類、圧着条件、圧力を表１－１及び表１－２のように変更した以外は、実施例１と同様にして、異方性導電フィルムの作製、及び接合体の製造を行った。
　また、実施例１と同様の評価を行った。結果を表１－１及び表１－２に示す。
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
 ＹＰ５０：ビスフェノールＡフェノキシ樹脂（新日鉄住金化学株式会社製）
ＥＰ８２８：エポキシ樹脂（三菱化学株式会社製）
ノバキュア３９４１ＨＰ：硬化剤（旭化成ケミカルズ株式会社製）
３００２Ａ：２官能エポキシアクリレート（共栄社化学株式会社製）
ＤＣＰ：２官能アクリレート（新中村化学工業株式会社製）
ＸＥＲ－９１：ブタジエン－アクリロニトリルゴム（ＪＳＲ株式会社製）
ＳＧ－８０Ｈ：水酸基含有アクリルゴム（ナガセケムテックス株式会社製）
ＹＡ０１０Ｃ－ＳＭ１：アクリロイル基表面処理シリカ（アドマテックス株式会社製）
ＹＡ０１０Ｃ－ＳＶ２：ビニル基表面処理シリカ（アドマテックス株式会社製）
ＹＡ０１０Ｃ－ＳＰ２：フェニル基表面処理シリカ（アドマテックス株式会社製）
Ｒ２０２：シリカ（日本アエロジル株式会社製）
パーロイルＬ：脂肪族系ジアシルパーオキサイド（日油株式会社製）
Ｎｉ／Ａｕメッキアクリル樹脂粒子：平均粒径１０μｍ（日本化学株式会社製）
Ｎｉ／Ａｕメッキアクリル樹脂粒子：平均粒径１５μｍ（日本化学株式会社製）
Ｎｉ／Ａｕメッキアクリル樹脂粒子：平均粒径２０μｍ（日本化学株式会社製）
　本発明の接続方法であれば、セラミック基板の端子高さバラツキがあっても、易リペア性及び接続信頼性に優れることから、携帯電話のカメラモジュールに特に好適に使用できる。
　　　１　　　端子
　　　２　　　セラミック基板

Claims (6)

  1. 　セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、
    　前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、
    　前記異方性導電フィルム上に前記電子部品を載置する載置工程と、
    　前記電子部品を加熱押圧部材により２ＭＰａ未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、
    　前記セラミック基板の高さバラツキが、２０μｍ以上であり、
    　前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が１３μｍ以上の導電性粒子とを含有することを特徴とする接続方法。
  2. 　導電性粒子の平均粒径（μｍ）が、セラミック基板の高さバラツキ（μｍ）の３５％～１００％である請求項１に記載の接続方法。
  3. 　異方性導電フィルムが、表面に有機基を有するシリカ粒子を３質量％～２０質量％含有する請求項１から２のいずれかに記載の接続方法。
  4. 　有機基が、ビニル基及びアクリロイル基のいずれかである請求項３に記載の接続方法。
  5. 　セラミック基板が、カメラモジュールである請求項１から４のいずれかに記載の接続方法。
  6. 　請求項１から５のいずれかに記載の接続方法を用いて作製されたことを特徴とする接合体。
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