CN106063391A - 连接方法及接合体 - Google Patents

连接方法及接合体 Download PDF

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Publication number
CN106063391A
CN106063391A CN201580003741.8A CN201580003741A CN106063391A CN 106063391 A CN106063391 A CN 106063391A CN 201580003741 A CN201580003741 A CN 201580003741A CN 106063391 A CN106063391 A CN 106063391A
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Prior art keywords
anisotropic conductive
ceramic substrate
attachment
conductive film
electronic component
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CN201580003741.8A
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CN106063391B (zh
Inventor
小高良介
佐藤大祐
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Dexerials Corp
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Dexerials Corp
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Priority to CN201910412779.0A priority Critical patent/CN109994392B/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Abstract

本申请公开一种连接方法，其是将陶瓷基板(2)的端子(1)与电子零件的端子进行各向异性导电连接，其包括：贴附步骤，将各向异性导电膜贴附在所述陶瓷基板(2)的端子(1)上；载置步骤，在所述各向异性导电膜上载置所述电子零件；和加热按压步骤，利用加热按压构件以小于2MPa的按压力对所述电子零件进行加热及按压；所述陶瓷基板(2)的高度偏差为20μm以上，所述各向异性导电膜含有自由基聚合性物质、热自由基引发剂及平均粒径为13μm以上的导电性粒子。

Description

连接方法及接合体
技术领域
本发明涉及一种连接方法及接合体。
背景技术
环氧系的各向异性导电粘接膜或自由基聚合系的各向异性导电粘接膜是用作电子零件用的粘接剂(例如参照专利文献1～3)。
另外，为了提高粘接剂成分与陶瓷的粘接力，有使用将疏水性二氧化硅表面被二硫醚系硅烷偶联剂表面处理过的二氧化硅粒子调配到各向异性导电膜中的情况(例如参照专利文献4)。
有将各向异性导电粘接膜用于将移动设备的照相模块与基板连接的情况。但是，有时照相模块会使用陶瓷基板，在这种情况下，如果不是非常低的压力，则存在基板破裂、或者电子零件发生故障等问题。另外，通常陶瓷基板的端子高度的偏差较大，现有的各向异性导电粘接膜难以应对这种偏差。
所述端子高度的偏差会使压接后的软性基板上形成大的凹凸，而在压接后产生斥力。通常的自由基聚合系的各向异性导电粘接膜由于凝聚力小，因此无法抵抗这种斥力，而有导通电阻变大、连接可靠性降低的担忧。
另外，近年来随着电子零件的多样化，对于修复性的要求变高，但环氧系的各向异性导电粘接膜由于凝聚力较大，所以虽然连接可靠性优异，但修复性不足。
因此，现状是业界正谋求即便存在陶瓷基板的端子高度偏差，易修复性及连接可靠性也优异的连接方法及接合体。
现有技术文献
专利文献
专利文献1：日本专利公开第2003-238925号公报
专利文献2：日本专利公开第2002-146325号公报
专利文献3：日本专利公开第2002-12842号公报
专利文献4：日本专利公开第2011-49186号公报
发明内容
[发明要解决的问题]
本发明的课题在于解决现有的所述各问题，从而达成以下的目的。即，本发明的目的在于提供一种即便存在陶瓷基板的端子高度偏差，易修复性及连接可靠性也优异的连接方法及接合体。
[解决问题的技术手段]
用以解决所述课题的手段如以下所述。即，
<1>一种连接方法，其是将陶瓷基板的端子与电子零件的端子进行各向异性导电连接，其特征在于包括：
贴附步骤，将各向异性导电膜贴附在所述陶瓷基板的端子上；
载置步骤，在所述各向异性导电膜上载置所述电子零件；和
加热按压步骤，通过加热按压构件以小于2MPa的按压力对所述电子零件进行加热及按压；
所述陶瓷基板的高度偏差为20μm以上，
所述各向异性导电膜含有自由基聚合性物质、热自由基引发剂及平均粒径为13μm以上的导电性粒子。
<2>根据所述<1>所述的连接方法，其中导电性粒子的平均粒径(μm)是陶瓷基板高度偏差(μm)的35％～100％。
<3>根据所述<1>至<2>中任一项所述的连接方法，其中各向异性导电膜含有3质量％～20质量％的表面具有有机基的二氧化硅粒子。
<4>根据所述<3>所述的连接方法，其中有机基是乙烯基及丙烯酰基中的任一种。
<5>根据所述<1>至<4>中任一项所述的连接方法，其中陶瓷基板是照相模块。
<6>一种接合体，其特征在于：其是使用如所述<1>至<5>中任一项所述的连接方法而制作。
[发明的效果]
根据本发明，可解决现有的所述各问题，而达成所述目的，可提供一种即便存在陶瓷基板的端子高度偏差，易修复性及连接可靠性也优异的连接方法及接合体。
附图说明
图1是表示陶瓷基板的一个例子的示意图。
图2是表示用来求出高度偏差的分布的一个例子的图。
具体实施方式
(连接方法及接合体)
本发明的连接方法至少包括贴附步骤、载置步骤以及加热按压步骤，根据需要还包括其它步骤。
所述连接方法是将陶瓷基板的端子与电子零件的端子进行各向异性导电连接的连接方法。
本发明的接合体是通过本发明的所述连接方法而制造。
<贴附步骤>
作为所述贴附步骤，只要是在陶瓷基板的端子上贴附各向异性导电膜的步骤，则没有特别限制，可根据目的而适当选择。
<<陶瓷基板>>
作为所述陶瓷基板，没有特别限制，可根据目的而适当选择，例如可列举：照相模块、调谐模块、功率放大模块等。
-高度偏差-
在本发明的连接方法中，所述陶瓷基板的高度偏差为20μm以上。在本发明的连接方法中，可获得即便使用高度偏差为20μm以上的陶瓷基板，易修复性及连接可靠性也优异的连接方法。
-高度偏差的测定-
陶瓷基板的高度偏差例如可使用表面粗糙度计(小坂研究所制造，SurfcorderSE-400)来测定。
具体而言，对于图1所示的具有端子1的陶瓷基板2，使表面粗糙度计的触针沿着端子1上的图1的箭头方向进行扫描。由此，根据由端子1测得的凹凸以及陶瓷基板的变形，而获得图2所示的扫描分布。
根据所获得的分布的大起伏的上部与下部的差来测定偏差。详细而言，根据所述上部中以近距离观察时的小起伏的上部与所述下部中以近距离观察时的小起伏的上部的差，测定出陶瓷基板的高度偏差。
<<各向异性导电膜>>
所述各向异性导电膜至少含有导电性粒子、自由基聚合性物质以及热自由基引发剂，优选含有二氧化硅粒子，根据需要还含有其它成分。
-导电性粒子-
作为所述导电性粒子，没有特别限制，可根据目的而适当选择，例如可列举：铜、铁、镍、金、银、铝、锌、不锈钢、赤铁矿(Fe2O3)、磁铁矿(Fe3O4)、通式：MFe2O4、MO·nFe2O3(两式中，M表示二价金属，例如可列举：Mn、Co、Ni、Cu、Zn、Ba、Mg等；n为正整数；此外，所述M在反复出现时可为相同种类也可为不同种类)所表示的各种铁氧体、硅钢粉、镍铁合金、钴基非晶合金、铁硅铝合金、阿尔帕姆高导磁铁铝合金、镍铁钼超导磁合金、锰游合金、铁钴合金、镍铁钴合金等各种金属粉、其合金粉等。另外，可列举在丙烯酸系树脂、丙烯腈-苯乙烯(AS)树脂、苯代三聚氰胺树脂、二乙烯苯系树脂、苯乙烯系树脂等粒子的表面涂布金属而成的粒子、或者在这些粒子的表面进一步涂布绝缘薄膜而成的粒子等。这些中，就连接可靠性的方面而言，更优选在丙烯酸系树脂的粒子的表面涂布Ni-Au而获得的粒子。
这些导电性粒子可单独使用一种，也可将两种以上并用。
所述导电性粒子的平均粒径为13μm以上，优选15μm～30μm。
另外，就确保导通的方面而言，所述导电性粒子的平均粒径(μm)优选为所述陶瓷基板的高度偏差(μm)的35％～100％。
所述导电性粒子的粒径可利用扫描型电子显微镜(SEM)来测定。对于所述导电性粒子的粒径测定任意100个时的算术平均值为所述平均粒径。
作为所述各向异性导电膜中的所述导电性粒子的含量，没有特别限制，可根据目的而适当选择，相对于所述各向异性导电膜100质量份，优选1质量份～10质量份。
-自由基聚合性物质-
作为所述自由基聚合性物质，只要为通过所述热自由基引发剂的作用而进行自由基聚合的物质，则没有特别限制，可根据目的而适当选择，例如可列举：环氧丙烯酸酯、丙烯酸氨基甲酸酯、聚酯丙烯酸酯等。
所述自由基聚合性物质可单独使用一种，也可将两种以上并用，另外，可为适当合成品，也可为市售品。
作为所述各向异性导电膜中的所述自由基聚合性物质的含量，没有特别限制，可根据目的而适当选择，相对于所述各向异性导电膜100质量份，优选10质量份～60质量份，更优选30质量份～60质量份。
-热自由基引发剂-
作为所述热自由基引发剂，没有特别限制，可根据目的而适当选择，例如可列举：有机过氧化物等。
作为所述有机过氧化物，没有特别限制，可根据目的而适当选择，例如可列举：过氧缩酮类、二酰基过氧化物类、过氧化二碳酸酯类、过氧酯类、二烷基过氧化物类、过氧化氢类、硅烷基过氧化物类等。
所述热自由基引发剂可单独使用一种，也可将两种以上并用，另外，可为适当合成品，也可为市售品。
作为所述各向异性导电膜中的所述热自由基引发剂的含量，没有特别限制，可根据目的而适当选择，相对于所述各向异性导电膜100质量份，优选0.5质量份～20质量份。
-二氧化硅粒子-
作为所述二氧化硅粒子，没有特别限制，可根据目的而适当选择，优选具有有机基。
作为所述有机基，没有特别限制，可根据目的而适当选择，就与自由基聚合性物质的反应性的方面而言，优选乙烯基、丙烯酰基。
作为所述各向异性导电膜中的所述二氧化硅粒子的含量，没有特别限制，可根据目的而适当选择，就调整熔融粘度的方面而言，相对于所述各向异性导电膜，优选3质量％～20质量％。
-其它成分-
作为所述其它成分，没有特别限制，可根据目的而适当选择，例如可列举：膜形成树脂、硅烷偶联剂等。
--膜形成树脂--
作为所述膜形成树脂，没有特别限制，可根据目的而适当选择，例如可列举：苯氧基树脂、聚酯树脂、聚氨基甲酸酯树脂、聚酯氨基甲酸酯树脂、丙烯酸系树脂、聚酰亚胺树脂、缩丁醛树脂等，就膜形成状态、连接可靠性等观点而言，适宜列举苯氧基树脂。
这些膜形成树脂可单独使用一种，也可将两种以上并用，另外，可为适当合成品，也可为市售品。
--硅烷偶联剂--
作为所述硅烷偶联剂，没有特别限制，可根据目的而适当选择，例如可列举：环氧系硅烷偶联剂、丙烯酸系硅烷偶联剂、硫醇系硅烷偶联剂、胺系硅烷偶联剂等。
作为所述各向异性导电膜中的所述硅烷偶联剂的含量，没有特别限制，可根据目的而适当选择。
作为所述各向异性导电膜的平均厚度，没有特别限制，可根据目的而适当选择，优选20μm～35μm，更优选20μm～30μm。
<载置步骤>
作为所述载置步骤，只要为将所述电子零件载置在所述各向异性导电膜上的步骤，则没有特别限制，可根据目的而适当选择。
通常，此时尚未进行各向异性导电连接。
<<电子零件>>
作为所述电子零件，只要为成为各向异性导电性连接的对象的具有端子的电子零件，则没有特别限制，可根据目的而适当选择，例如可列举：IC芯片、TAB胶带、液晶面板、软性基板等。
作为所述IC(integrated circuit，集成电路)芯片，例如可列举：平板显示器(FPD)中的液晶画面控制用IC芯片等。
<加热按压步骤>
作为所述加热按压步骤，只要为利用加热按压构件以小于2MPa的按压力对所述电子零件进行加热及按压的步骤，则没有特别限制，可根据目的而适当选择。
作为所述加热按压构件，没有特别限制，可根据目的而适当选择，例如可列举：具有加热机构的按压构件等。作为所述具有加热机构的按压构件，没有特别限制，可根据目的而适当选择，例如可列举热封机等。
作为所述加热的温度，没有特别限制，可根据目的而适当选择，优选140℃～200℃。
作为所述按压的压力，只要小于2MPa，则没有特别限制，可根据目的而适当选择，优选0.5MPa～1.5MPa。
作为所述加热及按压的时间，没有特别限制，可根据目的而适当选择，例如可列举0.1秒～120秒。
[实施例]
以下，对本发明的实施例进行说明，但本发明不受这些实施例的任何限定。
(实施例1)
<各向异性导电膜的制作>
调配双酚A苯氧基树脂(商品名：YP50，新日铁住金化学股份有限公司制造)40质量份、双官能环氧丙烯酸酯(商品名：3002A，共荣社化学股份有限公司制造)15质量份、双官能丙烯酸酯(商品名：DCP，新中村化学工业股份有限公司制造)16质量份、丁二烯-丙烯腈橡胶(商品名：XER-91，JSR股份有限公司制造)15质量份、含羟基丙烯酸系橡胶(商品名：SG-80H，长濑化成(Nagase chemteX)股份有限公司制造)4质量份、丙烯酰基表面处理二氧化硅(商品名：YA010C-SM1，雅都玛(Admatechs)股份有限公司制造)3质量份、脂肪族系二酰基过氧化物(商品名：Peroyl L，日油股份有限公司制造)4质量份以及平均粒径15μm的镀镍/金丙烯酸系树脂粒子(日本化学股份有限公司制造)3质量份，而获得合计100质量份的各向异性导电组合物。
将所获得的各向异性导电组合物涂布在脱模PET(聚对苯二甲酸乙二酯)上之后，在80℃下加以干燥，而获得平均厚度25μm的各向异性导电膜。
<连接方法及接合体的制造>
使用软性印刷基板(铜配线：线/间距(L/S)＝100μm/100μm，端子高度：12μm，聚酰亚胺厚度：25μm)与氧化铝制陶瓷基板(钨配线：线/间距(L/S)＝100μm/100μm，配线高度：10μm，基板厚度：0.4mm)作为评价基材，进行各向异性导电连接。
将各向异性导电膜贴附在陶瓷基板的端子上，将所述电子零件载置在所述各向异性导电膜上，通过加热按压构件，在140℃下以1MPa的按压力将所述电子零件加热及按压10秒，由此获得接合体。
<导通电阻的测定>
对于各接合体，初期及温度85℃、湿度85％RH、投入500hr后的连接抵抗值是使用数字万用表(34401A，安捷伦科技(Agilent Technology)股份有限公司制造)来测定。作为测定方法，使用四端子法通入1mA电流而进行。
按照以下的标准进行评价。将结果示于表1-1。
○：0.2Ω以上且小于0.5Ω
△：0.5Ω以上且小于1.0Ω
×：1.0Ω以上
<修复性的评价>
对于各接合体，将软性印刷基板从陶瓷基板剥离，用充分渗入有IPA(异丙醇)的棉棒将连接部来回擦拭50次，将残存的各向异性导电膜剥落者评价为○，将未剥落者评价为×。将结果示于表1-1。
<高度偏差的测定>
利用表面粗糙度计(小坂研究所制造，Surfcorder SE-400)的触针在陶瓷基板的端子上进行扫描，而获得凹凸的分布。
根据所获得的分布的大起伏的上部与下部的差来测定偏差。详细而言，根据所述上部中以近距离观察时的小起伏的上部与所述下部中以近距离观察时的小起伏的上部的差，测定出陶瓷基板的高度偏差。将结果示于表1-1。
(实施例2～14、比较例1～4)
<各向异性导电膜的制作及接合体的制造>
在实施例1中，如表1-1及表1-2所述变更材料的种类、压接条件、压力，除此以外，以与实施例1同样的方式进行各向异性导电膜的制作及接合体的制造。
另外，进行与实施例1同样的评价。将结果示于表1-1及表1-2。
[表1-1]
[表1-2]
YP50：双酚A苯氧基树脂(新日铁住金化学股份有限公司制造)
EP828：环氧树脂(三菱化学股份有限公司制造)
Novacure 3941HP：硬化剂(旭化成化学股份有限公司制造)
3002A：双官能环氧丙烯酸酯(共荣社化学股份有限公司制造)
DCP：双官能丙烯酸酯(新中村化学工业股份有限公司制造)
XER-91：丁二烯-丙烯腈橡胶(JSR股份有限公司制造)
SG-80H：含羟基的丙烯酸系橡胶(长濑化成(Nagase chemteX)股份有限公司制造)
YA010C-SM1：丙烯酰基表面处理二氧化硅(雅都玛(Admatechs)股份有限公司制造)
YA010C-SV2：乙烯基表面处理二氧化硅(雅都玛(Admatechs)股份有限公司制造)
YA010C-SP2：苯基表面处理二氧化硅(雅都玛(Admatechs)股份有限公司制造)
R202：二氧化硅(日本Aerosil股份有限公司制造)
Peroyl L：脂肪族系二酰基过氧化物(日油股份有限公司制造)
镀镍/金丙烯酸系树脂粒子：平均粒径10μm(日本化学股份有限公司制造)
镀镍/金丙烯酸系树脂粒子：平均粒径15μm(日本化学股份有限公司制造)
镀镍/金丙烯酸系树脂粒子：平均粒径20μm(日本化学股份有限公司制造)
[工业上的可利用性]
如果采用本发明的连接方法，则即便存在陶瓷基板的端子高度偏差，易修复性及连接可靠性也优异，因此可特别适宜地用于手机的照相模块。
[附图标记说明]
1 端子
2 陶瓷基板

Claims (6)

1.一种连接方法，其是将陶瓷基板的端子与电子零件的端子进行各向异性导电连接，其特征在于包括：
贴附步骤，将各向异性导电膜贴附在所述陶瓷基板的端子上；
载置步骤，在所述各向异性导电膜上载置所述电子零件；和
加热按压步骤，利用加热按压构件以小于2MPa的按压力对所述电子零件进行加热及按压；
所述陶瓷基板的高度偏差为20μm以上，
所述各向异性导电膜含有自由基聚合性物质、热自由基引发剂及平均粒径为13μm以上的导电性粒子。
2.根据权利要求1所述的连接方法，其特征在于：导电性粒子的平均粒径(μm)为陶瓷基板高度偏差(μm)的35％～100％。
3.根据权利要求1至2中任一项所述的连接方法，其特征在于：各向异性导电膜含有3质量％～20质量％的表面具有有机基的二氧化硅粒子。
4.根据权利要求3所述的连接方法，其特征在于：有机基为乙烯基及丙烯酰基中的任一种。
5.根据权利要求1至4中任一项所述的连接方法，其特征在于：陶瓷基板为照相模块。
6.一种接合体，其特征在于：其是使用权利要求1至5中任一项所述的连接方法而制作。
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