TWI814761B - 接著劑膜 - Google Patents
接著劑膜 Download PDFInfo
- Publication number
- TWI814761B TWI814761B TW107147780A TW107147780A TWI814761B TW I814761 B TWI814761 B TW I814761B TW 107147780 A TW107147780 A TW 107147780A TW 107147780 A TW107147780 A TW 107147780A TW I814761 B TWI814761 B TW I814761B
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive
- adhesive film
- conductive
- conductive particles
- adhesive layer
- Prior art date
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Abstract
本發明於一態樣中提供一種接著劑膜,其依次包括第一接著劑層、金屬層、以及第二接著劑層,並且第一接著劑層及第二接著劑層的各者含有:第一導電粒子,其為枝晶狀的導電粒子;以及第二導電粒子,其為第一導電粒子以外的導電粒子且為具有非導電性的核體及設置於該核體上的導電層的導電粒子。
Description
本發明是有關於一種接著劑膜。
近年來,於半導體、液晶顯示器等領域中,為了固定電子零件、進行電路連接等而使用各種接著劑。於該些用途中,電子零件、電路等的高密度化及高精細化得到推進,從而對接著劑亦要求更高水準的性能。
例如,於液晶顯示器與帶載封裝(Tape Carrier Package,TCP)的連接、柔性印刷電路(Flexible Printed Circuit,FPC)與TCP的連接、或FPC與印刷配線板的連接中,使用在接著劑中分散有導電粒子的接著劑。對此種接著劑而言,要求進一步提高被接著體間的導電性及可靠性。
例如,於專利文獻1中記載了一種導電性膜,其於基材膜上包括含有規定的枝晶(dendrite)狀銀被覆銅粉粒子的導電膜,且揭示了藉由所述導電性膜,即便不調配銀粉亦可獲得充分的導電特性。
[現有技術文獻]
[專利文獻]
[專利文獻1]國際公開第2014/021037號
[發明所欲解決之課題]
且說,最近,根據接著劑膜的應用對象而要求比通常更厚(例如,40 μm以上)的接著劑膜。根據本發明者等人的研究,此種情況下,若僅使先前的接著劑膜變厚,則未必獲得所需的特性。於僅使先前的接著劑膜變厚的情況下,例如於在低壓(例如,0.1 MPa~0.5 MPa)下將電子構件彼此連接時的導電性的方面存在改善的餘地。另一方面,雖考慮到提高電子構件彼此的連接時的壓力來確保導電性(設為規定的連接電阻以下),但該情況下,存在接著劑成分(樹脂成分)被從電子構件間擠出而流出的擔憂。
因此,本發明的目的在於提供一種低壓連接時的導電性優異、且可抑制連接時的接著劑的流出的接著劑膜。
[解決課題之手段]
本發明於一態樣中提供一種接著劑膜,其依次包括第一接著劑層、金屬層、以及第二接著劑層,並且第一接著劑層及第二接著劑層的各者含有:第一導電粒子,其為枝晶狀的導電粒子;以及第二導電粒子,其為第一導電粒子以外的導電粒子且為具有非導電性的核體及設置於該核體上的導電層的導電粒子。
導電層較佳為含有選自由金、鎳及鈀所組成的群組中的至少一種。
金屬層的厚度較佳為25 μm以上。第一接著劑層的厚度較佳為30 μm以下。第二接著劑層的厚度較佳為30 μm以下。
[發明的效果]
根據本發明,可提供一種低壓連接時的導電性優異、且可抑制連接時的接著劑的流出的接著劑膜。
以下,一邊適當地參照圖式,一邊對本發明的實施形態進行詳細說明。
圖1為表示接著劑膜的一實施形態的示意剖面圖。如圖1所示,接著劑膜1依次包括第一接著劑層2、金屬層3、以及第二接著劑層4。第一接著劑層2及第二接著劑層4的各者含有接著劑成分5、以及分散於接著劑成分5中的第一導電粒子6及第二導電粒子7。
以下,對第一接著劑層2及第二接著劑層4(以下,亦將該些總稱為「接著劑層2、4」)進行說明。第一接著劑層2及第二接著劑層4的構成可彼此相同,亦可不同。
接著劑成分5包含例如藉由熱或光而顯示出硬化性的材料,可為環氧系接著劑、自由基硬化型的接著劑、含有聚胺基甲酸酯、聚乙烯酯等的熱塑性接著劑等。就接著後的耐熱性及耐濕性優異的方面而言,接著劑成分5亦可包含交聯性材料。環氧系接著劑含有作為熱硬化性樹脂的環氧樹脂作為主成分。就可實現短時間硬化而連接作業性良好,且接著性優異等方面而言,可較佳地使用環氧系接著劑。自由基硬化型的接著劑具有與環氧系接著劑相比而低溫短時間下的硬化性優異等特徵,因此可根據用途適當地使用。
環氧系接著劑例如含有環氧樹脂(熱硬化性材料)及硬化劑,且視需要可更含有熱塑性樹脂、偶合劑、填充劑等。
作為環氧樹脂,例如可列舉:雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、脂環式環氧樹脂、縮水甘油酯型環氧樹脂、縮水甘油胺型環氧樹脂、乙內醯脲型環氧樹脂、異氰脲酸酯型環氧樹脂、脂肪族鏈狀環氧樹脂等。該些環氧樹脂可經鹵化,亦可經氫化,亦可具有在側鏈加成有丙烯醯基或甲基丙烯醯基的結構。該些環氧樹脂可單獨使用一種或組合使用兩種以上。
作為硬化劑,只要可使環氧樹脂硬化,則並無特別限制,例如可列舉:陰離子聚合性的觸媒型硬化劑、陽離子聚合性的觸媒型硬化劑、複加成型的硬化劑等。該些中,就快速硬化性優異且不需要考慮化學當量的方面而言,較佳為陰離子聚合性或陽離子聚合性的觸媒型硬化劑。
作為陰離子聚合性或陽離子聚合性的觸媒型硬化劑,例如可列舉咪唑、醯肼、三氟化硼-胺錯合物、鎓鹽(芳香族鋶鹽、芳香族重氮鎓鹽、脂肪族鋶鹽等)、胺醯亞胺、二胺基順丁烯腈、三聚氰胺及其衍生物、多胺的鹽、二氰二胺(dicyandiamide)等,亦可使用該些的改質物。作為複加成型的硬化劑,例如可列舉:多胺、聚硫醇、多酚、酸酐等。
該些硬化劑亦可為由聚胺基甲酸酯系、聚酯系等高分子物質、鎳、銅等的金屬薄膜、矽酸鈣等無機物等被覆並經微膠囊化的潛在性硬化劑。潛在性硬化劑可延長使用壽命,因此較佳。硬化劑可單獨使用一種或組合使用兩種以上。
相對於熱硬化性材料以及視需要而調配的熱塑性樹脂的合計量100質量份,硬化劑的含量可為0.05質量份~20質量份。
自由基硬化型的接著劑例如含有自由基聚合性材料及自由基聚合起始劑(亦稱為硬化劑),且視需要可更含有熱塑性樹脂、偶合劑、填充劑等。
作為自由基聚合性材料,例如只要為具有藉由自由基而聚合的官能基的物質,則可無特別限制地使用。具體而言,例如可列舉:丙烯酸酯(亦包含對應的甲基丙烯酸酯;以下相同)化合物、丙烯醯氧基(亦包含對應的甲基丙烯醯氧基;以下相同)化合物、順丁烯二醯亞胺化合物、檸康醯亞胺樹脂、納迪克醯亞胺樹脂等自由基聚合性材料。該些自由基聚合性材料可為單體或寡聚物的狀態,亦可為單體與寡聚物的混合物的狀態。
作為丙烯酸酯化合物,例如可列舉:丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙[4-(丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-(丙烯醯氧基聚乙氧基)苯基]丙烷、丙烯酸二環戊烯基酯、丙烯酸三環癸烷基酯、異氰脲酸三(丙烯醯氧基乙基)酯、丙烯酸胺基甲酸酯、二丙烯酸磷酸酯等。
丙烯酸酯化合物等自由基聚合性材料視需要亦可與對苯二酚、甲基醚對苯二酚等聚合抑制劑一同使用。就提高耐熱性的觀點而言,丙烯酸酯化合物等自由基聚合性材料較佳為具有二環戊烯基、三環癸烷基、三嗪環等取代基的至少一種。作為丙烯酸酯化合物以外的自由基聚合性材料,例如可適宜地使用國際公開第2009/063827號中所記載的化合物。自由基聚合性材料可單獨使用一種或組合使用兩種以上。
作為自由基聚合起始劑,例如只要為藉由加熱或光照射而分解並產生游離自由基的化合物,則可無特別限制地使用。具體而言,例如可列舉過氧化化合物、偶氮系化合物等。該些化合物可根據目標連接溫度、連接時間、適用期等而適當選定。
作為自由基聚合起始劑,更具體而言可列舉:二醯基過氧化物、過氧化二碳酸酯、過氧化酯、過氧化縮酮、二烷基過氧化物、過氧化氫、矽烷基過氧化物等。該些中,較佳為過氧化酯、二烷基過氧化物、過氧化氫、矽烷基過氧化物等,更佳為可獲得高反應性的過氧化酯。作為該些自由基聚合起始劑,例如可適宜地使用國際公開第2009/063827號中所記載的化合物。自由基聚合起始劑可單獨使用一種或組合使用兩種以上。
相對於自由基聚合性材料以及視需要而調配的熱塑性樹脂的合計量100質量份,自由基聚合起始劑的含量可為0.1質量份~10質量份。
環氧系接著劑及自由基硬化型的接著劑中視需要而調配的熱塑性樹脂例如容易將接著劑成形為膜狀。作為熱塑性樹脂,例如可列舉:苯氧基樹脂、聚乙烯縮甲醛樹脂、聚苯乙烯樹脂、聚乙烯丁縮醛樹脂、聚酯樹脂、聚醯胺樹脂、二甲苯樹脂、聚胺基甲酸酯樹脂、聚酯胺基甲酸酯樹脂、酚樹脂、萜烯酚樹脂等。作為熱塑性樹脂,例如可適宜地使用國際公開第2009/063827號中所記載的化合物。該些中,就接著性、相容性、耐熱性、機械強度等優異的方面而言,較佳為苯氧基樹脂。熱塑性樹脂可單獨使用一種或組合使用兩種以上。
關於熱塑性樹脂的含量,於調配至環氧系接著劑中的情況下,相對於熱塑性樹脂及熱硬化性材料的合計量100質量份,可為5質量份~80質量份。關於熱塑性樹脂的含量,於調配至自由基硬化型的接著劑中的情況下,相對於熱塑性樹脂及自由基聚合性材料的合計量100質量份,可為5質量份~80質量份。
作為接著劑成分5的其他例子,可列舉含有熱塑性樹脂、於30℃下為液狀的自由基聚合性材料、以及自由基聚合起始劑的熱自由基硬化型接著劑。熱自由基硬化型接著劑與所述接著劑相比為低黏度。相對於熱塑性樹脂及自由基聚合性材料的合計量100質量份,熱自由基硬化型接著劑中的自由基聚合性材料的含量較佳為20質量份~80質量份,更佳為30質量份~80質量份,進而佳為40質量份~80質量份。
接著劑成分5亦可為含有熱塑性樹脂、於30℃下為液狀的包含環氧樹脂的熱硬化性材料、以及硬化劑的環氧系接著劑。該情況下,相對於熱塑性樹脂及熱硬化性材料的合計量100質量份,環氧系接著劑中的環氧樹脂的含量較佳為20質量份~80質量份,更佳為40質量份~80質量份,進而佳為30質量份~80質量份。
於接著劑膜1用於積體電路(integrated circuit,IC)晶片與玻璃基板、柔性印刷基板(FPC)等的連接的情況下,就抑制由IC晶片與基板的線膨脹係數的差引起的基板的翹曲的觀點而言,接著劑成分5較佳為更含有發揮內部應力的緩和作用的成分。作為所述成分,具體而言可列舉丙烯酸橡膠、彈性體成分等。或者,接著劑成分5亦可為如國際公開第98/44067號中所記載般的自由基硬化型接著劑。
以接著劑層2、4的總體積基準計,接著劑成分5於接著劑層2、4中所佔的體積比例例如可為55體積%以上或65體積%以上,且可為95體積%以下或85體積%以下。
第一導電粒子6呈枝晶狀(亦稱為樹枝狀),包括一根主軸、以及自該主軸二維地或三維地分支的多個枝。第一導電粒子6可由銅、銀等金屬形成,例如可為銅粒子由銀被覆而成的銀被覆銅粒子。
第一導電粒子6可為公知者,具體而言,例如可作為ACBY-2(三井金屬礦業股份有限公司)、CE-1110(福田金屬箔粉工業股份有限公司)、#FSP(JX金屬股份有限公司)、#51-R(JX金屬股份有限公司)等而獲取。或者,第一導電粒子6亦可藉由公知的方法(例如,所述專利文獻1中所記載的方法)來製造。
以接著劑層2、4的總體積基準計,接著劑層2、4中的第一導電粒子6的含量(第一導電粒子6於接著劑層2、4中所佔的體積比例)可為2體積%以上或8體積%以上,且可為25體積%以下或15體積%以下。
第二導電粒子7具有非導電性的核體、以及設置於該核體上的導電層。核體由玻璃、陶瓷、樹脂等非導電性材料形成,較佳為由樹脂形成。作為樹脂,例如可列舉丙烯酸樹脂、苯乙烯樹脂、矽酮樹脂、聚丁二烯樹脂或構成該些樹脂的單體的共聚物。核體的平均粒徑例如可為2 μm~30 μm。
導電層例如由金、銀、銅、鎳、鈀或該些的合金形成。就導電性優異的觀點而言,導電層較佳為含有選自金、鎳及鈀中的至少一種,更佳為含有金或鈀,進而佳為含有金。導電層例如藉由將所述金屬鍍敷於核體而形成。導電層的厚度例如可為10 nm~400 nm。
就可適宜地將膜薄膜化的觀點而言,第二導電粒子7的平均粒徑較佳為30 μm以下,更佳為25 μm以下,進而佳為20 μm以下。第二導電粒子7的平均粒徑例如可為1 μm以上。第二導電粒子7及構成其的核體的平均粒徑可藉由使用雷射繞射・散射法的粒度分佈測定裝置(麥奇克(Microtrac)(製品名,日機裝股份有限公司))來測定。
以接著劑層2、4的總體積基準計,接著劑層2、4中的第二導電粒子7的含量(第二導電粒子7於接著劑層2、4中所佔的體積比例)可為2體積%以上或5體積%以上,且可為20體積%以下或10體積%以下。
接著劑層2、4的厚度例如可為5 μm以上、10 μm以上、或15 μm以上,且可為40 μm以下、30 μm以下、或25 μm以下。
金屬層3例如可由鈦箔、不鏽鋼箔、鎳箔、銅箔、磷青銅箔、黃銅箔(brass foil)、鈹銅箔、鋅白銅箔、36因鋼(invar)箔、42合金(alloy)箔、PB坡莫合金(permalloy)箔、PC坡莫合金箔、科伐合金(kovar)箔、英高鎳(inconel)箔、赫史特合金(hastelloy)箔、莫內爾合金(monel)箔、鎳鉻合金箔、康銅(constantan)箔、錳銅箔、鋁箔、鉭箔、鉬箔、鈮箔、鋯箔、鎢箔、金箔、鉑箔、鈀箔、銀箔、銀焊料箔、錫箔、鉛箔、鋅箔、銦箔、無鉛焊料箔、鐵箔等形成。
金屬層3的厚度例如可為5 μm以上、25 μm以上、30 μm以上或100 μm以上,且可為500 μm以下、300 μm以下、或200 μm以下。
接著劑膜1整體的厚度例如可為40 μm以上、80 μm以上、或180 μm以上,且可為600 μm以下、400 μm以下、或200 μm以下。
接著劑膜1例如可藉由在分別獨立地形成第一接著劑層2以及第二接著劑層4後將該些分別積層於金屬層3的兩面而獲得。第一接著劑層2及第二接著劑層4例如分別可藉由將膏狀的接著劑組成物塗佈於聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)膜等樹脂膜上並進行乾燥而獲得。膏狀的接著劑組成物例如可藉由對包含接著劑成分5、第一導電粒子6、以及第二導電粒子7的混合物進行加熱或者使所述混合物溶解於溶劑中而獲得。作為溶劑,例如可使用常壓下的沸點為50℃~150℃的溶劑。
例如,藉由進行加熱處理而接著劑成分5硬化,藉此接著劑膜1可硬化。加熱溫度例如為40℃~250℃。加熱時間例如為0.1秒~10小時。
可併用加熱及加壓來使接著劑膜1與被接著體接著。加熱溫度例如為50℃~190℃。壓力例如為0.1 MPa~30 MPa。該些加熱及加壓例如可於0.5秒~120秒的範圍內進行。
接著劑膜1可用作使相同種類的被接著體彼此接著的接著劑,另外,亦可用作使不同種類的被接著體(例如,熱膨脹係數不同的被接著體)彼此接著的接著劑。接著劑膜1可適宜地用於電子構件彼此的連接。
圖2為示意性地表示電子構件彼此的連接的一例的主要部分剖面圖。如圖2所示,第一電子構件10與第二電子構件13經由連接構件(電路連接材料)14而彼此電性連接。
第一電子構件10包括第一基板8、以及形成於第一基板8的主表面上的第一電極9。第二電子構件13包括第二基板11、以及形成於第二基板11的主表面上的第二電極12。
第一基板8及第二基板11分別可為由玻璃、陶瓷、聚醯亞胺、聚碳酸酯、聚酯、聚醚碸等形成的基板。第一電極9及第二電極12分別可為由金、銀、銅、錫、鋁、釕、銠、鈀、鋨、銥、鉑、銦錫氧化物(Indium Tin Oxide,ITO)等形成的電極。
連接構件14自第一電子構件10側起依次包括第一硬化層15、金屬層3、以及第二硬化層16。第一硬化層15及第二硬化層16分別為所述接著劑膜1中的第一接著劑層2及第二接著劑層4的硬化物,且包含接著劑成分5的硬化物17、以及分散於該硬化物17中的第一導電粒子6及第二導電粒子7。即,連接構件14是使所述接著劑膜1硬化而成者。
本實施形態的接著劑膜1中,藉由在第一接著劑層2與第二接著劑層4之間設置金屬層3,可使接著劑層2、4變薄並且使接著劑膜1整體變厚。此外,於接著劑層2、4中,藉由併用第一導電粒子6與第二導電粒子7,可實現電子構件彼此的適宜的連接。因此,接著劑膜1即便於其厚度大的情況下,低壓連接時的導電性亦優異且可抑制連接時的接著劑的流出。此外,該接著劑膜1於可靠性的方面而言亦優異。
[實施例]
以下,基於實施例來更具體地說明本發明,但本發明並不限定於以下的實施例。
(溶液A1的製備)
將50 g苯氧基樹脂(聯合碳化物(Union Carbide)股份有限公司製造、製品名:PKHC、重量平均分子量:45000)溶解於甲苯(沸點:110.6℃)與乙酸乙酯(沸點:77.1℃)的混合溶劑(以質量比計甲苯:乙酸乙酯=1:1)中而獲得固體成分40質量%的苯氧基樹脂溶液。於該苯氧基樹脂溶液中,將作為自由基聚合性材料的丙烯酸胺基甲酸酯(根上工業股份有限公司製造、製品名:UN7700)及二甲基丙烯酸磷酸酯(共榮社化學股份有限公司製造、製品名:萊特酯(Light Ester)P-2M)、作為硬化劑的1,1-雙(第三己基過氧化)-3,3,5-三甲基環己烷(日油股份有限公司製造、製品名:波克薩(Perhexa)TMH)以苯氧基樹脂:丙烯酸胺基甲酸酯:二甲基丙烯酸磷酸酯:硬化劑=10:10:3:2的固體質量比進行調配,獲得溶液A1。
作為導電粒子B1(第一導電粒子),使用枝晶狀的導電粒子(銀被覆銅粒子、三井金屬礦業股份有限公司製造、製品名:ACBY-2)。
(導電粒子C1的製作)
首先,於二乙烯基苯、苯乙烯單體及甲基丙烯酸丁酯的混合溶液中投入作為聚合起始劑的過氧化苯甲醯,一邊以高速進行均勻攪拌一邊進行加熱以進行聚合反應,藉此獲得微粒子分散液。藉由將該微粒子分散液過濾並進行減壓乾燥而獲得作為微粒子的凝聚體的塊體。進而,藉由將該塊體粉碎而分別製作交聯密度不同的平均粒子徑20 μm的核體(樹脂粒子)。
其次,使鈀觸媒(室町科技(Muromachi Technos)股份有限公司製造、製品名:MK-2605)載持於所述核體的表面,並利用促進劑(室町科技(Muromachi Technos)股份有限公司製造、製品名:MK-370)使其活性化,將如此形成的核體投入至經加溫至60℃的硫酸鎳水溶液、次磷酸鈉水溶液及酒石酸鈉水溶液的混合液中,進行無電鍍前步驟。將該混合物攪拌20分鐘,確認到氫的發泡停止。繼而,添加硫酸鎳、次磷酸鈉、檸檬酸鈉及鍍敷穩定劑的混合溶液,進行攪拌直至pH穩定,並進行無電鍍後步驟直至氫的發泡停止。接下來,將鍍敷液過濾,利用水對過濾物進行清洗後利用80℃的真空乾燥機進行乾燥,製作經鍍鎳的導電粒子C1(第二導電粒子)。
[實施例1]
<接著劑膜的製作>
使45體積份的導電粒子B1與15體積份的導電粒子C1分散於100體積份的溶液A1中而獲得混合溶液。將所獲得的混合溶液塗佈於厚度80 μm的氟樹脂膜上,並藉由在70℃下進行10分鐘熱風乾燥來去除溶劑,從而獲得形成於氟樹脂膜上的厚度20 μm的膜狀接著劑組成物(第一接著劑層及第二接著劑層)。
其次,於厚度25 μm的銅箔(昆山漢品電子製造、製品名:XPH0A01-025)的其中一個面上層壓第一接著劑層。進而,於銅箔面的另一個面上層壓第二接著劑層,藉此獲得厚度65 μm的接著劑膜。
以如下所示的順序評價於連接構件中使用所獲得的接著劑膜時的特性。
<低壓連接時的導電性的評價>
如圖3(a)、圖3(b)所示,將以6 mm×6 mm對所獲得的接著劑膜進行切出而成的接著劑膜31配置於6 mm×50 mm的銅箔32的大致中央處,並使用大橋製作所股份有限公司製造的BD-07進行加熱加壓(50℃、0.1 MPa、2秒)來加以貼附。接下來,如圖3(c)、圖3(d)所示,準備50 mm×6 mm的鋁箔33。以覆蓋接著劑膜31的方式將鋁箔33重疊於銅箔32與接著劑膜31的積層體上,藉由大橋製作所股份有限公司製造的BD-07進行加熱加壓(150℃、0.1 MPa、10秒),從而獲得低壓連接時的導電性評價用的封裝體。對所獲得的封裝體如圖4所示般連接電流計及電壓計,並藉由四端子法測定連接電阻(初始)。將結果示於表1中。
<接著劑成分的流出抑制的評價>
首先,於以與所述<低壓連接時的導電性的評價>同樣的順序製作封裝體的情況下,對於所得的封裝體,算出與<低壓連接時的導電性的評價>同樣地測定的連接電阻(初始)成為0.20 Ω時所需的壓力(對於銅箔32與接著劑膜31的積層體重疊接著劑膜31並進行加熱加壓時的壓力)P(MPa)。
繼而,以如下所示的順序評價接著劑成分的流出量。即,將所述獲得的接著劑膜連同氟樹脂膜一起切取為3 mm×3 mm的正方形而獲得帶有氟樹脂膜的接著劑膜。將帶有氟樹脂膜的接著劑膜的接著劑膜表面以與松浪硝子製造的四方蓋玻璃(產品編號C018181)接觸的方式放置於蓋玻璃上的大致中央,藉由大橋製作所股份有限公司製造的BD-07進行加熱加壓(60℃、0.1 MPa、2秒)後,剝下氟樹脂膜。接下來,於接著劑膜上進而放置另一枚相同的蓋玻璃,藉由大橋製作所股份有限公司製造的BD-07進行加熱加壓(130℃、所述算出的壓力P(MPa)、10秒)。使用掃描器及圖像處理軟體(Photoshop)(註冊商標)測定剝下的氟樹脂膜的面積[A]與加熱加壓後的接著劑膜的面積[B]作為畫素數,依照下述式算出流出量。將結果示於表1中。
流出量(%)=([B]/[A])×100
<可靠性的評價>
如圖3(a)、圖3(b)所示,將以6 mm×6 mm對所獲得的接著劑膜進行切出而成的接著劑膜31配置於6 mm×50 mm的銅箔32的大致中央處,並使用大橋製作所股份有限公司製造的BD-07進行加熱加壓(50℃、0.5 MPa、2秒)來加以貼附。接下來,如圖3(c)、圖3(d)所示,準備50 mm×6 mm的鋁箔33。以覆蓋接著劑膜31的方式將鋁箔33重疊於銅箔32與接著劑膜31的積層體上,藉由大橋製作所股份有限公司製造的BD-07進行加熱加壓(150℃、0.5 MPa、10秒),從而獲得可靠性評價用的封裝體。
對所獲得的封裝體如圖4所示般連接電流計及電壓計,並藉由四端子法測定連接電阻(初始)。另外,使用愛斯佩克(Espec)股份有限公司製造的TSA-43EL,對封裝體進行將於-20℃下保持30分鐘、歷時10分鐘昇溫至100℃、於100℃下保持30分鐘、歷時10分鐘降溫至-20℃的熱循環重覆500次的熱循環試驗,然後與所述同樣地測定連接電阻(熱循環試驗後)。將結果示於表1中。
[實施例2]
除了將第一接著劑層及第二接著劑層的厚度分別變更為25 μm以外,與實施例1同樣地進行接著劑膜的製作及評價。
[實施例3]
除了將金屬層的厚度變更為30 μm以外,與實施例1同樣地進行接著劑膜的製作及評價。
[比較例1]
除了於第一接著劑層及第二接著劑層中不使用導電粒子B1(第一導電粒子)以外,與實施例1同樣地進行接著劑膜的製作及評價。
[比較例2]
除了於第一接著劑層及第二接著劑層中不使用導電粒子C1(第二導電粒子)以外,與實施例1同樣地進行接著劑膜的製作及評價。
[比較例3]
除了製作並不設置金屬層而僅包含所述接著劑層(厚度65 μm)的接著劑膜以外,與實施例1同樣地進行接著劑膜的製作及評價。
[表1]
1‧‧‧接著劑膜
2‧‧‧第一接著劑層
3‧‧‧金屬層
4‧‧‧第二接著劑層
5‧‧‧接著劑成分
6‧‧‧第一導電粒子
7‧‧‧第二導電粒子
8‧‧‧第一基板
9‧‧‧第一電極
10‧‧‧第一電子構件
11‧‧‧第二基板
12‧‧‧第二電極
13‧‧‧第二電子構件
14‧‧‧連接構件(電路連接材料)
15‧‧‧第一硬化層
16‧‧‧第二硬化層
17‧‧‧硬化物
31‧‧‧接著劑膜
32‧‧‧銅箔
33‧‧‧鋁箔
圖1為表示接著劑膜的一實施形態的示意剖面圖。
圖2為示意性地表示電子構件彼此的連接的一例的主要部分剖面圖。
圖3(a)~圖3(d)為表示實施例中的評價用的封裝體的製作方法的示意圖。
圖4為表示實施例中的連接電阻的測定方法的示意圖。
1‧‧‧接著劑膜
2‧‧‧第一接著劑層
3‧‧‧金屬層
4‧‧‧第二接著劑層
5‧‧‧接著劑成分
6‧‧‧第一導電粒子
7‧‧‧第二導電粒子
Claims (5)
- 一種接著劑膜,用於連接第一電子構件以及第二電子構件,所述第一電子構件具有第一基板以及形成於所述第一基板的主表面上的第一電極,所述第二電子構件具有第二基板以及形成於所述第二基板的主表面上的第二電極,所述第一電子構件與所述第二電子構件以所述第一電極與所述第二電極彼此相向的狀態連接,所述接著劑膜依次包括第一接著劑層、金屬層、以及第二接著劑層,並且所述第一接著劑層及所述第二接著劑層的各者含有:第一導電粒子,其為枝晶狀的導電粒子;以及第二導電粒子,其為所述第一導電粒子以外的導電粒子且為具有非導電性的核體及設置於所述核體上的導電層的導電粒子。
- 如申請專利範圍第1項所述的接著劑膜,其中所述導電層含有選自由金、鎳及鈀所組成的群組中的至少一種。
- 如申請專利範圍第1項或第2項所述的接著劑膜,其中所述金屬層的厚度為25μm以上。
- 如申請專利範圍第1項或第2項所述的接著劑膜,其中所述第一接著劑層的厚度為30μm以下。
- 如申請專利範圍第1項或第2項所述的接著劑膜,其中所述第二接著劑層的厚度為30μm以下。
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