JP2015130426A - 接続方法、及び接合体 - Google Patents
接続方法、及び接合体 Download PDFInfo
- Publication number
- JP2015130426A JP2015130426A JP2014001704A JP2014001704A JP2015130426A JP 2015130426 A JP2015130426 A JP 2015130426A JP 2014001704 A JP2014001704 A JP 2014001704A JP 2014001704 A JP2014001704 A JP 2014001704A JP 2015130426 A JP2015130426 A JP 2015130426A
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- Prior art keywords
- anisotropic conductive
- connection method
- conductive film
- ceramic substrate
- terminal
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Abstract
【解決手段】セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、前記異方性導電フィルム上に前記電子部品を載置する載置工程と、前記電子部品を加熱押圧部材により2MPa未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、前記セラミック基板の高さバラツキが、20μm以上であり、前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が13μm以上の導電性粒子とを含有する接続方法である。
Description
また、接着剤成分とセラミックとの接着力を向上させるために、疎水性シリカ表面がジスルフィド系シランカップリング剤で表面処理されたシリカ粒子を異方性導電フィルムに配合したものが用いられることがある(例えば、特許文献4参照)。
前記端子高さのバラツキは、圧着後のフレキシブル基板に大きな凹凸を形成させることとなり、圧着後に反発力が生じることになる。通常のラジカル重合系の異方性導電接着フィルムでは、凝集力が小さいため、この反発力に抗うことができず、導通抵抗が大きくなり、接続信頼性が低下する恐れがある。
また、近年、電子部品の多様化に伴い、リペア性の要求が高まっているところ、エポキシ系の異方性導電接着フィルムでは、凝集力が大きいため、接続信頼性は優れるが、リペア性が不十分である。
<1> セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、
前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、
前記異方性導電フィルム上に前記電子部品を載置する載置工程と、
前記電子部品を加熱押圧部材により2MPa未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、
前記セラミック基板の高さバラツキが、20μm以上であり、
前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が13μm以上の導電性粒子とを含有することを特徴とする接続方法である。
<2> 導電性粒子の平均粒径(μm)が、セラミック基板の高さバラツキ(μm)の35%〜100%である前記<1>に記載の接続方法である。
<3> 異方性導電フィルムが、表面に有機基を有するシリカ粒子を3質量%〜20質量%含有する前記<1>から<2>のいずれかに記載の接続方法である。
<4> 有機基が、ビニル基及びアクリロイル基のいずれかである前記<3>に記載の接続方法である。
<5> セラミック基板が、カメラモジュールである前記<1>から<4>のいずれかに記載の接続方法である。
<6> 前記<1>から<5>のいずれかに記載の接続方法を用いて作製されたことを特徴とする接合体である。
本発明の接続方法は、貼付工程と、載置工程と、加熱押圧工程とを少なくとも含み、更に必要に応じて、その他の工程を含む。
前記接続方法は、セラミック基板の端子と、電子部品との端子とを異方性導電接続させる接続方法である。
本発明の接合体は、本発明の前記接続方法により製造される。
前記貼付工程としては、セラミック基板の端子上に異方性導電フィルムを貼り付ける工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
前記セラミック基板としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、カメラモジュール、チューナーモジュール、パワーアンプモジュールなどが挙げられる。
前記セラミック基板の高さバラツキは、本発明の接続方法においては、20μm以上である。本発明の接続方法においては、高さバラツキが20μm以上あるセラミック基板を用いても、易リペア性及び接続信頼性に優れる接続方法が得られる。
セラミック基板の高さバラツキは、例えば、表面粗さ計(小坂研究所製、サーフコーダ SE−400)を用いて測定できる。
具体的には、図1に示すような、端子1を有するセラミック基板2に対して、表面粗さ計の触針を、端子1上の図1の矢印の方向に走査させる。そうすると、端子1による凹凸並びにセラミック基板の歪みにより、図2に示すような走査プロファイルが得られる。
得られたプロファイルの大きなうねりの上部と下部との差よりバラツキを測定する。詳しくは、前記上部において短距離で見た時の小さなうねりの上部と、前記下部において短距離で見た時の小さなうねりの上部との差より、セラミック基板の高さバラツキを測定する。
前記異方性導電フィルムは、導電性粒子と、ラジカル重合性物質と、熱ラジカル開始剤とを少なくとも含有し、好ましくはシリカ粒子を含有し、更に必要に応じて、その他の成分を含有する。
前記導電性粒子としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、銅、鉄、ニッケル、金、銀、アルミニウム、亜鉛、ステンレス、ヘマタイト(Fe2O3)、マグネタイト(Fe3O4)、一般式:MFe2O4、MO・nFe2O3(両式中、Mは、2価の金属を表し、例えば、Mn,Co,Ni,Cu,Zn,Ba,Mgなどが挙げられる。nは、正の整数である。そして、前記Mは、繰り返し時において同種であってもよいし、異種であってもよい。)で表される各種フェライト、ケイ素綱粉、パーマロイ、Co基アモルファス合金、センダスト、アルパーム、スーパーマロイ、ミューメタル、パーメンター、パーミンバー等の各種金属粉、その合金粉などが挙げられる。また、アクリル樹脂、アクリロニトリル・スチレン(AS)樹脂、ベンゾグアナミン樹脂、ジビニルベンゼン系樹脂、スチレン系樹脂等の粒子の表面に金属をコートしたもの、あるいは、これらの粒子の表面に更に絶縁薄膜をコートしたもの等が挙げられる。これらの中でも、接続信頼性の点から、アクリル樹脂の粒子の表面をNi−Auコートした粒子がより好ましい。
これらの導電性粒子は、1種単独で使用してもよいし、2種以上を併用してもよい。
また、前記導電性粒子の平均粒径(μm)は、前記セラミック基板の高さバラツキ(μm)の35%〜100%であることが導通確保の点で好ましい。
前記導電性粒子の粒径は、走査型電子顕微鏡(SEM)により測定することができる。前記導電性粒子の粒径について任意の100個を測定した際の算術平均値が、前記平均粒径である。
前記ラジカル重合性物質としては、前記熱ラジカル開始剤の作用によるラジカル重合する物質であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシアクリレート、ウレタンアクリレート、ポリエステルアクリレートなどが挙げられる。
前記ラジカル重合性物質は、1種単独で使用してもよいし、2種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。
前記熱ラジカル開始剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、有機過酸化物などが挙げられる。
前記有機過酸化物としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、パーオキシケタール類、ジアシルパーオキサイド類、パーオキシジカーボネート類、パーオキシエステル類、ジアルキルパーオキサイド類、ハイドロパーオキサイド類、シリルパーオキサイド類などが挙げられる。
前記熱ラジカル開始剤は、1種単独で使用してもよいし、2種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。
前記シリカ粒子としては、特に制限はなく、目的に応じて適宜選択することができるが、有機基を有していることが好ましい。
前記有機基としては、特に制限はなく、目的に応じて適宜選択することができるが、ビニル基、アクリロイル基が、ラジカル重合性物質との反応性の点で好ましい。
前記その他の成分としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、膜形成樹脂、シランカップリング剤などが挙げられる。
前記膜形成樹脂としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、フェノキシ樹脂、ポリエステル樹脂、ポリウレタン樹脂、ポリエステルウレタン樹脂、アクリル樹脂、ポリイミド樹脂、ブチラール樹脂などが挙げられるが、膜形成状態、接続信頼性などの観点からフェノキシ樹脂が好適に挙げられる。
これらの膜形成樹脂は、1種単独で使用してもよいし、2種以上を併用してもよく、また、適宜合成したものであってもよいし、市販品であってもよい。
前記シランカップリング剤としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、エポキシ系シランカップリング剤、アクリル系シランカップリング剤、チオール系シランカップリング剤、アミン系シランカップリング剤などが挙げられる。
前記異方性導電フィルムにおける前記シランカップリング剤の含有量としては、特に制限はなく、目的に応じて適宜選択することができる。
前記載置工程としては、前記異方性導電フィルム上に前記電子部品を載置する工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
通常、この際、異方性導電接続は行われていない。
前記電子部品としては、異方性導電性接続の対象となる、端子を有する電子部品であれば、特に制限はなく、目的に応じて適宜選択することができ、例えば、ICチップ、TABテープ、液晶パネル、フレキシブル基板などが挙げられる。
前記ICチップとしては、例えば、フラットパネルディスプレイ(FPD)における液晶画面制御用ICチップなどが挙げられる。
前記加熱押圧工程としては、前記電子部品を加熱押圧部材により2MPa未満の押圧力で加熱及び押圧する工程であれば、特に制限はなく、目的に応じて適宜選択することができる。
前記加熱の温度としては、特に制限はなく、目的に応じて適宜選択することができるが、140℃〜200℃が好ましい。
前記押圧の圧力としては、2MPa未満であれば、特に制限はなく、目的に応じて適宜選択することができるが、0.5MPa〜1.5MPaが好ましい。
前記加熱及び押圧の時間としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、0.1秒間〜120秒間が挙げられる。
<異方性導電フィルムの作製>
ビスフェノールAフェノキシ樹脂(商品名:YP50、新日鉄住金化学株式会社製)を40質量部、2官能エポキシアクリレート(商品名:3002A、共栄社化学株式会社製)を15質量部、2官能アクリレート(商品名:DCP、新中村化学工業株式会社製)を16質量部、ブタジエン−アクリロニトリルゴム(商品名:XER−91、JSR株式会社製)を15質量部、水酸基含有アクリルゴム(商品名:SG−80H、ナガセケムテックス株式会社製)を4質量部、アクリロイル基表面処理シリカ(商品名:YA010C−SM1、株式会社アドマテックス製)を3質量部、脂肪族系ジアシルパーオキサイド(商品名:パーロイルL、日油株式会社製)を4質量部及び平均粒径15μmのNi/Auメッキアクリル樹脂粒子(日本化学株式会社製)を3質量部を配合した合計100質量部の異方性導電組成物を得た。
得られた異方性導電組成物を、離型PET(ポリエチレンテレフタレート)上に塗布した後、80℃で乾燥し、平均厚み25μmの異方性導電フィルムを得た。
評価基材として、フレキシブルプリント基板(銅配線:ライン/スペース(L/S)=100μm/100μm、端子高さ:12μm、ポリイミド厚み:25μm)とアルミナ製セラミック基板(タングステン配線:ライン/スペース(L/S)=100μm/100μm、配線高さ:10μm、基板厚み:0.4mm)を用い、異方性導電接続を行った。
セラミック基板の端子上に異方性導電フィルムを貼り付け、前記異方性導電フィルム上に前記電子部品を載置し、前記電子部品を加熱押圧部材により、140℃で、10秒間、1MPaの押圧力で加熱及び押圧することにより接合体が得られた。
各接合体について、初期及び温度85℃、湿度85%RH、500hr投入後の接続抵抗値は、デジタルマルチメータ(34401A、アジレント・テクノロジー株式会社製)を用いて測定した。測定方法としては、4端子法を用い、電流1mAを流して行った。
以下の基準で評価した。結果を表1−1に示す。
○:0.2Ω以上0.5Ω未満
△:0.5Ω以上1.0Ω未満
×:1.0Ω以上
各接合体について、フレキシブルプリント基板をセラミック基板から剥がし、IPA(イソプロピルアルコール)を十分に染み込ませた綿棒で接続部を50往復擦り、残存する異方性導電フィルムが剥がれたものを○、剥がれなかったものを×とした。結果を表1−1に示す。
セラミック基板の端子上を、表面粗さ計(小坂研究所製、サーフコーダ SE−400)の触針を走査させ、凹凸のプロファイルを得た。
得られたプロファイルの大きなうねりの上部と下部との差よりバラツキを測定した。詳しくは、前記上部において短距離で見た時の小さなうねりの上部と、前記下部において短距離で見た時の小さなうねりの上部との差より、セラミック基板の高さバラツキを測定した。結果を表1−1に示す。
<異方性導電フィルムの作製、及び接合体の製造>
実施例1において、材料の種類、圧着条件、圧力を表1−1及び表1−2のように変更した以外は、実施例1と同様にして、異方性導電フィルムの作製、及び接合体の製造を行った。
また、実施例1と同様の評価を行った。結果を表1−1及び表1−2に示す。
EP828:エポキシ樹脂(三菱化学株式会社製)
ノバキュア3941HP:硬化剤(旭化成ケミカルズ株式会社製)
3002A:2官能エポキシアクリレート(共栄社化学株式会社製)
DCP:2官能アクリレート(新中村化学工業株式会社製)
XER−91:ブタジエン−アクリロニトリルゴム(JSR株式会社製)
SG−80H:水酸基含有アクリルゴム(ナガセケムテックス株式会社製)
YA010C−SM1:アクリロイル基表面処理シリカ(アドマテックス株式会社製)
YA010C−SV2:ビニル基表面処理シリカ(アドマテックス株式会社製)
YA010C−SP2:フェニル基表面処理シリカ(アドマテックス株式会社製)
R202:シリカ(日本アエロジル株式会社製)
パーロイルL:脂肪族系ジアシルパーオキサイド(日油株式会社製)
Ni/Auメッキアクリル樹脂粒子:平均粒径10μm(日本化学株式会社製)
Ni/Auメッキアクリル樹脂粒子:平均粒径15μm(日本化学株式会社製)
Ni/Auメッキアクリル樹脂粒子:平均粒径20μm(日本化学株式会社製)
2 セラミック基板
Claims (6)
- セラミック基板の端子と、電子部品の端子とを異方性導電接続させる接続方法において、
前記セラミック基板の端子上に異方性導電フィルムを貼り付ける貼付工程と、
前記異方性導電フィルム上に前記電子部品を載置する載置工程と、
前記電子部品を加熱押圧部材により2MPa未満の押圧力で加熱及び押圧する加熱押圧工程と、を含み、
前記セラミック基板の高さバラツキが、20μm以上であり、
前記異方性導電フィルムが、ラジカル重合性物質と、熱ラジカル開始剤と、平均粒径が13μm以上の導電性粒子とを含有することを特徴とする接続方法。 - 導電性粒子の平均粒径(μm)が、セラミック基板の高さバラツキ(μm)の35%〜100%である請求項1に記載の接続方法。
- 異方性導電フィルムが、表面に有機基を有するシリカ粒子を3質量%〜20質量%含有する請求項1から2のいずれかに記載の接続方法。
- 有機基が、ビニル基及びアクリロイル基のいずれかである請求項3に記載の接続方法。
- セラミック基板が、カメラモジュールである請求項1から4のいずれかに記載の接続方法。
- 請求項1から5のいずれかに記載の接続方法を用いて作製されたことを特徴とする接合体。
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KR20210124387A (ko) | 2019-03-08 | 2021-10-14 | 데쿠세리아루즈 가부시키가이샤 | 접속 구조체의 제조 방법, 및 접속 구조체, 그리고 필름 구조체, 및 필름 구조체의 제조 방법 |
KR20230157536A (ko) | 2019-03-08 | 2023-11-16 | 데쿠세리아루즈 가부시키가이샤 | 접속 구조체의 제조 방법, 및 접속 구조체, 그리고 필름 구조체, 및 필름 구조체의 제조 방법 |
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