TWI676266B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI676266B
TWI676266B TW106122792A TW106122792A TWI676266B TW I676266 B TWI676266 B TW I676266B TW 106122792 A TW106122792 A TW 106122792A TW 106122792 A TW106122792 A TW 106122792A TW I676266 B TWI676266 B TW I676266B
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Taiwan
Prior art keywords
semiconductor wafer
wafer
resin
semiconductor
wiring substrate
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TW106122792A
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English (en)
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TW201841346A (zh
Inventor
唐金𧙗次
Yuji Karakane
福田昌利
Masatoshi Fukuda
本間荘一
Soichi Homma
三浦正幸
Masayuki Miura
小牟田直幸
Naoyuki Komuta
赤羽由佳
Yuka Akahane
尾山幸史
Yukifumi Oyama
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東芝記憶體股份有限公司
Toshiba Memory Corporation
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Publication of TW201841346A publication Critical patent/TW201841346A/zh
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Publication of TWI676266B publication Critical patent/TWI676266B/zh

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Abstract

本發明之實施形態提供一種更有效率地利用樹脂將半導體晶片積層體予以密封之半導體裝置及其製造方法。 實施形態之半導體裝置具備：配線基板，其具有第1面；晶片積層體，其位於上述第1面上，且包含第1半導體晶片、設置於上述第1半導體晶片與上述第1面之間且具有貫通電極之第2半導體晶片、及設置於上述第2半導體晶片與上述第1面之間之第3半導體晶片；第1樹脂，其位於上述第1面與上述第3半導體晶片之間，且與上述第1面及上述第3半導體晶片相接；以及第2樹脂，其位於上述第2半導體晶片與上述第1面之間，與上述第2半導體晶片及上述第1面相接而將上述晶片積層體密封，且材料與上述第1樹脂不同。

Description

半導體裝置及其製造方法
本發明之實施形態係關於一種半導體裝置及其製造方法。
對於NAND(Not AND，反及)型快閃記憶體等要求高容量之器件，提出有將半導體晶片呈多段積層並進行樹脂密封之方法。關於各半導體晶片，為了使信號提取之傳輸速度更高速化，利用TSV(Through Silicon VIA，矽穿孔)方式之積層方式受到關注。
本發明之實施形態提供一種更有效率地利用樹脂將半導體晶片積層體密封而成之半導體裝置及其製造方法。 實施形態之半導體裝置具備：配線基板，其具有第1面；晶片積層體，其位於上述第1面上，且包含第1半導體晶片、設置於上述第1半導體晶片與上述第1面之間且具有貫通電極之第2半導體晶片、及設置於上述第2半導體晶片與上述第1面之間之第3半導體晶片；第1樹脂，其位於上述第1面與上述第3半導體晶片之間且與上述第1面及上述第3半導體晶片相接；以及第2樹脂，其位於上述第2半導體晶片與上述第1面之間，與上述第2半導體晶片及上述第1面相接而將上述晶片積層體密封，且材料與上述第1樹脂不同。
(第1實施形態) 以下，參照圖1至圖13，對第1實施形態之半導體裝置進行說明。再者，於以下圖式之記載中，對於相同之部分，以相同之符號表示。其中，圖式中，厚度與平面尺寸之關係、比率等與實際不同，為模式性者。又，於本說明書中，為了方便說明，而使用XYZ正交座標系統。於該座標系統中，將相對於配線基板之主面平行之方向且相互正交之2個方向設為X方向及Y方向，將相對於該等X方向及Y方向之兩者正交之方向設為Z方向(高度方向)。 圖1係表示第1實施形態之半導體裝置之構成之XZ剖面模式圖。圖2係表示相當於圖1之A-A'之半導體裝置之YZ切斷剖面的模式圖。如圖1所示，本實施形態之半導體裝置具備包含支持基板1、半導體晶片2、貫通電極3、邏輯LSI(Large-scale integrated circuit，大規模積體電路)(半導體晶片)4及金屬凸塊5之晶片積層體、配線基板6、及樹脂塑模7。再者，於以下之說明中，將邏輯LSI4設為半導體晶片4。 本實施形態之半導體裝置具有如下構造：於配線基板6上覆晶連接包含支持基板1、半導體晶片2及半導體晶片4之晶片積層體，且包含半導體晶片2及4間之配線基板6上之晶片積層體由樹脂7模塑。樹脂塑模7例如使用環氧樹脂等。 支持基板1具有與配線基板6對向之第1面1a、及與第1面1a相反之面即第2面1b。於支持基板1之第1面1a，經由接著劑11而接著有半導體晶片2-1。 支持基板1例如使用引線框架等金屬板、矽基板、或膜材料等。接著劑11例如包含附模組膠膜。 於半導體晶片2-1之與支持基板1相反之面形成複數個金屬凸塊5，金屬凸塊5電性連接於形成於半導體晶片2-2之貫通電極3。又，同樣地，半導體晶片2-2之貫通電極3經由金屬凸塊5而電性連接於形成於半導體晶片2-3之貫通電極3。於半導體晶片2-3之與配線基板6對向之面形成有未圖示之重配線。半導體晶片2-3之貫通電極3經由金屬凸塊5與半導體晶片4連接。將支持基板1、半導體晶片2及半導體晶片4一併作為晶片積層體。 於半導體晶片4與配線基板6之間具有接著劑12。接著劑12例如使用NCP(Non Conductive Paste，非導電膏)及NCF(Non Conductive Film，非導電膜)。NCP及NCF例如使用包含丙烯酸系樹脂或環氧樹脂之樹脂，但並無特別限定。例如，接著劑12係與樹脂塑模7不同之材料。藉由具有接著劑12，而易於將晶片積層體固定於配線基板上。 半導體晶片2例如包含NAND型快閃記憶體等記憶體晶片。半導體晶片2、4可使用矽基板、SiC或GaN等基板等，但並無特別限定。於本實施形態中，半導體晶片4與半導體晶片2相比，XY平面上之面積較小。 設置於半導體晶片2-2、2-3之貫通電極(Through Silicon Via：TSV)3係將電位或信號傳輸至半導體晶片2-1、2-2。 半導體晶片2與共通之半導體晶片4並聯連接(匯流排連接)。亦即，對藉由貫通電極3而於晶片積層方向形成之共通之資料匯流排，並聯連接有複數個半導體晶片2之資料輸入輸出線。 金屬凸塊5例如使用Au、Ni、Cu、Sn、Bi、Zn、In、或其合金。或者，亦可取代金屬凸塊而使用包含Au、Ni、Cu、Al、Pd、或其合金之電極墊。 本實施形態中之半導體晶片2之數量示出例如3個，但半導體晶片2之數量並無特別限定。又，金屬凸塊5之數量亦無特別限定。 配線基板6具有樹脂製之絕緣層61、及金屬製之配線層62。絕緣層61具有核心層及增層。於配線基板6上，以相對於配線基板6而言半導體晶片4為最近、支持基板1為最遠之方式搭載有晶片積層體。 例如，於圖1中，配線基板6具有晶片積層體之搭載面即第1面6a、及第1面6a之相反面即第2面6b。於配線基板6之第2面6b形成有外部連接端子9。於將半導體裝置用作BGA(Ball Grid Array，球狀柵格陣列)封裝之情形時，對外部連接端子9使用具有焊料球、鍍焊料、鍍Au等之突起端子。於將半導體裝置用作LGA(Land Grid Array，焊盤柵格陣列)封裝之情形時，對外部連接端子9使用金屬焊盤。 於配線基板6之第1面6a設置內部連接端子10。內部連接端子10例如經由焊料凸塊8而連接於除半導體晶片4以外之晶片積層體之最下段之半導體晶片2-3之與第1面6a對向之面的電極墊2-3a。於圖1中，焊料凸塊8例如形成於第1焊料凸塊8a與第2焊料凸塊8b之至少兩個部位。內部連接端子10係於與晶片積層體連接時作為連接部(連接墊)發揮功能者，且經由配線基板6之配線網而與外部連接端子9電性連接。焊料凸塊8之個數並無特別限定，但為了改善連接不良，較理想為設置複數個。 位於配線基板6之第1面6a上之晶片積層體、金屬凸塊5、及焊料凸塊8係整體由樹脂塑模7覆蓋且密封。 再者，如圖1所示，亦可於半導體晶片2間及半導體晶片2與4間設置接著劑13。又，如圖2所示，亦可於與配線基板6之第1面6a對向之半導體晶片2-3與配線基板6之間設置接著劑14。藉由接著劑13及14，半導體晶片2間、及配線基板6與晶片積層體之固定變得牢固，能夠減少位置偏移。 此時，於樹脂之彈性模數或玻璃轉移點(Tg)處於接著劑12＜接著劑13＜樹脂塑模7之大小關係之情形時，能夠進一步抑制樹脂塑模7之界面剝離。進而，於熱膨脹係數處於樹脂塑模7＜接著劑12＜接著劑13之大小關係之情形時，能夠進一步抑制配線基板6之翹曲，從而改善第1及第2焊料凸塊8a、b與配線基板6之連接不良。接著劑13例如使用SA(Spacer Adhesive，間隔膠)。接著劑13例如由包含丙烯酸系樹脂及環氧樹脂等之材料構成。接著劑14例如使用NCP，但並無特別限定。再者，本實施形態之玻璃轉移點係使用DMA(Dynamic Mechanical Analysis，動態力學分析)法進行測定，熱膨脹係數係利用TMA(Thermomechanical Analysis，熱機械分析)法進行測定。彈性模數例如為彎曲彈性模數。 其次，對上述接著劑12及13於配線基板6上之XY平面之佈局進行說明。 圖3(a)～(e)係表示除晶片積層體及樹脂塑模7以外之配線基板6之第1面6a的XY平面圖。將形成第1焊料凸塊8a之區域設為第1焊料凸塊區域8a'，將形成第2焊料凸塊之區域設為第2焊料凸塊區域8b'。進而，以虛線表示供搭載半導體晶片4之區域。 如圖3(a)所示，本實施形態之半導體裝置至少於半導體晶片4與配線基板6之間具有接著劑12。又，此時，如圖3(b)、(d)所示，亦可設置使半導體晶片2與配線基板6接著之接著劑14。接著劑14之個數或配置並無特別限定，例如，接著劑12及接著劑14呈一直線狀位於Y方向上。如圖3(c)所示，接著劑12及接著劑14之數量亦可分別為2個以上，還可於第1及第2焊料凸塊區域8a'、8b'之外側進而設置接著劑14。再者，所謂外側係指於以第1及第2焊料凸塊區域8a'、8b'作為軸之X方向上與半導體晶片4為相反側之區域。另一方面，所謂內側係指於以第1及第2焊料凸塊區域8a'、8b'作為軸之X方向上半導體晶片4側之區域。 上述中，例如，如下關係成立：位於半導體晶片4與配線基板之間之接著劑12之接著面積較位於半導體晶片2與配線基板6之間且設置於第1及第2焊料凸塊區域8a'、8b'之內側之接著劑14之接著面積大。 如圖3(e)所示，於進而設置第3焊料凸塊區域8c，焊料凸塊區域有3個以上之情形時，或者，於半導體晶片4有2個以上之情形時，亦同樣地，上述面積之關係成立。 其中，於圖3中，只要至少於半導體晶片4與配線基板6之間設置接著劑12即可，焊料凸塊區域及接著劑之位置、個數、面積等並無特別限定。 根據本實施形態之半導體裝置，藉由在晶片積層體與配線基板之間局部地設置接著劑12(及14)，能夠抑制配線基板6之翹曲，從而抑制焊料凸塊8與配線基板之連接不良。進而，能夠減少樹脂塑模7於半導體晶片4表面之界面剝離。 其次，使用圖4至圖10，對本實施形態之半導體裝置之第1製造方法進行說明。 圖4係以製造步驟順序表示本實施形態之半導體裝置之第1製造方法的流程圖。圖5～圖8係以步驟順序表示製造步驟之半導體裝置之XZ剖視圖。 如圖5(a)所示，於預先形成有金屬凸塊5之半導體晶片2-1之與形成有金屬凸塊5之面為相反側之面設置接著劑11，並使接著劑11接著於支持基板1之第1面1a(S-1)。此時，亦可預先於支持基板1形成接著劑11。 其次，如圖5(b)所示，將預先形成有貫通電極3且具有金屬凸塊5之半導體晶片2-2積層於半導體晶片2-1上(S-2)。貫通電極3之形成係例如藉由BSV(Back Side VIA，背側通過)方式之晶圓製程進行。再者，所謂BSV方式係如下方法：於基板表面形成具有配線之LSI及表電極，自基板背面朝向配線形成孔，並將金屬埋入至孔中，藉此形成TSV。 此處，以形成於半導體晶片2-2之貫通電極3與形成於半導體晶片2-1之金屬凸塊5於相對於支持基板1大致垂直之Z軸上下重疊之方式進行積層。以相同之方式將具有貫通電極3之半導體晶片2-3積層於半導體晶片2-2上(圖6(a))。於半導體晶片2-3，例如於與半導體晶片2-2為相反側之面具有重配線(未圖示)及電極墊2-3a。再者，亦可使用如下方法：於半導體晶片2之積層中，不於半導體晶片2-1預先形成金屬凸塊5，而於半導體晶片2-2及2-3之與支持基板1對向之面預先形成金屬凸塊5，且如上所述般使其等積層。 其次，如圖6(b)所示，將形成有金屬凸塊5之半導體晶片4積層於半導體晶片2-3上(S-3)。此時，例如以金屬凸塊5位於半導體晶片2-3之貫通電極3上之方式搭載。再者，亦可於半導體晶片2-3之與配線基板6對向之面形成重配線。於該情形時，於重配線上搭載金屬凸塊5。以此方式完成晶片積層體。其後，進行第1回焊(還原回焊)(S-4)。 於上述晶片積層體中，於第1回焊前使各個半導體晶片2積層時之溫度係以未達金屬凸塊5之熔融溫度進行，藉此，使半導體晶片間不機械性地連接。藉此，於積層半導體晶片2時，降低因反覆進行金屬凸塊5之熔融及凝固使得金屬凸塊5變脆、從而半導體晶片2之連接部斷裂之虞。 其次，如圖7(a)、(b)所示，於具有配線之配線基板6之第1面6a之內部連接端子10上形成第1及第2焊料凸塊8a、8b及接著劑12(S-5)，將利用上述方法製造而成之晶片積層體覆晶安裝於第1面6a(S-6)。此時，使形成於半導體晶片2-3之電極墊2-3a及配線基板6上之焊料凸塊8與配線基板6重疊。將半導體晶片4經由接著劑12而接著於配線基板6。再者，進行覆晶安裝時之溫度，亦能夠以未達形成於配線基板6之第1及第2焊料凸塊8a、8b之熔融溫度進行。 於將接著劑14設置於半導體晶片2與配線基板6之間之情形時，於配線基板6上形成接著劑12之同時進行接著劑14之形成。 其次，將搭載有晶片積層體之配線基板6於還原氣氛內進行加熱，使半導體晶片之金屬凸塊5及配線基板6之焊料凸塊8熔融，而進行第2回焊(S-7)。藉此，使晶片積層體與配線基板6電性連接。 其次，如圖8所示，利用樹脂塑模7將亦包含半導體晶片2之間及晶片積層體與配線基板6之間在內之配線基板6上整個密封(S-8)。 如圖9所示，於配線基板6之第2面6b形成外部連接端子9。最後，進行半導體裝置之片段化(單片化)(未圖示)。 以上述方式完成利用本實施形態之第1製造方法之半導體裝置。 根據第1製造方法之半導體裝置之製造方法，藉由在配線基板6上形成接著劑12，與不形成接著劑12之情形相比，能夠將晶片積層體更穩定地固定於配線基板6。又，由於在半導體晶片4與配線基板6之間預先形成接著劑12，故而與無接著劑12之情形相比，能夠降低樹脂塑模7難以填充而產生間隙從而變得密接不良之可能性。進而，於形成晶片積層體之後，能夠不利用底部填充劑等將樹脂先填充至晶片間，而整個地將整體進行樹脂密封。因此，能夠削減步驟數。 以下，於第1製造方法中，如圖10所示，亦有不進行第1回焊之方法。於該情形時，取代第1回焊而於半導體晶片2間及半導體晶片2與4之間設置接著劑13，藉此將晶片積層體固定。接著劑13係於積層半導體晶片2及4時設置於晶片間(S-2、3)。接著劑13係於被塗佈至半導體晶片之後，藉由光微影步驟而形成。於圖10所示之流程中，將利用接著劑13而固定之晶片積層體覆晶安裝於配線基板6之後進行最初之回焊(S-6)。藉此，由於回焊次數變為1次，故而能夠進一步削減步驟數。 再者，於按照圖4所示之流程圖進行製造之情形時，亦可設置接著劑13，而將晶片積層體進一步固定。 其次，使用圖11至圖13，對本實施形態之半導體裝置之第2製造方法進行說明。 圖11係以製造步驟順序表示本實施形態之半導體裝置之第2製造方法的流程圖。圖12及圖13係表示製造步驟之一部分之半導體裝置之XZ剖視圖。再者，關於與第1製造方法相同之部分，省略其說明。 如圖12(a)所示，與第1製造方法同樣地形成進行第1回焊之前之晶片積層體(S-1～S-3)。此時，亦可於半導體晶片2間、及半導體晶片2與4之間設置接著劑13。 其次，如圖12(b)所示，於半導體晶片4塗佈接著劑12(S-4)。亦可視需要亦於半導體晶片2塗佈接著劑12。 繼而，如圖13所示，將塗佈有接著劑12之晶片積層體覆晶安裝於預先形成有焊料凸塊8之配線基板6(S-6)。 第2製造方法中，於將晶片積層體安裝於配線基板6時，將配線基板6設定為接著劑12之硬化溫度。因此，晶片積層體與配線基板6被接著劑12固定。其後，藉由回焊將配線基板6與晶片積層體電性連接(S-7)。最後，與第1製造方法同樣地，利用樹脂塑模7將配線基板6上整個地整體密封(S-8)，從而完成第2製造方法之半導體裝置。 根據第2製造方法之半導體裝置之製造方法，具有與第1製造方法相同之效果，進而，於在晶片積層體上直接塗佈接著劑12之後，將其安裝至配線基板6上，因此於覆晶安裝時能夠將配線基板6設定為接著劑12之硬化溫度。例如，於將接著劑12直接塗佈於配線基板6上之情形時，若將配線基板6設為接著劑12之硬化溫度，則有於安裝晶片積層體之前接著劑12硬化而無法進行配線基板6與晶片積層體之固定之虞。因此，必須於不提昇配線基板6之溫度之情況下使晶片積層體之溫度上升，由於對晶片積層體施加負載，除此以外，自支持基板1側提昇晶片積層體之溫度，故而至接著劑12達到硬化溫度為止需花費時間。再者，對於晶片積層體之負載係例如因溫度上升所致之半導體晶片2間之接著劑13或金屬凸塊5之變形。 以上，根據第2製造方法之半導體裝置之製造方法，能夠進行晶片積層體之安裝時間較短且進一步提高可靠性之半導體裝置之製造。 再者，第1及第2製造方法中所示之半導體裝置之剖視圖係一例，接著劑之個數等並無特別限定。 (第2實施形態) 其次，一面參照圖14至圖16，一面對第2實施形態進行說明。 第2實施形態與第1實施形態相比，於不使用支持基板之方面不同。再者，除此以外之構成及製造方法與第1實施形態相同。 圖14係表示第2實施形態之半導體裝置之構成之剖視圖。如圖14所示，本實施形態之半導體裝置與第1實施形態相比，不使用支持基板。亦即，配線基板上之晶片積層體之最上段(Z軸上段)成為半導體晶片2-1。再者，其他構成由於與第1實施形態相同，故而省略其說明。又，於圖14之半導體裝置中，亦可於半導體晶片2及4間設置接著劑13，還可於半導體晶片2與配線基板6之間設置接著劑14。 如圖15(a)所示，第2實施形態之半導體裝置之製造方法係於預先形成有金屬凸塊5之半導體晶片2-1上積層預先形成有貫通電極3及金屬凸塊5之半導體晶片2-2。此時，以於相對於半導體晶片2-1大致垂直之Z軸方向上，半導體晶片2-1之金屬凸塊5與半導體晶片2-2之貫通電極3之位置重疊之方式進行積層。其後之步驟由於與第1實施形態相同，故而省略說明。再者，如圖15(b)所示，亦可於半導體晶片2之間及半導體晶片2與4之間設置接著劑13。又，亦可於半導體晶片2與配線基板6之間設置接著劑14。 以上，根據本實施形態之半導體裝置，具有與第1實施形態相同之效果，進而，與第1實施形態相比，能夠於不使用支持基板之情況下形成晶片積層體，故而削減了步驟數及費用。 其次，一面參照圖16，一面對第2實施形態之另一製造方法進行說明。 另一製造方法與第1實施形態之製造方法相比，於使用帶材料之方面不同。再者，除此以外之方法與第1實施形態相同。 如圖16(a)所示，準備具有接著性之帶材料100，且使形成有金屬凸塊之半導體晶片2-1接著於帶材料100之上。關於帶材料100，例如只要為單面具有接著性者，則其形狀或材質不限。其後，與第1實施形態同樣地形成晶片積層體。其後，使帶材料100自晶片積層體剝離。帶材料100之剝離例如係使用拾取工具A及吸附工具B等。 於圖16(b)中示出使用拾取工具A及吸附工具B之帶材料100之剝離方法。利用拾取工具A將晶片積層體向上推，同時利用吸附工具B吸附晶片積層體之半導體晶片4，藉此能夠使帶材料100自晶片積層體剝離。再者，此時被吸附之半導體晶片亦可為半導體晶片2。其後之製造方法如第1實施形態所示。 以上，根據本實施形態之半導體裝置之另一製造方法，具有與第1實施形態相同之效果，進而，與第1實施形態相比，由於在之後使帶材料剝離，故而能夠削減半導體裝置之面積。 對本發明之若干個實施形態進行了說明，但該等實施形態係作為示例而提出者，並非意圖限定發明之範圍。該等新穎之實施形態能以其他各種形態實施，且能夠於不脫離發明主旨之範圍內進行各種省略、替換、變更。該等實施形態或其變化包含於發明之範圍或主旨中，並且包含於申請專利範圍所記載之發明及其均等之範圍內。 [相關申請案] 本申請案享有以日本專利申請案2017-46390號(申請日：2017年3月10日)作為基礎申請案之優先權。本申請案藉由參照該基礎申請案而包含基礎申請案之全部內容。
1‧‧‧支持基板
1a‧‧‧第1面
1b‧‧‧第2面
2‧‧‧半導體晶片
2-1‧‧‧半導體晶片
2-2‧‧‧半導體晶片
2-3‧‧‧半導體晶片
2-3a‧‧‧電極墊
3‧‧‧貫通電極
4‧‧‧邏輯LSI(半導體晶片)
5‧‧‧金屬凸塊
6‧‧‧配線基板
6a‧‧‧第1面
6b‧‧‧第2面
7‧‧‧樹脂塑模
8a‧‧‧焊料凸塊
8a'‧‧‧第1焊料凸塊區域
8b‧‧‧焊料凸塊
8b'‧‧‧第2焊料凸塊區域
8c‧‧‧第3焊料凸塊區域
9‧‧‧外部連接端子
10‧‧‧內部連接端子
11‧‧‧接著劑(樹脂)
12‧‧‧接著劑(樹脂)
13‧‧‧接著劑(樹脂)
14‧‧‧接著劑(樹脂)
61‧‧‧絕緣層
62‧‧‧配線層
100‧‧‧帶材料
A‧‧‧拾取工具
B‧‧‧吸附工具
S-1～S-8‧‧‧步驟
X‧‧‧方向
Y‧‧‧方向
Z‧‧‧方向
圖1係表示第1實施形態之半導體裝置之構成之剖視圖。圖2係表示第1實施形態之半導體裝置之構成之剖視圖。圖3(a)～(e)係說明第1實施形態之半導體裝置之平面佈局之圖。圖4係說明第1實施形態之半導體裝置之第1製造方法之流程圖。圖5(a)及(b)係說明第1實施形態之半導體裝置之第1製造方法之圖。圖6(a)及(b)係說明第1實施形態之半導體裝置之第1製造方法之圖。圖7(a)及(b)係說明第1實施形態之半導體裝置之第1製造方法之圖。圖8係說明第1實施形態之半導體裝置之第1製造方法之圖。圖9係說明第1實施形態之半導體裝置之第1製造方法之圖。圖10係說明第1實施形態之半導體裝置之另一製造方法之流程圖。圖11係說明第1實施形態之半導體裝置之第2製造方法之流程圖。圖12(a)及(b)係說明第1實施形態之半導體裝置之第2製造方法之圖。圖13係說明第1實施形態之半導體裝置之第2製造方法之圖。圖14係表示第2實施形態之半導體裝置之構成之圖。圖15(a)及(b)係說明第2實施形態之半導體裝置之製造方法之圖。 圖16(a)及(b)係說明第2實施形態之變化例之圖。

Claims (10)

  1. 一種半導體裝置，其具備：配線基板，其具有第1面；晶片積層體，其位於上述第1面上，且包含第1半導體晶片、設置於上述第1半導體晶片與上述第1面之間且具有貫通電極之第2半導體晶片、及設置於上述第2半導體晶片與上述第1面之間之第3半導體晶片；第1樹脂，其位於上述第1面與上述第3半導體晶片之間，且與上述第1面及上述第3半導體晶片相接；以及第2樹脂，其位於上述第2半導體晶片與上述第1面之間，與上述第2半導體晶片及上述第1面相接而將上述晶片積層體密封，且材料與上述第1樹脂不同。
  2. 如請求項1之半導體裝置，其中於上述第1半導體晶片與上述第2半導體晶片之間具有第3樹脂，該第3樹脂與上述第1及第2半導體晶片相接，且材料與上述第2樹脂不同。
  3. 如請求項1或2之半導體裝置，其中於上述第2半導體晶片與上述第1面之間具有第4樹脂，該第4樹脂與上述第2半導體晶片及上述第1面相接，且材料與上述第2樹脂不同。
  4. 如請求項2之半導體裝置，其中於上述第1、第2及第3樹脂中，彈性模數或玻璃轉移點之任一者為第1樹脂<第3樹脂<第2樹脂。
  5. 如請求項2之半導體裝置，其中於上述第1、第2及第3樹脂中，熱膨脹係數為第2樹脂<第1樹脂<第3樹脂。
  6. 一種半導體裝置之製造方法，其係於第1半導體晶片之第1面上，經由第1凸塊電極將具有貫通電極之第2半導體晶片以上述第1凸塊電極與上述貫通電極重疊之方式積層，於上述第2半導體晶片上，以上述貫通電極與第2凸塊電極重疊之方式經由上述第2凸塊電極使第3半導體晶片積層而形成晶片積層體，於配線基板之第2面形成第1樹脂，一面使上述第1樹脂與上述第3半導體晶片接著，一面經由第3凸塊電極將上述晶片積層體搭載於上述配線基板之第2面，藉由回焊將上述配線基板與上述晶片積層體電性連接，將上述第2面上及上述第1、第2及第3半導體晶片間樹脂密封。
  7. 一種半導體裝置之製造方法，其係於第1半導體晶片之第1面上，經由第1凸塊電極將具有貫通電極之第2半導體晶片以上述第1凸塊電極與上述貫通電極重疊之方式積層，於上述第2半導體晶片上，以上述貫通電極與第2凸塊電極重疊之方式經由上述第2凸塊電極使第3半導體晶片積層而形成晶片積層體，於上述第3半導體晶片之與上述第2凸塊電極所在之面相反之面形成第1樹脂，將形成有上述第1樹脂之上述晶片積層體以上述第1樹脂接著於配線基板之第2面之方式搭載，藉由回焊將上述配線基板與上述晶片積層體電性連接，將上述第2面上及上述第1、第2及第3半導體晶片間樹脂密封。
  8. 如請求項6或7之半導體裝置之製造方法，其中於將上述晶片積層體搭載於上述配線基板之第2面之前，進行上述晶片積層體之回焊，使上述貫通電極與上述第1及第2凸塊電極分別電性連接。
  9. 如請求項6或7之半導體裝置之製造方法，其中於上述第1半導體晶片與上述第2半導體晶片之間，設置與上述第1及第2半導體晶片相接之第2樹脂。
  10. 如請求項6或7之半導體裝置之製造方法，其中於上述第2半導體晶片與上述配線基板之第2面之間，設置與上述第2半導體晶片及上述配線基板之第2面相接之第3樹脂。
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