TWI620293B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TWI620293B
TWI620293B TW105144001A TW105144001A TWI620293B TW I620293 B TWI620293 B TW I620293B TW 105144001 A TW105144001 A TW 105144001A TW 105144001 A TW105144001 A TW 105144001A TW I620293 B TWI620293 B TW I620293B
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Taiwan
Prior art keywords
wafer
electrode
semiconductor
semiconductor wafer
manufacturing
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TW105144001A
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English (en)
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TW201810566A (zh
Inventor
Yuji Karakane
Masatoshi Fukuda
Soichi Homma
Naoyuki Komuta
Yukifumi Oyama
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Toshiba Memory Corp
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Publication of TW201810566A publication Critical patent/TW201810566A/zh
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Publication of TWI620293B publication Critical patent/TWI620293B/zh

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Abstract

本發明之實施形態提供一種更高效地以樹脂密封半導體晶片積層體之半導體裝置之製造方法。 實施形態之半導體裝置之製造方法係於具有第1凸塊電極之第1半導體晶片之第1面上，使具有第2凸塊電極及第1貫通電極之第2半導體晶片，以上述第1凸塊電極與上述第1貫通電極重疊之方式積層，於上述第2半導體晶片上，使具有第2貫通電極之第3半導體晶片，以上述第2凸塊電極與上述第2貫通電極重疊之方式積層而形成晶片積層體，且將上述晶片積層體之上述第1及第2凸塊電極，藉由回流焊而機械性連接於上述第1及第2貫通電極，於具有第2面之第1基板上，以上述第1面朝向上述第2面側之方式搭載上述晶片積層體，將上述第2面上及上述第1、第2及第3半導體晶片間以樹脂密封。

Description

半導體裝置之製造方法
本發明之實施形態係關於一種半導體裝置之製造方法。
於NAND(NOR-AND：與非)型快閃記憶體等要求高容量之器件中，已有提出將半導體晶片多段積層且樹脂密封之方法。各半導體晶片為使信號提取之傳遞速度更高速化，以利用TSV(Through Silicon VIA：矽穿孔)方式之積層方式受到關注。
本發明之實施形態提供一種更高效地以樹脂密封半導體晶片積層體之半導體裝置之製造方法。 實施形態之半導體裝置之製造方法係於具有第1凸塊電極之第1半導體晶片之第1面上，使具有第2凸塊電極及第1貫通電極之第2半導體晶片以上述第1凸塊電極與上述第1貫通電極重合之方式積層，於上述第2半導體晶片上，使具有第2貫通電極之第3半導體晶片以上述第2凸塊電極與上述第2貫通電極重合之方式積層而形成晶片積層體，將上述晶片積層體之上述第1及第2凸塊電極藉由回流焊而機械性連接於上述第1及第2貫通電極，於具有第2面之第1基板上，以上述第1面朝向上述第2面側之方式搭載上述晶片積層體，將上述第2面上及上述第1、第2及第3半導體晶片間樹脂密封。
(第1實施形態) 以下，參照圖1至圖7對第1實施形態之半導體裝置進行說明。另，於以下之圖式之記載中，對相同之部分以相同之符號表示。惟圖式為示意性者，厚度與平面尺寸之關係、比例等與實物不同。 圖1係顯示第1實施形態之半導體裝置之構成之剖視圖。如圖1所示，本實施形態之半導體裝置具備包含支持基板1、半導體晶片2、貫通電極3、半導體晶片4(邏輯LSI(Large-scale integrated circuit：大型積體電路))及金屬凸塊5之晶片積層體、配線基板6、及樹脂模具7。 本實施形態之半導體裝置係於配線基板6上覆晶連接包含支持基板1及半導體晶片2之晶片積層體，且以樹脂模塑包含半導體晶片2間在內之配線基板6上之晶片積層體。 支持基板1具有與配線基板6對向之第1面1a、及第1面1a之相反面即第2面1b。於支持基板1之第1面1a，經由接著劑11而接著有半導體晶片2-1。 支持基板1使用例如引線框架等金屬板、矽基板或膜片材料等。接著劑11包含例如晶粒接合膜(die attach film)。 於半導體晶片2-1之與支持基板1相反之面，形成複數個金屬凸塊5，金屬凸塊5係電性連接於形成於半導體晶片2-2之貫通電極3。又，同樣地，半導體晶片2-2之貫通電極3經由金屬凸塊5，而電性連接於形成於半導體晶片2-3之貫通電極3。於半導體晶片2-3之配線基板6側之面上形成有未圖示之再配線。半導體晶片2-3之貫通電極3經由金屬凸塊5而與半導體晶片4電性連接。將支持基板1、半導體晶片2及半導體晶片4合起來成為晶片積層體。 半導體晶片2包含例如NAND型快閃記憶體等記憶體晶片。半導體晶片2、4可使用矽基板、SiC或GaN等基板等，並不特別限定。 設置於半導體晶片2-2、2-3之貫通電極(Through Silicon Via：TSV)3，向半導體晶片2-1、2-2傳送電位或信號。 半導體晶片2與共通之半導體晶片4並聯連接(匯流排連接)。即，對利用貫通電極3而於晶片積層方向形成之共通之資料匯流排，並聯連接有複數條半導體晶片2之資料輸入輸出線。 金屬凸塊5例如使用Au、Ni、Cu、Sn、Bi、Zn、In或其合金。此外，亦可取代金屬凸塊而使用包含Au、Ni、Cu、Al、Pd或其合金之電極墊。 本實施形態之半導體晶片2之個數例如顯示3個，但半導體晶片2之個數並不特別限定。又，金屬凸塊5之個數亦不特別限定。 配線基板6具有樹脂製之絕緣層61及金屬製之配線層62。絕緣層61具有芯層與增層。於配線基板6上，以相對於配線基板6而言半導體晶片4為最近、支持基板1為最遠之方式搭載晶片積層體。 例如於圖1中，配線基板6具有晶片積層體之搭載面即第1面6a、及第1面6a之相反面即第2面6b。於配線基板6之第2面6b形成有外部連接端子9。於將半導體裝置作為BGA(Ball Grid Array：球柵陣列)封裝使用之情況下，外部連接端子9使用具有焊球、焊料鍍覆、鍍Au等之突起端子。於將半導體裝置作為LGA(Land Grid Array：平面柵格陣列)封裝使用之情況下，外部連接端子9使用金屬焊點。 於配線基板6之第1面6a設置內部連接端子10。內部連接端子10例如經由焊料凸塊8等而連接於電極墊2-3a，該電極墊2-3a係設置於除半導體晶片4以外之晶片積層體之最下段之半導體晶片2-3之第1面6a側之面上。內部連接端子10於與晶片積層體連接時作為連接部(連接墊)發揮功能，且經由配線基板6之配線網而與外部連接端子9電性連接。 將位於配線基板6之第1面6a上之晶片積層體、金屬凸塊5及焊料凸塊8整體，以樹脂模具7覆蓋而密封。 另，如圖2所示，亦可於半導體晶片2及4間設置接著劑12，以及於配線基板6與晶片積層體之間設置接著劑13。由此，半導體晶片2間、以及配線基板6與晶片積層體之連接變得牢固，而能夠減少偏移。 其次，就本實施形態之半導體裝置之製造方法進行說明。 圖3至圖7係依製造步驟順序顯示本實施形態之半導體裝置之製造方法之剖視圖。 如圖3(a)所示，於形成有金屬凸塊5之半導體晶片2-1之與形成有金屬凸塊5之面(第1面)為相反側之面上設置接著劑11，而使該半導體晶片2-1接著於支持基板1之第1面1a。 接著，如圖3(b)所示，將預先形成有貫通電極3且具有金屬凸塊5之半導體晶片2-2，積層於半導體晶片2-1上。貫通電極3之形成例如係利用BSV(Back Side VIA：背側通孔)方式之晶圓製程而進行。另，所謂BSV方式係指如下方法：於基板正面形成具有半導體元件與配線之LSI及表電極，且自基板背面朝向配線形成孔洞，於孔洞內埋入金屬，藉此形成TSV。 此處，以形成於半導體晶片2-2之貫通電極3，與形成於半導體晶片2-1之金屬凸塊5沿相對於支持基板1大致垂直之Z軸上下重疊之方式積層。以相同方式將具有貫通電極3之半導體晶片2-3，積層於半導體晶片2-2上(圖4(a))。於半導體晶片2-3之例如與半導體晶片2-2為相反側之面上，具有再配線(未圖示)與電極墊2-3a。另，於半導體晶片2之積層中，亦可使用如下方法：不預先於半導體晶片2-1形成金屬凸塊5，而於半導體晶片2-2及2-3之支持基板1側之面上預先形成金屬凸塊5，且如上述般積層。 接著，如圖4(b)所示，將形成有金屬凸塊5之半導體晶片4積層於半導體晶片2-3上。此時，以例如金屬凸塊5位於半導體晶片2-3之貫通電極3上之方式搭載。另，亦可於半導體晶片2-3之與配線基板6對向之面上形成再配線。於此情況下，於再配線上搭載金屬凸塊5。以此方式完成晶片積層體。 於上述之晶片積層體中，於使各個半導體晶片2積層時之溫度小於金屬凸塊5之熔融溫度下進行，由此使半導體晶片間不機械性連接。由此，於積層半導體晶片時，能夠減少因為反復進行金屬凸塊5之熔融或凝固而導致金屬凸塊5變脆，導致半導體晶片2之連接部斷裂之疑慮。 另，因為如上述般於製造中途不將半導體晶片2間之金屬凸塊5機械性連接，故有於製造步驟中，於半導體晶片2之上下重疊之金屬凸塊5彼此產生位置偏移之疑慮。因此，為防止位置偏移，較佳於積層所有的半導體晶片而形成晶片積層體後且進行樹脂密封之前，進行晶片積層體之還原回流焊。此外，亦可使用如圖2所示般預先於半導體晶片2之表面形成接著劑(具有接著性之樹脂)12，使用接著劑12使半導體晶片之間固定之方法。 接著，如圖5所示，於具有配線之配線基板6之第1面6a之內部連接端子10上形成焊料凸塊8，且將如上述般製造之晶片積層體覆晶安裝於第1面6a。此時，使形成於半導體晶片2-3之電極墊2-3a與配線基板6上之焊料凸塊8與配線基板6重合。又，亦可於覆晶安裝時之溫度小於形成於配線基板6之焊料凸塊8之熔融溫度下進行。 另，亦可使用如下方法：於安裝晶片積層體之前，於配線基板6上預先形成接著劑13，且如圖2所示般使晶片積層體與配線基板6固定。 接著，將搭載有晶片積層體之配線基板6於還原氣氛中加熱，而使半導體晶片之金屬凸塊5及配線基板6之焊料凸塊8熔融。由此，使半導體晶片2之間及晶片積層體與配線基板6電性連接。 接著，如圖6所示，將包含半導體晶片2之間及晶片積層體與配線基板6之間在內之配線基板6上利用轉注成型以樹脂模具7整個密封。 如圖7所示，於配線基板6之第2面6b形成外部連接端子9。最後，將半導體裝置進行斷片(去框)(未圖示)。 以如上所述之方式完成本實施形態之半導體裝置。 根據本實施形態之半導體裝置之製造方法，於形成晶片積層體後，無需以底部填充劑等先於晶片間填充樹脂，可利用轉注成型將整體樹脂整個密封，因此能夠削減步驟數。 此外，於形成晶片積層體時，因為於將所有半導體晶片積層之後藉由曝露於還原氣氛中而先使金屬凸塊與貫通電極連接，故能夠減少因為反復進行金屬凸塊之熔融及凝固而導致金屬凸塊變脆，從而致使半導體晶片之連接部斷裂之疑慮。 (第2實施形態) 其次，一邊參照圖8及圖9一邊就第2實施形態進行說明。 第2實施形態與第1實施形態相比，不同點在於不使用支持基板，除此以外與第1實施形態相同。 圖8係顯示第2實施形態之半導體裝置之構成之剖視圖。如圖8所示，本實施形態之半導體裝置與第1實施形態相比不使用支持基板。即，配線基板上之晶片積層體之最上段為半導體晶片2-1。另，其他構成因為與第1實施形態相同，故省略其說明。 第2實施形態之半導體裝置之製造方法係如圖9(a)所示般於預先形成有金屬凸塊5之半導體晶片2-1上，積層預先形成有貫通電極3及金屬凸塊5之半導體晶片2-2。此時，於相對於半導體晶片2-1大致垂直之Z軸方向上，以半導體晶片2-1之金屬凸塊5與半導體晶片2-2之貫通電極3之位置重合之方式積層。隨後之步驟與第1實施形態相同故省略說明。另，亦可如圖9(b)所示，於半導體晶片2及4間、以及晶片積層體與配線基板6之間使用接著劑12、13。 以上，根據本實施形態之半導體裝置，具有與第1實施形態相同之效果，且進而與第1實施形態相比無需使用支持基板即可形成晶片積層體，故能夠削減步驟數及成本。 其次，一邊參照圖10，一邊對第2實施形態之另一製造方法進行說明。 另一製造方法與第2實施形態之製造方法相比，不同點在於使用帶件材料。另，除此以外與第2實施形態相同。 如圖10(a)所示，準備具有接著性之帶件材料100，於其之上接著形成有金屬凸塊之半導體晶片2-1。帶件材料100例如只要單面具有接著性者，則其形狀或材質不限。其後，與第2實施形態同樣地形成晶片積層體。於將晶片積層體之金屬凸塊藉由還原氣氛等電性連接之後，使帶件材料100自晶片積層體剝離。帶件材料100之剝離使用例如拾取工具A及吸附工具B等。 圖10(b)中顯示使用拾取工具A及吸附工具B之帶件材料100之剝離方法。利用拾取工具A將晶片積層體頂起，並利用吸附工具B吸附晶片積層體之半導體晶片4，由此能夠使帶件材料100自晶片積層體剝離。另，此時所吸附之半導體晶片亦可為半導體晶片2。其後之製造方法如同第2實施形態所示。 以上，根據本實施形態之半導體裝置之另一製造方法，具有與第1實施形態相同之效果，且進而與第1實施形態相比，由於是之後使帶件材料剝離，故能夠削減半導體裝置之面積。 雖已對本發明之若干實施形態進行說明，但該等實施形態係作為例子而提出，並非意圖限定發明之範圍。該等新穎之實施形態可以其他各種方式實施，可於不脫離發明之主旨之範圍內進行各種省略、置換、變更。該等實施形態及其變化包含於發明之範圍或主旨內，並且包含於發明申請專利範圍所記載之發明及其均等之範圍內。 [相關申請案] 本申請案主張日本專利申請案第2016-176671號(申請日：2016年9月9日)之優先權。該案之全文以引用的方式併入本文中。
1 支持基板 1a 第1面 1b 第2面 2 半導體晶片 2-1 半導體晶片 2-2 半導體晶片 2-3 半導體晶片 2-3a 電極墊 3 貫通電極 4 半導體晶片(邏輯LSI) 5 金屬凸塊 6 配線基板 6a 第1面 6b 第2面 7 樹脂模具 8 焊料凸塊 9 外部連接端子 10 內部連接端子 11 接著劑 12 接著劑 13 接著劑 61 絕緣層 62 配線層 100 帶件材料 A 拾取工具 B 吸附工具
圖1係顯示第1實施形態之半導體裝置之構成之剖視圖。 圖2係顯示第1實施形態之半導體裝置之構成之剖視圖。 圖3(a)及(b)係說明第1實施形態之半導體裝置之製造方法之圖。 圖4(a)及(b)係說明第1實施形態之半導體裝置之製造方法之圖。 圖5係說明第1實施形態之半導體裝置之製造方法之圖。 圖6係說明第1實施形態之半導體裝置之製造方法之圖。 圖7係說明第1實施形態之半導體裝置之製造方法之圖。 圖8係顯示第2實施形態之半導體裝置之構成之圖。 圖9(a)及(b)係說明第2實施形態之半導體裝置之製造方法之圖。 圖10(a)及(b)係說明第2實施形態之半導體裝置之製造方法之圖。

Claims (9)

  1. 一種半導體裝置之製造方法，其係於具有第1凸塊電極之第1半導體晶片之第1面上，使具有第2凸塊電極及第1貫通電極之第2半導體晶片，以上述第1凸塊電極與上述第1貫通電極重疊之方式積層； 於上述第2半導體晶片上，使具有第2貫通電極之第3半導體晶片，以上述第2凸塊電極與上述第2貫通電極重疊之方式積層而形成晶片積層體； 將上述晶片積層體之上述第1及第2凸塊電極，藉由回流焊而機械性連接於上述第1及第2貫通電極； 於具有第2面之第1基板上，以上述第1面朝向上述第2面側之方式搭載上述晶片積層體； 將上述第2面上及上述第1、第2及第3半導體晶片間以樹脂密封。
  2. 一種半導體裝置之製造方法，其係於第1半導體晶片之第1面上，使具有第1凸塊電極及第1貫通電極之第2半導體晶片，以上述第1凸塊電極與上述第1面相接之方式積層； 於上述第2半導體晶片上，使具有第2凸塊電極及第2貫通電極之第3半導體晶片，以上述第2凸塊電極與上述第1貫通電極重疊之方式積層而形成晶片積層體； 將上述晶片積層體之上述第1及第2凸塊電極，藉由回流焊而機械性連接於上述第1及第2貫通電極； 於具有第2面之第1基板上，以上述第1面朝向上述第2面側之方式搭載上述晶片積層體； 將上述第2面上及上述第1、第2及第3半導體晶片間以樹脂密封。
  3. 如請求項1或2之半導體裝置之製造方法，其中 於上述第1半導體晶片之上述第1面之相反面，介隔第1樹脂而設置第2基板。
  4. 如請求項1或2之半導體裝置之製造方法，其中 使上述第1半導體晶片之上述第1面之相反面接著帶件材料。
  5. 如請求項1或2之半導體裝置之製造方法，其中 上述回流焊係於還原環境中進行。
  6. 如請求項1或2之半導體裝置之製造方法，其中 上述樹脂密封係藉由轉注成型進行。
  7. 如請求項1或2之半導體裝置之製造方法，其中 上述第1及第2凸塊電極係包含Au、Ni、Cu、Sn、Bi、Zn、In及其合金之任一者之金屬凸塊，或包含Au、Ni、Cu、Al、Pd及其合金之任一者之電極墊。
  8. 如請求項4之半導體裝置之製造方法，其中 於形成上述晶片積層體後， 使用拾取工具或吸附工具剝離上述帶件材料。
  9. 如請求項1或2之半導體裝置之製造方法，其中 於上述第1、第2及第3半導體晶片間、或上述晶片積層體及上述第1基板之間進而具有接著樹脂。
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