WO2014181766A1 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
WO2014181766A1
WO2014181766A1 PCT/JP2014/062147 JP2014062147W WO2014181766A1 WO 2014181766 A1 WO2014181766 A1 WO 2014181766A1 JP 2014062147 W JP2014062147 W JP 2014062147W WO 2014181766 A1 WO2014181766 A1 WO 2014181766A1
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Prior art keywords
semiconductor chip
chip
semiconductor
bump electrodes
semiconductor device
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PCT/JP2014/062147
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English (en)
French (fr)
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幸一 畠山
洋行 伊藤
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ピーエスフォー ルクスコ エスエイアールエル
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Priority to US14/889,797 priority Critical patent/US20160329304A1/en
Priority to KR1020157032271A priority patent/KR20160006702A/ko
Priority to DE112014002322.1T priority patent/DE112014002322T5/de
Publication of WO2014181766A1 publication Critical patent/WO2014181766A1/ja

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    • H01L2924/40—Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
    • H01L2924/401—LASER
    • H01L2924/402—Type
    • H01L2924/404—Type being a solid state

Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.
  • Patent Document 1 discloses a CoC type semiconductor device including a Si interposer, a plurality of DRAM chips, and an interface chip stacked on a resin interposer and a mold resin configured to cover them.
  • the back surface of the interface chip which is the contact surface with the mold resin, has no bumps. If the mirror chip finish is used to increase the bending strength of the interface chip that has been thinned by back grinding, The adhesion between the resin and the back surface of the interface chip may be reduced. Since the adhesive force between the mold resin and the back surface of the interface chip is reduced, the internal stress of the sealing resin is concentrated on the corner portion on the back surface of the interface chip, and there is a problem that peeling occurs at this interface. Due to the peeling of the interface, the part of the mold resin peeled off in the temperature cycle such as at the time of reflow expands and contracts alone, which causes a package crack and reduces the reliability of the semiconductor device.
  • Patent Document 2 discloses a technique for forming irregularities on the exposed back surface of a semiconductor chip flip-chip mounted on a wiring board. More specifically, Patent Document 2 discloses a semiconductor device having an uneven portion on the back surface of a semiconductor chip in order to obtain a semiconductor device with good heat dissipation.
  • the uneven portion formed on the back surface of the semiconductor chip has a configuration in which inclined shapes are formed on the bottom side surface of the recess and the end of the protruded portion.
  • the four corners of the semiconductor chip are basically uneven. The part is not formed. For this reason, there has been a problem that peeling occurs between the sealing resin and the semiconductor chip due to the pressure applied to the end portion of the semiconductor chip where the internal stress of the sealing resin is particularly concentrated.
  • the present invention provides a semiconductor device having a rough surface portion at least at the end of the back surface of a semiconductor chip and a method for manufacturing the same.
  • one embodiment of the present invention is a semiconductor device including a first semiconductor chip in which a plurality of first bump electrodes are formed on one surface and a rough surface portion is formed on at least an end of the other surface facing the one surface.
  • a plurality of second bump electrodes are formed on one surface, and a plurality of third bump electrodes electrically connected to the plurality of second bump electrodes are formed on the other surface opposite to the one surface.
  • the plurality of connection pads are the plurality of first pads.
  • the wiring substrate stacked on the second semiconductor chip so as to be electrically connected to the bump electrode, and the wiring so as to cover the first semiconductor chip, the second semiconductor chip, and the resin layer.
  • the present invention relates to a semiconductor device having a sealing resin portion formed on a substrate.
  • a step of preparing a first semiconductor chip having a plurality of first bump electrodes formed on one surface, a plurality of second bump electrodes formed on one surface, and the one surface Providing a second semiconductor chip having a plurality of third bump electrodes electrically connected to the plurality of second bump electrodes on the other surface facing the plurality of second bump electrodes; and the plurality of third bumps Laminating a second semiconductor chip on the first semiconductor chip so as to electrically connect an electrode to the plurality of first bump electrodes of the first semiconductor chip; and at least the first semiconductor chip.
  • the present invention relates to a device manufacturing method.
  • the reliability of the semiconductor device can be improved.
  • FIG. 1 is a plan view showing a schematic configuration of a semiconductor device according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view taken along the line A-A ′ of the semiconductor device shown in FIG. 1. It is sectional drawing for demonstrating the manufacturing process which forms a chip laminated body using a memory chip.
  • FIG. 4 is a cross-sectional view for explaining a manufacturing process for forming a chip stack following FIG. 3.
  • FIG. 5 is a cross-sectional view for explaining a process of mounting a logic chip on a wiring board on which the chip stack shown in FIG. 4 is mounted. It is sectional drawing for demonstrating the process of mounting a chip laminated body on the wiring board shown in FIG.
  • FIG. 8 is a cross-sectional view taken along the line B-B ′ of the semiconductor device illustrated in FIG. 7. It is sectional drawing which shows the modification of the manufacturing process which forms the chip laminated body in each Example of this invention. It is sectional drawing for demonstrating the semiconductor device carrying the chip laminated body shown in FIG. It is sectional drawing which shows the modification of the semiconductor device in each Example of this invention.
  • a wiring board 40, a plurality of bump electrodes 101 on one surface, and a rough surface portion 102 are formed on at least end portions (four corners) of the other surface 104 opposed to the one surface.
  • the first semiconductor chip 11 disposed farthest from the wiring substrate 40 is formed on the wiring substrate 40 so that the rough surface portions 102 are formed at least at the four corners of the other surface 104 and the one surface faces the wiring substrate 40.
  • the adhesion between the sealing resin 52 and the back surface 104 of the first semiconductor chip 11 can be improved.
  • the occurrence of peeling between the sealing resin 52 and the first semiconductor chip 11 at the corner portion of the back surface 104 where the internal stress of the sealing resin 52 is concentrated can be reduced, and the reliability of the semiconductor device 1 can be improved. Can be improved.
  • FIG. 1 is a plan view showing a schematic configuration of a CoC type semiconductor device 1 according to the present embodiment.
  • 2 is a cross-sectional view taken along the line AA ′ of the semiconductor device shown in FIG.
  • the wiring board 40 has an insulating base material 44 such as glass epoxy, and a predetermined wiring pattern made of Cu or the like is formed on both surfaces of the insulating base material 44. Insulating films 43 and 45 such as a solder resist film are formed on both surfaces of the insulating substrate 44, and predetermined openings are formed in the insulating films 43 and 45. A part of the wiring pattern is exposed in the opening, a portion exposed from the opening on one surface side is a connection pad 47, and a portion exposed from the opening on the other surface side is a land 46. A plurality of connection pads 47 are disposed on one surface of the wiring board 40 and a plurality of lands 46 are disposed on the other surface. The lands 46 are arranged in a grid array on the other surface.
  • a semiconductor chip for example, a logic chip 13 is mounted on one surface of the wiring board 40.
  • a predetermined circuit and a plurality of electrode pads (not shown) connected to the circuit are formed on one surface of a silicon substrate, and surface bump electrodes 101 are respectively formed on the plurality of electrode pads.
  • the surface bump electrode 101 is configured to protrude from one surface of the logic chip 13 and includes, for example, a pillar made of Cu and a bonding material 109 such as solder formed on the pillar.
  • the surface bump electrode 101 of the logic chip 13 is electrically connected to the connection pad 47 of the wiring board 40 through the bonding material 109.
  • a plurality of back surface bump electrodes 106 are formed on the other surface of the logic chip 13.
  • the back surface bump electrode 106 is configured to protrude from the other surface of the logic chip 13 and includes, for example, a pillar made of Cu and a plated layer made of Ni / Au or the like formed on the pillar.
  • the logic chip 13 has a plurality of through electrodes 105 that penetrate the silicon substrate, and the plurality of back surface bump electrodes 106 are electrically connected to the corresponding front surface bump electrodes 101 through the corresponding through electrodes 105. It is connected to the.
  • a gap is formed between the logic chip 13 and the wiring board 40, and the gap is filled with an underfill material 51 or an adhesive member (Non Conductive Paste) 107.
  • the front surface bump electrodes 101 of the logic chip 13 are redistributed by wiring on the front surface in accordance with the pitch of the connection pads 47 on the wiring substrate 40 and are arranged at a pitch wider than the arrangement pitch of the back surface bump electrodes 106. .
  • a chip stacked body 10 configured by stacking a plurality of memory chips 11 and 12 is stacked.
  • the plurality of memory chips 11 and 12 are, for example, semiconductor chips having the same chip size in which the same memory circuit is formed on one surface of a silicon substrate, and each of the memory chips 11 and 12 includes a plurality of electrode pads ( (Not shown).
  • a surface bump electrode 101 is formed on each of the plurality of electrode pads of the memory chips 11 and 12.
  • the surface bump electrode 101 is configured to protrude from the surfaces of the memory chips 11 and 12, and includes a pillar made of Cu or the like and a plated layer made of Ni / Au or the like formed on the pillar.
  • a solder layer serving as a bonding material is formed on the surface bump electrode 101 of the memory chip 12 adjacent to the logic chip 13, and the logic chip is interposed via the solder layer. 13 back surface bump electrodes 106 are joined.
  • a plurality of back surface bump electrodes 106 are formed on the back surface of the three second memory chips 12 excluding the first memory chip 11 disposed at the position farthest from the wiring substrate 40.
  • the back surface bump electrode 106 is configured to protrude from the other surface of the memory chip 12 and includes, for example, a pillar made of Cu and a bonding member such as solder formed on the pillar.
  • the plurality of back surface bump electrodes 106 are disposed at positions overlapping the corresponding front surface bump electrodes 101.
  • the second memory chip 12 has a plurality of through electrodes 105 that penetrate the silicon substrate, and the plurality of back surface bump electrodes 106 are electrically connected to the corresponding front surface bump electrodes 101 via the corresponding through electrodes 105. Connected.
  • the plurality of surface bump electrodes 101 of the memory chips 11 and 12 are arranged in three rows along the long side in the central region of the substantially rectangular plate-shaped memory chips 11 and 12 as shown in FIG. .
  • the first memory chip 11 arranged at the farthest position from the wiring board 40 is not formed with the back bump electrode 106 and the through electrode 105, and is configured to be thicker than the second semiconductor chip 12. ing.
  • the chip thickness of the second semiconductor chip 12 is 50 ⁇ m
  • the chip thickness of the first semiconductor chip 11 is 100 ⁇ m.
  • the chip stack 10 is covered with an underfill material 51 so as to expose the back surface 104 of the first semiconductor chip 11 and the surface of the second memory chip 12 adjacent to the logic chip 13. , 12 is filled with an underfill material 51.
  • the rough surface portion 102 is configured in a roughened state as shown in FIG. 2, for example, by mirror-finishing the surface by laser irradiation.
  • a mark portion 103 formed by a laser mark is formed in a substantially central region of the back surface 104 of the first memory chip 11.
  • identification information such as a company name and a product name is formed.
  • the surface of the mark portion 103 is also shaved by laser irradiation to form a rough surface portion, and the sealing resin 52 and the back surface 104 of the first memory chip 11 are also formed by the mark portion 103 serving as the rough surface portion. Can be further improved.
  • the gap between the logic chip 13 and the chip stack 10 is filled with an underfill material 51 or an adhesive member (NCP) 107.
  • a sealing resin 52 is formed on one surface of the wiring board 40, and the logic chip 13 and the chip stack 10 are covered with the sealing resin 52.
  • the first memory chip 11 disposed farthest from the wiring substrate 40 is formed with the rough surface portions 102 at least at the four corners of the other surface, so that the sealing resin 52 and the sealing resin 52 can be obtained by the resin anchor effect. Adhesion with the back surface 104 of the first memory chip 11 can be improved. Thereby, the occurrence of peeling between the sealing resin 52 and the first memory chip 11 at the corner portion of the back surface 104 where the internal stress of the sealing resin 52 is concentrated can be reduced, and the reliability of the semiconductor device 1 is improved. it can.
  • FIG. 3 is a cross-sectional view showing an example of the assembly procedure of the chip stack 10 used in the semiconductor device 1 shown in FIGS. 1 and 2.
  • FIG. 4 is a cross-sectional view illustrating a process of forming the rough surface portions 102 and 103 on the chip stack 10 subsequent to FIG.
  • the semiconductor chips 11, 12, and 13 have a configuration in which a predetermined circuit such as a memory circuit is formed on one surface of a plate-shaped semiconductor substrate made of substantially square Si or the like.
  • the semiconductor chip (first memory chip) 11 is placed on the bonding stage 63 shown in FIG. 3A with one surface on which a predetermined circuit is formed facing upward.
  • the first memory chip 11 is held on the bonding stage 63 by being sucked by a vacuum device (not shown) through a suction hole provided in the bonding stage 63.
  • a second-stage semiconductor chip 12 is mounted on the first-stage semiconductor chip 11 held on the bonding stage 63, and the surface bump electrode 101 on one surface of the first-stage semiconductor chip 11 is connected to the second-stage semiconductor chip 11.
  • the second-stage semiconductor chip 12 is connected and fixed on the first-stage semiconductor chip 11 by bonding the back-surface bump electrode 106 on the other surface on which the circuit of the semiconductor chip 12 is not formed.
  • thermocompression bonding method in which a predetermined load is applied to the semiconductor chip 12 by a bonding tool 61 set at a high temperature (for example, about 300 ° C.) is used. That's fine.
  • a thermocompression bonding method in which a predetermined load is applied to the semiconductor chip 12 by a bonding tool 61 set at a high temperature (for example, about 300 ° C.) is used. That's fine.
  • a thermocompression bonding method in which a pressure is applied while applying an ultrasonic wave or an ultrasonic thermocompression bonding method using these in combination may be used.
  • the third-stage semiconductor chip 12 is connected and fixed on the second-stage semiconductor chip 12 in the same procedure as described above, and the fourth-stage on the third-stage semiconductor chip 12 in the same procedure as described above.
  • the semiconductor chip 12 is connected and fixed (FIG. 3B).
  • the plurality of semiconductor chips 11 and 12 loaded in the above procedure are placed on a coating sheet 73 affixed to a coating stage 72, for example, as shown in FIG.
  • a coating sheet 73 a material having poor wettability with respect to the underfill material 51 is used, such as a fluorine-based sheet or a sheet coated with a silicone-based adhesive.
  • the coating sheet 73 does not need to be directly pasted on the coating stage 72, and may be anywhere on a flat surface.
  • the coating sheet 73 may be pasted on a predetermined jig or the like placed on the coating stage 72.
  • the underfill material 51 is supplied to the plurality of semiconductor chips 11 and 12 placed on the coating sheet 73 by the dispenser 71 from the vicinity of the end portions thereof.
  • the supplied underfill material 51 enters a gap between the semiconductor chips 11 and 12 by a capillary phenomenon while forming a fillet around the stacked semiconductor chips 11 and 12, and between the semiconductor chips 11 and 12. Fill the gap.
  • the coating sheet 73 since a sheet made of a material having poor wettability with respect to the underfill material 51 is used as the coating sheet 73, the spread of the underfill material 51 is suppressed and the fillet width does not increase.
  • the semiconductor chips 11 and 12 after the underfill material 51 is supplied are cured (heat treated) at a predetermined temperature, for example, about 150 ° C. while being placed on the coating sheet 73, thereby thermosetting the underfill material 51. .
  • a first sealing resin layer made of an underfill material 51 that covers the periphery of the chip stack 10 and fills the gap between the semiconductor chips 11 and 12 is formed.
  • the chip laminate 10 including the underfill material 51 is picked up from the coating sheet 73.
  • the coating sheet 73 since a sheet made of a material having poor wettability with respect to the underfill material 51 is used as the coating sheet 73, the chip stack 10 can be easily picked up from the coating sheet 73.
  • the chip laminate 10 When the chip laminate 10 is displaced when supplying the underfill material 51 to the chip laminate 10, the chip laminate 10 is temporarily fixed to the application sheet 73 using a resin adhesive, and then the underfill material 51.
  • the fill material 51 may be supplied.
  • the rough surface portion 102 on the back surface 104 of the first memory chip 11 of the chip stacked body 10 is formed together with the mark portion 103 in the mark forming process.
  • the second memory located at the end opposite to the first memory chip 11 so that the back surface 104 of the first memory chip 11 faces upward.
  • the surface side of the chip 12 is sucked and held on the stage 81 of the laser marking device.
  • a bump relief groove 82 is formed in the stage 81 corresponding to the arrangement of the surface bump electrode 101, and the surface bump electrode 101 of the second memory chip 12 is arranged in the bump relief groove 82.
  • a bonding material such as solder of the logic chip 13 is formed at the front end of the front surface bump electrode 101 of the second memory chip 12, and the shape of the bonding material is deformed by being disposed in the bump relief groove 82. And the chip stack 10 can be held.
  • the laser light 84 from the light source 83 is condensed by a condensing lens 85 and applied to a predetermined position on the back surface 104 of the first memory chip 11 of the chip stack 10. .
  • the laser beam 84 By irradiating the laser beam 84, the mirror-finished surface is shaved, and the mark portion 103 and the rough surface portion 102 are formed on the back surface 104 of the first memory chip 11.
  • a YVO4 laser yttrium vanadium oxide
  • the laser beam 84 is irradiated through a mask having a predetermined pattern or is drawn so as to be drawn in a predetermined pattern, thereby forming a rough surface portion 102 at a desired identification mark (rough surface portion) 103 and four corners.
  • the sealing resin 52 and the back surface of the first memory chip 11 are provided.
  • the adhesion in the vicinity of the four corners where the stress of the sealing resin 52 is concentrated can be improved, and the occurrence of peeling between the sealing resin 52 and the first memory chip 11 can be reduced.
  • the occurrence of package cracks in a temperature cycle such as during reflow can be reduced, and the reliability of the semiconductor device 1 can be improved.
  • the mark portion 103 formed on the back surface 104 of the first memory chip 11 with a laser mark, the mark portion 103 also becomes a rough surface portion, and further, the sealing resin 52 and the back surface 104 of the first memory chip 11 Adhesion can be improved.
  • the rough surface portion 102 is formed at the four corners in the step of forming the identification mark portion 103 formed on the chip stack 10. Therefore, it can be carried out without adding a new process.
  • FIG. 5 is a cross-sectional view for explaining a process of placing the semiconductor chip 13 on the wiring board 40 constituting the semiconductor device 1 according to the first embodiment of the present invention.
  • FIG. 6 is a cross-sectional view for explaining an assembly process for mounting the chip laminated body 10 shown in FIG. 4 on the wiring board 40 shown in FIG. 5 and 6 show an example of an assembly procedure for forming a plurality of semiconductor devices 1 at once.
  • a wiring substrate 40 including a plurality of product formation regions 41 arranged in a matrix is prepared.
  • Each product forming area 41 is a portion that becomes the wiring substrate 40 of the semiconductor device 1, and a predetermined pattern of wiring is formed on the insulating base 44 in each product forming area 41.
  • Each wiring is connected to a connection pad 47 and a land 46. Is covered with insulating films 43 and 45 such as a solder resist film. Dicing lines 42 are formed between the product formation regions 41 of the wiring board 40 when the semiconductor devices 1 are individually separated.
  • connection pads 47 for connecting to the chip stack 10 are formed on one surface of the wiring board 40, and a plurality of lands 46 for connecting solder balls 53 serving as external terminals are formed on the other surface. Is formed. These connection pads 47 are connected to predetermined lands 46 by wiring.
  • an insulating filler 108 for example, NCP is applied to each product formation region 41 of the wiring board 40 by the dispenser 71.
  • connection pads 47 of the wiring board 40 and the surface bump electrodes 101 of the logic chip 13 are electrically bonded via a bonding material 109.
  • the filler 108 applied on the wiring board 40 is filled between the wiring board 40 and the logic chip 13, and the wiring board 40 and the logic chip 13 are bonded and fixed.
  • an insulating adhesive member 107 for example, NCP is applied to the logic chip 13 arranged on the wiring substrate 40 by the dispenser 71, respectively. To do.
  • the chip stack 10 is mounted on the logic chip 13 of the wiring board 40 (FIG. 6A), and each front bump electrode 101 of the chip stack 11 and each back bump electrode 106 of the logic chip 13 are For example, bonding is performed using a thermocompression bonding method.
  • the adhesive member 107 applied on the logic chip 13 is filled between the chip stack 10 and the logic chip 13, and the chip stack 10 and the logic chip 13 are bonded and fixed (FIG. 6A). .
  • the wiring substrate 40 on which the chip stack 10 is mounted is set in a molding die composed of an upper mold and a lower mold (not shown) and moves to a molding process.
  • a cavity (not shown) that collectively covers the plurality of chip stacks 10 is formed in the upper mold of the molding die, and the chip stacks 10 mounted on the wiring board 40 are accommodated in the cavities.
  • the sealing resin 52 heated and melted is injected into a cavity provided in the upper mold of the molding die, and the cavity is filled with the sealing resin 52 so as to cover the entire chip stack 10.
  • a thermosetting resin such as an epoxy resin is used.
  • the sealing resin 52 is cured by curing at a predetermined temperature, for example, about 180 ° C., and a plurality of products are obtained as shown in FIG. 6B.
  • a sealing resin 52 is formed as a second sealing resin layer that collectively covers the chip stacks 10 mounted on the formation portion. Further, the sealing resin 52 is completely cured by baking at a predetermined temperature.
  • the semiconductor chip 11, 12 of the chip stack 10 is sealed with a first sealing resin layer (underfill material) 51, and then the second sealing resin layer covering the entire chip stack 10. Since the (sealing resin 52) is formed, generation of voids in the gap between the semiconductor chips 11 and 12 can be suppressed.
  • the process proceeds to a ball mounting process, and conductive lands serving as external terminals of the semiconductor device 1 are formed on the lands 46 formed on the other surface of the wiring board 40 as shown in FIG.
  • a metal ball, for example, a solder ball 53 is connected.
  • solder balls 53 are sucked and held using a mounting tool (not shown) provided with a plurality of suction holes whose positions coincide with the lands 46 of the wiring board 40, and the flux is transferred to each solder ball 53. After that, the held solder balls 53 are collectively mounted on the lands 46 of the wiring board 40.
  • solder balls 53 and the lands 46 are connected by reflowing the wiring board 40.
  • the process proceeds to a substrate dicing process, and the semiconductor device 1 is formed by cutting and separating the individual product formation regions 41 with a predetermined dicing line 42.
  • the product forming region 41 is supported by sticking a dicing tape (not shown) to the sealing resin 52. Then, as shown in FIG. 6 (d), each product forming region 41 is separated by cutting along a predetermined dicing line 42 with a dicing blade provided in a dicing device (not shown). After cutting and separating, the dicing tape is picked up from the product formation region 41, whereby the CoC type semiconductor device 1 shown in FIG. 1 is obtained.
  • the chip stack 10 in which the plurality of semiconductor chips 11 and 12 are stacked is created first, and then the chip stack 10 is connected and fixed to the wiring board 40 on which the logic chip 13 is arranged. Due to the difference in thermal expansion coefficient and rigidity between the semiconductor chip and the wiring substrate 40, the thermal stress applied to the connection part between the semiconductor chips 11 and 12 and the semiconductor chips 11 and 12 by the heat treatment at the time of manufacture is reduced. Therefore, it is possible to suppress the breakage of the connection portion between the semiconductor chips 11 and 12 and the occurrence of cracks in the semiconductor chips 11 and 12.
  • the underfill material 51 serving as the first sealing resin layer serving as the first sealing resin layer to the plurality of stacked semiconductor chips 11 and 12 on the coating sheet 73 made of a material having poor wettability to the underfill material 51.
  • the shape of the fillet formed of the underfill material 51 can be stabilized and the fillet width can be reduced. Therefore, an increase in package size is suppressed. Further, after the underfill material 51 is supplied, the chip stack 10 can be easily picked up from the coating sheet 73.
  • the problem of peeling between the sealing resin 52 and the semiconductor chip 11 in reflow evaluation or the like can be solved, and the reliability of the semiconductor device 1 can be improved.
  • the semiconductor device 1 having a larger memory capacity or having more functions can be obtained.
  • the present embodiment is a semiconductor device 1 in which a chip stack 10 is mounted on a wiring board 40 on which a semiconductor chip 13 is disposed and sealed with a sealing resin 52. Since the description regarding is the same as FIGS. 1 and 2, the description thereof is omitted.
  • the second embodiment is different from the semiconductor device 1 according to the first embodiment in that the back surface 104 of the first memory chip 11 has a rough surface portion 202 other than the mark portion 203.
  • FIG. 7 is a plan view showing a schematic configuration of the semiconductor device 1 according to the second embodiment.
  • FIG. 8 is a cross-sectional view showing a cross-sectional configuration between B-B ′ of the semiconductor device 1 shown in FIG. 7.
  • This embodiment is configured in the same manner as the first embodiment, and not only the four corners of the back surface 104 of the first memory chip 11 but also the marks on the back surface 104 of the first memory chip 11 as shown in FIG.
  • the second embodiment is different from the first embodiment in that the substantially entire surface excluding the region to be the portion 203 is configured to be the rough surface portion 202.
  • the back surface 104 of the first memory chip 11 includes a rough surface portion 202 processed by irradiating a laser beam 84 and a mark portion 203 having a mirror-finished surface.
  • the laser light 84 from the light source 83 is condensed by the condensing lens 85 and applied to a predetermined position on the back surface 104 of the first memory chip 11 of the chip stack 10.
  • the mark portion 203 serving as a specific identification character is left as it is, and the other portions are irradiated with the laser beam 84.
  • the mirror-finished surface is shaved, and the rough surface portion 202 and the mark portion 203 are formed on the back surface 104 of the first memory chip 11.
  • the rough surface portion 202 is provided on the back surface 104 of the first memory chip 11 of the chip stack 10 other than the region to be the mark portion 203, thereby providing the sealing resin 52 and the first resin.
  • the adhesion with the back surface 104 of the memory chip 11 can be further improved.
  • occurrence of peeling between the sealing resin 52 and the first memory chip 11 can be reduced.
  • the occurrence of package cracks in a temperature cycle such as during reflow can be reduced, and the reliability of the semiconductor device 1 can be improved.
  • the same effect as that of the first embodiment can be obtained, and not only the four corner portions of the back surface 104 of the first memory chip 11 but also the rough surface portion 202 is formed on the substantially entire surface. Furthermore, the adhesion between the sealing resin 52 and the back surface 104 of the first memory chip 11 can be improved.
  • FIG. 9 is a sectional view showing a modification of the semiconductor device 1 according to each of the above embodiments.
  • FIG. 10 is a cross-sectional view showing a schematic configuration of the semiconductor device 1 assembled according to a modification of each embodiment.
  • a resin layer 31 such as NCF is provided in advance on the back surface of the second memory chip 12.
  • the second memory chip 12 is stacked on the first memory chip 11, whereby the resin layer 31 is melted and spreads between the semiconductor chips 11 and 12. Filled with.
  • the resin layer 31 is cured by curing at a predetermined temperature, and the chip stack 10 as shown in FIG. 9C is formed.
  • the resin layer 31 contains, for example, a flux active material, and the bump electrodes 101 and 106 can be connected well even after the resin layer 31 is formed.
  • the resin layer 31 on the back surface of the second memory chip 12 in advance and filling the gap between the semiconductor chips 11 and 12 with the resin layer 31 when stacking the chips, an underfill process is unnecessary.
  • the assembly cost can be reduced as compared with the first embodiment.
  • the underfill process the space between the semiconductor chips 11 and 12 is filled using the capillary phenomenon, but the processing efficiency can be improved by filling the resin layer 31 in the chip stacking stage.
  • the rough surface portion 102 and the mark portion 103 are formed on the back surface 104 of the first memory chip 11, and the assembly process is performed, so that the configuration of the semiconductor device 1 shown in FIG. 10 is obtained.
  • the rough surface portions 102 and 103 are formed on the back surface 104 of the first memory chip 11, so that the same effect as that of the first embodiment is obtained, and the resin layer 31 is formed on the semiconductor chip 11, Since the resin layers 31 are disposed only between 12, the stress applied to the semiconductor chips 11 and 12 due to the curing shrinkage of the resin layer 31 can be reduced, and the reliability can be improved.
  • the present invention is not limited to the above-described embodiments and can be variously modified without departing from the gist thereof.
  • the case where four identical memory chips 11 and 12 are stacked has been described.
  • a chip stack in which different semiconductor chips such as the memory chips 11 and 12 and the logic chip 13 are combined may be used.
  • the number of stacked semiconductor chips may be three or less or five or more.
  • the rough surface portions 102, 103, and 202 are formed on the back surface 104 of the semiconductor chip 11 farthest from the wiring substrate 40 of the chip stack 10 has been described, but as shown in FIG.
  • the rough surface portion 202 may be formed on the back surface 104 of the semiconductor chip 11 that is flip-chip laminated at the farthest position of the wiring substrate 40 by MCP (Multi Chip Package).
  • MCP Multi Chip Package

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Abstract

　封止樹脂の内部応力が特に集中する半導体チップの端部に係る圧力による封止樹脂と半導体チップとの間での剥離の発生を低減する技術を提供する。本発明は、半導体チップの裏面の少なくとも端部に粗面部を有する半導体装置及びその製造方法を提供する。

Description

半導体装置及び半導体装置の製造方法
　本発明は、半導体装置及び半導体装置の製造方法に関する。
　電子機器の高速化、高機能化に伴い、半導体装置のさらなる高集積化が求められている。近年、半導体装置の高集積化を目的として、複数の半導体チップが積み重ねられた積層型半導体装置の開発が広く行われている。
　特許文献１は、樹脂インターポーザ上に、Ｓｉインターポーザ、複数のＤＲＡＭチップ、インターフェイスチップが積層され、それらを覆うように構成されたモールドレジンとからなるＣｏＣタイプの半導体装置が開示している。
　しかしながら、モールドレジンとの接触面となるインターフェイスチップの裏面はバンプが形成されていない構成であり、バックグラインドにより薄型化したインターフェイスチップの抗折強度を上げるために鏡面仕上げにした場合には、モールドレジンとインターフェイスチップの裏面との密着力が低下する恐れがある。このモールドレジンとインターフェイスチップの裏面との密着力が低下することで、封止樹脂の内部応力がインターフェイスチップの裏面のコーナ部に集中し、この界面に剥離が発生する問題がある。この界面の剥離によって、リフロー時等の温度サイクルで剥離したモールドレジンの部位が単独で膨張収縮するため、パッケージクラックの要因となり、半導体装置の信頼性が低下する。
　一方、特許文献２には、配線基板上にフリップチップ実装された半導体チップの露出した裏面に凹凸を形成する技術が開示されている。より詳しくは、特許文献２は放熱性の良好な半導体装置を得るため、半導体チップの裏面に凹凸部を有する半導体装置を開示している。
特開２００５－２４４１４３号公報 特開２０１０－１８２９５８号公報
　しかしながら、上記特許文献２では、半導体チップの裏面に形成された凹凸部は凹部底側面および凸部端部に傾斜形状が形成されている構成であるが、半導体チップの四隅については基本的に凹凸部が形成されていない。そのため、封止樹脂の内部応力が特に集中する半導体チップの端部に係る圧力により、封止樹脂と半導体チップとの間での剥離の発生が生じるという問題があった。
　本発明は、半導体チップの裏面の少なくとも端部に粗面部を有する半導体装置及びその製造方法を提供する。
　上述の課題に鑑み、本発明の一態様は、一面に複数の第１のバンプ電極が形成され、上記一面に対向する他面の少なくとも端部に粗面部が形成された第１の半導体チップと、一面に複数の第２のバンプ電極が形成され、上記一面に対向する他面に上記複数の第２のバンプ電極に電気的に接続された複数の第３のバンプ電極が形成され、上記複数の第３のバンプ電極を上記第１の半導体チップの上記複数の第１のバンプ電極に電気的に接続するように、上記第１の半導体チップの上に積層された第２の半導体チップと、少なくとも上記第１の半導体チップの他面と上記第２の半導体チップの一面を露出するように、上記第１及び第２の半導体チップを覆う樹脂層と、一面に複数の接続パッドが形成され、上記複数の接続パッドが上記複数の第２のバンプ電極に電気的に接続するように、上記第２の半導体チップ上に積層された配線基板と、上記第１の半導体チップ、上記第２の半導体チップ及び上記樹脂層を覆うように上記配線基板上に形成された封止樹脂部と、を有することを特徴とする半導体装置に関する。
　さらに、本発明の別の態様によると、一面に複数の第１のバンプ電極が形成された第１の半導体チップを準備する工程と、一面に複数の第２のバンプ電極が形成され、前記一面に対向する他面に前記複数の第２のバンプ電極に電気的に接続された複数の第３のバンプ電極が形成された第２の半導体チップを準備する工程と、前記複数の第３のバンプ電極を前記第１の半導体チップの前記複数の第１のバンプ電極に電気的に接続するように、第２の半導体チップを前記第１の半導体チップの上に積層する工程と、少なくとも前記第１の半導体チップの他面と前記第２の半導体チップの一面を露出するように、樹脂層で前記第１及び第２の半導体チップを覆う工程と、前記第１の半導体チップの前記一面に対向する他面の少なくとも端部に粗面部を形成する工程と、一面に複数の接続パッドが形成された配線基板を、前記複数の接続パッドが前記複数の第２のバンプ電極に電気的に接続するように、前記第２の半導体チップ上に積層する工程と、前記第１の半導体チップ、前記第２の半導体チップ及び前記樹脂層を覆うように封止樹脂部を前記配線基板上に形成する工程と、を有することを特徴とする半導体装置の製造方法に関する。
　本発明によると、封止樹脂と半導体チップとの間での剥離の発生を低減できるため、半導体装置の信頼性を向上できる。
　本発明の更なる利点及び実施形態を、記述と図面を用いて下記に詳細に説明する。
本発明の第１の実施例による半導体装置の概略構成を示す平面図である。 図１に示す半導体装置のＡ－Ａ’断面図を示す。 メモリチップを用いてチップ積層体を形成する製造工程を説明するための断面図である。 図３に続いてチップ積層体を形成する製造工程を説明するための断面図である。 図４に示すチップ積層体を搭載する配線基板にロジックチップを実装する工程を説明するための断面図である。 図５に示す配線基板にチップ積層体を搭載する工程を説明するための断面図である。 本発明の第２の実施例による半導体装置の概略構成を示す平面図である。 図７に示す半導体装置のＢ－Ｂ’断面図を示す。 本発明の各実施例におけるチップ積層体を形成する製造工程の変形例を示す断面図である。 図９に示すチップ積層体を搭載した半導体装置を説明するための断面図である。 本発明の各実施例における半導体装置の変形例を示す断面図である。
　まず、本発明の実施の形態について説明する。
　本発明による半導体装置１は、配線基板４０と、一面に複数のバンプ電極１０１、上記一面に対向する他面１０４の少なくとも端部（四隅）に粗面部１０２が形成され、上記一面を上記配線基板４０に向けるように、上記配線基板４０の上に搭載された第１の半導体チップ１１と、少なくとも上記第１の半導体チップ１１の他面１０４を覆うように形成された封止樹脂部５２とを有する。
　配線基板４０から最も遠い位置に配置される第１の半導体チップ１１を、他面１０４の少なくとも四隅に粗面部１０２を形成し、上記一面を上記配線基板４０に向けるように、配線基板４０の上に搭載したことで、封止樹脂５２と第１の半導体チップ１１の裏面１０４との密着性を向上できる。これにより、封止樹脂５２の内部応力が集中する裏面１０４のコーナ部での封止樹脂５２と第１の半導体チップ１１との間での剥離の発生を低減でき、半導体装置１の信頼性を向上できる。
　以下、本発明の実施例について図面を参照しつつ説明する。但し、以下に説明する実施例によって本発明の技術的範囲は何ら限定解釈されることはない。
　（第１の実施例）
　初めに、本発明の第１の実施例について説明する。図１は、本実施例によるＣｏＣタイプの半導体装置１の概略構成を示す平面図である。図２は、図１に示す半導体装置のＡ－Ａ’間を示す断面図である。
　配線基板４０は、ガラスエポキシ等の絶縁基材４４を有しており、絶縁基材４４の両面にＣｕ等からなる所定の配線パターンが形成されている。上記絶縁基材４４の両面には例えばソルダーレジスト膜などの絶縁膜４３、４５が形成されており、当該絶縁膜４３、４５には所定の開口部が形成されている。開口部において配線パターンの一部が露出し、一面側の開口部から露出する部位が接続パッド４７、他面側の開口部から露出する部位がランド４６となる。上記配線基板４０の一面には複数の接続パッド４７が配置され、他面には複数のランド４６が配置される。上記ランド４６は他面にグリッドアレイ状に配置される。
　上記配線基板４０の一面上には、半導体チップ、例えばロジックチップ１３が搭載されている。ロジックチップ１３は、シリコン基板の一面に所定の回路と上記回路に接続された複数の電極パッド（不図示）が形成されており、上記複数の電極パッド上にそれぞれ表面バンプ電極１０１が形成されている。表面バンプ電極１０１は、ロジックチップ１３の一面から突出するように構成されており、例えばＣｕからなるピラーと上記ピラー上に形成されたはんだ等の接合材１０９とからなる。上記ロジックチップ１３の表面バンプ電極１０１は接合材１０９を介して配線基板４０の接続パッド４７に電気的に接続されている。またロジックチップ１３の他面には、複数の裏面バンプ電極１０６が形成されている。裏面バンプ電極１０６は、ロジックチップ１３の他面から突出するように構成されており、例えばＣｕからなるピラーと上記ピラー上に形成されたＮｉ／Ａｕ等のメッキ層とからなる。またロジックチップ１３は、シリコン基板を貫通する複数の貫通電極１０５を有しており、上記複数の裏面バンプ電極１０６は、それぞれ対応する貫通電極１０５を介して、対応する表面バンプ電極１０１に電気的に接続されている。上記ロジックチップ１３と配線基板４０との間には隙間が形成されており、上記隙間はアンダーフィル材５１又は接着部材（Ｎｏｎ　Ｃｏｎｄｕｃｔｉｖｅ　Ｐａｓｔｅ）１０７により充填されている。尚、ロジックチップ１３の表面バンプ電極１０１は、配線基板４０上の接続パッド４７のピッチに合わせて表面上の配線により再配線され、裏面バンプ電極１０６の配置ピッチよりも広いピッチで配置されている。
　さらに上記ロジックチップ１３の上には、複数のメモリチップ１１、１２が互いに積層されることで構成されたチップ積層体１０が積層されている。複数のメモリチップ１１、１２は、例えばシリコン基板の一面に同じメモリ回路が形成された同じチップサイズの半導体チップであり、それぞれのメモリチップ１１、１２は上記回路に接続された複数の電極パッド（不図示）を有している。メモリチップ１１、１２の上記複数の電極パッド上にそれぞれ表面バンプ電極１０１が形成されている。表面バンプ電極１０１は、上記メモリチップ１１、１２の表面から突出するように構成されており、Ｃｕ等からなるピラーとピラー上に形成したＮｉ／Ａｕ等のメッキ層からなる。尚、複数のメモリチップ１１、１２のうち、ロジックチップ１３に隣接するメモリチップ１２の表面バンプ電極１０１上には、例えば接合材となるはんだ層が形成されており、はんだ層を介してロジックチップ１３の裏面バンプ電極１０６に接合されている。
　また、配線基板４０から最も遠い位置に配置される第１のメモリチップ１１を除いた３つの第２のメモリチップ１２は、裏面上に複数の裏面バンプ電極１０６が形成されている。裏面バンプ電極１０６は、メモリチップ１２の他面から突出するように構成されており、例えばＣｕからなるピラーと上記ピラー上に形成されたはんだ等の接合部材とからなる。上記複数の裏面バンプ電極１０６はそれぞれ対応する表面バンプ電極１０１と重なる位置に配置されている。また第２のメモリチップ１２は、シリコン基板を貫通する複数の貫通電極１０５を有しており、上記複数の裏面バンプ電極１０６はそれぞれ対応する貫通電極１０５を介して対応する表面バンプ電極１０１に電気的に接続されている。上記メモリチップ１１、１２の複数の表面バンプ電極１０１は、例えば図１に示すように略長方形の板状のメモリチップ１１、１２の中央領域に、長辺に沿って３列で配置されている。
　そして、配線基板４０から最も遠い位置に配置される第１のメモリチップ１１は、裏面バンプ電極１０６と貫通電極１０５が形成されておらず、第２の半導体チップ１２よりもチップ厚が厚く構成されている。例えば第２の半導体チップ１２のチップ厚が５０μｍで、第１の半導体チップ１１のチップ厚が１００μｍで構成される。配線基板４０から最も遠い第１のメモリチップ１１に対して貫通電極１０５を形成せずにチップ厚を厚くしたことで、製造プロセスによる温度変化による貫通電極１０５の膨張や収縮による最大応力をチップ厚の厚い貫通電極１０５のない第１のメモリチップ１１で受けることができ、チップクラックの発生を低減できる。
　さらに、チップ積層体１０は第１の半導体チップ１１の裏面１０４とロジックチップ１３に隣接する第２のメモリチップ１２の表面を露出するようにアンダーフィル材５１で覆われおり、それぞれのメモリチップ１１、１２間の隙間にはアンダーフィル材５１が充填される。
　そして、アンダーフィル材５１から露出したチップ積層体１０の第１のメモリチップ１１の裏面１０４には、図１に示すように、４隅の領域に所定の範囲でそれぞれ粗面部１０２が形成されている。粗面部１０２は、例えばレーザー照射により鏡面仕上げの表面が削られて図２に示すように荒れた状態に構成されている。
　さらに、第１のメモリチップ１１の裏面１０４の略中央領域には、レーザーマークにより形成されたマーク部１０３が形成されている。マーク部１０３は、例えば社名や製品名等の識別情報が形成される。本実施例においては、マーク部１０３もレーザー照射により表面が削られて粗面部が構成されており、粗面部となるマーク部１０３によっても封止樹脂５２と第１のメモリチップ１１の裏面１０４との密着性をさらに向上できる。
　そして、ロジックチップ１３と上記チップ積層体１０との間の隙間には、アンダーフィル材５１又は接着部材（ＮＣＰ）１０７が充填されている。また、上記配線基板４０の一面上には、封止樹脂５２が形成されており、上記ロジックチップ１３とチップ積層体１０は封止樹脂５２で覆われる。
　本実施例では、配線基板４０から最も遠い位置に配置される第１のメモリチップ１１を、他面の少なくとも４隅に粗面部１０２を形成したことで、樹脂のアンカー効果で封止樹脂５２と第１のメモリチップ１１の裏面１０４との密着性を向上できる。これにより封止樹脂５２の内部応力が集中する裏面１０４のコーナ部での封止樹脂５２と第１のメモリチップ１１との間での剥離の発生を低減でき、半導体装置１の信頼性を向上できる。
　図３は、図１及び図２に示した半導体装置１に用いるチップ積層体１０の組み立て手順の一例を示す断面図である。図４は、図３に続くチップ積層体１０への粗面部１０２、１０３の形成工程を示す断面図である。
　第１の実施例の半導体装置１を製造する場合、まず複数の半導体チップ１１、１２、１３を準備する。半導体チップ１１、１２、１３は、略四角形のＳｉ等からなる板状の半導体基板の一方の面にメモリ回路等の所定の回路が形成された構成である。
　半導体チップ（第１のメモリチップ）１１は、図３（ａ）に示すボンディングステージ６３上に、所定の回路が形成された一方の面を上方に向けて載置される。第１のメモリチップ１１は、ボンディングステージ６３に設けられた吸着孔を介して不図示の真空装置により真空吸引されることで、ボンディングステージ６３上で保持される。
　ボンディングステージ６３上に保持した１段目の半導体チップ１１上には、２段目の半導体チップ１２を搭載し、１段目の半導体チップ１１の一方の面の表面バンプ電極１０１と、２段目の半導体チップ１２の回路が形成されない他方の面の裏面バンプ電極１０６とを接合することで、２段目の半導体チップ１２を１段目の半導体チップ１１上に接続固定する。
　これらバンプ電極１０１、１０６どうしの接合には、例えば図３（ｂ）に示すように高温（例えば３００℃程度）に設定したボンディングツール６１により半導体チップ１２に所定の荷重を加える熱圧着法を用いればよい。なお、半導体チップ１１、１２どうしの接合には、熱圧着法だけでなく超音波を印加しつつ圧着する超音波圧着法あるいはこれらを併用する超音波熱圧着法を用いてもよい。
　２段目の半導体チップ１２上には、上記と同様の手順で３段目の半導体チップ１２を接続固定し、３段目の半導体チップ１２上には、上記と同様の手順で４段目の半導体チップ１２を接続固定する（図３（ｂ））。
　以上の手順で積載した複数の半導体チップ１１、１２は、例えば図３（ｃ）に示すように塗布ステージ７２に貼付された塗布用シート７３上に載置される。塗布用シート７３には、フッ素系シートやシリコーン系接着材が塗布されたシート等のように、アンダーフィル材５１に対する濡れ性が悪い材料が用いられる。なお、塗布用シート７３は、塗布ステージ７２上に直接貼る必要はなく、平坦な面上であればどこでもよく、例えば塗布ステージ７２上に載置した所定の治具等に貼ってもよい。
　塗布用シート７３上に載置された複数の半導体チップ１１、１２には、図３（ｃ）に示すように、その端部近傍からディスペンサ７１によりアンダーフィル材５１を供給する。供給されたアンダーフィル材５１は、積載された複数の半導体チップ１１、１２の周囲にフィレットを形成しつつ、半導体チップ１１、１２どうしの隙間へ毛細管現象によって進入し、半導体チップ１１、１２間の隙間を埋める。
　本実施例では、塗布用シート７３にアンダーフィル材５１に対する濡れ性が悪い材料から成るシートを用いるため、アンダーフィル材５１の広がりが抑制されてフィレット幅が大きくなることがない。
　アンダーフィル材５１供給後の半導体チップ１１、１２は、塗布用シート７３上に載置した状態で所定の温度、例えば１５０℃程度でキュア（熱処理）することで、アンダーフィル材５１を熱硬化させる。その結果、図３（ｄ）に示すように、チップ積層体１０の周囲を覆うと共に半導体チップ１１、１２間の隙間を埋めるアンダーフィル材５１から成る第１の封止樹脂層が形成される。
　本実施例では、塗布用シート７３にアンダーフィル材５１に対する濡れ性が悪い材料からなるシートを用いるため、熱硬化時における塗布用シート７３へのアンダーフィル材５１の付着が防止される。
　アンダーフィル材５１の熱硬化後、該アンダーフィル材５１を含むチップ積層体１０は、塗布用シート７３からピックアップされる。本実施例では、塗布用シート７３にアンダーフィル材５１に対する濡れ性が悪い材料からなるシートを用いるため、チップ積層体１０を塗布用シート７３から容易にピックアップできる。
　なお、チップ積層体１０にアンダーフィル材５１を供給する際、チップ積層体１０が位置ずれを起こす場合は、樹脂接着材を用いてチップ積層体１０を塗布用シート７３に仮固着した後、アンダーフィル材５１を供給してもよい。
　次に、本実施例による半導体装置１の半導体チップ１１への粗面部１０２及びマーク部１０３の形成工程について図４を参照しつつ説明する。チップ積層体１０の第１のメモリチップ１１の裏面１０４への粗面部１０２は、マーク形成工程にてマーク部１０３と合わせて形成される。
　マーク形成工程では、図４（ａ）に示すように第１のメモリチップ１１の裏面１０４を上に向けるように、上記第１のメモリチップ１１と反対側の端部に位置する第２のメモリチップ１２の表面側を、レーザーマーキング装置のステージ８１に吸着保持する。上記ステージ８１には、表面バンプ電極１０１の配置に対応してバンプ逃げ溝８２が形成されており、上記第２のメモリチップ１２の表面バンプ電極１０１がバンプ逃げ溝８２内に配置される。第２のメモリチップ１２の表面バンプ電極１０１の先端には、ロジックチップ１３のはんだ等の接合材が形成されており、バンプ逃げ溝８２内に配置することで、接合材の形状を変形させることなく、チップ積層体１０を保持できる。
　そして、図４（ｂ）に示すように、チップ積層体１０の第１のメモリチップ１１の裏面１０４の所定の位置に光源８３からのレーザー光８４を集光レンズ８５で集光して照射する。当該レーザー光８４の照射により、鏡面仕上げの表面を削り、第１のメモリチップ１１の裏面１０４にマーク部１０３と粗面部１０２を形成する。レーザーは、例えばＹＶＯ４レーザ（イットリウムバナジウムオキサイド）が用いられる。レーザー光８４は、所定のパターンのマスクを通して、照射、あるいは所定のパターンで描画するように照射することで、所望の識別マーク（粗面部）１０３と４コーナに粗面部１０２を形成する。
　チップ積層体１０の第１のメモリチップ１１の裏面１０４に、所望のマーク部１０３と４コーナ近傍の領域に粗面部１０２を設けたことにより、封止樹脂５２と第１のメモリチップ１１の裏面１０４、特に封止樹脂５２の応力が集中する４コーナ近傍での密着性を向上でき、封止樹脂５２と第１のメモリチップ１１との剥離の発生を低減できる。この剥離を低減したことで、リフロー時等の温度サイクルでのパッケージクラックの発生を低減し、半導体装置１の信頼性を向上できる。また第１のメモリチップ１１の裏面１０４に形成したマーク部１０３をレーザーマークで形成したことで、マーク部１０３も粗面部となり、さらに封止樹脂５２と第１のメモリチップ１１の裏面１０４との密着性を向上できる。
　また半導体装置１としてではなく、チップ積層体１０のみで出荷する場合には、チップ積層体１０に形成する識別用マーク部１０３を形成する工程で、併せて４コーナに粗面部１０２を形成することができるため、新たな工程を追加することなく実施可能となる。
　図５は、本発明の第１の実施例による半導体装置１を構成する配線基板４０に半導体チップ１３を配置する工程を説明するための断面図である。図６は、図５に示す配線基板４０に図４に示すチップ積層体１０を搭載する組み立て工程を説明するための断面図である。なお、図５及び図６は、複数の半導体装置１を一括して形成するための組み立て手順の一例を示している。
　図５（ａ）に示すように、半導体装置１の組み立て時、まずマトリックス状に配置された複数の製品形成領域４１を備えた配線基板４０を準備する。製品形成領域４１は、各々が半導体装置１の配線基板４０となる部位であり、各製品形成領域４１における絶縁基材４４に所定のパターンの配線が形成され、各配線は接続パッド４７及びランド４６を除いてソルダーレジスト膜等の絶縁膜４３、４５によって覆われている。この配線基板４０の製品形成領域４１間が各半導体装置１を個々に切り離す際のダイシングライン４２となる。
　配線基板４０の一方の面には、チップ積層体１０と接続するための複数の接続パッド４７が形成され、他方の面には外部端子となるはんだボール５３を接続するための複数のランド４６が形成されている。これら接続パッド４７は、所定のランド４６と配線によって接続されている。
　配線基板４０の準備が完了すると、図５（ｂ）に示すように、該配線基板４０の各製品形成領域４１上にそれぞれ絶縁性の充填材１０８、例えばＮＣＰをディスペンサ７１により塗布する。
　次に、図５（ｃ）に示すように、配線基板４０の接続パッド４７とロジックチップ１３の表面バンプ電極１０１とを、接合材１０９を介して電気的に接合する。このとき、配線基板４０上に塗布していた充填材１０８が配線基板４０とロジックチップ１３間に充填され、配線基板４０とロジックチップ１３とが接着固定される。
　配線基板４０とロジックチップ１３を接着固定した後、図５（ｄ）に示すように、配線基板４０に配置されたロジックチップ１３上にそれぞれ絶縁性の接着部材１０７、例えばＮＣＰをディスペンサ７１により塗布する。
　次に、配線基板４０のロジックチップ１３上にチップ積層体１０を搭載し（図６（ａ））、チップ積層体１１の各表面バンプ電極１０１とロジックチップ１３の各裏面バンプ電極１０６とを、例えば熱圧着法を用いて接合する。このとき、ロジックチップ１３上に塗布していた接着部材１０７がチップ積層体１０とロジックチップ１３間に充填され、チップ積層体１０とロジックチップ１３とが接着固定される（図６（ａ））。
　チップ積層体１０が搭載された配線基板４０は、不図示のトランスファモールド装置の上型と下型から成る成型金型にセットされ、モールド工程に移行する。
　成型金型の上型には、複数のチップ積層体１０を一括して覆う不図示のキャビティが形成され、該キャビティ内に配線基板４０上に搭載されたチップ積層体１０が収容される。
　次に、成型金型の上型に設けられたキャビティ内に加熱溶融させた封止樹脂５２を注入し、チップ積層体１０全体を覆うようにキャビティ内に封止樹脂５２を充填する。封止樹脂５２には、例えばエポキシ樹脂等の熱硬化性樹脂を用いる。
　続いて、キャビティ内を封止樹脂５２で充填した状態で、所定の温度、例えば１８０℃程度でキュアすることで封止樹脂５２を熱硬化させ、図６（ｂ）に示すように複数の製品形成部上に搭載された各チップ積層体１０を一括して覆う第２の封止樹脂層となる封止樹脂５２を形成する。さらに、所定の温度でベークすることで、封止樹脂５２を完全に硬化させる。
　本実施例では、チップ積層体１０の半導体チップ１１、１２間を第１の封止樹脂層（アンダーフィル材）５１で封止した後、チップ積層体１０全体を覆う第２の封止樹脂層（封止樹脂５２）を形成するため、半導体チップ１１、１２どうしの隙間でボイドが発生するのを抑制できる。
　封止樹脂５２を形成すると、ボールマウント工程に移行し、図６（ｃ）に示すように配線基板４０の他方の面に形成されたランド４６に、半導体装置１の外部端子となる導電性の金属ボール、例えばはんだボール５３を接続する。
　ボールマウント工程では、配線基板４０の各ランド４６と位置が一致する複数の吸着孔を備えた不図示のマウントツールを用いて複数のはんだボール５３を吸着保持し、各はんだボール５３にフラックスを転写した後、保持した各はんだボール５３を配線基板４０のランド４６上に一括して搭載する。
　全ての製品形成領域４１におけるランド４６に対するはんだボール５３の搭載が完了した後、配線基板４０をリフローすることで各はんだボール５３と各ランド４６とを接続する。
　はんだボール５３の接続が完了すると、基板ダイシング工程に移行し、所定のダイシングライン４２で個々の製品形成領域４１を切断分離することで半導体装置１を形成する。
　基板ダイシング工程では、封止樹脂５２に不図示のダイシングテープを貼着することで製品形成領域４１を支持する。そして、図６（ｄ）に示すように、不図示のダイシング装置が備えるダイシングブレードにより所定のダイシングライン４２で切断することで製品形成領域４１毎に分離する。切断分離後、ダイシングテープを製品形成領域４１からピックアップすることで、図１に示したＣｏＣ型の半導体装置１が得られる。
　本実施例によれば、複数の半導体チップ１１、１２を積載したチップ積層体１０を先に作成し、その後、ロジックチップ１３を配置した配線基板４０に該チップ積層体１０を接続固定するため、半導体チップと配線基板４０との熱膨張係数や剛性の違いにより製造時の熱処理で半導体チップ１１、１２どうしの接続部や半導体チップ１１、１２へ加わる熱応力が低減される。そのため、半導体チップ１１、１２どうしの接続部の破断や、半導体チップ１１、１２にクラックが発生するのを抑制できる。
　また、アンダーフィル材５１に対する濡れ性が悪い材料から成る塗布用シート７３上で、積載された複数の半導体チップ１１、１２に第１の封止樹脂層となるアンダーフィル材５１を供給するため、アンダーフィル材５１で形成されるフィレットの形状が安定化すると共にフィレット幅を小さくできる。そのため、パッケージサイズの大型化が抑制される。さらに、アンダーフィル材５１の供給後、塗布用シート７３からチップ積層体１０を容易にピックアップできる。
　このように、本実施例によると、リフロー評価などでの封止樹脂５２と半導体チップ１１との剥離の問題を解消し、半導体装置１の信頼性向上を図ることができる。
　また、本実施例では、チップ積層体１０とは異なる機能を有するロジックチップ１３を備えることで、よりメモリ容量が大きい、あるいはより多くの機能を備えた半導体装置１が得られる。
　（第２の実施例）
　続いて、本発明の第２の実施例について図面を参照しつつ詳細に説明する。本実施例は、第１の実施例と同様、半導体チップ１３を配置した配線基板４０にチップ積層体１０を搭載して封止樹脂５２により封止処理された半導体装置１であり、これらの構成に関する説明は図１及び図２と同様であるのでその説明を省略する。第２の実施例では、第１のメモリチップ１１の裏面１０４において、マーク部２０３以外の面が粗面部２０２となっている点において第１の実施例に係る半導体装置１とは異なっている。
　図７は、第２の実施例による半導体装置１の概略構成を示す平面図である。図８は、図７に示す半導体装置１のＢ－Ｂ’間の断面構成を示す断面図である。
　本実施例は、第１の実施例と同様に構成されており、第１のメモリチップ１１の裏面１０４の四隅だけでなく、図７に示すように第１のメモリチップ１１の裏面１０４のマーク部２０３となる領域を除いた略全面が粗面部２０２となるように構成されている点で実施例１と異なる。
　図８から分かるように、第１のメモリチップ１１の裏面１０４は、レーザー光８４を照射して処理された粗面部２０２と、鏡仕上げの表面を有するマーク部２０３とを含んでいる。第１の実施例と同様に、チップ積層体１０の第１のメモリチップ１１の裏面１０４の所定の位置に光源８３からのレーザー光８４を集光レンズ８５で集光して照射する。本実施例の場合、特定の識別用文字となるマーク部２０３はそのままにして、その他の部分に対してレーザー光８４を照射する。当該レーザー光８４の照射により、鏡面仕上げの表面を削り、第１のメモリチップ１１の裏面１０４に粗面部２０２とマーク部２０３を形成する。
　このように、チップ積層体１０の第１のメモリチップ１１の裏面１０４に、マーク部２０３となる領域以外に照射処理を施して粗面部２０２を設けたことで、封止樹脂５２と第１のメモリチップ１１の裏面１０４との密着性をさらに向上できる。その結果、封止樹脂５２と第１のメモリチップ１１との剥離の発生を低減できる。この剥離を低減したことで、リフロー時等の温度サイクルでのパッケージクラックの発生を低減し、半導体装置１の信頼性を向上できる。
　第２の実施例においても、第１の実施例と同様な効果が得られると共に、第１のメモリチップ１１の裏面１０４の４つのコーナ部だけでなく、略全面を粗面部２０２としたことで、さらに封止樹脂５２と第１のメモリチップ１１の裏面１０４との密着性を向上できる。
　図９は、上記各実施例による半導体装置１の変形例を示す断面図である。図１０は、各実施例の変形例により組み立てた半導体装置１の概略構成を示す断面図です。
　図９（ａ）に示すように、第２のメモリチップ１２の裏面に樹脂層３１、例えばＮＣＦを予め設けておく。図９（ｂ）に示すように第２のメモリチップ１２を第１のメモリチップ１１上に積層することで樹脂層３１が溶融され、半導体チップ１１、１２間の隙間に広がり隙間が樹脂層３１で充填される。充填後、所定の温度でキュアすることで樹脂層３１が硬化され、図９（ｃ）に示すようなチップ積層体１０が形成される。尚、樹脂層３１には、例えばフラックス活性材が含有されており、樹脂層３１を形成した後でも良好にバンプ電極１０１、１０６間を接続できる。このように、予め第２のメモリチップ１２の裏面に樹脂層３１を設け、チップ積層時に半導体チップ１１、１２間の隙間を樹脂層３１で充填するように構成することで、アンダーフィル工程が不要となり、第１の実施例と比べて組み立てコストを低減できる。またアンダーフィル工程は毛細管現象を利用して半導体チップ１１、１２間を充填するのに対して、チップ積層段階で樹脂層３１を充填することで処理効率も向上できる。そして、第１の実施例と同様に第１のメモリチップ１１の裏面１０４に粗面部１０２やマーク部１０３を形成し、組み立て処理することで、図１０に示す半導体装置１の構成となる。
　また、当該変形例では、第１のメモリチップ１１の裏面１０４に粗面部１０２、１０３を形成したことで、第１の実施例と同様な効果が得られると共に、樹脂層３１は半導体チップ１１、１２間のみに配置されるため、樹脂層３１の硬化収縮により半導体チップ１１、１２にかかる応力を低減でき、信頼性を向上できる。
　以上、本発明者によってなされた発明を実施例に基づき説明したが、本発明は上記実施例に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることは言うまでもない。例えば、上記実施例では、同一のメモリチップ１１、１２を４つ積層した場合について説明したが、メモリチップ１１、１２とロジックチップ１３等、異なる半導体チップを組み合せたチップ積層でも良い。積層する半導体チップの数も３段以下でも５段以上に構成しても良い。
　また、本実施例では、チップ積層体１０の配線基板４０から最も遠い位置の半導体チップ１１の裏面１０４に粗面部１０２、１０３、２０２を形成する場合について説明したが、図１１に示すように、ＭＣＰ（Ｍｕｌｔｉ　Ｃｈｉｐ　Ｐａｃｋａｇｅ）で配線基板４０の最も遠い位置にフリップチップ積層される半導体チップ１１の裏面１０４に粗面部２０２を形成するように構成しても良い。
　本発明は、その趣旨または主要な特徴から逸脱することなく、他の様々な形で実施することができる。そのため、前述の実施形態はあらゆる点で単なる例示に過ぎず、限定的に解釈してはならない。本発明の範囲は、特許請求項の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求項の範囲の均等範囲に属する全ての変形、様々な改良、代替および改質は、すべて本発明の範囲内のものである。
　本出願は、２０１３年５月７日に出願された、日本国特許出願第２０１３－９７４２４号からの優先権を基礎として、その利益を主張するものであり、その開示はここに全体として参考文献として取り込む。
１　半導体装置
１０　チップ積層体
１１　第１のメモリチップ（半導体チップ）
１２　第２のメモリチップ（半導体チップ）
１３　ロジックチップ（半導体チップ）
１０１　表面バンプ電極
１０２　粗面部
１０３　マーク部（粗面部）
１０４　裏面
１０５　貫通電極
１０６　裏面バンプ電極
１０７　接着部材（ＮＣＰ）
１０８　充填材（ＮＣＰ）
１０９　接合材
２０２　粗面部
２０３　マーク部
３１　樹脂層（ＮＣＦ）
４０　配線基板
４１　製品形成領域
４２　ダイシングライン
４３　絶縁膜（ＳＲ）
４４　絶縁基材
４５　絶縁膜（ＳＲ）
４６　ランド
４７　接続パッド
５１　アンダーフィル材
５２　封止樹脂
５３　はんだボール
６１　ボンディングツール
６２　バンプ逃げ溝
６３　ボンディングステージ
７１　ディスペンサ
７２　塗布ステージ
７３　塗布用シート
８１　ステージ
８２　パンプ逃げ溝
８３　光源
８４　レーザー光
８５　集光レンズ
９１　ワイヤ
９２　電極パット

Claims (8)

  1. 　一面に複数の第１のバンプ電極が形成され、前記一面に対向する他面の少なくとも端部に粗面部が形成された第１の半導体チップと、
    　一面に複数の第２のバンプ電極が形成され、前記一面に対向する他面に前記複数の第２のバンプ電極に電気的に接続された複数の第３のバンプ電極が形成され、前記複数の第３のバンプ電極を前記第１の半導体チップの前記複数の第１のバンプ電極に電気的に接続するように、前記第１の半導体チップの上に積層された第２の半導体チップと、
    　少なくとも前記第１の半導体チップの他面と前記第２の半導体チップの一面を露出するように、前記第１及び第２の半導体チップを覆う樹脂層と、
    　一面に複数の接続パッドが形成され、前記複数の接続パッドが前記複数の第２のバンプ電極に電気的に接続するように、前記第２の半導体チップ上に積層された配線基板と、
    　前記第１の半導体チップ、前記第２の半導体チップ及び前記樹脂層を覆うように前記配線基板上に形成された封止樹脂部と、を有することを特徴とする半導体装置。
  2. 　前記粗面部は、前記第１の半導体チップの他面の４隅の領域に形成されることを特徴とする請求項１に記載の半導体装置。
  3. 　前記粗面部は、識別情報を表示するためのマーク部を含むことを特徴とする請求項１又は２に記載の半導体装置。
  4. 　前記粗面部は、前記第１の半導体チップの他面におけるマーク部となる部分以外の領域に形成されることを特徴とする請求項１に記載の半導体装置。
  5. 　前記樹脂層は、前記第２の半導体チップに予め設けられていることを特徴とする請求項１乃至４の何れか一項に記載の半導体装置。
  6. 　一面に複数の第１のバンプ電極が形成された第１の半導体チップを準備する工程と、
    　一面に複数の第２のバンプ電極が形成され、前記一面に対向する他面に前記複数の第２のバンプ電極に電気的に接続された複数の第３のバンプ電極が形成された第２の半導体チップを準備する工程と、
    　前記複数の第３のバンプ電極を前記第１の半導体チップの前記複数の第１のバンプ電極に電気的に接続するように、第２の半導体チップを前記第１の半導体チップの上に積層する工程と、
    　少なくとも前記第１の半導体チップの他面と前記第２の半導体チップの一面を露出するように、樹脂層で前記第１及び第２の半導体チップを覆う工程と、
    　前記第１の半導体チップの前記一面に対向する他面の少なくとも端部に粗面部を形成する工程と、
    　一面に複数の接続パッドが形成された配線基板を、前記複数の接続パッドが前記複数の第２のバンプ電極に電気的に接続するように、前記第２の半導体チップ上に積層する工程と、
    　前記第１の半導体チップ、前記第２の半導体チップ及び前記樹脂層を覆うように封止樹脂部を前記配線基板上に形成する工程と、を有することを特徴とする半導体装置の製造方法。
  7. 　前記第１の半導体チップの他面に形成される粗面部はマーク部を含み、該マーク部は粗面部を形成する工程と同一の工程で形成されることを特徴とする請求項６に記載の半導体装置の製造方法。
  8. 　前記樹脂層で前記第１及び第２の半導体チップを覆う工程は、前記第２の半導体チップの他面に予め樹脂層を設けておき、該第２の半導体チップを第１の半導体チップ上に積層することで、チップ間の隙間を前記樹脂層で充填することを特徴とする請求項６又は７に記載の半導体装置の製造方法。
PCT/JP2014/062147 2013-05-07 2014-05-02 半導体装置及び半導体装置の製造方法 WO2014181766A1 (ja)

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