TWI647298B - 選擇性蝕刻矽和鍺之配方 - Google Patents
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Abstract
本發明係關於適用於自其上具有含矽材料及含鍺材料之微電子裝置相對於含鍺材料選擇性移除含矽材料及反之亦然的組成物。該移除組成物包括至少一種二醇且可調整以達成所需的Si:Ge移除選擇性及蝕刻速率。
Description
本發明係關於一種相對於含鍺材料選擇性蝕刻含矽材料及反之亦然的組成物及方法。
過去數十年來,積體電路中之特徵的縮放使得能夠增加半導體晶片上之功能性單元的密度。舉例來說,縮小電晶體尺寸容許將增加數量的記憶體裝置併入晶片上,導致製造具有增加容量之產品。
在用於積體電路裝置之場效電晶體(FET)的製造中,除矽外之半導電結晶材料可能有利。一種該類材料的實例為Ge,其提供許多相對於矽的潛在有利特徵,諸如,但不限於,高電荷載體(電洞)遷移率、帶隙偏移(band gap offset)、不同的晶格常數、及與矽合金化形成SiGe之半導電二元合金的能力。
在新型電晶體設計中使用Ge的一個問題為現針對多年來積極縮放之矽FET達成之極細特徵(例如,22奈米及以下)現在難以在Ge中達成,當以較不積極縮放的形式實施時,通常會使得潛在基於材料的效能被消除。縮放的困難係與Ge的材料性質有關,且更特定言之難以蝕刻通常在Ge活性層(例如,電晶體通道層)與下層矽基板材料之間用作中間層的SiGe。
本發明之一目的為提供相對於含鍺材料選擇性移除含矽材料及反之亦然,同時使存在於微電子裝置上之其他材料的移除或腐蝕減至最小的組成物。此外,本發明之一目的提供一種用於非選擇性蝕刻含矽及含鍺材料,以致該等材料以實質上相同速率蝕刻的組成物。
本發明係關於一種自包含含矽材料及含鍺材料之微電子裝置相對於含鍺材料選擇性蝕刻含矽材料及反之亦然的組成物及方法。
在一態樣中,描述一種自微電子裝置之表面相對於含鍺材料選擇性移除含矽材料之方法,該方法包括使矽選擇性組成物與微電子裝置之表面以相對於含鍺材料選擇性移除含矽材料所需的時間及溫度接觸,其中該矽選擇性組成物包含至少一種二醇化合物、至少一種氟化物物質、及至少一種氧化物質。
在另一態樣中,描述一種自微電子裝置之表面相對於含矽材料選擇性移除含鍺材料之方法,該方法包括使鍺選擇性組成物與微電子裝置之表面以相對於含矽材料選擇性移除含鍺材料所需的時間及溫度接觸,其中該鍺選擇性組成物包含至少一種二醇化合物及水。
本發明之其他態樣、特徵及具體例將可由隨後之揭示內容及隨附之申請專利範圍而更完整明瞭。
一般而言,本發明係關於相對於含鍺材料選擇性移除含矽材料及反之亦然,且因此適用作用於自微電子裝置至少部分移除材料之蝕刻劑的組成物。本發明揭示可如何調整組成物以相對於含Ge材料移除含Si材料或相對於含Si材料移除含Ge材料。
為容易參考起見,「微電子裝置」係相當於經製造用於微電子、積體電路、能量收集、或電腦晶片應用中之半導體基板、平板顯示器、相變記憶體裝置、太陽能面板及包括太陽能電池裝置、光伏打元件、及微機電系統(MEMS)之其他產品。應明瞭術語「微電子裝置」、「微電子基板」及「微電子裝置結構」並不具任何限制意味,且其包括任何最終將成為微電子裝置或微電子組件的基板或結構。微電子裝置可為圖案化、毯覆式、控制及/或測試裝置。
「矽」可定義為包括Si、多晶Si、及單晶Si。矽包含在可(例如)使用作為諸如FET及積體電路之電子裝置之基板或部分基板的絕緣體上矽(SOI)晶圓中。其他類型之晶圓亦可包含矽。
如本文所使用之「含矽材料」係相當於矽;p-摻雜矽;n-摻雜矽;氧化矽,包括閘氧化物(例如,熱或化學生長之SiO2)及TEOS;氮化矽;熱氧化物;SiOH;SiCOH;矽化鈦;矽化鎢;矽化鎳;矽化鈷;及低k介電材料。如本文所定義之「低k介電材料」係相當於在層狀微電子裝置中用作介電材料之任何材料,其中該材料具有低於約3.5之介電常數。較佳地,低k介電材料包括低極性材料諸如含矽有機聚合物、含矽有機/無機混合材料、有機矽酸鹽玻璃(OSG)、TEOS、氟化矽酸鹽玻璃(FSG)、二氧化矽、及摻碳氧化物(CDO)玻璃。應明瞭低k介電材料可具有不同密度及不同孔隙度。
如文中所述之「氧化矽」或「SiO2」材料係相當於自氧化矽前驅體來源沉積之材料,例如,TEOS、熱沉積氧化矽,或使用諸如SiLKTM、AURORATM、CORALTM、或BLACK DIAMONDTM之市售前驅體沉積之摻碳氧化物(CDO)。針對本說明之目的,「氧化矽」意欲廣義地包括SiO2、CDO、矽氧烷及熱氧化物。氧化矽或SiO2材料係相當於純氧化矽(SiO2)以及於結構中包含雜質的不純氧化矽。
如本文所使用之「氟化物」物質係相當於包括離子氟化物(F-)或共價鍵結氟之物質。應明瞭氟化物物質可作為氟化物物質包含或於原位產生。
如本文所定義之「含鍺材料」可為塊狀鍺晶圓、n-摻雜鍺、p-摻雜鍺、絕緣體上鍺(GOI)晶圓(在此情況該層係形成於基板頂部上之介電層上的鍺層)、基板上之鍺層、以及鍺化合物諸如鍺化鈦、鍺化鎢、鍺化鎳、及鍺化鈷。含鍺材料可為至少部分延伸於基板上方之連續層或可分割成個別區域。
矽-鍺(SiGe)為技藝中所知曉。取決於SiGe材料中Si相對於Ge的百分比,SiGe可粗略地歸類為含Si材料或含Ge材料。舉例來說,如SiGe材料具有大於50重量%之矽含量,則針對本揭示案之目的其將被視為含Si材料。如SiGe材料具有大於50重量%之鍺含量,則針對本揭示案之目的其將被視為含Ge材料。如要相對於SiGe移除Si(或反之亦然),則應明瞭SiGe為含鍺材料,而不管SiGe之原子組成為何。如要相對於SiGe移除Ge(或反之亦然),則應明瞭SiGe為含矽材料,而不管SiGe之原子組成為何。
如本文所使用之「約」係意指相當於所述值之±5%。
應明瞭一些化學組分當在其最低能量(即穩定)狀態中,特定言之在商業購得時,即自然包括可忽略量的水。針對本說明之目的,自然存在的水不被視為「添加水」。
本發明之組成物可以如更完整說明於下文之相當多樣的特定配方具體實施。
在所有該等組成物中,當參照包括零下限之重量百分比範圍論述組成物之特定組分時,當明瞭在組成物之各種特定具體例中可存在或不存在該等組分,且在存在該等組分之情況中,其可以基於其中使用該等組分之組成物之總重量計低至0.001重量百分比之濃度存在。
在第一態樣中,描述一種自微電子裝置之表面相對於含鍺材料選擇性移除含矽材料之組成物(以下稱為矽選擇性組成物)及其使用方法,該組成物包含至少一種二醇化合物、至少一種氟化物物質、及至少一種氧化物質,由其等所組成,或基本上由其等所組成。在另一具體例中,該矽選擇性組成物包含至少一種二醇化合物、至少一種氟化物物質、至少一種氧化物質、及水,由其等所組成,或基本上由其等所組成。
本文涵蓋的二醇物質包括脂族二醇,包括,但不限於,乙二醇、新戊二醇、丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、1,2-戊二醇、1,3-戊二醇、1,4-戊二醇、2,3-丁二醇、3-甲基-1,2-丁二醇、1,5-戊二醇、2-甲基-1,3-戊二醇、2,4-戊二醇、2-甲基-2,4-戊二醇、2,3-戊二醇、1,2-己二醇、2-乙基-1,3-己二醇、2,5-二甲基-2,5-己二醇、1,2-辛二醇及其組合。亦涵蓋包含超過兩個羥基之物質,諸如三醇(例如,甘油),及其中存在兩個有效羥
基且第三個經酯化或醚化之物質(例如,辛酸甘油酯、癒創木酚甘油醚)。較佳地,該至少一種二醇物質包括1,2-丁二醇。二醇物質之量係在約70重量%至約99重量%,較佳大於約75重量%至約98.8重量%之範圍內。
涵蓋的氟化物物質包括氫氟酸。或者,當需要含矽材料之較低蝕刻速率時,除HF外之氟化物來源可能有利,其包括,但不限於,六氟鈦酸、六氟矽酸、六氟鋯酸、四氟硼酸、三氟甲磺酸四丁銨、四氟硼酸四烷基銨(NR1R2R3R4BF4)諸如四氟硼酸四丁基銨、六氟磷酸四烷基銨(NR1R2R3R4PF6)、氟化四烷基銨(NR1R2R3R4F)(其無水或水合物)諸如氟化四甲基銨、氟化氫銨、氟化銨,其中R1、R2、R3、R4可彼此相同或不同且係選自由氫、直鏈或分支鏈C1-C6烷基(例如,甲基、乙基、丙基、丁基、戊基、己基)、C1-C6烷氧基(例如,羥乙基、羥丙基)、經取代或未經取代之芳基(例如,苄基)所組成之群。氟化物物質較佳包括氫氟酸。氟化物物質之量係在約0.01重量%至約5重量%之範圍內,較佳約0.1重量%至1重量%。
本文涵蓋之氧化物質包括,但不限於,過氧化氫、FeCl3、FeF3、Fe(NO3)3、Sr(NO3)2、CoF3、MnF3、發氧方(oxone)(2KHSO5˙KHSO4˙K2SO4)、過碘酸、碘酸、氧化釩(V)、氧化釩(IV、V)、釩酸銨、過氧單硫酸銨、亞氯酸銨、氯酸銨、碘酸銨、硝酸銨、過硼酸銨、過氯酸銨、過碘酸銨、過硫酸銨、次氯酸銨、次溴酸銨、鎢酸銨、過硫酸鈉、次氯酸鈉、過硼酸鈉、次溴酸鈉、碘酸鉀、過錳酸鉀、過硫酸鉀、硝酸、過硫酸鉀、次氯酸鉀、亞氯酸四甲銨、氯酸四甲銨、碘酸四甲銨、過硼酸四甲銨、過氯酸
四甲銨、過碘酸四甲銨、過硫酸四甲銨、過氧單硫酸四丁銨、過氧單硫酸、硝酸鐵、尿素過氧化氫、過乙酸、甲基-1,4-苯醌(MBQ)、1,4-苯醌(BQ)、1,2-苯醌、2,6-二氯-1,4-苯醌(DCBQ)、甲苯醌、2,6-二甲基-1,4-苯醌(DMBQ)、四氯苯醌、四氧嘧啶(alloxan)、N-甲基啉N-氧化物、三甲胺N-氧化物、及其組合。氧化物質可在製造商處、在將組成物引入至裝置晶圓之前、或者於裝置晶圓處(即於原位)引入至組成物。氧化物質較佳包含醌化合物、過氧化氫、過乙酸、碘酸銨、或其任何組合。當存在時,氧化物質之量係在約0.01重量%至約10重量%之範圍內,較佳約0.1重量%至1重量%。
當存在時,水較佳為去離子水且以約0.1重量%至約40重量%之量存在。較佳地,矽選擇性組成物中之水量係在約0.1重量%至約30重量%之範圍內,且甚至更佳約0.1重量%至約20重量%。
應明瞭可調整矽選擇性組成物以改變含矽材料、含鍺材料及含矽材料相對於含鍺材料之蝕刻速率,此係熟悉技藝人士所可輕易地明瞭及決定。最佳地,在25℃下含矽化合物:含鍺化合物(Si:Ge)之選擇性係大於3:1,更佳大於4:1,及最佳等於或大於5:1,其中利用較弱氧化劑的含矽材料蝕刻速率大於約4埃/分鐘,或利用較強氧化劑時高至約33埃/分鐘。
在一具體例中,第一態樣之矽選擇性組成物包含1,2-、1,3-、或1,4-丁二醇、HF、水、及甲基-1,4-苯醌,由其等所組成,或基本上由其等所組成。
在第二態樣中,描述一種自微電子裝置之表面相對於含矽材料選擇性移除含鍺材料之組成物(後文稱為鍺選擇性組成物)
及其使用方法,該組成物包含至少一種二醇化合物及水,由其等所組成,或基本上由其等所組成。在另一具體例中,鍺選擇性組成物包含至少一種二醇化合物、至少一種氟化物物質、及水,由其等所組成,或基本上由其等所組成,其中該組成物實質上不含氧化劑。在又另一具體例中,鍺選擇性組成物包含至少一種二醇化合物、至少一種氧化劑、及水,由其等所組成,或基本上由其等所組成,其中該組成物實質上不含氟化物物質。二醇化合物、氟化物物質及氧化劑之物質列於前文第一態樣中。當存在時,水較佳為去離子水且以約0.1重量%至約40重量%之量存在。較佳地,鍺選擇性組成物中之水量係在約0.1重量%至約30重量%之範圍內,更佳在約0.1重量%至約20重量%之範圍內。針對最大選擇性,將氟化物含量保持低於0.5%之低值、或零。因此,當存在時,氟化物物質之量係在約0.01重量%至約0.5重量%之範圍內。在不存在氟化物時,較強氧化劑(諸如DCBQ)亦使Ge蝕刻速率增加超過Si蝕刻速率且因此增加選擇性。當存在時,氧化物質之量係在約0.01重量%至約5重量%之範圍內,較佳約0.1重量%至1重量%。第二組成物中二醇物質之量係在約70重量%至約99重量%之範圍內,較佳大於約75重量%至約98.8重量%。
應明瞭可調整鍺選擇性組成物以改變含矽材料、含鍺材料及含鍺材料相對於含矽材料之蝕刻速率,此係熟悉技藝人士所可輕易地明瞭及決定。最佳地,在25℃下含鍺化合物:含矽化合物(Ge:Si)之選擇性係大於約30:1,更佳大於約40:1,及最佳大於約50:1,其中利用強氧化劑的含鍺材料蝕刻速率大於約3埃/分鐘。
在一具體例中,第二態樣之鍺選擇性組成物包含
1,2-、1,3-、或1,4-丁二醇、HF、及水,由其等所組成,或基本上由其等所組成。在另一具體例中,第二態樣之鍺選擇性組成物包含1,2-、1,3-、或1,4-丁二醇、甲基-1,4-苯醌或DCBQ、及水,由其等所組成,或基本上由其等所組成。
在第三態樣中,描述一種用於清潔或擴大包含具有不同Si/Ge比之SiGe材料之通道、及視情況Si及Ge之膜及/或基板的非選擇性半導體蝕刻(NSSE)組成物及其使用方法。該非選擇性半導體蝕刻組成物應足夠溫和及/或可控制,來以相同速率清潔及蝕刻所有經暴露的含矽及含鍺材料。換言之,非選擇性半導體蝕刻組成物應具有實質上與含鍺材料相同之含矽材料的蝕刻速率。該等組成物可為滿足蝕刻速率標準之第一態樣或第二態樣中之任一者。
當明瞭一般實務係製造濃縮形式的組成物以在使用之前稀釋。舉例而言,組成物可以更為濃縮的形式製造,其後再在製造商處、在使用前、及/或在工廠在使用期間以水、額外的水、至少一種二醇、或額外的二醇稀釋。稀釋比率可在約0.1份稀釋劑:1份組成物濃縮物至約100份稀釋劑:1份組成物濃縮物範圍內。若使用醌作為氧化劑,則可使用醌於抗氧化(較佳非質子性)溶劑(例如,四氫噻吩碸或四甘醇二甲醚)中之濃溶液(例如5-10%)作為待於使用前方才添加至配方的醌來源。
文中所述之組成物係經由簡單地添加各別成分及混合至均勻狀態而容易地調配得。此外,可輕易地將組成物調配為單一包裝配方或在使用點處或使用點前混合的多份配方,較佳係多份配方。可將多份配方之個別份於工具處或於混合區域/範圍(諸如線上混合器)或於工具上游之儲槽中混合。涵蓋多份配方之各個份
可包含成分/組分之任何組合,其當混合在一起時形成期望的組成物。各別成分的濃度可在組成物的特定倍數內寬廣地改變,即更稀或更濃,且當明瞭組成物可變化及替代地包含與本文之揭示內容一致之成分的任何組合,由其等所組成,或基本上由其等所組成。
在第四態樣中,本發明係關於文中所述之第一、第二或第三態樣之組成物的使用方法。舉例來說,涵蓋一種使用矽選擇性組成物自微電子裝置之表面相對於含鍺材料選擇性移除含矽材料之方法。或者,涵蓋一種使用鍺選擇性組成物自微電子裝置之表面相對於含矽材料選擇性移除含鍺材料之方法。在又另一選擇中,涵蓋一種使用NSSE組成物自微電子裝置之表面以與含鍺材料實質上相同之速率移除含矽材料的方法。
在蝕刻應用中,具有較佳最終結果之特定組成物係以任何適當方式施用至微電子裝置之表面,例如,經由將組成物噴塗於裝置之表面上,經由將裝置浸泡(於靜態或動態體積之組成物中),經由使裝置與其上吸收有組成物之另一材料(例如,墊、或纖維吸收性塗布器元件)接觸,經由使包括氮化矽材料之裝置與循環的組成物接觸,或藉由任何其他藉以使組成物與含矽材料及含鍺材料進行移除接觸之適當手段、方式或技術。該應用係可於批式或單一晶圓裝置中用於動態或靜態清潔。
在使用文中所述之第一、第二或第三態樣之組成物時,典型上使該組成物與裝置結構在約20℃至約100℃範圍內,較佳約25℃至約70℃之溫度下接觸約1分鐘至約200分鐘,較佳約5分鐘至約60分鐘之足夠時間。該等接觸時間及溫度係為說明性,可使用任何其他可有效達成所需移除選擇性之適宜時間及溫度條
件。
在一具體例中,組成物係在傳遞至裝置結構的期間線上加熱。藉由於線上,而非於浴槽本身中加熱,組成物之壽命增長。
於達成期望的蝕刻作用後,可輕易地將組成物自其先前經施用的微電子裝置移除,例如,藉由可能係在本發明組成物的給定最終應用中所期望且有效的沖洗、洗滌、或其他移除步驟。舉例來說,裝置可經包括去離子水的沖洗溶液沖洗及/或乾燥(例如,旋轉乾燥、N2、蒸氣乾燥等)。如鍺或高鍺膜經暴露,則較佳的沖洗為實質上非水性,例如,異丙醇(IPA)。
本發明之又另一態樣係關於根據文中所述方法製得之經改良的微電子裝置及包含此等微電子裝置之產品。
本發明之另一態樣係關於一種製造物件,其包括以下各物,由其等所組成或基本上由其等所組成:微電子裝置基板、含矽材料、含鍺材料、及文中所述之第一、第二或第三態樣之組成物。
本發明之特徵及優點由以下論述的說明性實施例作更完整展示。
製備矽選擇性組成物及測定鍺、氧化鍺及多晶Si之蝕刻速率。在該等組成物中,組成物的其餘部分為溶劑。將其上具有毯覆式鍺、氧化鍺及多晶Si之試樣於各組成物中在25℃下浸泡30分鐘及測定各別材料之移除量。矽選擇性組成物及結果示於表1。
表1:矽選擇性組成物
BD=丁二醇
MBQ=甲基-1,4-苯醌(即甲苯醌)
EG=乙二醇
PG=丙二醇
BQ=1,4-苯醌
DCBQ=2,6-二氯-1,4-苯醌
DMBQ=2,6-二甲基-1,4-苯醌
由表1中之結果可看見含矽材料可相對於含鍺材料優先蝕刻性地移除,且可基於所選組分輕易地調整移除選擇性。此外,可調整矽選擇性組成物以改變含矽材料之蝕刻速率。
本發明人提出諸如配方K之配方可有效作為如文中所引介之NSSE組成物。
製備鍺選擇性組成物及測定鍺、氧化鍺及多晶Si之蝕刻速率。在該等組成物中,組成物的其餘部分為溶劑。將其上具有毯覆式鍺、氧化鍺及多晶Si之試樣於各組成物中在25℃下浸泡
30分鐘及測定各別材料之移除量。鍺選擇性組成物及結果示於表2。
由表2中之結果可看見含鍺材料可相對於含矽材料優先蝕刻性地移除,儘管含鍺材料之蝕刻速率在大多數情況中並不特別高。換言之,可看見可調配鍺選擇性組成物以獲致於30分鐘內大於20埃之Ge損耗,且在其中使用較強氧化劑的一例(UU)中大於100埃。預期該數據可於較高蝕刻溫度下外推。
可自表1及2外推的一些觀察包括:(a)鍺的蝕刻速率比矽的蝕刻速率更受水影響;(b)矽的蝕刻速率比鍺的蝕刻速率更受氧化劑影響;(c)鍺的蝕刻速率相比矽的蝕刻速率較不受氟化物之存在影響;及(d)二醇之脂族尾部可為鍺蝕刻速率的良好抑制劑。
雖然本發明已參照本發明之特定態樣、特徵及說明性具體例描述於文中,但當明瞭本發明之效用並不因此受限,而係可延伸至涵蓋熟悉本發明領域人士基於文中之揭示內容當可明白的許多其他變化、修改及替代具體例。相應地,後文所主張之本發明意欲經廣泛地解釋及詮釋為包括於其精神及範疇內之所有該等變化、修改及替代具體例。
Claims (10)
- 一種自微電子裝置之表面相對於含鍺材料選擇性移除含矽材料之方法,該方法包括使矽選擇性組成物與微電子裝置之表面以相對於含鍺材料選擇性移除含矽材料所需的時間及溫度接觸,其中該矽選擇性組成物包含至少一種二醇化合物、至少一種氟化物物質、及至少一種氧化物質,且在25℃下具有大於3:1之含矽化合物:含鍺化合物(Si:Ge)的選擇性。
- 如請求項1之方法,其中該矽選擇性組成物進一步包含水。
- 如請求項1或2之方法,其中該至少一種二醇化合物包括選自由下列所組成之群之物質:乙二醇、新戊二醇、丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、1,2-戊二醇、1,3-戊二醇、1,4-戊二醇、2,3-丁二醇、3-甲基-1,2-丁二醇、1,5-戊二醇、2-甲基-1,3-戊二醇、2,4-戊二醇、2-甲基-2,4-戊二醇、2,3-戊二醇、1,2-己二醇、2-乙基-1,3-己二醇、2,5-二甲基-2,5-己二醇、1,2-辛二醇及其組合。
- 如請求項1或2之方法,其中該至少一種氟化物物質包括選自由下列所組成之群之物質:氫氟酸、六氟鈦酸、六氟矽酸、六氟鋯酸、四氟硼酸、三氟甲磺酸四丁銨、四氟硼酸四烷基銨(NR1R2R3R4BF4)、六氟磷酸四烷基銨(NR1R2R3R4PF6)、氟化四烷基銨(NR1R2R3R4F)、氟化氫銨、氟化銨,其中R1、R2、R3、R4可彼此相同或不同且係選自由氫、直鏈或分支鏈C1-C6烷基、C1-C6烷氧基、或經取代或未經取代之芳基所組成之群。
- 如請求項1或2之方法,其中該至少一種氧化物質包括選自由下列所組成之群之物質:過氧化氫、FeCl3、FeF3、Fe(NO3)3、Sr(NO3)2、CoF3、MnF3、發氧方(oxone)(2KHSO5˙KHSO4˙K2SO4)、過碘酸、碘酸、氧化釩(V)、氧化釩(IV、V)、釩酸銨、過氧單硫酸銨、亞氯酸銨、氯酸銨、碘酸銨、硝酸銨、過硼酸銨、過氯酸銨、過碘酸銨、過硫酸銨、次氯酸銨、次溴酸銨、鎢酸銨、過硫酸鈉、次氯酸鈉、過硼酸鈉、次溴酸鈉、碘酸鉀、過錳酸鉀、過硫酸鉀、硝酸、過硫酸鉀、次氯酸鉀、亞氯酸四甲銨、氯酸四甲銨、碘酸四甲銨、過硼酸四甲銨、過氯酸四甲銨、過碘酸四甲銨、過硫酸四甲銨、過氧單硫酸四丁銨、過氧單硫酸、硝酸鐵、尿素過氧化氫、過乙酸、甲基-1,4-苯醌(MBQ)、1,4-苯醌(BQ)、1,2-苯醌、2,6-二氯-1,4-苯醌(DCBQ)、甲苯醌、2,6-二甲基-1,4-苯醌(DMBQ)、四氯苯醌、四氧嘧啶(alloxan)、N-甲基啉N-氧化物、三甲胺N-氧化物、及其組合。
- 如請求項2之方法,其中該矽選擇性組成物中之水量係在約0.1重量%至約40重量%之範圍內。
- 如請求項1或2之方法,其中該含矽材料之蝕刻速率係大於4埃/分鐘。
- 如請求項1或2之方法,其中該含矽材料包含下列中之至少一者:矽;n-摻雜矽;p-摻雜矽;氧化矽、閘氧化物;TEOS;氮化矽;熱氧化物;SiOH;SiCOH;矽化鈦;矽化鎢;矽化鎳;矽化鈷;及低k介電材料,及其中該含鍺材料包含下列中之至少一者:塊狀鍺晶圓、n-摻雜鍺、p-摻雜鍺、絕緣體上鍺(GOI)晶圓、基板上之鍺層、鍺化鈦、鍺化鎢、鍺化鎳、及鍺化鈷。
- 一種自微電子裝置之表面相對於含矽材料選擇性移除含鍺材料之方法,該方法包括使鍺選擇性組成物與微電子裝置之表面以相對於含矽材料選擇性移除含鍺材料所需的時間及溫度接觸,其中該鍺選擇性組成物包含至少一種二醇化合物及水,且其中該鍺選擇性組成物進一步包含至少一種含量低於0.5wt%之氟化物物質。
- 如請求項9之方法,其中在約20℃至約100℃範圍內之溫度下,時間係在約1分鐘至約200分鐘範圍內。
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TW200947555A (en) * | 2008-02-01 | 2009-11-16 | Newsouth Innovations Pty Ltd | Method for patterned etching of selected material |
TW201250818A (en) * | 2011-05-17 | 2012-12-16 | Fujifilm Corp | Etching method and etching liquid used therein, manufacturing method of semiconductor element using the same |
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TW201533220A (zh) | 2015-09-01 |
US10475658B2 (en) | 2019-11-12 |
US20160343576A1 (en) | 2016-11-24 |
WO2015103146A1 (en) | 2015-07-09 |
KR102290209B1 (ko) | 2021-08-20 |
KR20160104045A (ko) | 2016-09-02 |
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