JP4826235B2 - 半導体表面処理剤 - Google Patents
半導体表面処理剤 Download PDFInfo
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- JP4826235B2 JP4826235B2 JP2005348105A JP2005348105A JP4826235B2 JP 4826235 B2 JP4826235 B2 JP 4826235B2 JP 2005348105 A JP2005348105 A JP 2005348105A JP 2005348105 A JP2005348105 A JP 2005348105A JP 4826235 B2 JP4826235 B2 JP 4826235B2
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- Prior art keywords
- acid
- fluoride
- dielectric constant
- insulating material
- high dielectric
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- 239000004065 semiconductor Substances 0.000 title claims description 39
- 239000012756 surface treatment agent Substances 0.000 title claims description 16
- 239000011810 insulating material Substances 0.000 claims description 67
- 238000005530 etching Methods 0.000 claims description 42
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- 150000002222 fluorine compounds Chemical class 0.000 claims description 15
- 239000003960 organic solvent Substances 0.000 claims description 14
- 150000007522 mineralic acids Chemical class 0.000 claims description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 8
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims description 4
- -1 glycol ethers Chemical class 0.000 claims description 4
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- 235000003270 potassium fluoride Nutrition 0.000 claims description 4
- 239000011698 potassium fluoride Substances 0.000 claims description 4
- 235000013024 sodium fluoride Nutrition 0.000 claims description 4
- 239000011775 sodium fluoride Substances 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 claims description 3
- 150000002596 lactones Chemical class 0.000 claims description 2
- 150000002825 nitriles Chemical class 0.000 claims description 2
- 150000003462 sulfoxides Chemical class 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000007769 metal material Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 150000007524 organic acids Chemical class 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- ODNBVEIAQAZNNM-UHFFFAOYSA-N 1-(6-chloroimidazo[1,2-b]pyridazin-3-yl)ethanone Chemical compound C1=CC(Cl)=NN2C(C(=O)C)=CN=C21 ODNBVEIAQAZNNM-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- HZNVUJQVZSTENZ-UHFFFAOYSA-N 2,3-dichloro-5,6-dicyano-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(C#N)=C(C#N)C1=O HZNVUJQVZSTENZ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- PTOKDFKDUYQOAK-UHFFFAOYSA-N 2-aminoethanol;hydrofluoride Chemical compound F.NCCO PTOKDFKDUYQOAK-UHFFFAOYSA-N 0.000 description 1
- FHCUSSBEGLCCHQ-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;fluoride Chemical compound [F-].C[N+](C)(C)CCO FHCUSSBEGLCCHQ-UHFFFAOYSA-M 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- GUNJVIDCYZYFGV-UHFFFAOYSA-K Antimony trifluoride Inorganic materials F[Sb](F)F GUNJVIDCYZYFGV-UHFFFAOYSA-K 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- VVRKSAMWBNJDTH-UHFFFAOYSA-N difluorophosphane Chemical compound FPF VVRKSAMWBNJDTH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- LZCVHHFGMKXLBU-UHFFFAOYSA-N ethanamine;hydrofluoride Chemical compound [F-].CC[NH3+] LZCVHHFGMKXLBU-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- RRSMHQNLDRCPQG-UHFFFAOYSA-N methanamine;hydrofluoride Chemical compound [F-].[NH3+]C RRSMHQNLDRCPQG-UHFFFAOYSA-N 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- DSISTIFLMZXDDI-UHFFFAOYSA-N propan-1-amine;hydrofluoride Chemical compound F.CCCN DSISTIFLMZXDDI-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 description 1
- 229960002799 stannous fluoride Drugs 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- POVVSDFLZJPOGC-UHFFFAOYSA-M tetraethoxyazanium;fluoride Chemical compound [F-].CCO[N+](OCC)(OCC)OCC POVVSDFLZJPOGC-UHFFFAOYSA-M 0.000 description 1
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 description 1
- CDBDGDCGJJCJSD-UHFFFAOYSA-M triethoxy(methyl)azanium;fluoride Chemical compound [F-].CCO[N+](C)(OCC)OCC CDBDGDCGJJCJSD-UHFFFAOYSA-M 0.000 description 1
- ASVMCHUOIVTKQQ-UHFFFAOYSA-M triethyl(methyl)azanium;fluoride Chemical compound [F-].CC[N+](C)(CC)CC ASVMCHUOIVTKQQ-UHFFFAOYSA-M 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Description
シリコンウェハ基板上に、絶縁材料であるth−SiO2、さらに高誘電率絶縁材料であるHfO2を形成したウェハサンプルを用い、エッチング性能の確認を行った。その結果を表1に示した。
なお、高誘電率絶縁材料であるHfO2の評価基準は次の通りである。
○:HfO2のエッチング程度が大きかった(30Å/分以上)
×:HfO2のエッチング程度が小さかった(30Å/分以下)
なお、評価基準は次の通りである。
○:HfO2とth−SiO2とのエッチング選択比が1よりも大きかった
×:HfO2とth−SiO2とのエッチング選択比が1よりも小さかった
表2に示した組成の半導体表面処理剤で処理を行って、高誘電率絶縁材料であるAl2O3の確認を行った。また、絶縁材料であるth−SiO2のエッチング性能の確認を行い、Al2O3のエッチング性能との比較を行った。その結果を表2に示した。
表3に示した組成の半導体表面処理剤で処理を行って、高誘電率絶縁材料であるHfSiONの確認を行った。また、絶縁材料であるth−SiO2のエッチング性能の確認を行い、HfSiONのエッチング性能との比較を行った。その結果を表3に示した。
Claims (4)
- Al 2 O 3 、HfO 2 、Ta 2 O 5 、Y 2 O 3 、またはZrO 2 、並びにこれらに珪素原子及び/または窒素原子を含む高誘電率絶縁材料をエッチングする処理剤であって、フッ化アンモニウム、酸性フッ化アンモニウム、フッ化テトラメチルアンモニウム、フッ化ナトリウム、及びフッ化カリウムから選ばれる少なくとも1種であるフッ素化合物と水溶性有機溶剤と硫酸、硝酸、塩酸、亜硝酸、及びアミド硫酸から選ばれる少なくとも1種である無機酸を含有し、残部が水からなることを特徴とする半導体表面処理剤。
- フッ素化合物0.001〜10重量%、水溶性有機溶剤1〜99重量%、無機酸0.01〜50重量%である請求項1記載の半導体表面処理剤。
- 前記水溶性有機溶剤がアミド類、ラクトン類、スルホキシド類、ニトリル類、アルコール類、及びグリコールエーテル類から選ばれる少なくとも1種である請求項1または2記載の半導体表面処理剤。
- フッ化アンモニウム、酸性フッ化アンモニウム、フッ化テトラメチルアンモニウム、フッ化ナトリウム、及びフッ化カリウムから選ばれる少なくとも1種であるフッ素化合物と水溶性有機溶剤と硫酸、硝酸、塩酸、亜硝酸、及びアミド硫酸から選ばれる少なくとも1種である無機酸を含有し、残部が水からなることを特徴とする半導体表面処理剤を用い、Al 2 O 3 、HfO 2 、Ta 2 O 5 、Y 2 O 3 、またはZrO 2 、並びにこれらに珪素原子及び/または窒素原子を含む高誘電率絶縁材料をエッチングすることを特徴とする半導体デバイスの製造方法。
Priority Applications (7)
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JP2005348105A JP4826235B2 (ja) | 2005-12-01 | 2005-12-01 | 半導体表面処理剤 |
US12/095,152 US20090246967A1 (en) | 2005-12-01 | 2006-11-30 | Semiconductor surface treatment agent |
EP06833742A EP1956644A4 (en) | 2005-12-01 | 2006-11-30 | MEANS FOR TREATING A SEMICONDUCTOR SURFACE |
PCT/JP2006/323939 WO2007063942A1 (ja) | 2005-12-01 | 2006-11-30 | 半導体表面処理剤 |
CNA2006800434856A CN101313391A (zh) | 2005-12-01 | 2006-11-30 | 半导体表面处理剂 |
TW095144577A TW200731394A (en) | 2005-12-01 | 2006-12-01 | A reagent for surface treatment of semi-conductor |
KR1020087012679A KR101275448B1 (ko) | 2005-12-01 | 2008-05-27 | 반도체 표면 처리제 |
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JP2005348105A JP4826235B2 (ja) | 2005-12-01 | 2005-12-01 | 半導体表面処理剤 |
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JP2007157839A JP2007157839A (ja) | 2007-06-21 |
JP4826235B2 true JP4826235B2 (ja) | 2011-11-30 |
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US (1) | US20090246967A1 (ja) |
EP (1) | EP1956644A4 (ja) |
JP (1) | JP4826235B2 (ja) |
KR (1) | KR101275448B1 (ja) |
CN (1) | CN101313391A (ja) |
TW (1) | TW200731394A (ja) |
WO (1) | WO2007063942A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4326928B2 (ja) * | 2003-12-09 | 2009-09-09 | 株式会社東芝 | フォトレジスト残渣除去液組成物及び該組成物を用いる半導体回路素子の製造方法 |
JP4998337B2 (ja) * | 2008-03-11 | 2012-08-15 | Tdk株式会社 | 誘電体素子の製造方法 |
SG176188A1 (en) * | 2009-05-21 | 2011-12-29 | Stella Chemifa Corp | Cleaning liquid and cleaning method |
US8859411B2 (en) * | 2010-08-20 | 2014-10-14 | Mitsubishi Gas Chemical Company, Inc. | Method for producing transistor |
JPWO2012066894A1 (ja) * | 2010-11-19 | 2014-05-12 | 三菱瓦斯化学株式会社 | 半導体基板の洗浄用液体組成物およびそれを用いた半導体基板の洗浄方法 |
CN102586780B (zh) * | 2012-02-21 | 2014-01-15 | 上海正帆科技有限公司 | 一种酸性蚀刻液及其制备方法和应用 |
US9012318B2 (en) * | 2012-09-21 | 2015-04-21 | Micron Technology, Inc. | Etching polysilicon |
KR102290209B1 (ko) * | 2013-12-31 | 2021-08-20 | 엔테그리스, 아이엔씨. | 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물 |
JP6402007B2 (ja) * | 2014-11-14 | 2018-10-10 | 野村マイクロ・サイエンス株式会社 | レジスト剥離液及びレジスト剥離方法 |
US10957547B2 (en) | 2015-07-09 | 2021-03-23 | Entegris, Inc. | Formulations to selectively etch silicon germanium relative to germanium |
KR102525050B1 (ko) * | 2016-10-07 | 2023-04-26 | 삼성전자주식회사 | 습식 식각 방법 및 이를 이용한 반도체 소자의 제조방법 |
CN107759816B (zh) * | 2017-08-31 | 2020-08-28 | 中国石油大学(华东) | 一种碳纤维复合材料的表面处理方法 |
SG11202107622UA (en) * | 2019-01-23 | 2021-08-30 | Central Glass Co Ltd | Dry etching method, and dry etching agent and storage container therefor |
CN111019659B (zh) * | 2019-12-06 | 2021-06-08 | 湖北兴福电子材料有限公司 | 一种选择性硅蚀刻液 |
WO2024048269A1 (ja) * | 2022-08-29 | 2024-03-07 | 東京エレクトロン株式会社 | 基板処理方法、および基板処理装置 |
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JP3264405B2 (ja) | 1994-01-07 | 2002-03-11 | 三菱瓦斯化学株式会社 | 半導体装置洗浄剤および半導体装置の製造方法 |
US6562726B1 (en) * | 1999-06-29 | 2003-05-13 | Micron Technology, Inc. | Acid blend for removing etch residue |
TW580736B (en) * | 2000-04-27 | 2004-03-21 | Hitachi Ltd | Fabrication method for semiconductor device |
US6656852B2 (en) * | 2001-12-06 | 2003-12-02 | Texas Instruments Incorporated | Method for the selective removal of high-k dielectrics |
JP4010819B2 (ja) * | 2002-02-04 | 2007-11-21 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2003332297A (ja) | 2002-05-10 | 2003-11-21 | Daikin Ind Ltd | エッチング液及びエッチング方法 |
US20040188385A1 (en) * | 2003-03-26 | 2004-09-30 | Kenji Yamada | Etching agent composition for thin films having high permittivity and process for etching |
EP1511074B1 (en) * | 2003-08-01 | 2015-01-28 | Imec | A method for selective removal of high-K material |
JP2005097715A (ja) * | 2003-08-19 | 2005-04-14 | Mitsubishi Chemicals Corp | チタン含有層用エッチング液及びチタン含有層のエッチング方法 |
WO2005019499A1 (ja) * | 2003-08-20 | 2005-03-03 | Daikin Industries, Ltd. | 金属変質層の除去液及び金属変質層の除去方法 |
JP2005079316A (ja) * | 2003-08-29 | 2005-03-24 | Semiconductor Leading Edge Technologies Inc | エッチング方法及び半導体装置の製造方法 |
WO2005053004A1 (en) * | 2003-11-19 | 2005-06-09 | Honeywell International Inc. | Selective removal chemistries for sacrificial layers methods of production and uses thereof |
JP2005167087A (ja) * | 2003-12-04 | 2005-06-23 | Tokyo Electron Ltd | クリーニング方法及び半導体製造装置 |
JP2005189463A (ja) * | 2003-12-25 | 2005-07-14 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
JP2005209953A (ja) * | 2004-01-23 | 2005-08-04 | Tokyo Ohka Kogyo Co Ltd | 剥離洗浄液、該剥離洗浄液を用いた半導体基板洗浄方法および金属配線形成方法 |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
US20070012662A1 (en) * | 2005-07-18 | 2007-01-18 | Audrey Dupont | Solution for wet treatment of hafnium containing materials, use of the solution and a wet treatment process |
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2006
- 2006-11-30 US US12/095,152 patent/US20090246967A1/en not_active Abandoned
- 2006-11-30 CN CNA2006800434856A patent/CN101313391A/zh active Pending
- 2006-11-30 EP EP06833742A patent/EP1956644A4/en not_active Withdrawn
- 2006-11-30 WO PCT/JP2006/323939 patent/WO2007063942A1/ja active Application Filing
- 2006-12-01 TW TW095144577A patent/TW200731394A/zh unknown
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KR20080071570A (ko) | 2008-08-04 |
EP1956644A1 (en) | 2008-08-13 |
WO2007063942A1 (ja) | 2007-06-07 |
CN101313391A (zh) | 2008-11-26 |
EP1956644A4 (en) | 2009-05-20 |
US20090246967A1 (en) | 2009-10-01 |
KR101275448B1 (ko) | 2013-06-14 |
TW200731394A (en) | 2007-08-16 |
JP2007157839A (ja) | 2007-06-21 |
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