TWI636011B - 基板內矽佈植及其之矽前驅物組合物之供給 - Google Patents
基板內矽佈植及其之矽前驅物組合物之供給 Download PDFInfo
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- TWI636011B TWI636011B TW103128139A TW103128139A TWI636011B TW I636011 B TWI636011 B TW I636011B TW 103128139 A TW103128139 A TW 103128139A TW 103128139 A TW103128139 A TW 103128139A TW I636011 B TWI636011 B TW I636011B
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- FTIMWVSQXCWTAW-UHFFFAOYSA-N ruthenium Chemical compound [Ru].[Ru] FTIMWVSQXCWTAW-UHFFFAOYSA-N 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XGZGDYQRJKMWNM-UHFFFAOYSA-N tantalum tungsten Chemical compound [Ta][W][Ta] XGZGDYQRJKMWNM-UHFFFAOYSA-N 0.000 description 1
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 1
- SCDRTJUIDWUVQX-UHFFFAOYSA-N tetrafluoroarsenic Chemical compound F[As](F)(F)F SCDRTJUIDWUVQX-UHFFFAOYSA-N 0.000 description 1
- CSRXPKRQTCTNOE-UHFFFAOYSA-J tetrafluoroosmium Chemical compound F[Os](F)(F)F CSRXPKRQTCTNOE-UHFFFAOYSA-J 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Catalysts (AREA)
Applications Claiming Priority (2)
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| US201361866918P | 2013-08-16 | 2013-08-16 | |
| US61/866,918 | 2013-08-16 |
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| TW201514095A TW201514095A (zh) | 2015-04-16 |
| TWI636011B true TWI636011B (zh) | 2018-09-21 |
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| TW103128139A TWI636011B (zh) | 2013-08-16 | 2014-08-15 | 基板內矽佈植及其之矽前驅物組合物之供給 |
| TW106143532A TWI654136B (zh) | 2013-08-16 | 2014-08-15 | 基板內矽佈植及其之矽前驅物組合物之供給 |
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| TW106143532A TWI654136B (zh) | 2013-08-16 | 2014-08-15 | 基板內矽佈植及其之矽前驅物組合物之供給 |
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| EP (1) | EP3033765A4 (cg-RX-API-DMAC7.html) |
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| CN (1) | CN105637616A (cg-RX-API-DMAC7.html) |
| SG (2) | SG11201601015RA (cg-RX-API-DMAC7.html) |
| TW (2) | TWI636011B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2015023903A1 (cg-RX-API-DMAC7.html) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9887067B2 (en) * | 2014-12-03 | 2018-02-06 | Varian Semiconductor Equipment Associates, Inc. | Boron implanting using a co-gas |
| US9620376B2 (en) * | 2015-08-19 | 2017-04-11 | Lam Research Corporation | Self limiting lateral atomic layer etch |
| TWI707378B (zh) * | 2016-04-08 | 2020-10-11 | 美商瓦里安半導體設備公司 | 將加工物質植入工件中與將摻雜劑植入工件中的方法及用於加工工件的設備 |
| US20170294314A1 (en) * | 2016-04-11 | 2017-10-12 | Aaron Reinicker | Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current |
| US20170330725A1 (en) | 2016-05-13 | 2017-11-16 | Axcelis Technologies, Inc. | Lanthanated tungsten ion source and beamline components |
| KR102202345B1 (ko) * | 2016-05-13 | 2021-01-12 | 엔테그리스, 아이엔씨. | 질소 이온 주입에서의 이온 소스 성능 개선을 위한 플루오르화된 조성물 |
| US10361081B2 (en) * | 2016-11-24 | 2019-07-23 | Axcelis Technologies, Inc. | Phosphine co-gas for carbon implants |
| US10256069B2 (en) * | 2016-11-24 | 2019-04-09 | Axcelis Technologies, Inc. | Phosphorous trifluoride co-gas for carbon implants |
| US10177026B2 (en) * | 2016-11-29 | 2019-01-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and fabrication method therefor |
| CN113261074B (zh) * | 2018-12-15 | 2025-01-07 | 恩特格里斯公司 | 氟离子植入方法和系统 |
| JP7416270B2 (ja) * | 2020-08-26 | 2024-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハ及びその製造方法、並びに半導体デバイスの製造方法 |
| US11881376B2 (en) * | 2020-10-02 | 2024-01-23 | Entegris, Inc. | Method and systems useful for producing aluminum ions |
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| US20160211137A1 (en) | 2016-07-21 |
| TW201808803A (zh) | 2018-03-16 |
| KR102306410B1 (ko) | 2021-09-28 |
| SG11201601015RA (en) | 2016-03-30 |
| EP3033765A4 (en) | 2017-08-16 |
| EP3033765A1 (en) | 2016-06-22 |
| TWI654136B (zh) | 2019-03-21 |
| JP2016534560A (ja) | 2016-11-04 |
| JP2019134171A (ja) | 2019-08-08 |
| JP6783338B2 (ja) | 2020-11-11 |
| WO2015023903A1 (en) | 2015-02-19 |
| KR20160043066A (ko) | 2016-04-20 |
| CN105637616A (zh) | 2016-06-01 |
| TW201514095A (zh) | 2015-04-16 |
| US11062906B2 (en) | 2021-07-13 |
| SG10201801299YA (en) | 2018-03-28 |
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