JP2016534560A - 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供 - Google Patents

基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供 Download PDF

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Publication number
JP2016534560A
JP2016534560A JP2016534851A JP2016534851A JP2016534560A JP 2016534560 A JP2016534560 A JP 2016534560A JP 2016534851 A JP2016534851 A JP 2016534851A JP 2016534851 A JP2016534851 A JP 2016534851A JP 2016534560 A JP2016534560 A JP 2016534560A
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Japan
Prior art keywords
silicon
gas
sih
silicon precursor
formula
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Pending
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JP2016534851A
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English (en)
Japanese (ja)
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JP2016534560A5 (cg-RX-API-DMAC7.html
Inventor
タン，イン
スウィーニー，ジョセフ・ディー
チェン，ティエンニウ
メイヤー，ジェームズ・ジェイ
レイ，リチャード・エス
ビル，オレグ
イェデイブ，シャラド・エヌ
カイム，ロバート
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Entegris Inc
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Entegris Inc
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Publication of JP2016534560A publication Critical patent/JP2016534560A/ja
Publication of JP2016534560A5 publication Critical patent/JP2016534560A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
JP2016534851A 2013-08-16 2014-08-14 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供 Pending JP2016534560A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361866918P 2013-08-16 2013-08-16
US61/866,918 2013-08-16
PCT/US2014/051162 WO2015023903A1 (en) 2013-08-16 2014-08-14 Silicon implantation in substrates and provision of silicon precursor compositions therefor

Related Child Applications (1)

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JP2019044461A Division JP6783338B2 (ja) 2013-08-16 2019-03-12 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供

Publications (2)

Publication Number Publication Date
JP2016534560A true JP2016534560A (ja) 2016-11-04
JP2016534560A5 JP2016534560A5 (cg-RX-API-DMAC7.html) 2017-09-21

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JP2016534851A Pending JP2016534560A (ja) 2013-08-16 2014-08-14 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供
JP2019044461A Active JP6783338B2 (ja) 2013-08-16 2019-03-12 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供

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Country Status (8)

Country Link
US (1) US11062906B2 (cg-RX-API-DMAC7.html)
EP (1) EP3033765A4 (cg-RX-API-DMAC7.html)
JP (2) JP2016534560A (cg-RX-API-DMAC7.html)
KR (1) KR102306410B1 (cg-RX-API-DMAC7.html)
CN (1) CN105637616A (cg-RX-API-DMAC7.html)
SG (2) SG11201601015RA (cg-RX-API-DMAC7.html)
TW (2) TWI636011B (cg-RX-API-DMAC7.html)
WO (1) WO2015023903A1 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022514242A (ja) * 2018-12-15 2022-02-10 インテグリス・インコーポレーテッド 非タングステン材料を有するフッ素イオン注入システムおよび使用方法
JP2023544172A (ja) * 2020-10-02 2023-10-20 インテグリス・インコーポレーテッド アルミニウムイオンを生成するために有用な方法およびシステム

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US9887067B2 (en) * 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
US9620376B2 (en) * 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
TWI707378B (zh) * 2016-04-08 2020-10-11 美商瓦里安半導體設備公司 將加工物質植入工件中與將摻雜劑植入工件中的方法及用於加工工件的設備
US20170294314A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current
US20170330725A1 (en) 2016-05-13 2017-11-16 Axcelis Technologies, Inc. Lanthanated tungsten ion source and beamline components
KR102202345B1 (ko) * 2016-05-13 2021-01-12 엔테그리스, 아이엔씨. 질소 이온 주입에서의 이온 소스 성능 개선을 위한 플루오르화된 조성물
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US10177026B2 (en) * 2016-11-29 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and fabrication method therefor
JP7416270B2 (ja) * 2020-08-26 2024-01-17 株式会社Sumco エピタキシャルシリコンウェーハ及びその製造方法、並びに半導体デバイスの製造方法

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