TWI623028B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

Info

Publication number
TWI623028B
TWI623028B TW106110282A TW106110282A TWI623028B TW I623028 B TWI623028 B TW I623028B TW 106110282 A TW106110282 A TW 106110282A TW 106110282 A TW106110282 A TW 106110282A TW I623028 B TWI623028 B TW I623028B
Authority
TW
Taiwan
Prior art keywords
film
gate electrode
dummy gate
insulating film
gate
Prior art date
Application number
TW106110282A
Other languages
English (en)
Chinese (zh)
Other versions
TW201724221A (zh
Inventor
佃榮次
片山弘造
園田賢一郎
國清辰也
Original Assignee
瑞薩電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子股份有限公司 filed Critical 瑞薩電子股份有限公司
Publication of TW201724221A publication Critical patent/TW201724221A/zh
Application granted granted Critical
Publication of TWI623028B publication Critical patent/TWI623028B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW106110282A 2013-01-25 2014-01-24 半導體裝置之製造方法 TWI623028B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP??2013-011820 2013-01-25
JP2013011820A JP6029989B2 (ja) 2013-01-25 2013-01-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201724221A TW201724221A (zh) 2017-07-01
TWI623028B true TWI623028B (zh) 2018-05-01

Family

ID=49989485

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106110282A TWI623028B (zh) 2013-01-25 2014-01-24 半導體裝置之製造方法
TW103102781A TWI591693B (zh) 2013-01-25 2014-01-24 半導體裝置之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103102781A TWI591693B (zh) 2013-01-25 2014-01-24 半導體裝置之製造方法

Country Status (6)

Country Link
US (3) US8956941B2 (enExample)
EP (1) EP2760048B1 (enExample)
JP (1) JP6029989B2 (enExample)
KR (1) KR20140095986A (enExample)
CN (2) CN103972177B (enExample)
TW (2) TWI623028B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4594973B2 (ja) * 2007-09-26 2010-12-08 株式会社東芝 不揮発性半導体記憶装置
JP6026914B2 (ja) 2013-02-12 2016-11-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9390927B2 (en) * 2013-08-16 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Contact formation for split gate flash memory
US8883624B1 (en) 2013-09-27 2014-11-11 Cypress Semiconductor Corporation Integration of a memory transistor into high-K, metal gate CMOS process flow
US9257445B2 (en) * 2014-05-30 2016-02-09 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell and a logic transistor
US9379222B2 (en) * 2014-05-30 2016-06-28 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell
JP2016039329A (ja) * 2014-08-08 2016-03-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6359386B2 (ja) * 2014-08-28 2018-07-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
WO2016118785A1 (en) * 2015-01-23 2016-07-28 Silicon Storage Technology, Inc. Method of forming self-aligned split-gate memory cell array with metal gates and logic devices
JP6440507B2 (ja) * 2015-01-27 2018-12-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN106158637B (zh) * 2015-03-31 2019-04-26 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
CN106158638B (zh) * 2015-04-01 2019-03-29 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
JP5956033B1 (ja) * 2015-07-23 2016-07-20 株式会社フローディア メモリセル、半導体集積回路装置、および半導体集積回路装置の製造方法
JP6556567B2 (ja) * 2015-09-09 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5982055B1 (ja) * 2015-12-18 2016-08-31 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
US10373967B2 (en) 2015-12-18 2019-08-06 Floadia Corporation Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
JP6069569B1 (ja) * 2016-08-24 2017-02-01 株式会社フローディア メモリセル、および不揮発性半導体記憶装置
JP6620046B2 (ja) * 2016-03-15 2019-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9934826B2 (en) * 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6750994B2 (ja) * 2016-09-29 2020-09-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10872898B2 (en) * 2017-07-19 2020-12-22 Cypress Semiconductor Corporation Embedded non-volatile memory device and fabrication method of the same
JP2019102560A (ja) * 2017-11-30 2019-06-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10672893B2 (en) 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making semiconductor device comprising flash memory and resulting device
JP2020035802A (ja) * 2018-08-27 2020-03-05 キオクシア株式会社 半導体記憶装置
CN111129020A (zh) * 2019-12-27 2020-05-08 华虹半导体(无锡)有限公司 闪存器件的制作方法
EP4177934B1 (en) 2021-07-27 2025-04-02 Changxin Memory Technologies, Inc. Semiconductor structure preparation method, semiconductor structure, and semiconductor memory
CN116131094B (zh) * 2021-11-12 2025-12-05 朗美通日本株式会社 光学半导体器件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090231921A1 (en) * 2008-03-14 2009-09-17 Renesas Technology Corp. Manufacturing method of nonvolatile semiconductor storage device and nonvolatile semiconductor storage device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983094B2 (ja) * 2002-04-25 2007-09-26 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
JP4721710B2 (ja) * 2003-03-19 2011-07-13 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2004303918A (ja) * 2003-03-31 2004-10-28 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2007234861A (ja) * 2006-03-01 2007-09-13 Renesas Technology Corp 半導体装置の製造方法
JP5191633B2 (ja) * 2006-04-04 2013-05-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8809179B2 (en) * 2006-04-13 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing topography of non-volatile memory and resulting memory cells
JP5142494B2 (ja) * 2006-08-03 2013-02-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5142501B2 (ja) * 2006-08-25 2013-02-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2009059927A (ja) * 2007-08-31 2009-03-19 Renesas Technology Corp 不揮発性半導体記憶装置の製造方法
JP2010183022A (ja) * 2009-02-09 2010-08-19 Renesas Electronics Corp 半導体装置およびその製造方法
JP2010245345A (ja) * 2009-04-07 2010-10-28 Renesas Electronics Corp 不揮発性半導体メモリ及びその製造方法
JP5417440B2 (ja) * 2009-05-28 2014-02-12 トヨタ自動車株式会社 半導体装置
JP2010282987A (ja) 2009-06-02 2010-12-16 Renesas Technology Corp 半導体装置およびその製造方法
US20110001179A1 (en) 2009-07-03 2011-01-06 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
JP5550286B2 (ja) * 2009-08-26 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5613506B2 (ja) * 2009-10-28 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5538838B2 (ja) * 2009-11-25 2014-07-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8552490B2 (en) * 2010-06-18 2013-10-08 United Microelectronics Corp. Nonvolatile memory device with a high-K charge storage layer having a U-shaped,cross-sectional structure
JP5734744B2 (ja) * 2011-05-27 2015-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8722493B2 (en) * 2012-04-09 2014-05-13 Freescale Semiconductor, Inc. Logic transistor and non-volatile memory cell integration

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090231921A1 (en) * 2008-03-14 2009-09-17 Renesas Technology Corp. Manufacturing method of nonvolatile semiconductor storage device and nonvolatile semiconductor storage device

Also Published As

Publication number Publication date
CN103972177B (zh) 2018-03-30
EP2760048B1 (en) 2017-09-06
EP2760048A3 (en) 2016-08-10
CN103972177A (zh) 2014-08-06
KR20140095986A (ko) 2014-08-04
EP2760048A2 (en) 2014-07-30
TWI591693B (zh) 2017-07-11
JP6029989B2 (ja) 2016-11-24
CN108461395A (zh) 2018-08-28
US9184264B2 (en) 2015-11-10
US20150111357A1 (en) 2015-04-23
TW201724221A (zh) 2017-07-01
TW201430921A (zh) 2014-08-01
CN108461395B (zh) 2022-08-23
JP2014143339A (ja) 2014-08-07
US20160093716A1 (en) 2016-03-31
US20140213030A1 (en) 2014-07-31
US8956941B2 (en) 2015-02-17

Similar Documents

Publication Publication Date Title
TWI623028B (zh) 半導體裝置之製造方法
US10263005B2 (en) Method of manufacturing a semiconductor device
JP5288877B2 (ja) 不揮発性半導体記憶装置
US8507340B2 (en) Method of fabricating a nonvolatile memory
US8811056B2 (en) Semiconductor device and method for manufacturing same
JP6026913B2 (ja) 半導体装置の製造方法
JP6778607B2 (ja) 半導体装置の製造方法
US10128259B1 (en) Method for manufacturing embedded memory using high-K-metal-gate (HKMG) technology
CN113206095B (zh) 存储器装置及其制造方法
CN105810721A (zh) 半导体衬底装置、半导体器件及半导体衬底的加工方法
CN105374755A (zh) 制造半导体器件的方法
US20190312043A1 (en) Method of manufacturing semiconductor device
TW201820590A (zh) 半導體裝置之製造方法
JP2013045837A (ja) 不揮発性半導体記憶装置およびその製造方法
US7893482B2 (en) Semiconductor devices having tunnel and gate insulating layers
US8278717B2 (en) Semiconductor memory device and method of manufacturing the same
CN113921531A (zh) 半导体装置及其制造方法
JP2013004791A (ja) 半導体装置およびその製造方法
US20090256264A1 (en) Semiconductor structure and method of making the same
US20140332816A1 (en) Semiconductor device
KR20080097899A (ko) 반도체 메모리 소자 및 이의 제조 방법
JP2010186817A (ja) 半導体装置及びその製造方法
JP2013026315A (ja) 半導体記憶装置及びその製造方法