TWI599015B - 半導體裝置及感測系統 - Google Patents

半導體裝置及感測系統 Download PDF

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Publication number
TWI599015B
TWI599015B TW102118830A TW102118830A TWI599015B TW I599015 B TWI599015 B TW I599015B TW 102118830 A TW102118830 A TW 102118830A TW 102118830 A TW102118830 A TW 102118830A TW I599015 B TWI599015 B TW I599015B
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TW
Taiwan
Prior art keywords
substrate
semiconductor device
signal
sensing
output
Prior art date
Application number
TW102118830A
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English (en)
Chinese (zh)
Other versions
TW201351607A (zh
Inventor
淺山豪
安普 夏馬
Original Assignee
新力股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201351607A publication Critical patent/TW201351607A/zh
Application granted granted Critical
Publication of TWI599015B publication Critical patent/TWI599015B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
TW102118830A 2012-06-04 2013-05-28 半導體裝置及感測系統 TWI599015B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261655237P 2012-06-04 2012-06-04

Publications (2)

Publication Number Publication Date
TW201351607A TW201351607A (zh) 2013-12-16
TWI599015B true TWI599015B (zh) 2017-09-11

Family

ID=48614093

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102118830A TWI599015B (zh) 2012-06-04 2013-05-28 半導體裝置及感測系統

Country Status (7)

Country Link
US (1) US9607971B2 (https=)
EP (1) EP2856750A2 (https=)
JP (1) JP2015521390A (https=)
KR (1) KR20150027061A (https=)
CN (1) CN104471925B (https=)
TW (1) TWI599015B (https=)
WO (1) WO2013183266A2 (https=)

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JP7278209B2 (ja) * 2017-04-25 2023-05-19 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置および撮像装置
KR102477352B1 (ko) * 2017-09-29 2022-12-15 삼성전자주식회사 반도체 패키지 및 이미지 센서
JP6708620B2 (ja) * 2017-12-15 2020-06-10 キヤノン株式会社 撮像素子及び撮像装置
JP7527755B2 (ja) * 2018-02-09 2024-08-05 キヤノン株式会社 光電変換装置および撮像システム
KR102598041B1 (ko) 2018-02-28 2023-11-07 삼성전자주식회사 이미지 센서 칩
KR102765858B1 (ko) * 2019-02-08 2025-02-12 삼성전자주식회사 이미지 센서 장치
KR102661820B1 (ko) 2019-02-11 2024-05-02 삼성전자주식회사 이미지 센서 및 그것의 구동 방법
US10672101B1 (en) * 2019-03-04 2020-06-02 Omnivision Technologies, Inc. DRAM with simultaneous read and write for multiwafer image sensors
TW202127637A (zh) * 2019-11-19 2021-07-16 日商索尼半導體解決方案公司 受光元件、測距模組
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JPWO2022064317A1 (https=) * 2020-09-25 2022-03-31
CN117397253A (zh) * 2021-05-24 2024-01-12 株式会社尼康 摄像元件以及摄像装置
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Also Published As

Publication number Publication date
TW201351607A (zh) 2013-12-16
US20130320197A1 (en) 2013-12-05
EP2856750A2 (en) 2015-04-08
JP2015521390A (ja) 2015-07-27
US9607971B2 (en) 2017-03-28
CN104471925A (zh) 2015-03-25
WO2013183266A2 (en) 2013-12-12
CN104471925B (zh) 2017-12-15
KR20150027061A (ko) 2015-03-11
WO2013183266A3 (en) 2014-02-27

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