JPWO2022064317A1 - - Google Patents
Info
- Publication number
- JPWO2022064317A1 JPWO2022064317A1 JP2022551445A JP2022551445A JPWO2022064317A1 JP WO2022064317 A1 JPWO2022064317 A1 JP WO2022064317A1 JP 2022551445 A JP2022551445 A JP 2022551445A JP 2022551445 A JP2022551445 A JP 2022551445A JP WO2022064317 A1 JPWO2022064317 A1 JP WO2022064317A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020160663 | 2020-09-25 | ||
| PCT/IB2021/058290 WO2022064317A1 (ja) | 2020-09-25 | 2021-09-13 | 撮像装置および電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022064317A1 true JPWO2022064317A1 (https=) | 2022-03-31 |
Family
ID=80846289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022551445A Pending JPWO2022064317A1 (https=) | 2020-09-25 | 2021-09-13 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12212873B2 (https=) |
| JP (1) | JPWO2022064317A1 (https=) |
| KR (1) | KR20230074476A (https=) |
| CN (1) | CN116075943A (https=) |
| WO (1) | WO2022064317A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7834102B2 (ja) * | 2021-06-17 | 2026-03-23 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006129762A1 (ja) * | 2005-06-02 | 2006-12-07 | Sony Corporation | 半導体イメージセンサ・モジュール及びその製造方法 |
| WO2014050694A1 (ja) * | 2012-09-28 | 2014-04-03 | ソニー株式会社 | 半導体装置および電子機器 |
| JP2016213298A (ja) * | 2015-05-07 | 2016-12-15 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
| JP2018037441A (ja) * | 2016-08-29 | 2018-03-08 | 富士通セミコンダクター株式会社 | ３次元積層チェーン型メモリ装置及びその製造方法 |
| JP2018117102A (ja) * | 2017-01-20 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
| WO2018186197A1 (ja) * | 2017-04-04 | 2018-10-11 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、及び電子機器 |
| WO2020129712A1 (ja) * | 2018-12-20 | 2020-06-25 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP2020123612A (ja) * | 2019-01-29 | 2020-08-13 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法、半導体装置の製造装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100610481B1 (ko) * | 2004-12-30 | 2006-08-08 | 매그나칩 반도체 유한회사 | 수광영역을 넓힌 이미지센서 및 그 제조 방법 |
| US8049293B2 (en) | 2005-03-07 | 2011-11-01 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
| CN101228631A (zh) | 2005-06-02 | 2008-07-23 | 索尼株式会社 | 半导体图像传感器模块及其制造方法 |
| CN104393007A (zh) | 2009-11-06 | 2015-03-04 | 株式会社半导体能源研究所 | 半导体装置 |
| JP5791571B2 (ja) * | 2011-08-02 | 2015-10-07 | キヤノン株式会社 | 撮像素子及び撮像装置 |
| US9607971B2 (en) * | 2012-06-04 | 2017-03-28 | Sony Corporation | Semiconductor device and sensing system |
| WO2014141663A1 (ja) * | 2013-03-14 | 2014-09-18 | 株式会社ニコン | 撮像ユニット、撮像装置および撮像制御プログラム |
| JP2015041677A (ja) * | 2013-08-21 | 2015-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| KR102450562B1 (ko) * | 2014-03-13 | 2022-10-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
| KR102380829B1 (ko) * | 2014-04-23 | 2022-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
| WO2016046685A1 (en) * | 2014-09-26 | 2016-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
| US9876946B2 (en) * | 2015-08-03 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| KR102653044B1 (ko) * | 2015-09-01 | 2024-04-01 | 소니그룹주식회사 | 적층체 |
| KR102661820B1 (ko) * | 2019-02-11 | 2024-05-02 | 삼성전자주식회사 | 이미지 센서 및 그것의 구동 방법 |
| US12376410B2 (en) * | 2019-07-04 | 2025-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device with embedded conductive layers |
| US11302736B2 (en) * | 2019-08-08 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
-
2021
- 2021-09-13 US US18/024,084 patent/US12212873B2/en active Active
- 2021-09-13 KR KR1020237008317A patent/KR20230074476A/ko active Pending
- 2021-09-13 WO PCT/IB2021/058290 patent/WO2022064317A1/ja not_active Ceased
- 2021-09-13 JP JP2022551445A patent/JPWO2022064317A1/ja active Pending
- 2021-09-13 CN CN202180061807.4A patent/CN116075943A/zh active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006129762A1 (ja) * | 2005-06-02 | 2006-12-07 | Sony Corporation | 半導体イメージセンサ・モジュール及びその製造方法 |
| WO2014050694A1 (ja) * | 2012-09-28 | 2014-04-03 | ソニー株式会社 | 半導体装置および電子機器 |
| JP2016213298A (ja) * | 2015-05-07 | 2016-12-15 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
| JP2018037441A (ja) * | 2016-08-29 | 2018-03-08 | 富士通セミコンダクター株式会社 | ３次元積層チェーン型メモリ装置及びその製造方法 |
| JP2018117102A (ja) * | 2017-01-20 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
| WO2018186197A1 (ja) * | 2017-04-04 | 2018-10-11 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、及び電子機器 |
| WO2020129712A1 (ja) * | 2018-12-20 | 2020-06-25 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP2020123612A (ja) * | 2019-01-29 | 2020-08-13 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法、半導体装置の製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116075943A (zh) | 2023-05-05 |
| KR20230074476A (ko) | 2023-05-30 |
| US20230396899A1 (en) | 2023-12-07 |
| US12212873B2 (en) | 2025-01-28 |
| TW202220227A (zh) | 2022-05-16 |
| WO2022064317A1 (ja) | 2022-03-31 |
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