CN116075943A - 摄像装置及电子设备 - Google Patents

摄像装置及电子设备 Download PDF

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Publication number
CN116075943A
CN116075943A CN202180061807.4A CN202180061807A CN116075943A CN 116075943 A CN116075943 A CN 116075943A CN 202180061807 A CN202180061807 A CN 202180061807A CN 116075943 A CN116075943 A CN 116075943A
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CN
China
Prior art keywords
layer
transistor
circuit
wiring
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180061807.4A
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English (en)
Chinese (zh)
Inventor
根来雄介
宍户英明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN116075943A publication Critical patent/CN116075943A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
CN202180061807.4A 2020-09-25 2021-09-13 摄像装置及电子设备 Pending CN116075943A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020160663 2020-09-25
JP2020-160663 2020-09-25
PCT/IB2021/058290 WO2022064317A1 (ja) 2020-09-25 2021-09-13 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
CN116075943A true CN116075943A (zh) 2023-05-05

Family

ID=80846289

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180061807.4A Pending CN116075943A (zh) 2020-09-25 2021-09-13 摄像装置及电子设备

Country Status (5)

Country Link
US (1) US12212873B2 (https=)
JP (1) JPWO2022064317A1 (https=)
KR (1) KR20230074476A (https=)
CN (1) CN116075943A (https=)
WO (1) WO2022064317A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7834102B2 (ja) * 2021-06-17 2026-03-23 株式会社半導体エネルギー研究所 撮像装置および電子機器

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* Cited by examiner, † Cited by third party
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KR100610481B1 (ko) * 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
US8049293B2 (en) 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
CN101228631A (zh) 2005-06-02 2008-07-23 索尼株式会社 半导体图像传感器模块及其制造方法
TW201101476A (en) 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
JP5791571B2 (ja) * 2011-08-02 2015-10-07 キヤノン株式会社 撮像素子及び撮像装置
US9607971B2 (en) * 2012-06-04 2017-03-28 Sony Corporation Semiconductor device and sensing system
TWI595637B (zh) 2012-09-28 2017-08-11 新力股份有限公司 半導體裝置及電子機器
WO2014141663A1 (ja) * 2013-03-14 2014-09-18 株式会社ニコン 撮像ユニット、撮像装置および撮像制御プログラム
JP2015041677A (ja) * 2013-08-21 2015-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102450562B1 (ko) * 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102380829B1 (ko) * 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
WO2016046685A1 (en) * 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6499006B2 (ja) * 2015-05-07 2019-04-10 株式会社半導体エネルギー研究所 撮像装置
US9876946B2 (en) * 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102653044B1 (ko) * 2015-09-01 2024-04-01 소니그룹주식회사 적층체
JP6758124B2 (ja) * 2016-08-29 2020-09-23 富士通セミコンダクターメモリソリューション株式会社 ３次元積層チェーン型メモリ装置の製造方法
JP2018117102A (ja) 2017-01-20 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 半導体装置
WO2018186197A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
US12119359B2 (en) * 2018-12-20 2024-10-15 Sony Semiconductor Solutions Corporation Imaging device
JP2020123612A (ja) 2019-01-29 2020-08-13 株式会社半導体エネルギー研究所 半導体装置の製造方法、半導体装置の製造装置
KR102661820B1 (ko) * 2019-02-11 2024-05-02 삼성전자주식회사 이미지 센서 및 그것의 구동 방법
US12376410B2 (en) * 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
US11302736B2 (en) * 2019-08-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device

Also Published As

Publication number Publication date
KR20230074476A (ko) 2023-05-30
US20230396899A1 (en) 2023-12-07
US12212873B2 (en) 2025-01-28
JPWO2022064317A1 (https=) 2022-03-31
TW202220227A (zh) 2022-05-16
WO2022064317A1 (ja) 2022-03-31

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