TWI563695B - Method for manufacturing optical semiconductor device - Google Patents

Method for manufacturing optical semiconductor device

Info

Publication number
TWI563695B
TWI563695B TW103100550A TW103100550A TWI563695B TW I563695 B TWI563695 B TW I563695B TW 103100550 A TW103100550 A TW 103100550A TW 103100550 A TW103100550 A TW 103100550A TW I563695 B TWI563695 B TW I563695B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
optical semiconductor
manufacturing optical
manufacturing
semiconductor
Prior art date
Application number
TW103100550A
Other languages
English (en)
Other versions
TW201427117A (zh
Inventor
Hiroshi Koizumi
Yasuhide Okada
Susumu Obata
Tomomichi Naka
Kazuhito Higuchi
Kazuo Shimokawa
Yoshiaki Sugizaki
Akihiro Kojima
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW201427117A publication Critical patent/TW201427117A/zh
Application granted granted Critical
Publication of TWI563695B publication Critical patent/TWI563695B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW103100550A 2010-06-07 2011-06-07 Method for manufacturing optical semiconductor device TWI563695B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010130526A JP4875185B2 (ja) 2010-06-07 2010-06-07 光半導体装置

Publications (2)

Publication Number Publication Date
TW201427117A TW201427117A (zh) 2014-07-01
TWI563695B true TWI563695B (en) 2016-12-21

Family

ID=45052948

Family Applications (4)

Application Number Title Priority Date Filing Date
TW103134786A TWI587547B (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法
TW103134787A TW201511368A (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法
TW103100550A TWI563695B (en) 2010-06-07 2011-06-07 Method for manufacturing optical semiconductor device
TW100119867A TWI462352B (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW103134786A TWI587547B (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法
TW103134787A TW201511368A (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW100119867A TWI462352B (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法

Country Status (5)

Country Link
US (2) US8754429B2 (zh)
JP (1) JP4875185B2 (zh)
KR (1) KR101191488B1 (zh)
CN (4) CN104617203A (zh)
TW (4) TWI587547B (zh)

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KR102135625B1 (ko) * 2013-11-29 2020-07-21 서울반도체 주식회사 발광 소자, 이를 포함하는 차량용 램프 및 백라이트 유닛
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KR102185099B1 (ko) * 2013-05-20 2020-12-02 루미리즈 홀딩 비.브이. 돔을 가진 칩 규모 발광 디바이스 패키지
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