JP5832956B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP5832956B2 JP5832956B2 JP2012120178A JP2012120178A JP5832956B2 JP 5832956 B2 JP5832956 B2 JP 5832956B2 JP 2012120178 A JP2012120178 A JP 2012120178A JP 2012120178 A JP2012120178 A JP 2012120178A JP 5832956 B2 JP5832956 B2 JP 5832956B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- electrode
- side wiring
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 237
- 229910052751 metal Inorganic materials 0.000 claims description 123
- 239000002184 metal Substances 0.000 claims description 123
- 229920005989 resin Polymers 0.000 claims description 91
- 239000011347 resin Substances 0.000 claims description 91
- 239000002245 particle Substances 0.000 claims description 50
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 29
- 238000000034 method Methods 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910002367 SrTiO Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical group 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
図1は、第1実施形態の半導体発光装置1の模式断面図である。
図14は、第2実施形態の半導体発光装置2の模式断面図である。
図15は、第3実施形態の半導体発光装置3の模式断面図である。
図16は、第4実施形態の半導体発光装置4の模式断面図である。
Claims (6)
- 発光層と、第1の面と、前記第1の面の反対側に設けられ、前記発光層を含む領域と、前記発光層を含まない領域とを有する第2の面とを有する半導体層と、
前記第2の面における前記発光層を含む領域に設けられたp側電極と、
前記第2の面における前記発光層を含まない領域に設けられたn側電極と、
前記p側電極上に設けられ、前記p側電極と電気的に接続されたp側配線部と、
前記n側電極上および前記p側電極上に設けられ、前記n側電極と電気的に接続されたn側配線部と、
前記p側電極と前記n側配線部との間で前記p側電極及び前記n側配線部に接して設けられたバリスタ膜と、
前記第2の面上と、前記第1の面から続く前記半導体層の側面と、前記発光層の端面と、を覆い、前記バリスタ膜よりも高耐圧である絶縁膜と、
を備えた半導体発光装置。 - 前記p側配線部は、
前記p側電極上に設けられたp側配線層と、
前記p側配線層上に設けられ、前記p側配線層よりも厚いp側金属ピラーと、
を有し、
前記n側配線部は、
前記n側電極上およびバリスタ膜上に設けられたn側配線層と、
前記n側配線層上に設けられ、前記n側配線層よりも厚いn側金属ピラーと、
を有する請求項1記載の半導体発光装置。 - 発光層と、第1の面と、前記第1の面の反対側に設けられ、前記発光層を含む領域と、前記発光層を含まない領域とを有する第2の面とを有する半導体層と、
前記第2の面における前記発光層を含む領域に設けられたp側電極と、
前記第2の面における前記発光層を含まない領域に設けられたn側電極と、
前記p側電極上に設けられ、前記p側電極と電気的に接続されたp側配線部と、
前記n側電極上に設けられ、前記n側電極と電気的に接続されたn側配線部と、
前記p側配線部と前記n側配線部との間および前記半導体層の側面に設けられた樹脂層であって、バリスタ粒子と導電性粒子とを含む樹脂層と、
前記第2の面上と、前記第1の面から続く前記半導体層の前記側面と、前記発光層の端面と、を覆い、前記半導体層の前記側面と、前記樹脂層と、の間に設けられ、前記樹脂層よりも高耐圧である絶縁膜と、
を備えた半導体発光装置。 - 前記導電性粒子は、金粒子である請求項3記載の半導体発光装置。
- 前記絶縁膜は、前記p側電極上に設けられ、
前記n側配線部の一部は、前記絶縁膜上に広がっている請求項3または4に記載の半導体発光装置。 - 前記p側配線部は、
前記p側電極上に設けられたp側配線層と、
前記p側配線層上に設けられ、前記p側配線層よりも厚いp側金属ピラーと、
を有し、
前記n側配線部は、
前記n側電極上および前記絶縁膜上に設けられたn側配線層と、
前記n側配線層上に設けられ、前記n側配線層よりも厚いn側金属ピラーと、
を有する請求項5記載の半導体発光装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012120178A JP5832956B2 (ja) | 2012-05-25 | 2012-05-25 | 半導体発光装置 |
TW102102896A TWI525854B (zh) | 2012-05-25 | 2013-01-25 | 半導體發光裝置 |
EP13156742.2A EP2667424B1 (en) | 2012-05-25 | 2013-02-26 | Semiconductor light emitting device |
US13/781,683 US9136439B2 (en) | 2012-05-25 | 2013-02-28 | Semiconductor light emitting device |
US14/822,277 US9496471B2 (en) | 2012-05-25 | 2015-08-10 | Semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012120178A JP5832956B2 (ja) | 2012-05-25 | 2012-05-25 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013247247A JP2013247247A (ja) | 2013-12-09 |
JP5832956B2 true JP5832956B2 (ja) | 2015-12-16 |
Family
ID=47884136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012120178A Active JP5832956B2 (ja) | 2012-05-25 | 2012-05-25 | 半導体発光装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9136439B2 (ja) |
EP (1) | EP2667424B1 (ja) |
JP (1) | JP5832956B2 (ja) |
TW (1) | TWI525854B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103247743B (zh) * | 2013-05-24 | 2016-04-20 | 安徽三安光电有限公司 | 贴面式发光器件及其制作方法 |
JP6355492B2 (ja) | 2013-10-03 | 2018-07-11 | アルパッド株式会社 | 複合樹脂及び電子デバイス |
TWI552382B (zh) * | 2014-01-24 | 2016-10-01 | 隆達電子股份有限公司 | 發光二極體裝置及其製造方法 |
JP6185415B2 (ja) | 2014-03-27 | 2017-08-23 | 株式会社東芝 | 半導体発光装置 |
JP6398381B2 (ja) * | 2014-06-30 | 2018-10-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
DE102014116999A1 (de) * | 2014-11-20 | 2016-05-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
JP2016134605A (ja) * | 2015-01-22 | 2016-07-25 | 株式会社東芝 | 複合樹脂及び電子デバイス |
JP6604786B2 (ja) * | 2015-09-11 | 2019-11-13 | 三星電子株式会社 | 半導体発光装置およびその製造方法 |
TWI635605B (zh) * | 2017-11-02 | 2018-09-11 | 錼創顯示科技股份有限公司 | 微型發光二極體顯示面板 |
TWI660524B (zh) * | 2018-07-17 | 2019-05-21 | 友達光電股份有限公司 | 發光裝置及其製造方法 |
CN109065527A (zh) * | 2018-07-31 | 2018-12-21 | 江门黑氪光电科技有限公司 | 一种无电阻led灯串 |
CN108709170A (zh) * | 2018-07-31 | 2018-10-26 | 江门黑氪光电科技有限公司 | 一种自带电阻的led支架 |
CN108735886A (zh) * | 2018-07-31 | 2018-11-02 | 江门黑氪光电科技有限公司 | 一种自带电阻的led |
CN109904174B (zh) * | 2019-02-28 | 2021-01-08 | 京东方科技集团股份有限公司 | 一种显示面板的电路背板及其制备方法和显示面板 |
CN110970537A (zh) * | 2019-12-19 | 2020-04-07 | 京东方科技集团股份有限公司 | Led、驱动电路基板、显示面板及制作方法、显示装置 |
CN116646449B (zh) * | 2023-06-02 | 2024-02-13 | 淮安澳洋顺昌光电技术有限公司 | 一种led封装结构 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001015815A (ja) | 1999-04-28 | 2001-01-19 | Sanken Electric Co Ltd | 半導体発光装置 |
JP3891838B2 (ja) | 2001-12-26 | 2007-03-14 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
DE10392524B4 (de) | 2002-04-08 | 2008-08-07 | OTC Littelfuse, Inc., Des Plaines | Vorrichtungen mit spannungsvariablem Material zur direkten Anwendung |
US7183891B2 (en) | 2002-04-08 | 2007-02-27 | Littelfuse, Inc. | Direct application voltage variable material, devices employing same and methods of manufacturing such devices |
US7132922B2 (en) | 2002-04-08 | 2006-11-07 | Littelfuse, Inc. | Direct application voltage variable material, components thereof and devices employing same |
JP4299580B2 (ja) * | 2003-05-16 | 2009-07-22 | 住友化学株式会社 | 発光素子および発光装置 |
JP4273928B2 (ja) * | 2003-10-30 | 2009-06-03 | 豊田合成株式会社 | Iii−v族窒化物半導体素子 |
JP4590905B2 (ja) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
US7279724B2 (en) | 2004-02-25 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
KR100665116B1 (ko) | 2005-01-27 | 2007-01-09 | 삼성전기주식회사 | Esd 보호용 led를 구비한 질화갈륨계 발광 소자 및그 제조 방법 |
JP4697397B2 (ja) | 2005-02-16 | 2011-06-08 | サンケン電気株式会社 | 複合半導体装置 |
JP4915058B2 (ja) | 2005-06-06 | 2012-04-11 | パナソニック株式会社 | Led部品およびその製造方法 |
KR100665219B1 (ko) | 2005-07-14 | 2007-01-09 | 삼성전기주식회사 | 파장변환형 발광다이오드 패키지 |
US7671468B2 (en) * | 2005-09-30 | 2010-03-02 | Tdk Corporation | Light emitting apparatus |
JP4146464B2 (ja) * | 2005-10-11 | 2008-09-10 | Tdk株式会社 | 発光装置 |
WO2007058438A1 (en) * | 2005-11-18 | 2007-05-24 | Amosense Co., Ltd. | Electronic parts packages |
JP4353232B2 (ja) | 2006-10-24 | 2009-10-28 | ソニー株式会社 | 発光素子 |
JP2008218592A (ja) | 2007-03-02 | 2008-09-18 | Murata Mfg Co Ltd | 薄膜バリスタおよびその製造方法 |
JP5188861B2 (ja) | 2008-04-04 | 2013-04-24 | パナソニック株式会社 | 静電気対策部品およびこの静電気対策部品を備えた発光ダイオードモジュール |
US20100065785A1 (en) * | 2008-09-17 | 2010-03-18 | Lex Kosowsky | Voltage switchable dielectric material containing boron compound |
JP2011023557A (ja) * | 2009-07-16 | 2011-02-03 | Toshiba Corp | 発光装置 |
JP2011114161A (ja) | 2009-11-26 | 2011-06-09 | Renesas Electronics Corp | 半導体装置、半導体装置の製造方法および半導体装置の判別方法 |
JP2011124333A (ja) | 2009-12-09 | 2011-06-23 | Tdk Corp | Led実装用基板 |
WO2011108227A1 (ja) * | 2010-03-01 | 2011-09-09 | パナソニック株式会社 | 発光素子用基板及びその製造方法ならびに発光装置 |
JP5101650B2 (ja) * | 2010-03-25 | 2012-12-19 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
US8296940B2 (en) | 2010-04-19 | 2012-10-30 | General Electric Company | Method of forming a micro pin hybrid interconnect array |
JP2011233650A (ja) * | 2010-04-26 | 2011-11-17 | Toshiba Corp | 半導体発光装置 |
JP5281612B2 (ja) * | 2010-05-26 | 2013-09-04 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5606161B2 (ja) | 2010-06-02 | 2014-10-15 | キヤノン株式会社 | 画像形成装置 |
TW201145614A (en) * | 2010-06-03 | 2011-12-16 | Toshiba Kk | Method for manufacturing light-emitting device and light-emitting device manufactured by the same |
US20110298001A1 (en) * | 2010-06-03 | 2011-12-08 | Kabushiki Kaisha Toshiba | Method for manufacturing light-emitting device and light-emitting device manufactured by the same |
JP5398644B2 (ja) * | 2010-06-07 | 2014-01-29 | 株式会社東芝 | 半導体発光装置を用いた光源装置 |
JP4875185B2 (ja) * | 2010-06-07 | 2012-02-15 | 株式会社東芝 | 光半導体装置 |
JP5759790B2 (ja) * | 2010-06-07 | 2015-08-05 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP5426484B2 (ja) * | 2010-06-07 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP2012023328A (ja) * | 2010-06-18 | 2012-02-02 | Citizen Holdings Co Ltd | 半導体発光素子及びその製造方法 |
JP2012015187A (ja) * | 2010-06-29 | 2012-01-19 | Citizen Holdings Co Ltd | 半導体発光素子及びその製造方法 |
JP5462217B2 (ja) | 2011-05-20 | 2014-04-02 | 株式会社東芝 | 発光装置の製造方法 |
-
2012
- 2012-05-25 JP JP2012120178A patent/JP5832956B2/ja active Active
-
2013
- 2013-01-25 TW TW102102896A patent/TWI525854B/zh active
- 2013-02-26 EP EP13156742.2A patent/EP2667424B1/en active Active
- 2013-02-28 US US13/781,683 patent/US9136439B2/en active Active
-
2015
- 2015-08-10 US US14/822,277 patent/US9496471B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9496471B2 (en) | 2016-11-15 |
US20150364664A1 (en) | 2015-12-17 |
EP2667424B1 (en) | 2018-10-17 |
US20130313590A1 (en) | 2013-11-28 |
EP2667424A1 (en) | 2013-11-27 |
TW201349572A (zh) | 2013-12-01 |
JP2013247247A (ja) | 2013-12-09 |
US9136439B2 (en) | 2015-09-15 |
TWI525854B (zh) | 2016-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5832956B2 (ja) | 半導体発光装置 | |
JP5603813B2 (ja) | 半導体発光装置及び発光装置 | |
JP5869961B2 (ja) | 半導体発光装置 | |
JP5642623B2 (ja) | 半導体発光装置 | |
JP5603793B2 (ja) | 半導体発光装置 | |
JP5816127B2 (ja) | 半導体発光装置およびその製造方法 | |
JP5989420B2 (ja) | 半導体発光装置 | |
US8994030B2 (en) | Semiconductor light emitting device | |
JP2013232477A (ja) | 発光モジュール | |
JP2013232478A (ja) | 半導体発光装置及びその製造方法 | |
JP2012169332A (ja) | 半導体発光装置及びその製造方法 | |
JP5837456B2 (ja) | 半導体発光装置及び発光モジュール | |
US8669698B2 (en) | Wavelength converter and semiconductor light emitting device | |
JP2015216408A (ja) | 半導体発光装置 | |
JP2015216401A (ja) | 半導体発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140826 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150529 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150731 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150929 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151028 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5832956 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |