CN109065527A - 一种无电阻led灯串 - Google Patents

一种无电阻led灯串 Download PDF

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Publication number
CN109065527A
CN109065527A CN201810856460.2A CN201810856460A CN109065527A CN 109065527 A CN109065527 A CN 109065527A CN 201810856460 A CN201810856460 A CN 201810856460A CN 109065527 A CN109065527 A CN 109065527A
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Prior art keywords
chip
lamp base
led
erecting bed
led light
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赖思强
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Jiangmen Black Krypton Photoelectric Technology Co Ltd
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Jiangmen Black Krypton Photoelectric Technology Co Ltd
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Priority to CN201810856460.2A priority Critical patent/CN109065527A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一种无电阻LED灯串,包括电路板,焊接在电路板上的LED,包覆所述电路板和LED的外皮,所述LED包括相互隔离的第一灯脚和第二灯脚,与第一灯脚一体的芯片安装台,焊接在芯片安装台上的芯片,封装所述芯片和部分支架的封装胶体,所述第一灯脚、第二灯脚和芯片安装台至少表面采用具有预定阻值的材料制造。由于本发明的LED的第一灯脚、第二灯脚和芯片安装台至少表面采用具有预定阻值的材料制造,使得LED本身自带电阻,制造灯串时就不需要再串联电阻,大大降低LED灯带的成本和制造工艺的复杂性。

Description

一种无电阻LED灯串
技术领域
本发明涉及一种LED灯具,尤其涉及一种无电阻LED灯串。
背景技术
由于LED是伏安特性为非线性的电子元件,LED加载到额定电压后,电流(或LED的电阻)会随电压或温度的微变而巨变,存在烧毁LEDPN结的风险。为化解上述风险,现有LED供电一般采用恒流源精确稳定控制电流,但这种控制方法成本较高,不适合应用于LED灯串等追求低成本的产品上。现有LED灯串一般采用串联电阻的方式防止电流巨变烧毁LED,但该方法需要在灯串中额外焊接电阻,增加了成本和制造工艺的复杂性。
发明内容
为了克服现有技术的不足,本发明提供一种结构简单,工艺简便的一种无电阻LED灯串。
本发明解决其技术问题所采用的技术手段是:一种无电阻LED灯串,包括电路板,焊接在电路板上的LED,包覆所述电路板和LED的外皮,所述LED包括相互隔离的第一灯脚和第二灯脚,与第一灯脚一体的芯片安装台,焊接在芯片安装台上的芯片,封装所述芯片和部分支架的封装胶体,所述第一灯脚、第二灯脚和芯片安装台至少表面采用具有预定阻值的材料制造。
本发明的有益效果是:由于本发明的LED的第一灯脚、第二灯脚和芯片安装台至少表面采用具有预定阻值的材料制造,使得LED本身自带电阻,制造灯串时就不需要再串联电阻,大大降低LED灯带的成本和制造工艺的复杂性。
附图说明
图1为本发明一种无电阻LED灯带的结构示意图
图2为贴片式LED的结构示意图;
图3为直插式LED的结构示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细的说明。
参考图1,一种无电阻LED灯串,包括电路板D,焊接在电路板D上的LED20,包覆所述电路板D和LED20的外皮P,所述LED20的结构包括以下详述的贴片式LED或直插式LED两种形式。
参照图2,一种贴片式LED,包括支架1和焊接在支架1上的芯片2,封装所述芯片2和部分支架的封装胶体4。所述支架1包括相互隔离的第一灯脚11和第二灯脚12,与第一灯脚11一体的芯片安装台13,包裹所述芯片安装台13和部分第一焊脚11、第二焊脚12绝缘固定件3。固定件3上方设置有纵截面为倒梯形的杯碗31,所述芯片安装台13置于杯碗31内。为便于安装芯片2,所述芯片安装台13上设置有凹部131,所述芯片2固定在所述凹部131内,芯片2通过焊线5分别与所述第一焊脚11、第二焊脚12电连接。杯碗31内封装有环氧树脂和荧光粉混合物组成的封装胶体4。
本发明的制造方法之一是,首先将所述第一焊脚11、第二焊脚12和芯片安装台13采用导热塑料或导热陶瓷等导热绝缘体制作,再在所述第一焊脚11、第二焊脚12和焊芯片安装台13的表面采用高温真空镀膜技术镀上镍铬合金或碳膜等具有预定阻值的涂层,所述阻值可以通过控制镀膜厚度或在涂层表面刻线的方式调节。应用于LED灯串的单个LED支架的阻值最好控制在50至100欧姆,最佳阻值是68欧姆。
本发明的制造方式之二是,直接采用具有预定阻值的导电材料制造,该材料可以是镍铬合金或碳膜,或者在铜或铝等普通导体材料中掺杂非导电材料,阻值通过控制非导电材料的比例来调节,阻值范围与方式之一相同。
参考图3,一种直插式LED,包括支架1,焊接在支架1上的芯片2和包裹芯片2和部分支架1的封装胶体4。所述支架1包括相互电隔离的第一灯脚11和第二灯脚12,与第一灯脚11一体的芯片安装台13。为便于安装芯片2,所述芯片安装台13上设置有凹部131,所述芯片2固定在所述凹部131内,芯片2通过焊线5分别与第一焊脚11和第二焊脚12电连接。所述封装胶体4包裹芯片安装台13和邻近安装台13的部分第一灯脚11和第二灯脚12。所述支架的制造方式与上实施例一种贴片式LED相同。
本发明采用简单的方法,使得LED本身自带电阻,使用该LED来制造灯串时就不需要再串联电阻,大大降低LED灯带的成本和制造工艺的复杂性。

Claims (5)

1.一种无电阻LED灯串,包括电路板,焊接在电路板上的LED,包覆所述电路板和LED的外皮,所述LED包括相互隔离的第一灯脚和第二灯脚,与第一灯脚一体的芯片安装台,焊接在芯片安装台上的芯片,封装所述芯片和部分支架的封装胶体,其特征在于:所述第一灯脚、第二灯脚和芯片安装台由导热绝缘体制作,所述焊盘和焊脚表面涂覆有具有预定阻值涂层。
2.根据权利要求1所述的一种无电阻LED灯串,其特征在于:所述第一灯脚、第二灯脚和芯片安装台由导热塑料或导热陶瓷制作,所述具有预定阻值涂层为镍铬合金膜或碳膜。
3.根据权利要求1所述的一种无电阻LED灯串,其特征在于:所述具有预定阻值的材料为镍铬合金或碳膜。
4.根据权利要求1所述的一种无电阻LED灯串,其特征在于:所述具有预定阻值的材料为导电金属掺杂绝缘体组成。
5.根据权利要求1所述的一种无电阻LED灯串,其特征在于:还包括包裹所述芯片安装台和部分第一焊脚、第二焊脚的绝缘固定件,固定件上方设置有纵截面为倒梯形的杯碗,所述芯片安装台置于杯碗内。
CN201810856460.2A 2018-07-31 2018-07-31 一种无电阻led灯串 Pending CN109065527A (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201059506Y (zh) * 2007-07-24 2008-05-14 深圳莱特光电有限公司 带限流电阻的led灯
CN101436634A (zh) * 2007-11-16 2009-05-20 欧姆龙株式会社 光半导体封装及其制造方法、具有该封装的光电传感器
US20130313590A1 (en) * 2012-05-25 2013-11-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN104380486A (zh) * 2012-06-15 2015-02-25 夏普株式会社 发光装置
CN207504012U (zh) * 2017-09-26 2018-06-15 江西鸿利光电有限公司 一种高稳定性led灯丝
CN208835059U (zh) * 2018-07-31 2019-05-07 江门黑氪光电科技有限公司 一种无电阻led灯串

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201059506Y (zh) * 2007-07-24 2008-05-14 深圳莱特光电有限公司 带限流电阻的led灯
CN101436634A (zh) * 2007-11-16 2009-05-20 欧姆龙株式会社 光半导体封装及其制造方法、具有该封装的光电传感器
US20130313590A1 (en) * 2012-05-25 2013-11-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device
CN104380486A (zh) * 2012-06-15 2015-02-25 夏普株式会社 发光装置
US20150137161A1 (en) * 2012-06-15 2015-05-21 Sharp Kabushiki Kaisha Light-emitting device
CN207504012U (zh) * 2017-09-26 2018-06-15 江西鸿利光电有限公司 一种高稳定性led灯丝
CN208835059U (zh) * 2018-07-31 2019-05-07 江门黑氪光电科技有限公司 一种无电阻led灯串

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