CN105609496A - 高功率密度cob封装白光led模块及其封装方法 - Google Patents
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 241000218202 Coptis Species 0.000 claims abstract description 12
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 238000005538 encapsulation Methods 0.000 claims description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 8
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000003292 glue Substances 0.000 abstract description 11
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000004134 energy conservation Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 230000008901 benefit Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000009766 low-temperature sintering Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
本发明涉及一种高功率密度COB封装白光LED模块及制备方法,在陶瓷基板上设置线路层以及用于使封装胶水固定在基板上的围坝栏,线路层上设置用于封装LED芯片的封装单元矩阵;矩阵排列着LED芯片;LED芯片通过纳米银焊膏与基板粘贴;芯片上键合的金线与电源的输入电极和输出电极连接。本发明采用单颗大功率密度的LED芯片及多芯片集成的LED封装方法,光输出高,体积小,散热好,该大功率COB模块搭配使用外壳、基座、精工散热器、高端反光罩、导热板、支架等配件,提供一种25W大功率COB光源,光电转化率高,寿命高,节能环保。
Description
技术领域
本发明涉及一种高功率密度COB封装白光LED模块及制备方法,提供一种25W大功率白光COB模块,光输出高,体积小,采用了高导热导电性的纳米银焊膏与之相配合烧结LED模块,以大大增强模块的散热性,降低结温,从而提高其发光效率并大大提高寿命,节能环保。
背景技术
发光二极管(LED)作为一种新型、有较大潜力的固态照明方式,具有绿色、环保、响应时间短、寿命长、耗电量少、发光效率高、稳定性好等优点。大功率LED固态照明是继白炽灯发明以来,最重要的照明革命。随着单颗大功率LED的功率密度的不断提高,以及多芯片集成阵列块方法的使用,使LED的光输出能力逐年增强,同时LED的功率和正向电流也逐渐增大,解决其散热问题也越来越关键。如果不及时将芯片发出的热量导出并消散,大量的热量将积聚在LED内部,将造成芯片的温升效应,LED的发光效率将急剧下降,而且寿命和可靠性也将大打折扣;另外高温高热将使LED封装结构内部产生机械应力,还可能引发质量问题。因此,为了满足大功率LED的导电与散热需求,我们需要采用适合的芯片粘接材料以保证其可靠性。如今常用的粘接材料有锡基焊料,导电银胶和纳米银焊膏等。相比于锡银铜焊料和导电银胶,纳米银焊膏的熔点较高,导热导电性能较好,无铅环保,可靠性高,可低温烧结,散热性好。与传统大功率发光二极管(LED)封装技术相比,板上芯片直装式(COB)封装作为一种将裸芯片直接粘贴在印刷电路板上,然后进行引线键合,再用有机胶将芯片和引线包装保护芯片的直接贴装技术,通过基板直接散热,不仅能减少支架的制造工艺及其成本,还具有减少热阻的散热优势。
本实验所用芯片已涂敷荧光粉,蓝光LED芯片发出的蓝光透过涂覆在其周围的黄色荧光粉,荧光粉被一部分蓝光激发后发出黄光,蓝光光谱与黄光光谱互相重叠后形成白光,能在封装点亮之后发出白光。Al2O3陶瓷基板具有高散热、低热阻、寿命长、耐电压等优点。灌封硅胶SiliconeOT-6550AB透光率高、折射率高、热稳定性好、应力低、吸湿性,且能保护键合完的金线电路。因此我们采用纳米银低温烧结封装COB大功率LED模块来实现高功率密度LED的小面积封装。
发明内容
本发明的目的在于使用新的芯片连接材料纳米银焊膏封装多芯片集成大功率LED,并提供一种高功率密度LED多芯片集成COB封装方法,以这种方法制得的大功率白光二极管模块,使用低温烧结技术,在230℃下实现芯片连接,散热效果好,保障了25W大功率COB模块的使用寿命,光电转化率高,寿命高,节能环保。
为实现上述目的,本发明采用如下的技术方案:
本发明的高功率密度COB封装白光LED模块;在陶瓷基板上设置线路层以及用于使封装胶水固定在基板上的围坝栏,线路层上设置用于封装LED芯片的封装单元矩阵;矩阵排列着LED芯片;LED芯片通过纳米银焊膏与基板粘贴;芯片上键合的金线与电源的输入电极和输出电极连接。
本发明的高功率密度COB封装白光LED模块的制备方法,其步骤如下:
(1)将纳米银焊膏用点胶机点在基板上;
(2)用贴片机将LED芯片贴合在点胶处,LED芯片呈矩阵排列形成COB的光源部分;
(3)把贴片结束的模块放在加热台上进行烧结;
(4)用超声波金丝球焊机将LED芯片串联并将LED芯片与焊盘连接形成电路;
(5)将硅胶真空脱泡后填充到围坝栏内,经过烘烤封装胶水完全固化。
本发明采用单颗大功率密度的LED芯片及多芯片集成的LED封装方法,光输出高,体积小,散热好,该大功率COB模块搭配使用外壳、基座、精工散热器、高端反光罩、导热板、支架等配件,提供一种25W大功率COB光源,光电转化率高,寿命高,节能环保。
COB封装作为一种将裸芯片直接粘贴在印刷电路板上,然后进行引线键合,再用有机胶将芯片和引线包装保护芯片的直接贴装技术,通过基板直接散热,不仅能减少支架的制造工艺及其成本,还具有减少热阻的散热优势。
粘结材料纳米银焊膏,无铅环保、导电耐高温、可靠性高、可低温烧结,散热性好,降低结温,有效解决了高功率密度封装中关键的散热问题,对于提高高功率密度COB封装LED模块的性能及可靠性起到了关键作用。
Al2O3陶瓷基板具有高绝缘性能、与元器件相近的线膨胀系数、高的化学稳定性等诸多优点;所述围坝栏包括用于将基板划分为多个区域的围栏。
本发明的25W大功率COB光源,COB模块功率大体积小,且散热性非常好,使COB光源安装体积小,采用加厚实心铝材散热器,快速导热散热面积大,保障光源寿命。
本发明的优点:
(1)本发明使用OSRAM提供的1w大功率白光LED芯片,芯片上结合荧光粉,蓝光LED芯片发出的蓝光透过涂覆在其周围的黄色荧光粉,荧光粉被一部分蓝光激发后发出黄光,蓝光光谱与黄光光谱互相重叠后形成白光,能在封装点亮之后发出白光。
(2)本发明利用点胶、贴片方式实现大功率白光LED模块的封装,节省焊膏,降低成本,提高封装工作效率。
(3)芯片粘结材料纳米银焊膏无铅环保、导电耐高温、可靠性高、可低温烧结,散热性好,降低结温,有效解决了高功率密度封装中关键的散热问题,对于提高高功率密度COB封装LED模块的性能及可靠性起到了关键作用。
(4)氧化铝陶瓷基板室温下的热导率为29W/(m·K),与钢铁的热导率接近,且具有高绝缘性能、与元器件相近的线膨胀系数、高的化学稳定性等诸多优点。采用高导热导电性的纳米银焊膏与之相配合烧结封装COB封装LED模块,通过基板直接散热,不仅能减少支架的制造工艺及其成本,还具有减少热阻的散热优势,有效提高了封装功率密度,而且降低了封装热阻。
(5)灌封硅胶固化后有弹性质软,具有防震功能,能很好的保护金线键合的电路;另外硅胶的导热系数高,能更快的散发热量。灌封硅胶后的25W大功率COB模块,功率大体积小,且散热性非常好,保障了COB光源安装体积小,搭配使用外壳、基座、精工散热器、高端反光罩,导热板、支架等配件,提供一种25W大功率COB光源,光电转化率高,寿命高,节能环保,可以应用于室内、商业照明领域。
附图说明
图1:Al2O3(5×5)-COB陶瓷基板。
图2:点胶结束的纳米银焊膏。
图3:贴片结束图。
图4:纳米银焊膏的烧结曲线。
图5:打金线结束图。
图6:金线键合形成的电路。
图7:AB胶OT-6550固化曲线。
具体实施方式
下面结合附图对本发明做进一步的详细说明:
一种纳米银焊膏封装的多芯片集成大功率LED模块,它包括(图5)Al2O3陶瓷基板1,纳米银焊膏2,LED芯片3,发光二极管芯片上键合的金线4与电源的输入电极和输出电极连接,发光二极管芯片及键合金线阵列在基板中央围坝栏5内,本发明方法通过以下技术方案实现。
以纳米银焊膏为中间层,利用点胶、贴片、烧结、金线连接、灌封硅胶五个步骤实现COB大功率白光LED模块的封装:
(1)将纳米银焊膏2用点胶机点在Al2O3陶瓷基板1上,通过控制点胶机的压力和时间控制点胶量。
(2)用贴片机将LED芯片3密集贴合在点胶处,LED芯片呈矩阵排列形成COB的光源部分。
(3)把贴片结束的模块放在加热台上进行低温烧结。
(4)用超声波金丝球焊机将LED芯片串联并将LED芯片与焊盘连接形成电路。
(5)将硅胶真空脱泡后填充到围坝栏内,经过高温烘烤封装胶水完全固化。
以制得的5×525W大功率白光发光二极管模块为例进行详细说明:用YD2800型点胶机将纳米银焊膏注射于Al2O3(5×5)-COB陶瓷基板上,基板尺寸为:24.5*21*t0.5mm。如图1所示,为Al2O3(5×5)-COB陶瓷基板。通过控制压力7.0kg/cm,时间0.5s,控制基板中央25个矩形的点胶量。如图2所示,为点胶结束的纳米银焊膏。选用欧朗公司GaN基1W白光LED芯片,芯片尺寸为:1mm*1mm。用贴片机实现25片LED芯片与25个矩形区域的连接,保证贴片时焊膏少量均匀溢出,平铺在芯片下方,使芯片与基板完好接触。如图3所示,为贴片结束图。之后将模块置于加热台上烧结,具体烧结工艺为:以300℃/h的速率升温,达到255℃之后,保温15min,然后自然冷却至室温。如图4所示,为纳米银焊膏的烧结曲线。然后用WT-2330超声波金丝球焊机将25颗LED芯片串联,并将LED芯片与焊盘连接形成电路。如图5所示,金线键合形成的电路。如图6所示,为打金线结束图。将硅胶真空脱泡后填充到围坝栏内,经过高温烘烤封装胶水完全固化。如图7所示,为AB胶OT-6550固化曲线。即完成该25W白光LED模块的封装。经光电测试系统测试,在额定电流350mA下,电压为71.5V,经计算,其功率为25W。
本发明公开和提出的高功率密度COB封装白光LED模块及其封装方法,本领域技术人员可通过借鉴本文内容,适当改变条件路线等环节实现,尽管本发明的方法和制备技术已通过较佳实施例子进行了描述,相关技术人员明显能在不脱离本发明内容、精神和范围内对本文所述的方法和技术路线进行改动或重新组合,来实现最终的制备技术。特别需要指出的是,所有相类似的替换和改动对本领域技术人员来说是显而易见的,他们都被视为包括在本发明精神、范围和内容中。
Claims (3)
1.高功率密度COB封装白光LED模块;其特征是在陶瓷基板上设置线路层以及用于使封装胶水固定在基板上的围坝栏,线路层上设置用于封装LED芯片的封装单元矩阵;矩阵排列着LED芯片;LED芯片通过纳米银焊膏与基板粘贴;芯片上键合的金线与电源的输入电极和输出电极连接。
2.如权利要求1所述的模块,其特征是陶瓷基板为Al2O3陶瓷基板。
3.高功率密度COB封装白光LED模块的制备方法,其特征是:
(1)将纳米银焊膏用点胶机点在基板上,用贴片机将LED芯片贴合在点胶处,LED芯片呈矩阵排列形成COB的光源部分;
(2)把贴片结束的模块放在加热台上进行烧结;
(3)用超声波金丝球焊机将LED芯片串联并将LED芯片与焊盘连接形成电路;
(4)将硅胶真空脱泡后填充到围坝栏内,经过烘烤封装胶水完全固化。
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