CN102751274A - 一种立体包覆封装的led芯片 - Google Patents

一种立体包覆封装的led芯片 Download PDF

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CN102751274A
CN102751274A CN2012102488650A CN201210248865A CN102751274A CN 102751274 A CN102751274 A CN 102751274A CN 2012102488650 A CN2012102488650 A CN 2012102488650A CN 201210248865 A CN201210248865 A CN 201210248865A CN 102751274 A CN102751274 A CN 102751274A
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chip
led chip
fluorescent powder
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led
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瞿崧
严华锋
文国军
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Shanghai Dangoo Electronic Trading Co Ltd
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Priority to PCT/CN2013/000134 priority patent/WO2014012346A1/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

Abstract

本发明公开了一种立体包覆封装的LED芯片,特点是,选用正装或倒装的单颗LED芯片或多颗串并联组成的LED芯片的六个面上涂敷有荧光粉并在其外围通过透明材料固定,进行立体包覆或将单颗LED芯片或多颗串并联组成的LED芯片选用正装或倒装的结构置于透明材料制成的球状或管状的壳体中,通过壳体内壁涂敷有荧光粉层或在透明材料中混入荧光粉来立体包覆LED芯片或于LED芯片上先通过透明材料包覆,再于透明材料上涂覆荧光粉;或在荧光粉涂覆完毕后再加一层透明壳体材料加以保护荧光粉的立体包覆。本发明的有益效果是:采用最简单的荧光粉包覆工艺,使LED芯片全方位发光,相比较于传统的单侧发光方式,减少LED芯片发光的损耗。

Description

一种立体包覆封装的LED芯片
技术领域
本发明涉及一种LED芯片,特别涉及一种立体包覆封装的LED芯片,属于LED芯片制造领域。
背景技术
    LED是发光二极管 (LED,Lighting emitted diode),是利用在电场作用下,PN结发光的固态发光器件。具有高寿命/环保/节能的特点,是绿色环保的新光源。LED技术日趋发展成熟,目前通常LED发白光是通过蓝色芯片激发黄绿荧光粉,进行波长调和而产生出的白光,市场上大规模生产的暖白光效率达到 120 lm/W,超过大部分传统光源。一般而言,LED是通过MOCVD(Metal-organic Chemical Vapor Deposition,金属有机化合物化学气相沉淀)在蓝宝石衬底或碳化硅衬底上长出p型层、n型层以及p-n结发光层,然后通过点亮、切割、扩散颗粒、分等级等工艺做成不同尺寸的芯片,一般而言有10*10 mil, 10*23 mil, 24*24 mil, 40*40 mil等尺寸,可以承受从10mA~1A的恒流电流驱动。传统的封装是将这些芯片固定在一个封装支架上,通过金线焊接芯片的阴极和阳极,通入电流来驱动LED发出蓝色单波长光,从而激发黄绿荧光粉形成白光。支架一般采用工程塑料或者是带金属热沉的塑料,然后通过底部反射来增加其光萃取率,或者是通过硅胶,树脂或玻璃成型或带二次光学透镜来改变内部材料的折射率,从而增加其出光。
传统的封装方式,对于LED芯片的光利用率相当低,一般来讲,LED芯片背面侧面发出的光经过反射/折射之后,其光利用率不超过40%,而LED芯片在背面侧面发出的光占其整个芯片出光的60%,意味着接近有40%的光是被浪费掉的。另外传统的荧光粉点胶工艺,因为荧光粉贴近温度较高的芯片发热源,从而导致荧光粉效率降低,也会影响出光效果。出光效率的降低则意味着发热量的增加,从而对电子元器件的可靠性产生影响,这都是相互影响的结果。由于LED芯片通过封装成LED组件,然后在分别焊接在铝基板上,配上适合的驱动电源和结构壳体,最后做成整灯进行销售。这中间有过多的环节造成效率和成本的浪费。因此,基于简化的目的,通过设计一种最简单的封装结构,提高整体系统出光效率并降低成本。
发明内容
本发明的目的是为了克服LED芯片制造中由于现有封装结构使LED芯片光利用率低的缺点,提供一种立体包覆封装的LED芯片。
为此,本发明的技术方案是,一种立体包覆封装的LED芯片,包括单颗LED芯片或多颗串并联组成的LED芯片,特点是,选用正装或倒装结构的单颗LED芯片或多颗串并联组成的LED芯片的六个面上涂敷有荧光粉并在涂敷有荧光粉的外汇通过透明材料固定, 进行立体包覆或将所述的单颗LED芯片和多颗串并联组成的LED芯片选用正装或倒装的结构置于透明材料制成的球状或管状的壳体中,通过壳体内壁涂敷有荧光粉层或在透明材料本身中混入荧光粉来立体包覆LED芯片或于LED芯片上先涂覆荧光粉再包覆透明材料,亦或透明材料包覆LED芯片之后再于透明材料上涂覆荧光粉.或在荧光粉涂覆完毕后再加一层透明壳体材料加以保护荧光粉的立体包覆。
所述的LED芯片包含单颗芯片或多颗串联芯片,根据不同的封装方式选用正装芯片和倒装芯片类型;所述的LED芯片包含单颗芯片和多颗串并联芯片的引出导线为金属导线,金属薄膜导线或者是氧化铟锡(ITO)透明导线;正装LED芯片,用金线加上球焊技术进行焊接,倒装LED芯片并用共晶焊接技术焊接在导线上。
所述的透明材料为玻璃,硅胶,树脂或者是有机薄膜。
本发明的有益效果是:本发明的立体包覆封装的LED芯片使得LED芯片的全方位发光能够全方位激发包覆在周围的荧光粉,相比较于传统的单侧发光方式,能够最小的减少LED芯片发光的损耗。并且采用最简单的荧光粉包覆工艺,同时降低了成本。
附图说明
图1为倒装LED芯片,置于壳体内壁涂敷有荧光粉层的封装结构示意图;
图2为正装LED芯片,置于壳体内壁涂敷有荧光粉层的封装结构示意图;
图3为倒装LED芯片包覆有荧光粉硅胶层的封装结构示意图;
图4为正装LED芯片包覆有有荧光粉硅胶的封装结构示意图;
图5为倒装LED芯片表面涂覆荧光粉后用透明薄膜密封的封装结构示意图;
图6为正装LED芯片表面涂覆荧光粉后用透明薄膜密封的封装结构示意图;
图7为多颗连接LED芯片,置于壳体或薄膜内涂敷有荧光粉层的封装结构平面示意图;
图8为多颗连接LED芯片,包覆有荧光粉硅胶层的封装结构平面示意图。
图中:1透明材料制成的管状壳体或薄膜;2荧光粉层;3倒装LED芯片;4共晶焊点;5导线;6为透明硅胶、透明树脂或透明玻璃;7正装LED芯片;8金线;9球焊点;10荧光粉硅胶;11两端接线焊盘。
具体实施方式
结合附图和实施例对本发明做出进一步说明。
实施例1:
由图1所示,由单颗倒装LED芯片3置于透明材料制成的球状壳体1中,通过壳体内壁涂敷有荧光粉层2来立体包覆LED芯片,针对倒装芯片,直接通过共晶焊点4连接在导线5上,置于透明壳体内的单颗倒装LED芯片通过灌注透明硅胶6固定。
实施例2:
由图2所示,由单颗正装LED芯片7置于透明材料制成的球状壳体1中,通过壳体内壁涂敷有荧光粉层2来立体包覆LED芯片,针对正装芯片,通过球焊点9和金线8和导线5连接,置于透明壳体内的单颗正装LED芯片7通过灌注透明硅胶6固定。
实施例3:
由图3所示,由单颗倒装LED芯片3直接通过共晶焊点4连接在导线5上。将荧光粉通过喷涂、浸蘸等工艺包覆在LED芯片六面周围,形成荧光粉层2,并用透明材料制成的薄膜1包覆起来并固定,均匀包覆在LED芯片周围,形成立体发光。
实施例4:
由图4所示,由单颗正装LED芯片7通过球焊点9和金线8和导线5连接。将荧光粉通过喷涂、浸蘸等工艺包覆在LED芯片六面周围,形成荧光粉层2,并用透明材料制成的薄膜1包覆起来并固定,均匀包覆在LED芯片周围,形成立体发光。
实施例1、2、3、4中导线5用材料可以是金属导线,也可以是透明氧化铟锡导线。实施例1和实施例2中壳体内壁涂敷有荧光粉层2来立体包覆LED芯片,即通过在玻璃或者是有机薄膜上涂敷荧光粉,这种通过远距离荧光粉包覆的方法,它不直接接触芯片,两者的热量有效的相互隔离,大幅提升外量子效率并减低热量,外量子效率的提升可减少散热器件的容积达到减少光阻挡的目的,提高光电转换效率;可进入减低热量提升效率的良性循环。
实施例3和实施例4,采用另外一种立体包覆方式,通过直接涂敷荧光粉,并用透明材料薄膜包覆固定,形成立体发光,形成光源发光器件;荧光粉可以通过不同的涂覆方式,如喷涂、印刷或浸蘸等工艺包覆LED芯片。
实施例5:
由图5所示,荧光粉硅胶层10是充有荧光粉的硅胶通过注塑模具成型的。将荧光粉硅胶灌入事先预设好的模具中,并在150℃精密烘箱中烘烤成型,模具设计可以是半球状也可以是平面状。成型的荧光粉硅胶层,可以预先布置导线5,倒装LED芯片3,直接通过共晶焊点4连接在导线5上。将已经布好LED芯片的荧光粉硅胶层表面再次覆盖注塑模具,并在模具中灌入荧光粉硅胶,由于其是流体材质,将荧光粉硅胶层10均匀包覆在LED芯片周围,然后通过烘烤最后成型;
实施例6:
由图6所示,荧光粉硅胶层10是充有荧光粉的硅胶通过注塑模具成型的。将荧光粉硅胶灌入事先预设好的模具中,并在150℃精密烘箱中烘烤成型,模具设计可以是半球状也可以是平面状。成型的荧光粉硅胶层,可以预先布置导线5,正装LED芯片7通过球焊点9和金线8和导线5连接。将已经布好LED芯片的荧光粉硅胶层表面再次覆盖注塑模具,并在模具中灌入荧光粉硅胶,由于其是流体材质,将荧光粉硅胶层10均匀包覆在LED芯片周围,然后通过烘烤最后成型;
实施例5和实施例6采用另外一种立体包覆方式,形成立体发光,形成光源发光器件;荧光粉硅胶10是荧光粉混合硅胶;所用导线5的材料可以是金属导线,也可以是透明氧化铟锡导线;其导线电路为预先排布在荧光粉硅胶层上。实施例5和实施例6采用的荧光粉硅胶亦可用荧光粉混合树脂或用玻璃材料中灌注荧光粉来代替。
实施例7:
由图7所示,采用倒装或正装的多颗连接LED芯片3或7置于玻璃管壳体1内,玻璃管壳体1内涂敷有荧光粉层2,在玻璃管壳体1内包覆封装多颗连接LED芯片通过导线5、焊盘11和外接电源相连接。壳体也可由有机薄膜制成。
实施例8:
由图8所示,采用倒装或正装的多颗连接LED芯片3或7包覆有荧光粉硅胶10,被荧光粉硅胶10包覆的倒装或正装的多颗连接LED芯片3或7通过导线5、焊盘11和外接电源相连接。
根据用户需要,尚另有一种简单立体包覆,倒装或正装的LED芯片上先通过透明材料包覆固定,再于所包覆透明材料上涂覆荧光粉进行立体包覆,或在荧光粉涂覆完毕后再加一层透明材料加以保护荧光粉的立体包覆。

Claims (3)

1.一种立体包覆封装的LED芯片,包括单颗LED芯片或多颗串并联组成的
LED芯片,特征在于,选用正装或倒装结构的单颗LED芯片或多颗串并联组成的LED芯片的六个面上涂敷有荧光粉并在涂敷有荧光粉的外围通过透明材料固定, 进行立体包覆或将所述的单颗LED芯片和多颗串并联组成的LED芯片选用正装或倒装的结构置于透明材料制成的球状或管状的壳体中,通过壳体内壁涂敷有荧光粉层或在透明材料本身中混入荧光粉来立体包覆LED芯片或于LED芯片上先通过透明材料包覆,再于所包覆透明材料上涂覆荧光粉进行立体包覆,或在荧光粉涂覆完毕后再加一层透明壳体材料加以保护荧光粉的立体包覆。
2.根据权利要求1所述的立体包覆封装的LED芯片,其特征在于,所述的正装芯片和倒装芯片的引出导线为金属导线,金属薄膜导线或者是氧化铟锡ITO透明导线;正装LED芯片通过金线加上球焊点进行连接,倒装LED芯片用共晶焊点焊接在导线上。
3.根据权利要求1所述的立体包覆封装的LED芯片,其特征在于,所述的透明材料为玻璃,硅胶,树脂或者是有机薄膜。
CN2012102488650A 2012-07-18 2012-07-18 一种立体包覆封装的led芯片 Pending CN102751274A (zh)

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US10845008B2 (en) 2014-09-28 2020-11-24 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
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US11073248B2 (en) 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
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CN103178196B (zh) * 2013-03-19 2016-02-10 东南大学 球形白光led封装结构
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US10627098B2 (en) 2015-06-10 2020-04-21 Jiaxing Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb having the same
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CN105047654A (zh) * 2015-07-28 2015-11-11 浙江亿米光电科技有限公司 立体发光灯丝、加工工艺以及led照明装置
CN105047654B (zh) * 2015-07-28 2017-10-17 浙江亿米光电科技有限公司 立体发光灯丝、加工工艺以及led照明装置
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US10228093B2 (en) 2015-08-17 2019-03-12 Jiaxing Super Lighting Electric Appliance Co., Ltd LED light bulb and LED filament thereof
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CN105336832B (zh) * 2015-09-29 2017-09-22 旭宇光电(深圳)股份有限公司 一种led灯丝
CN105336832A (zh) * 2015-09-29 2016-02-17 杭州派尼澳电子科技有限公司 一种led灯丝及其制备方法
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Application publication date: 20121024