TWI644454B - Light-emitting diode structure - Google Patents

Light-emitting diode structure Download PDF

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TWI644454B
TWI644454B TW104127062A TW104127062A TWI644454B TW I644454 B TWI644454 B TW I644454B TW 104127062 A TW104127062 A TW 104127062A TW 104127062 A TW104127062 A TW 104127062A TW I644454 B TWI644454 B TW I644454B
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light
emitting diode
type semiconductor
substrate
emitting
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TW104127062A
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TW201709563A (zh
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廖宗仁
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佰鴻工業股份有限公司
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Priority to TW104127062A priority Critical patent/TWI644454B/zh
Priority to CN201510648224.8A priority patent/CN106469775A/zh
Priority to US15/016,501 priority patent/US9728691B2/en
Priority to EP16160018.4A priority patent/EP3133653A1/en
Publication of TW201709563A publication Critical patent/TW201709563A/zh
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Abstract

本發明有關於一種發光二極體之結構，其包含一發光二極體單元，該發光二極體單元摻入複數個螢光粉於該發光二極體單元之一發光層一側之至少任一層；亦或是該發光二極體單元排列複數個螢光粉顆粒於該發光二極體單元之至少一出光面，如此以不使用膠體進行螢光粉的設置或封裝方式，則不會發生因發光二極體之結構長時間高溫狀態，而導致膠體黃化，而影響發光二極體之發光效率，並同時產生色偏的情況。

Description

發光二極體之結構
本發明係有關於一種發光二極體之結構，尤指對於一種除去黃化現象之發光二極體之結構。
目前生活上有各式各樣發光二極體的相關應用，例如交通號誌、機車尾燈、路燈、電腦指示燈、汽車頭燈等等，除了必要的LED晶片製程外，都必須經過將發光二極體進行封裝的程序。
傳統發光二極體(Light-Emitting Diode；LED)的封裝形式，因外觀的關係被稱為炮彈型或5mm LED，而此種的封裝形式的技術最為成熟，且封裝工業也普遍認為此種封裝方式是最為經濟與方便的封裝製程。
發光二極體的封裝功能在於提供發光二極體晶片電能、光能與散熱的必要支援。例如半導體元件長時間暴露在大氣中，會受到水器或其他環境中的化學物值影響而老化，造成特性的衰退，選用高透明度的環氧樹脂包覆發光二極體，是一個有效隔絕大氣的方法，另外選用適合的基材提供發光二極體元件足夠的機械保護，使發光二極體的可靠度大幅提升。
除此之外，發光二極體封裝還需要有良好的散熱性及光萃取效率，由其散熱問題更值得重視。若未能即時使熱散出，累積在元件中的熱對元件的特性壽命及可靠度都會產生不良的影響。
目前有關於傳統發光二極體一般使用邊長約0.3mm或更小的晶片，利用銀膠(Ag paste)將晶片接合在導線框架(Lead frame)的反射罩(Reflector cup)上，反射罩用於收集晶片側壁所發出來的光，並反射至所需要的方向，接著，使用金線連接晶片正極與一隻引腳(lead wire)，負極則是反射杯與另一引腳相連接，再用高溫固化的環氧樹脂(Epoxy)包覆頂部。於發光二極體使用時，以20mA得電流做驅動，約有90%的熱能必須由負極經過反射罩傳導至引腳上，引入PCB板，但因為導線架之導熱特性不佳，其熱阻高達250~300℃/W，使LED散熱不良而導致溫度上升，因高溫影響到包覆發光二極體的封裝材料，例如：環氧樹脂，使環氧樹脂產生黃化，進而影響到發光二極體的發光效率、並使光線產生色偏以及發光二極體的使用壽命。
故，本發明針對於習知技術之缺點進行改良，而提供一種發光二極體之結構，改善習知技術之發光二極體晶片的封裝膠體會因發光二極體晶片之高溫產生黃化，而影響發光二極體之發光效果，所以螢光粉以不利用封裝膠體的方式，而設置於發光二極體晶片。
本發明之一目的，在於提供一種發光二極體之結構，利用螢光粉摻入之方式，而不需再額外利用封裝膠體混合螢光粉進行發光二極體晶片的封裝，以避免發光二極體的高溫影響封裝膠體，導致封裝膠體黃化而影響發光二極體之發光效率。
本發明之一目的，在於提供一種發光二極體之結構，利用螢光粉直接排列於發光二極體晶片之出光面，而不需再額外利用封裝膠 體混合螢光粉進行發光二極體晶片的封裝，以避免發光二極體的高溫影響封裝膠體，導致封裝膠體黃化而影響發光二極體之發光效率。
為達上述所指稱之一目的及功效，本發明提供一種發光二極體之結構，其包含：一發光二極體單元，該發光二極體單元摻入複數個螢光粉於該發光二極體單元之一發光層一側之至少任一層。
本發明提供另一種發光二極體之結構，其包含一發光二極體單元，該發光二極體單元排列複數個螢光粉於該發光二極體單元之至少一出光面。
11、11A‧‧‧發光二極體單元
111、111A‧‧‧第一基板、第二基板
1111‧‧‧第一側面
1112‧‧‧第二側面
112‧‧‧N型半導體層
113‧‧‧發光層
114‧‧‧P型半導體層
12‧‧‧螢光粉
13、13A、13B、13C‧‧‧發光二極體晶片
第一圖：其係為本發明之第一實施例之發光二極體之結構之示意圖；第二圖：其係為本發明之第二實施例之發光二極體之結構之示意圖；第三圖：其係為本發明之第三實施例之發光二極體之結構之示意圖；第四圖：其係為本發明之第四實施例之發光二極體之結構之示意圖；第五圖：其係為本發明之第五實施例之發光二極體之結構之示意圖；第六圖：其係為本發明之第六實施例之發光二極體之結構之示意圖；第七圖：其係為本發明之第七實施例之發光二極體之結構之示意圖； 第八圖：其係為本發明之第八實施例之發光二極體之結構之示意圖；第九圖：其係為本發明之第九實施例之發光二極體之結構之示意圖；第十圖：其係為本發明之第十實施例之發光二極體之結構之示意圖；第十一圖：其係為本發明之第十一實施例之發光二極體之結構之示意圖；第十二圖：其係為本發明之第十二實施例之發光二極體之結構之示意圖；以及第十三圖：其係為本發明之第十三實施例之發光二極體之結構之示意圖。
為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細之說明，說明如後：目前針對於發光二極體封裝需要有良好的散熱性及光萃取效率，而以散熱問題更值得重視。若未能即時使熱散出，累積在元件中的熱對元件的特性壽命及可靠度都會產生不良的影響，尤其是封裝於發光二極體晶片之封裝膠體，封裝膠體的材料為環氧樹脂，而發光二極體所發出之高溫容易影響到包覆發光二極體的環氧樹脂，環氧樹脂之一般使用溫度為-50~150度C，長時間高溫使環氧樹脂產生黃化，進而影響到發光二極體的發光效率以及發光二極體的使用壽命。
請參閱第一圖，其係為本發明之第一實施例之發光二極體之結構之示意圖；如圖所示，本實施例為一種發光二極體之結構，該發光二極體之結構包含一發光二極體單元11，於該發光二極體單元11摻入複數個螢光粉12於該發光二極體單元11之一發光層一側至少一層，本實例以該發光二極體單元之一第一基板111為例做一說明，摻雜至任一層之技術應屬本技術之該項技藝者，可據以實施。
承上所述，該發光二極體單元11之該第一基板111具有一第一側面1111與相對於該第一側面1111之一第二側面1112，一N型半導體層112設置於該第一基板111之該第一側面1111，一發光層113設置於該N型板導體層112相對於不具有該透明基板111之一側，一P型半導體層114設置於該發光層113相對於不具有該N型板導體層112之一側。
於本實施例中，第一基板111之材質可為藍寶石、玻璃或陶瓷等等材料，本實施例以藍寶石基板為例，進行以下說明，藍寶石(Al2O3，Sapphire)為製成氮化鎵(GaN)磊晶發光層的主要基板材質，氮化鎵可用來製作超高亮度藍光、綠光、藍綠光與白光LED。藍寶石組成為氧化鋁(Al2O3)是由三個氧原子和兩個鋁原子以共價鍵型式結合，晶體結構為六方晶格結構，藍寶石的光學穿透帶很寬，從近紫外光到中紅外線都有很好的透光性，目前來說，國內藍寶石晶體常用的生長方式為柴式拉晶法(簡稱CZ法)與凱式長晶法(KY)等方式，將該些個螢光粉12摻入於藍寶石基板的製造過程中，使製造出的藍寶石基板本身就帶有該些個螢光粉12，如此不需再利用膠體混合該些個螢光粉12對發光二極體之結構進行封 裝，再者，也可利用相同方法於玻璃與陶瓷材料所製造出的透明基板，另外，本實施例之該些個螢光粉12可依據使用者之需求選用螢光粉顏色。
本實施例係針對於習知發光二極體之結構的技術作改良，一般而言，若要調整發光二極體之結構所發出之光線，大多係於將發光二極體之晶粒進行加工封裝時，利用螢光粉混合封裝膠體後，再一併將發光二極體晶片進行封裝，使發光二極體晶片之光線於通過封裝膠體內之螢光粉而改變原來的光線顏色，但是，由於現有的封裝膠體材料大多數為環氧樹脂(Epoxy)與矽氧烷(Silicone)，而此兩種材料無法長期耐高溫，發光二極體於發光時，長時間的高溫情況下，而導致環氧樹脂黃化，進而影響發光二極體之結構的發光效果，並有色偏的情形發生，故，本發明提供一種發光二極體之結構，其於製作該第一基板111的過程中，將該些個螢光粉12摻入於該第一基板111內，以代替利用膠體方式設置該些個螢光粉12，而因利用不含膠體方式設置發光二極體晶片，所以該發光二極體之結構不會因為長期高溫，而導致膠體黃化而影響發光效果，也不會發生色偏的情形。
請參閱第二圖至第四圖，其係為本發明之第二至第四實施例之發光二極體之結構之示意圖；如圖所示，第二至第四實施例與第一實施例之差異在於，第二到第四實施例所敘述的發光二極體之結構之一發光二極體單元11A係晶粒於加工處理後的狀態，於本實施例中，該發光二極體單元11A加工處理方式係以COB(Chip on board)的封裝形式作為說明，直接將裸晶粒(die)黏貼在電路板(PCB)上，並將導線/焊線(wire)直接焊接(Bonding)在電路板的 鍍金線路上，但是，本實施例與習知技術不同的是，並不再以封裝膠體進行晶片封裝，另外，本實施例並不限晶粒加工方式為SMD(Surface Mounted Diode)或COB(Chip on board)等晶片設置方式，此兩種方式皆省略以封裝膠體進行晶片固晶的步驟，都以不含膠體的形式進行，該發光二極體之結構之該發光二極體單元11A更包含一發光二極體晶片13，該發光二極體晶片13設置於該第二基板111A。
請復參閱第二圖，於第二實施例中，該發光二極體晶片13係為一水平式發光二極體晶片13A，並以COB的形式安裝於該第二基板111A上，再參閱第三圖，第三實施例與第二實施例之差異在於，該發光二極體晶片13係為一垂直式發光二極體晶片13B，另參閱第四圖，第四實施例與第二實施例之差異在於，該發光二極體晶片13係為一垂直式發光二極體晶片13C，於此提供不同形式的實施例。
請一併參閱第五圖與第六圖，其係為本發明之第五至第六實施例之發光二極體之結構之示意圖；如圖所示，第五至第六實施例與第一實施例之差異在於，第五至第六實施例除了將未進行加工處理的晶粒狀態的該第一基板111摻入該些個螢光粉12後，進一步將晶粒進行加工處理而固晶於該第二基板111A(即封裝基板)上，而該第二基板111A也摻入該些個螢光粉12。
復參閱第五圖，於第五實施例中，其係將該水平式發光二極體晶片13A之該第一基板111摻入該些個螢光粉12，並將該第一基板111設置於該第二基板111A(即封裝基板)，而該第二基板111A同樣摻入該些個螢光粉12，用於該發光二極體單元11為單一方向之 出光面，再者，再請參閱第六圖，第六實施例與第五實施例之差異在於，第六實施例係將該覆晶式發光二極體晶片13C之該第一基板111摻入該些個螢光粉12，而該第二基板111A同樣摻入該些個螢光粉12，而該發光二極體單元11之該P型半導體層114之一側設置於該第二基板111A之一側，以此方式該第一基板111與該第二基板111A分別位於該發光二極體單元11之兩側，該發光二極體單元11之出光面為上下兩方向，進一步該發光二極體單元11A之二出光面可能因為直接出光或是反射出光的因素而導致出光面得出光強度有別，故，位於該發光二極體單元11A之出光量較大的表面的該些個螢光粉12數量大於位於該發光二極體單元11A之出光量較小的表面的該些個螢光粉12數量，其螢光粉摻雜比例可根據實據需要而予以調整在不同的發光層一側之二層結構上。
請參閱第七圖與第八圖，其係為本發明之第七至第八實施例之發光二極體之結構之示意圖；如圖所示，第七實施例與第八實施例提供一種發光二極體之結構，其包含一發光二極體單元11，該發光二極體單元11係從晶圓切割下來後未進行加工處理的晶粒，複數個螢光粉12排列於該發光二極體單元11之出光面，其中有多種方式能將該些個螢光粉12以粉狀顆粒直接排列於該發光二極體單元11之出光面，而該些個螢光粉12之排列方式為蒸鍍、濺鍍或離子佈值等等，將該些個螢光粉12以不透過膠體的方式覆蓋於該發光二極體單元11之出光面，而本實施例並不限定這些排列方式，但上述方式為習知技術，故，不加以贅述，本實施例以結構圖示進行說明。
承上所述，第七圖說明第七實施例之該發光二極體單元11之出光 面為該N型半導體112與該P型半導體114之表面，而該些個螢光粉12排列於該N型半導體112與該P型半導體114之表面，而第八圖說明第八實施例之該發光二極體單元11之出光面為該第一基板111之表面，而該些個螢光粉12排列於該第一基板111之表面。
請參閱第九圖與第十圖，其係為本發明之第九至第十實施例之發光二極體之結構之示意圖；如圖所示，第九至第十實施例與第七至第八實施例之差異在於，第九至第十實施例之該發光二極體單元11為兩面出光，其出光面分別為該N型半導體112與該P型半導體114之表面以及該第一基板111之表面，而該些個螢光粉12則排列於該N型半導體112與該P型半導體114之表面以及該第一基板111之表面，其中該發光二極體單元11之二出光面因為直接出光或是反射出光的因素而導致出光面得出光強度有別，故，位於該發光二極體單元11之出光量較大的出光面的該些個螢光粉12數量大於位於該發光二極體單元11之出光量較小的出光面的該些個螢光粉12數量。
請參閱第十一圖至第十三圖，其係為本發明之第十一至第十三實施例之發光二極體之結構之示意圖；如圖所示，第十一實施例與第十三實施例提供一發光二極體單元11，其包含一發光二極體晶片13，該發光二極體晶片13係晶粒於加工處理後的狀態，而於該發光二極體晶片13設置於該第二基板111A，再將該些個螢光粉12排列於該發光二極體晶片13與該第二基板111A之出光面。
於第十一圖之該第十一實施例係說明該發光二極體晶片13係為一水平式發光二極體晶片13A，並將該些個螢光粉12排列於該發光二極體晶片13A之出光面與該第二基板111A上，再參閱第十二圖 ，第十二實施例與第十一實施例之差異在於，該發光二極體晶片13係為一垂直式發光二極體晶片13B，另參閱第四圖，第四實施例與第二實施例之差異在於，該發光二極體晶片13係為一垂直式發光二極體晶片13C，於此提供不同形式的實施例。
綜上所述，本發明為一種發光二極體之結構，其包含一發光二極體單元，該發光二極體單元摻入複數個螢光粉於該發光二極體單元之發光層一側之至少任一層；亦或是該發光二極體單元排列複數個螢光粉於該發光二極體單元之至少一出光面，如此以不使用膠體進行螢光粉的設置或封裝方式，則發光二極體之結構不會因高溫導致膠體黃化，而影響發光二極體之結構之發光效果，另外，本發明並不限制為水平式發光二極體、垂直式發光二極體或覆晶式發光二極體等等態樣，也不限定其為COB或SMD等封裝形式，皆可應用本發明之技術特徵。
惟以上所述者，僅為本發明一較佳實施例而已，並非用來限定本發明實施之範圍，故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
故本發明實為一具有新穎性、進步性及可供產業上利用者，應符合我國專利法專利申請要件無疑，爰依法提出發明專利申請，祈鈞局早日賜至准專利，至感為禱。

Claims (10)

  1. 一種發光二極體之結構，其包含：一發光二極體單元，其由下至上包含一基板、一N型半導體層、一發光層與一P型半導體層，並摻入複數個螢光粉於該發光二極體單元之該發光層一側之該基板、該N型半導體層或該P型半導體層中；其中，該基板摻入該些個螢光粉時，該基板更包含一第一基板與一第二基板，該第一基板設置於該第二基板之上，則該些個螢光粉摻入該第一基板或/及該第二基板。
  2. 一種發光二極體之結構，其包含：一發光二極體單元，其由下至上包含一基板、一N型半導體層、一發光層與一P型半導體層，並摻入複數個螢光粉於該發光二極體單元之該發光層一側之該基板、該N型半導體層或該P型半導體層中；其中，該基板摻入該些個螢光粉時，該些個螢光粉更摻入於該N型半導體層或/及該P型半導體層。
  3. 一種發光二極體之結構，其包含：一發光二極體單元，其由下至上包含一基板、一N型半導體層、一發光層與一P型半導體層，並摻入複數個螢光粉於該發光二極體單元 之該發光層一側之該基板、該N型半導體層或該P型半導體層中；其中，該N型半導體層摻入該些個螢光粉時，該些個螢光粉更摻入於該P型半導體層。
  4. 如申請專利範圍第2或3項所述之發光二極體之結構，其中該些個螢光粉摻入該基板與該N型半導體層、該基板與該P型半導體層、該P型半導體層與該N型半導體層，亦或是該基板、該N型半導體層與該P型半導體層時，上述各組合所摻雜該些螢光粉之比例不相同。
  5. 一種發光二極體之結構，其包含：一發光二極體單元，其由下至上包含一基板、一N型半導體層、一發光層與一P型半導體層，並摻入複數個螢光粉於該發光二極體單元之該發光層一側之該基板、該N型半導體層或該P型半導體層中；其中，該基板為一第一基板，該發光二極體單元倒裝設置並電性連接於一第二基板之上。
  6. 如申請專利範圍第5項所述之發光二極體之結構，其中該些個螢光粉更摻入於該第二基板。
  7. 一種發光二極體之結構，其包含：一發光二極體單元，其以蒸鍍、濺鍍或離子佈值方式將複數個螢光粉顆粒排列於該發光二極體單元之至少一出光面，該出光面 為一N型半導體與一P型半導體之表面，其中該些螢光粉係不含膠體。
  8. 一種發光二極體之結構，其包含：一發光二極體單元，其以蒸鍍、濺鍍或離子佈值方式將複數個螢光粉顆粒排列於該發光二極體單元之至少一出光面，該出光面為一透明基板之表面，其中該些螢光粉係不含膠體。
  9. 一種發光二極體之結構，其包含：一發光二極體單元，其以蒸鍍、濺鍍或離子佈值方式將複數個螢光粉顆粒排列於該發光二極體單元之至少一出光面，該出光面為一N型半導體、一P型半導體與一透明基板之表面，其中該些螢光粉係不含膠體。
  10. 如申請專利範圍第7或8或9項所述之發光二極體之結構，其中該些個螢光粉排列於該N型半導體、該P型半導體或該透明基板之表面，位於該發光二極體單元之出光量較大的表面的該些個螢光粉數量大於位於該發光二極體單元之出光量較小的表面的該些個螢光粉數量。
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