CN106299040B - 一种薄膜倒装发光组件的制作方法及其薄膜倒装发光组件 - Google Patents
一种薄膜倒装发光组件的制作方法及其薄膜倒装发光组件 Download PDFInfo
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Abstract
本发明公开了一种薄膜倒装发光组件的制作方法及其薄膜倒装发光组件,包括:提供一发光外延片,所述发光外延片由生长衬底和发光外延叠层构成;提供一绝缘散热基座,并在基座上制作正负键合电极,所述正负键合电极中间的高度差部分采用填充物填平;根据电极对应位置,将发光外延片倒装键合在所述散热基座的键合电极上;剥离所述发光外延片的生长衬底,整面旋涂荧光粉,覆盖所述发光外延叠层;将所述发光外延片进行单一化处理,裸露出散热基座的正负键合电极,形成薄膜倒装发光组件。
Description
技术领域
本发明涉及一种半导体发光器件的制作方法,更具体地为一种薄膜倒装发光组件的制作方法及其薄膜倒装发光组件。
背景技术
固态发光器件的发光二极管,具有低能耗,高寿命,稳定性好,体积小,响应速度快以及发光波长稳定等良好光电特性,被广泛应用于照明、家电、显示屏及指示灯等领域。此类型发光器件在光效、使用寿命等方面均已有可观的进步,有希望成为新一代照明及发光器件主流。
对于采用蓝宝石、AlN等绝缘衬底的LED芯片来说,其衬底的导热率比较低,因此横向结构的LED的PN结的温度比较高。为了解决散热的问题,芯片的倒装焊结构被提出,发光效率和散热效果都有了改进。由于半导体与空气界面存在全反射,半导体LED材料内反射的大多数光被损耗。
发明内容
本发明旨在提出一种薄膜倒装发光组件的制作方法及其薄膜倒装发光组件。
本发明提供一种薄膜倒装发光组件的制作方法,包括工艺步骤:
1)提供一发光外延片,所述发光外延片由生长衬底和发光外延叠层构成;
2)通过蚀刻部分发光外延叠层形成第一电极区,以及在发光外延叠层表面形成反射层,作为第二电极区;
3)分别在第一电极区和第二电极区上形成第一电极和第二电极,所述第一、第二电极中间采用第一绝缘层隔开,第一、第二电极的高度差部分采用第二绝缘层填平;
4)提供一绝缘散热基座,并在基座上制作正负键合电极,所述正负键合电极中间的高度差部分采用填充物填平;
5)根据电极对应位置,将发光外延片倒装键合在所述散热基座的键合电极上;
6)剥离所述发光外延片的生长衬底,整面旋涂荧光粉,覆盖所述发光外延叠层;
7)将所述发光外延片进行单一化处理,裸露出散热基座的正负键合电极,形成薄膜倒装发光组件。
优选地,所述发光外延片采用整面直接键合到所述绝缘散热基座上,并对生长衬底进行激光剥离。
优选地,所述绝缘散热基座上的键合电极为预先布置。
优选地,所述填充物材料选用树脂或光刻胶或二氧化硅或氮化硅或SOG或前述组合。
优选地,所述键合电极材料选用Au或Sn或Cr或Pt或Ni或Co或Cu或Ti或Al或前述组合。
优选地,所述散热基座材料选用陶瓷衬底或者镀上绝缘材料的金属基板或者硅片。
优选地,所述散热基座上的键合电极面积大于所述倒装芯片的键合电极。
优选地,所述荧光粉包裹住所述发光外延叠层表面及侧边。
优选地,所述荧光粉根据发光外延叠层的发光波长需要进行选择。
本发明还提供一种薄膜倒装发光组件,采用如上所述的任一项薄膜倒装发光组件的制作方法制得。
与常规的薄膜倒装发光组件是采用单颗键合剥离衬底相比,本发明采用将发光外延片整面直接键合到所述绝缘散热基座上,并对生长衬底进行激光剥离,大幅提高作业效率;进一步地,在整面倒装外延芯片结构上旋涂荧光粉,可以形成白光发光组件。此外,还可以对外延薄膜的N型半导体层面进行粗化,充分提高发光组件的取光率。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1~12是本发明实施例的制作薄膜倒装发光组件结构的工艺步骤示意图。
图中各标号表示如下:
100:衬底;101:N型半导体层;102:P型半导体层;103:反射层;104:P电极;105:N电极:106:第一绝缘层;107:第二绝缘层;108:第三绝缘层;109:散热基座;110:键合电极;111:填充物;112:荧光粉。
具体实施方式
下面结合示意图对本发明的薄膜倒装发光组件的制作方法进行详细的描述,在进一步介绍本发明之前,应当理解,由于可以对特定的实施例进行改造,因此,本发明并不限于下述的特定实施例。还应当理解,由于本发明的范围只由所附权利要求限定,因此所采用的实施例只是介绍性的,而不是限制性的。除非另有说明,否则这里所用的所有技术和科学用语与本领域的普通技术人员所普遍理解的意义相同。
实施例
如图1所示,提供一蓝宝石作为生长衬底100,并在衬底100上生长具有N型半导体层101、活性层(图中未示出)和P型半导体层102结构的外延薄膜。薄膜由P型的三五族薄膜、N型的三五族薄膜以及发光主动层所构成,三五族薄膜中可以由三族的硼、铝、镓、铟与五族的氮、磷、砷排列组合而成。活性层的发光波长在200nm~1150nm之间,优选紫外波段,如UV-C波段(200~280nm)、UV-B波段(280~315nm)以及UV-A波段(315~380nm)。
如图2所示,利用干蚀刻方法蚀刻出P型半导体层102与N型半导体层101,并在P型半导体层102上制作电极反射层103;电极反射层优选金属层,材质选用Ni/Ag/Ti/Pt;接着,在电极反射层103制作P电极104以及N型半导体层101上制作N电极105,电极的最上层金属为金,结构首选Cr/Pt/Au,也可以是包括Cr、Ni、Co、Cu、Sn、Au在内的任何一种合金制成;在P电极和N电极之间采用绝缘材料隔开,第一绝缘层106优选SiN。利用SiN绝缘材料填充电极与芯片结构中的高度差异,使整个外延片与电极高度几乎一样。
如图3所示,利用第二绝缘层107填平电极与边缘的高度差,材料优选SiO2,也可以选用SOG、树脂或者光刻胶,制作方式包括PECVD或者旋涂法。若干个外延薄膜单元形成的整面倒装外延芯片结构,如图4所示,相邻的外延薄膜单元之间可以采用第三绝缘层108用于隔绝。
如图5所示,提供一绝缘散热基座109,并在基座上预先制作正负键合电极110,便于后续键合步骤对位,正负键合电极的高度一样,并且面积大于倒装芯片的P、N电极;绝缘散热基座109的材料优选陶瓷衬底,也可以选用镀上绝缘材料的金属基板或者硅片;正负键合电极中间的高度差部分采用填充物111填平,即填充物与键合电极的高度几乎持平,填充物111的材料优选SiO2,也可以选用SiN或SOG或者树脂或者光刻胶,制作方式包括PECVD或者旋涂法。
如图6所示,根据电极的位置,利用高温高压,将图4中所示的倒装外延芯片结构直接整面键合至图5中所示的带有正负键合电极的绝缘散热基座上。通过减少键合高度差,从而避免外延层破裂。
如图7所示,利用激光剥离技术,将蓝宝石生长衬底100去除,并用盐酸溶液清洗表面。
如图8所示,对剥离生长衬底后裸露出的外延薄膜进行粗糙化处理。粗糙化处理可以利用研磨、化学蚀刻方式,形成随机或是带有几何排列图形的粗糙尖锥,也可以是锥体或圆球体或方体。需要说明的是,本步骤也可以省去,即不做粗糙化处理。
如图9所示,去除各外延薄膜单元之间的第三绝缘层108,露出绝缘散热基座的键合电极。
如图10所示,在整面倒装外延芯片结构上旋涂荧光粉112,光粉包裹住发光外延叠层表面及侧边,荧光粉种类可根据发光波长需要进行选择,本实施例优选紫外激发白光LED用的荧光粉。
如图11所示,对各外延薄膜单元进行单一化切割处理,裸露出散热基座109的正负键合电极110,便于连接外接电源,从而形成薄膜倒装发光组件,如图12所示。
本发明提供的薄膜倒装发光组件结构及其制作方法,适合制作LED的发光器件,也适用于制作UV-LED,具有可以实现更大单位面积下的光输出的优势。此外,由于容易导热的关系,UV-LED可以更容易达到更大电流密度操作。
应当理解的是,上述具体实施方案仅为本发明的部分优选实施例,以上实施例还可以进行各种组合、变形。本发明的范围不限于以上实施例,凡依本发明所做的任何变更,皆属本发明的保护范围之内。
Claims (10)
1.一种薄膜倒装发光组件的制作方法,包括工艺步骤:
1)提供一发光外延片,所述发光外延片由生长衬底和发光外延叠层构成;
2)通过蚀刻部分发光外延叠层形成第一电极区,以及在发光外延叠层表面形成反射层,作为第二电极区;
3)分别在第一电极区和第二电极区上形成第一电极和第二电极,所述第一、第二电极中间采用第一绝缘层隔开,第一、第二电极的高度差部分采用第二绝缘层填平;
4)提供一绝缘散热基座,并在基座上制作正负键合电极,所述正负键合电极中间的高度差部分采用填充物填平;
5)根据电极对应位置,将发光外延片倒装键合在所述散热基座的键合电极上;
6)剥离所述发光外延片的生长衬底,整面旋涂荧光粉,覆盖所述发光外延叠层;
7)将所述发光外延片进行单一化处理,裸露出散热基座的正负键合电极,形成薄膜倒装发光组件。
2.根据权利要求1所述的一种制作薄膜倒装发光组件的方法,其特征在于:所述发光外延片采用整面直接键合到所述绝缘散热基座上,并对生长衬底进行激光剥离。
3.根据权利要求1所述的一种薄膜倒装发光组件的制作方法,其特征在于:所述绝缘散热基座上的键合电极为预先布置。
4.根据权利要求1所述的一种薄膜倒装发光组件的制作方法,其特征在于:所述填充物材料选用树脂或光刻胶或二氧化硅或氮化硅或SOG或前述组合。
5.根据权利要求1所述的一种薄膜倒装发光组件的制作方法,其特征在于:所述键合电极材料选用Au或Sn或Cr或Pt或Ni或Co或Cu或Ti或Al或前述组合。
6.根据权利要求1所述的一种薄膜倒装发光组件的制作方法,其特征在于:所述散热基座材料选用陶瓷衬底或者镀上绝缘材料的金属基板或者硅片。
7.根据权利要求1所述的一种薄膜倒装发光组件的制作方法,其特征在于:所述散热基座上的键合电极面积大于所述倒装芯片的键合电极。
8.根据权利要求1所述的一种薄膜倒装发光组件的制作方法,其特征在于:所述荧光粉包裹住所述发光外延叠层表面及侧边。
9.根据权利要求1所述的一种薄膜倒装发光组件的制作方法,其特征在于:所述荧光粉根据发光外延叠层的发光波长需要进行选择。
10.薄膜倒装发光组件,其特征在于:采用根据权利要求1~9 中任一项所述的薄膜倒装发光组件的制作方法制得。
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