TWI547528B - 金屬組合物及其製造方法 - Google Patents

金屬組合物及其製造方法 Download PDF

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Publication number
TWI547528B
TWI547528B TW098126808A TW98126808A TWI547528B TW I547528 B TWI547528 B TW I547528B TW 098126808 A TW098126808 A TW 098126808A TW 98126808 A TW98126808 A TW 98126808A TW I547528 B TWI547528 B TW I547528B
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TW
Taiwan
Prior art keywords
group
acrylate
meth
metal
containing composition
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TW098126808A
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English (en)
Chinese (zh)
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TW201012880A (en
Inventor
曼賈拉 馬黎克
約瑟夫Ｊ 史奇威伯
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普羅格責任有限公司
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Publication of TW201012880A publication Critical patent/TW201012880A/zh
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Publication of TWI547528B publication Critical patent/TWI547528B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Chemically Coating (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
TW098126808A 2008-08-07 2009-08-10 金屬組合物及其製造方法 TWI547528B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18818208P 2008-08-07 2008-08-07
PCT/US2009/003841 WO2010059174A1 (en) 2008-08-07 2009-06-27 Metal compositions and methods of making same

Publications (2)

Publication Number Publication Date
TW201012880A TW201012880A (en) 2010-04-01
TWI547528B true TWI547528B (zh) 2016-09-01

Family

ID=42198403

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098126808A TWI547528B (zh) 2008-08-07 2009-08-10 金屬組合物及其製造方法

Country Status (5)

Country Link
US (1) US8802346B2 (cg-RX-API-DMAC7.html)
EP (1) EP2326744B1 (cg-RX-API-DMAC7.html)
JP (1) JP6004649B2 (cg-RX-API-DMAC7.html)
TW (1) TWI547528B (cg-RX-API-DMAC7.html)
WO (1) WO2010059174A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI833785B (zh) * 2018-08-09 2024-03-01 日商三菱化學股份有限公司 全像記錄媒體用組合物及全像記錄媒體

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JP5708521B2 (ja) * 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
CN102605355B (zh) * 2012-02-21 2014-07-02 北京化工大学 基材表面的铜膜、其制备方法及应用
JPWO2013145043A1 (ja) * 2012-03-27 2015-08-03 パナソニックＩｐマネジメント株式会社 ビルドアップ基板およびその製造方法ならびに半導体集積回路パッケージ
KR101486888B1 (ko) 2013-05-20 2015-01-27 한국기계연구원 금속산화박막 패턴형성용 코팅제 및 나노임프린트를 이용한 금속산화박막 패턴형성방법
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WO2016043198A1 (ja) * 2014-09-17 2016-03-24 Jsr株式会社 パターン形成方法
JP6496746B2 (ja) * 2014-10-08 2019-04-03 富士フイルム株式会社 感活性光線性又は感放射線性組成物、並びに、これを用いた、レジスト膜、マスクブランクス、レジストパターン形成方法、及び、電子デバイスの製造方法
JP6618334B2 (ja) 2015-06-03 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法
JP6603487B2 (ja) * 2015-06-22 2019-11-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102465065B1 (ko) * 2015-09-29 2022-11-09 프라이요그, 엘엘씨 금속 조성물 및 이의 제조 방법
JP6742748B2 (ja) * 2016-02-17 2020-08-19 株式会社Ｓｃｒｅｅｎホールディングス 現像ユニット、基板処理装置、現像方法および基板処理方法
JP7002895B2 (ja) * 2016-09-30 2022-01-20 東友ファインケム株式会社 ハードコーティング組成物及びこれを用いたハードコーティングフィルム
JP6980993B2 (ja) 2016-10-06 2021-12-15 信越化学工業株式会社 レジスト材料及びパターン形成方法
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KR102307977B1 (ko) 2018-07-31 2021-09-30 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
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JP7351257B2 (ja) 2019-08-14 2023-09-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
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KR102446362B1 (ko) 2019-10-15 2022-09-21 삼성에스디아이 주식회사 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
JP7622544B2 (ja) 2020-05-18 2025-01-28 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
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JP7484846B2 (ja) 2020-09-28 2024-05-16 信越化学工業株式会社 分子レジスト組成物及びパターン形成方法
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CN114317076B (zh) * 2021-12-14 2022-10-25 菏泽学院 一种同核异壳纳米颗粒电流变液及其制备方法

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Also Published As

Publication number Publication date
EP2326744A4 (en) 2017-02-08
US8802346B2 (en) 2014-08-12
TW201012880A (en) 2010-04-01
US20110184139A1 (en) 2011-07-28
WO2010059174A1 (en) 2010-05-27
EP2326744A1 (en) 2011-06-01
JP2011530652A (ja) 2011-12-22
EP2326744B1 (en) 2022-06-01
JP6004649B2 (ja) 2016-10-12

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