JP6004649B2 - 金属組成物及びその製法 - Google Patents

金属組成物及びその製法 Download PDF

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Publication number
JP6004649B2
JP6004649B2 JP2011522047A JP2011522047A JP6004649B2 JP 6004649 B2 JP6004649 B2 JP 6004649B2 JP 2011522047 A JP2011522047 A JP 2011522047A JP 2011522047 A JP2011522047 A JP 2011522047A JP 6004649 B2 JP6004649 B2 JP 6004649B2
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acrylate
meth
metal
carboxylate
group
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Japanese (ja)
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JP2011530652A5 (cg-RX-API-DMAC7.html
JP2011530652A (ja
Inventor
マンガーラ マリク
マンガーラ マリク
ジョセフ ジェー シュワブ
ジョセフ ジェー シュワブ
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Pryog LLC
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Pryog LLC
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Chemically Coating (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
JP2011522047A 2008-08-07 2009-06-27 金属組成物及びその製法 Active JP6004649B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18818208P 2008-08-07 2008-08-07
US61/188,182 2008-08-07
PCT/US2009/003841 WO2010059174A1 (en) 2008-08-07 2009-06-27 Metal compositions and methods of making same

Publications (3)

Publication Number Publication Date
JP2011530652A JP2011530652A (ja) 2011-12-22
JP2011530652A5 JP2011530652A5 (cg-RX-API-DMAC7.html) 2012-08-16
JP6004649B2 true JP6004649B2 (ja) 2016-10-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011522047A Active JP6004649B2 (ja) 2008-08-07 2009-06-27 金属組成物及びその製法

Country Status (5)

Country Link
US (1) US8802346B2 (cg-RX-API-DMAC7.html)
EP (1) EP2326744B1 (cg-RX-API-DMAC7.html)
JP (1) JP6004649B2 (cg-RX-API-DMAC7.html)
TW (1) TWI547528B (cg-RX-API-DMAC7.html)
WO (1) WO2010059174A1 (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11073761B2 (en) 2018-07-31 2021-07-27 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11092889B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11092890B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11415885B2 (en) 2019-10-15 2022-08-16 Samsung Sdi Co., Ltd. Semiconductor photoresist composition, and method of forming patterns using the composition

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2670885B1 (en) * 2011-02-02 2018-04-18 Advenira Enterprises, Inc Solution derived nanocomposite precursor solutions
US10131793B2 (en) 2011-02-02 2018-11-20 Advenira Enterprises, Inc. Modified hybrid sol-gel solutions and compositions formed from such solutions
JP5708521B2 (ja) * 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
CN102605355B (zh) * 2012-02-21 2014-07-02 北京化工大学 基材表面的铜膜、其制备方法及应用
JPWO2013145043A1 (ja) * 2012-03-27 2015-08-03 パナソニックＩｐマネジメント株式会社 ビルドアップ基板およびその製造方法ならびに半導体集積回路パッケージ
KR101486888B1 (ko) 2013-05-20 2015-01-27 한국기계연구원 금속산화박막 패턴형성용 코팅제 및 나노임프린트를 이용한 금속산화박막 패턴형성방법
GB201319263D0 (en) * 2013-10-31 2013-12-18 Montanuniversit T Leoben Method of manufacturing an electrically conductive or semiconductive structure and electronic device comprising the same
JP6196897B2 (ja) 2013-12-05 2017-09-13 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
WO2016043198A1 (ja) * 2014-09-17 2016-03-24 Jsr株式会社 パターン形成方法
JP6496746B2 (ja) * 2014-10-08 2019-04-03 富士フイルム株式会社 感活性光線性又は感放射線性組成物、並びに、これを用いた、レジスト膜、マスクブランクス、レジストパターン形成方法、及び、電子デバイスの製造方法
JP6618334B2 (ja) 2015-06-03 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法
JP6603487B2 (ja) * 2015-06-22 2019-11-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102465065B1 (ko) * 2015-09-29 2022-11-09 프라이요그, 엘엘씨 금속 조성물 및 이의 제조 방법
JP6742748B2 (ja) * 2016-02-17 2020-08-19 株式会社Ｓｃｒｅｅｎホールディングス 現像ユニット、基板処理装置、現像方法および基板処理方法
JP7002895B2 (ja) * 2016-09-30 2022-01-20 東友ファインケム株式会社 ハードコーティング組成物及びこれを用いたハードコーティングフィルム
JP6980993B2 (ja) 2016-10-06 2021-12-15 信越化学工業株式会社 レジスト材料及びパターン形成方法
DE102016125667A1 (de) * 2016-12-23 2018-06-28 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Zusammensetzung zur photochemischen Abscheidung von Metallen
JP2020515722A (ja) * 2017-03-29 2020-05-28 アイエイチ アイピー ホールディングス リミテッド 材料中の水素捕捉空位を増加させるための方法
JP7140686B2 (ja) * 2017-09-11 2022-09-21 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 誘電フィルム形成用組成物
CN112313745B (zh) * 2018-08-09 2022-07-05 三菱化学株式会社 全息记录介质用组合物和全息记录介质
JP7334684B2 (ja) 2019-08-02 2023-08-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7334683B2 (ja) 2019-08-02 2023-08-29 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
WO2021029224A1 (ja) * 2019-08-13 2021-02-18 Jsr株式会社 レジストパターン形成方法及び上層膜形成用組成物
JP7351257B2 (ja) 2019-08-14 2023-09-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7354954B2 (ja) 2019-09-04 2023-10-03 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6831889B2 (ja) * 2019-10-11 2021-02-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7622544B2 (ja) 2020-05-18 2025-01-28 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
US12110592B2 (en) 2020-09-18 2024-10-08 International Business Machines Corporation Generating metal-oxide film
JP7484846B2 (ja) 2020-09-28 2024-05-16 信越化学工業株式会社 分子レジスト組成物及びパターン形成方法
CN117355796A (zh) * 2021-06-01 2024-01-05 东京毅力科创株式会社 光致抗蚀剂组合物、抗蚀剂图案的形成方法、半导体装置的制造方法及基板处理装置
CN114317076B (zh) * 2021-12-14 2022-10-25 菏泽学院 一种同核异壳纳米颗粒电流变液及其制备方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2502411A (en) 1947-08-18 1950-04-04 Rohm & Haas Zirconyl acrylates
NL288151A (cg-RX-API-DMAC7.html) 1961-08-31 1900-01-01
US3379702A (en) 1965-06-14 1968-04-23 Dow Chemical Co Method for preparing terpolymers of ethylene, acrylic acids and salts of acrylic acids
US3705137A (en) 1969-12-04 1972-12-05 Mitsui Mining & Smelting Co Precipitation copolymerization of metal salts of unsaturated carboxylic acids
US3672942A (en) 1969-12-24 1972-06-27 Loctite Corp Process for impregnating porous metal articles
US4022960A (en) 1971-03-15 1977-05-10 Agency Of Industrial Science & Technology Polymers with high transparency and refractive index and process for production thereof
GB1575698A (en) 1976-07-16 1980-09-24 Kyowa Gas Chem Ind Co Ltd Radiation shielding composition and a process for producing the same
US4127524A (en) * 1977-06-16 1978-11-28 Coy David Howard Novel dodecapeptides, intermediates therefor, and compositions and methods employing said dodecapeptides
US4429094A (en) * 1981-04-06 1984-01-31 Arthur D. Little, Inc. Optically transparent radiation shielding material
EP0108985B1 (en) 1982-11-01 1986-10-15 Hitachi, Ltd. Transparent resin material containing metal atoms
US4608409A (en) 1985-05-08 1986-08-26 Desoto, Inc. Polyacrylated oligomers in ultraviolet curable optical fiber coatings
US5159035A (en) 1986-06-10 1992-10-27 The Dow Chemical Company Homogenous copolymerization of non-polar monomers with ionic amphiphilic monomers
DE3824333A1 (de) 1988-07-18 1990-01-25 Fraunhofer Ges Forschung Verfahren zur fixierung einer anorganischen spezies in einer organischen matrix
DE69316126T2 (de) 1992-10-01 1998-08-13 Hitachi Chemical Co Ltd Harz für eine Kunststofflinse
EP0670055B1 (en) 1992-11-19 1997-05-14 The University Of Dundee, University Court Method of deposition
US5484867A (en) 1993-08-12 1996-01-16 The University Of Dayton Process for preparation of polyhedral oligomeric silsesquioxanes and systhesis of polymers containing polyhedral oligomeric silsesqioxane group segments
US5664041A (en) 1993-12-07 1997-09-02 Dsm Desotech, Inc. Coating system for glass adhesion retention
US5534312A (en) 1994-11-14 1996-07-09 Simon Fraser University Method for directly depositing metal containing patterned films
JPH10229080A (ja) * 1996-12-10 1998-08-25 Sony Corp 酸化物の処理方法、アモルファス酸化膜の形成方法およびアモルファス酸化タンタル膜
US6194504B1 (en) 1997-04-28 2001-02-27 Sartomer Technologies, Inc. Process for compounding metal salts in elastomers
MY122234A (en) * 1997-05-13 2006-04-29 Inst Neue Mat Gemein Gmbh Nanostructured moulded bodies and layers and method for producing same
US5856415A (en) 1997-08-28 1999-01-05 Bar-Ray Products, Inc. Optically transparent metal-containing polymers
US6329058B1 (en) 1998-07-30 2001-12-11 3M Innovative Properties Company Nanosize metal oxide particles for producing transparent metal oxide colloids and ceramers
DE19923118A1 (de) 1999-05-19 2000-11-23 Henkel Kgaa Chromfreies Korrosionsschutzmittel und Korrosionsschutzverfahren
US6972256B2 (en) 1999-11-30 2005-12-06 Ebara Corporation Method and apparatus for forming thin film of metal
JP2001200023A (ja) 2000-01-17 2001-07-24 Jsr Corp 硬化性組成物、その硬化物及び積層体
US6849305B2 (en) * 2000-04-28 2005-02-01 Ekc Technology, Inc. Photolytic conversion process to form patterned amorphous film
US7176114B2 (en) 2000-06-06 2007-02-13 Simon Fraser University Method of depositing patterned films of materials using a positive imaging process
US6696363B2 (en) * 2000-06-06 2004-02-24 Ekc Technology, Inc. Method of and apparatus for substrate pre-treatment
US7074640B2 (en) * 2000-06-06 2006-07-11 Simon Fraser University Method of making barrier layers
KR100815735B1 (ko) 2000-09-14 2008-03-20 디에스엠 아이피 어셋츠 비.브이. 플라스틱 기재용 코팅 조성물
US6553169B2 (en) 2000-11-29 2003-04-22 Corning Incorporated Optical fiber coating compositions and coated optical fibers
US6656990B2 (en) 2001-07-11 2003-12-02 Corning Incorporated Curable high refractive index compositions
US20030073042A1 (en) 2001-10-17 2003-04-17 Cernigliaro George J. Process and materials for formation of patterned films of functional materials
GB0213925D0 (en) * 2002-06-18 2002-07-31 Univ Dundee Metallisation
KR100819297B1 (ko) * 2002-06-26 2008-04-02 삼성전자주식회사 고반사율 미세 패턴의 제조방법
US6844950B2 (en) 2003-01-07 2005-01-18 General Electric Company Microstructure-bearing articles of high refractive index
US20040171743A1 (en) 2003-01-21 2004-09-02 Terry Brewer, Ph.D. Hybrid organic-inorganic polymer coatings with high refractive indices
US7105617B2 (en) 2003-02-06 2006-09-12 Georgia Tech Research Corporation Metal 8-hydroxyquinoline-functionalized polymers and related materials and methods of making and using the same
DE10330217B3 (de) 2003-07-03 2004-12-09 Sasol Germany Gmbh Verfahren zur Herstellung von Metallsalzen kurzkettiger ungesättigter Carbonsäuren und Verwendung der erhaltenen Metallsalze
JP2005213567A (ja) * 2004-01-29 2005-08-11 Ebara Corp エネルギー線照射による金属または金属酸化物の析出方法
US7888441B2 (en) 2004-12-13 2011-02-15 Pryog, Llc Metal-containing compositions
JP2005340844A (ja) * 2005-06-13 2005-12-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US20070075628A1 (en) 2005-10-04 2007-04-05 General Electric Company Organic light emitting devices having latent activated layers
US7629424B2 (en) * 2005-12-09 2009-12-08 Pryog, Llc Metal-containing compositions and method of making same
WO2007070092A2 (en) * 2005-12-09 2007-06-21 Pryog, Llc Metal-containing compositions and method of making same
US20080083299A1 (en) 2006-10-06 2008-04-10 General Electric Company Composition and associated method
US7972691B2 (en) * 2006-12-22 2011-07-05 Nanogram Corporation Composites of polymers and metal/metalloid oxide nanoparticles and methods for forming these composites

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11073761B2 (en) 2018-07-31 2021-07-27 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11092889B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11092890B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11789362B2 (en) 2018-07-31 2023-10-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11789361B2 (en) 2018-07-31 2023-10-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11415885B2 (en) 2019-10-15 2022-08-16 Samsung Sdi Co., Ltd. Semiconductor photoresist composition, and method of forming patterns using the composition

Also Published As

Publication number Publication date
EP2326744A4 (en) 2017-02-08
US8802346B2 (en) 2014-08-12
TW201012880A (en) 2010-04-01
TWI547528B (zh) 2016-09-01
US20110184139A1 (en) 2011-07-28
WO2010059174A1 (en) 2010-05-27
EP2326744A1 (en) 2011-06-01
JP2011530652A (ja) 2011-12-22
EP2326744B1 (en) 2022-06-01

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