TWI508198B - 形成用於具有預塗保護層的封裝晶粒的互連結構之半導體裝置與方法 - Google Patents

形成用於具有預塗保護層的封裝晶粒的互連結構之半導體裝置與方法 Download PDF

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Publication number
TWI508198B
TWI508198B TW097139670A TW97139670A TWI508198B TW I508198 B TWI508198 B TW I508198B TW 097139670 A TW097139670 A TW 097139670A TW 97139670 A TW97139670 A TW 97139670A TW I508198 B TWI508198 B TW I508198B
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Taiwan
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layer
protective layer
semiconductor
semiconductor die
insulating layer
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TW097139670A
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English (en)
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TW200926323A (en
Inventor
Il Kwon Shim
Yaojian Lin
Seng Guan Chow
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Stats Chippac Ltd
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Publication of TW200926323A publication Critical patent/TW200926323A/zh
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Publication of TWI508198B publication Critical patent/TWI508198B/zh

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Description

形成用於具有預塗保護層的封裝晶粒的互連結構之半導體裝置與方法
本發明一般而言是關於半導體裝置，更精確地說，是與具有互連接構的晶圓級晶片規模封裝(WLCSP)有關；其中半導體晶粒已從半導體晶圓備妥，半導體晶圓具有在晶圓正面或主動側上的保護層。
在娛樂、通訊、網路、電腦、家用市場各領域的許多產品中可發現半導體裝置。半導體裝置也可見於軍事、航空、汽車、工業管理、以及辦公設備中。半導體裝置執行在各種該等應用中所需的多樣化電性功能。
半導體裝置的製造涉及具有複數個晶粒的晶圓之形成。每個半導體晶粒均含有數百或數千個電晶體及其他主動與被動元件，用以執行多種電性功能。針對特定晶圓，該晶圓的每個晶粒通常會執行相同的電性功能。前端製造通常是指在晶圓上半導體裝置之形成。已完成的晶圓會具有包含電晶體及其他主動與被動構件的主動側。後端製造則是指將已完成晶圓切割或單一化成個別晶粒，然後封裝晶粒以達結構性支撐與環境隔絕的目的。
半導體製造的目標之一是以較低成本生產適合更快、可靠、更小、並且更高密度積體電路(IC；integrated circuit)的封裝。覆晶封裝或晶圓級封裝(WLP；wafer level package)極適合要求高速度、高密度、以及更多插針數的IC。覆晶 型封裝涉及將晶粒的主動側面朝下架置於晶片載體基板或印刷電路板(PCB；printed circuit board)處。介於晶粒上之主動裝置與在載體基板上之導體線路間的電性或機械互連是透過焊接凸塊結構達成，該焊接凸塊結構包含大量的導體焊接凸塊或焊球。焊接凸塊藉由對沉積於被設置在半導體基板之接觸墊片上的焊劑材料套用回焊製程所構成。焊接凸塊接著被焊合至載體基板。覆晶半導體封裝提供了從晶粒上之主動裝置至載體基板的短距導電路徑，以縮短訊號傳播長度、降低電容、並且達到整體較佳的電路效能。
在半導體封裝中，運用讓半導體晶粒主動面在密封後露出的製程，藉由模製材料密封半導體晶粒。互連建立層(其包含介電層、金屬重分佈層、以及凸塊下冶金層(under bump metallurgy layer)配置於晶片主動面與模製材料上。焊接凸塊或其他電性互連接著形成在互連建立層上，使得半導體晶粒能夠與外部裝置電性連接。
半導體晶粒的密封包含使用晶粒面朝下配置的基板，並且允許模製化合物流動於未塗覆主動面的晶粒周圍與上方。在半導體封裝的結果中，模製材料在半導體晶粒上比起周圍區域是較薄的。由於模製材料與半導體晶粒兩者間的熱膨脹係數(CTE；coefficients of thermal expansion)不同，因此，半導體晶粒與模製化合物之間可能發生脫層。
CTE的不協調也可能會破壞焊接凸塊連接至互連建立層的區域。由於焊接點的小尺寸及作用於相對它們熔點的高溫因此焊接點成為半導體封裝的易碎元件。可能因為各 種原因而發生焊接點故障。其中一類循環壓力應用所引起的故障，其主要來自溫度擺盪及焊接點與應用面板之個別CTE。由於焊接點故障可能起因於標準每日排程中，例如啟動或關閉電子設備，焊接點的可靠度因此在WLCSP的製造中變得重要。
在WLCSP的問題上，解決焊接點故障及因晶粒與安裝板或互連建立層之間的CTE不協調造成之中間互連建立層脫層需求仍存在。
在一個具體實施例中，本發明是一種製造半導體裝置的方法，其包含的步驟有提供以導電材料製成的載體；在載體上形成接觸墊片；在半導體晶圓的主動面上形成預塗保護層；從半導體晶圓移除具有預塗保護層的半導體晶粒；架置具有預塗保護層的半導體晶粒於載體上；於載體上密封半導體晶粒及接觸墊片；移除載體；在預塗保護層與接觸墊片之上形成第一絕緣層；於第一絕緣層與預塗保護層中形成通孔，以在半導體晶粒上顯露出互連部位；並且在第一絕緣層上形成互連結構，該互連結構與在半導體晶粒及接觸墊片上的互連部位電性連接。
在另一個具體實施例中，本發明是一種製造半導體裝置的方法，其包含的步驟有提供載體；在載體上形成接觸墊片；並且架置半導體晶粒於載體上。該半導體晶粒具有在其主動面上的預塗保護層。此方法更進一步包含的步驟 有於載體上密封半導體晶粒與接觸墊片；移除載體；在預塗保護層與接觸墊片之上形成第一絕緣層；於第一絕緣層與預塗保護層中形成通孔，以在半導體晶粒上顯露出互連部位；並且在絕緣層上形成互連結構，該互連結構與在半導體晶粒及接觸墊片上的互連部位電性連接。
在另一個具體實施例中，本發明是一種製造半導體裝置的方法，其包含的步驟有提供載體；在載體上形成接觸墊片；架置半導體晶粒在載體上。該半導體晶粒具有保護層在其主動面上。此方法更進一步包含的步驟有於具有模製化合物的載體上密封半導體晶粒與接觸墊片；移除載體；於保護層中形成通孔以在半導體晶粒上顯露出互連部位；並且在保護層上形成互連結構，該互連結構與在半導體晶粒及接觸墊片上的互連部位電性連接。
在另一個具體實施例中，本發明是一種半導體裝置，包含具有保護層的半導體晶粒，該保護層形成在其主動層上。密封物形成在半導體晶粒上。第一絕緣層形成在保護層上。互連結構形成在保護層上，該互連結構與在半導體晶粒上的互連部位電性連接。
本發明會參考圖式在下面實施方式的一或多個具體實施例中作說明，其中相同的符號代表相同或雷同的元件。雖然本文以達成本發明目的之最佳模式來說明本發明，不過熟習該項技術人士便會明白，本文希望涵蓋可能包含在 受到下面揭露內容與圖式所支撐的隨附申請專利範圍及它們等效範圍所界定之本發明的精神與範疇內的替代例、修正例、以及等效例。
半導體裝置的製造涉及形成具有複數晶粒的晶圓。每個晶粒均含有數百或數千個電晶體及其他主動與被動元件，用以實施一或多種電性功能。針對特定晶圓，該晶圓的每個晶粒通常會實施相同的電性功能。前端製造通常涉指在晶圓上形成半導體裝置。已完成的晶圓會具有包含電晶體及其他主動與被動構件的主動側。後端製造則是指將已完成晶圓切割或單一化成個別晶粒，然後封裝該晶粒以達結構性支撐及/或環境隔絕的目的。
半導體晶圓通常包含：主動面，其上放置半導體裝置；以及背側面，其運用大量的半導體材料(舉例來說，矽)所形成。主動面含有複數半導體晶粒。主動面由多種半導體製程所構成，其包含：分層處理、圖案化處理、摻雜處理、以及熱處理。在分層製程中，藉由各種技術在基板上增生或沉積半導體材料，該等技術涉及：熱氧化、氮化、化學氣相沉積、蒸鍍、以及濺鍍。光微影術涉及表面區域的遮罩及蝕除非所希的材料，以便形成特定結構。摻雜製程則藉由熱擴散或離子植入來注入各種濃度的摻雜材料。
覆晶半導體封裝及晶圓級封裝(WLP)通常用於需要高速、高密度、及更多插針數的積體電路(IC)。覆晶型半導體裝置10涉及將晶粒14的主動區12面朝下架置於晶片載體基板或印刷電路板(PCB)16處，如圖1所示。根 據晶粒的電性設計，主動區12包含有主動與被動裝置、導體層、以及介電層。電性與機械互連是透過包含大量個別導體焊接凸塊或焊球22的焊接凸塊結構20來達成。焊接凸塊形成在凸塊墊片或互連部位24上，該凸塊墊片或互連部位被沉積在主動區12之上。凸塊墊片24藉由主動區12中的導體線路連接至主動電路。焊接凸塊22則藉由回焊製程被電性或機械連接至載體基板16上的接觸墊片或互連部位26。覆晶半導體裝置提供了從晶粒14上之主動裝置至載體基板16上之導體線路的短距導電路徑，以縮短訊號傳播長度、降低電容、並且達到整體較佳的電路效能。
圖2a到2i闡述製造具有互連結構之晶圓級晶片規模封裝(WLCSP)的方法，其中半導體晶粒是由晶圓的主動側上具預塗保護層之半導體晶圓所製成。在圖2a中，金屬載體40顯示具有施加至該金屬載體40頂表面的光阻層42。金屬載體40由銅(Cu)、鋁(Al)、或其他導電金屬所構成。載體40充當支撐構件用以在製程期間固持半導體晶粒及電鍍金屬墊片於適當處。在後續電鍍製程期間，金屬載體40也當作電鍍電流路徑，用以於載體上形成電鍍金屬墊片。
在圖2b中，複數的開口或通孔運用光圖案化製程(例如紫外線(UV)曝光及顯影)製成於光阻層42中。開口界定用以選擇性鍍製的區域，還可以策略性配置，使該區域於鍍製時能充當基準標記、互連接觸墊片、及割鋸對準標記。金屬接觸墊片44運用電鍍製程沉積於開口中以及金屬 載體40上。接觸墊片44可能由無電鍍鎳/浸金(Ni/Au)或其他具有低電阻的金屬或合金所構成。一旦接觸墊片44沉積，光阻層42便透過UV或熱固化自金屬載體40剝離，如圖2c所示。
在製程另個部分中，保護層預塗至包含複數個半導體晶粒的半導體晶圓之主動面。該保護層是以旋轉塗佈或網版印刷塗覆的薄片或塗料膠黏劑。保護體層是絕緣體並可在低於200百萬帕壓力下藉由具低熱膨脹係數(CTE)(例如百萬分之20(ppm)/攝氏度或更低)的聚亞醯胺(PI)薄膜或低模數的矽基橡膠所構成。
通孔或開口能夠以雷射鑽孔或深反應離子蝕刻(DRIE)形成於半導體晶圓的主動面中。假如施加的是感光膠黏劑，也可以形成光通孔。晶圓會將保護層向下置於分切膠帶處並以分切刀分割。取放器械移除具有預塗保護層之個別晶粒，然後再將該晶粒置於金屬載體40上。
圖2d闡述具有預塗保護層46的半導體晶粒48面朝下架置於金屬載體40處。保護層46可用作為晶粒黏著材料。互連部位50透過在晶粒內形成的導體線路或膜層而與半導體晶粒48上的主動與被動裝置電性連接。傳導材料可能為Al、Cu、錫(Sn)、鎳(Ni)、金(Au)、或銀(Ag)。
在一個具體實施例中，金屬載體40擁有一或多個具電極54的被動構件52，其電性連接至具有導電膠黏劑56的金屬墊片44。被動構件52可包含電阻器、電容器、電感器、變壓器、電壓源、電流源、或其他類似裝置。
在圖2e中，圖2d中形成的結構被以聚合模製化合物58向下密封至金屬載體40處。模製化合物為非傳導性並環境地保護半導體裝置免於外部元件及汙染物的損害。模製化合物58可能由環氧丙烯酸酯或其他聚合材料構成並且以轉移成型(transfer molding)、液態密封物模製(liquid encapsulant molding)、或其他模製製程而施加。
載體40以蝕刻製程移除，讓半導體晶粒48的保護層46與金屬墊片44顯露出來。隨著移除金屬載體40，模製化合物58提供半導體裝置牢固的支撐。
在圖2f中，半導體封裝上下翻轉使得互連部位50及半導體晶粒48之主動面朝向上。絕緣層63施加至接觸墊片44、保護層46、以及模製化合物58。絕緣層63由具有低硬化溫度(例如低於200攝氏度)的介電或感光聚合材料所構成。加工載體62運用膠黏層60施加至模製化合物58的表面(相對於保護層46)。載體62有助於在後續互連建立製程中的處理。
在圖2g中，部分的絕緣層63與保護層46被移除以形成開口並顯露出接觸墊片44與互連部位50。假設絕緣層63與保護體層46具感光性，便可以運用光圖案化製程形成開口。又或者，如果保護層46並非感光性，開口仍可藉由雷射鑽孔或DRIE製程而形成。
金屬化重分佈層(RDL)64藉由沉積金屬薄層於絕緣層63及保護層46的表面上而形成。複合金屬層通常需要滿足金屬化RDL的各種功能性需求，例如黏著、阻障、導 體、及保護。如前所述，RDL 64可藉由Al、鈦(Ti)、以及鎢化鈦(TiW)的層構成。RDL 64提供金屬墊片44與互連部位50還有後續層數之間的電性接觸。
在圖2h中，絕緣層66於絕緣層63與RDL 64上形成。絕緣層66由具有低硬化溫度(例如低於200℃)的介電或感光聚合材料所構成。運用光圖案化製程(例如UV曝光及顯影)移除部分的絕緣層66，以顯露出RDL 64。絕緣層63及66與RDL 64組成至少一部份的互連建立層。額外的感光絕緣層、金屬化RDL、及其他傳導層可隨需要而增加用以擴充互連建立層，以滿足為達半導體晶粒48功能性設計的互連需求。
互連接觸墊片(已知如凸塊下金屬化層(UBM)68)被沉積並圖案化，用以電性接觸RDL 64。UBM 68對半導體封裝提供了多樣優勢：(1)介於互連部位50與後續電性互連之間的介面，(2)保護互連部位免於環境損害，(3)介於互連部位50與後續電性互連之間的低電阻性接觸，(4)阻障焊劑擴散進到金屬墊片裡，(5)針對焊劑濕潤性的晶種層。UBM 68藉由以濺鍍形成金屬連續層所構成，各層具不同功能。該等層數可能包含膠黏層、擴散層、焊接濕性層、以及保護層。
在圖2i中，焊接凸塊70形成在UBM 68上。焊接凸塊70讓互連部位50及具有其他電性裝置之金屬墊片44電性連接。焊接凸塊70可能透過蒸鍍、電鍍、無電鍍、球滴(ball drop)、或網版印刷製程而沉積，並且由任一金屬或導電材 料(例如Sn、鉛(Pb)、Ni、Au、Ag、Cu、輝鉍礦(Bi)及其合金)所形成。焊接凸塊70代表其中一類的電性互連結構。最後，載體62在接合焊接凸塊70後或是晶圓單一化切割後移除。
圖3a與3b闡述在圖2a到2i中所製成之WLCSP的替代具體實施例。如前述之半導體封裝，具有光阻層的金屬載體被用作為支撐構件。開口製成於光阻層中用以界定金屬墊片44所沉積的區域，且一旦該金屬墊片沉積後光阻層便會被剝離。
在圖3a中，通孔72在保護層46中預先成形，用以顯露互連部位50。半導體晶粒48以面朝下狀態架置於金屬載體處並連同被動構件52一併以模製化合物58密封。金屬載體自半導體裝置剝除，然後絕緣層63形成在接觸墊片44及保護層46上。通孔74(圖3b所示)運用光圖案化製程(例如UV曝光及顯影)製成於絕緣層63中，將通孔74與保護層46中的通孔72直接連接。絕緣層63中的通孔74通常跟保護層46中的通孔72同尺寸或是較大。通孔74與通孔72對齊以顯露出互連部位50。如先前具體實施例，金屬化RDL與附加絕緣層會隨互連建立製程的需要而形成，而最終形成電性互連，參考圖2g－2i。
圖4闡述半導體封裝的另一個具體實施例。具有光阻層的金屬載體被用作為支撐構件。開口製成於光阻層中用以界定金屬墊片44所沉積的區域，且一旦該金屬墊片沉積後光阻層便會被剝離。半導體晶粒48(其表面上具有預塗 保護層46)面朝下施加至金屬載體。半導體晶粒48可能根據情況而具有類似於圖3a到3b中所闡述具體實施例之預先成形的通孔。半導體晶粒48連同被動構件52一併以模製化合物58密封。緊接著，金屬載體自半導體裝置剝除。
如果半導體48不具有預先成形的通孔，通孔便會在保護層46中形成。不同於先前具體實施例，圖4顯示RDL 76運用化學氣相沉積(CVD)、物理氣相沉積(PVD)、及/或鍍覆製程而直接施加至保護層46、模封化合物58、及接觸墊片46的表面。絕緣層63並未用於此具體實施例中。RDL 76可藉由Al、Ti、TiW、或其他金屬所構成。絕緣層84施加至RDL 76，且形成通孔、顯露出RDL 76。還可鍍覆UBM 78以形成最後的金屬墊片區域。焊接凸塊80形成在UBM 78上。
在圖5中，第二金屬化RDL 86在絕緣層84上形成並且與RDL 76電性連接。絕緣層92形成於RDL 86及絕緣層84之上。絕緣層92由具有低硬化溫度(例如低於200℃)的介電或感光聚合材料所構成。通孔在絕緣層92中形成，用以顯露部分RDL 86。視情況而定，還可鍍覆UBM 88，以形成最後的金屬墊片區域。焊接凸塊90形成在UBM 88上。
在圖6a與6b中，開口製成於已施加至金屬載體之光阻層中。開口界定金屬墊片44所沉積的區域，而一旦該金屬墊片沉積後光阻層便會被剝離。半導體晶粒48(其具有視情況而預先成形的通孔於保護層46中)以面朝下狀態施加 至金屬載體。半導體晶粒48連同被動構件52一併以模製化合物58密封。金屬載體自半導體裝置剝除，然後絕緣層63施加至接觸墊片44及保護層46。如果保護層46不具有預先成形的通孔，通孔便會在絕緣層63及保護層46中形成。
如圖6a中所示，金屬RDL 104形成在絕緣層63及保護層46之上。第二感光絕緣層100施加至絕緣層63上方，覆蓋RDL 104。通孔於絕緣層100中形成。附加感光絕緣層與金屬RDL可能會隨需要而增加，用以形成互連建立層。此外，視情況UBM 102可鍍覆於絕緣層100中。
臨時載體108運用膠黏層106施加至模製化合物58底側。臨時載體108可由剛性材料或柔性膠帶所構成並且有助於形成在模製化合物58頂表面的互連建立製程。通孔或開口運用雷射鑽孔或DRIE製程穿透模製化合物58而形成，用以顯露出金屬墊片44。另一個金屬化RDL 110形成在模製化合物58頂表面及模製化合物58中構成的通孔上。絕緣層112施加於RDL 110之上。絕緣層112由具有低硬化溫度(例如低於200℃)的介電或感光聚合材料所構成。接著，通孔或開口於絕緣層112中製成，顯露部份RDL 110。最後在圖6b中，加工載體108被解除，然後焊接凸塊114形成在UBM 102上。視情況而定，還可鍍覆UBM，以在絕緣層112中形成最終的金屬墊片區域。
雖然本文已經詳細說明本發明的一或多個具體實施例，不過熟習本技術人士便會明白，仍可在不脫離後面申 請專利範圍中所提出的本發明範疇內對該等具體實施例進行修正與改變。
10‧‧‧覆晶型半導體裝置
12‧‧‧主動區
14‧‧‧晶粒
16‧‧‧印刷電路板
20‧‧‧結構
22‧‧‧焊接凸塊或焊球
24‧‧‧墊片
26‧‧‧互連部位
40‧‧‧金屬載體
42‧‧‧光阻層
44‧‧‧接觸墊片
46‧‧‧保護層
48‧‧‧半導體晶粒
50‧‧‧互連部位
52‧‧‧被動構件
54‧‧‧電極
56‧‧‧膠黏劑
58‧‧‧模製化合物
60‧‧‧膠黏層
62‧‧‧載體
63‧‧‧絕緣層
64‧‧‧重分佈層
66‧‧‧絕緣層
68‧‧‧凸塊下金屬化層
70‧‧‧焊接凸塊
72‧‧‧通孔
74‧‧‧通孔
76‧‧‧RDL
78‧‧‧UBM
80‧‧‧焊接凸塊
84‧‧‧絕緣層
86‧‧‧RDL
88‧‧‧UBM
90‧‧‧焊接凸塊
92‧‧‧絕緣層
100‧‧‧絕緣層
102‧‧‧UBM
104‧‧‧RDL
106‧‧‧膠黏層
108‧‧‧載體
110‧‧‧RDL
112‧‧‧絕緣層
114‧‧‧焊接凸塊
圖1為具有焊接凸塊的覆晶半導體裝置，其提供介於晶粒主動區與晶片載體基板之間的電性互連焊接凸塊；圖2a到2i闡述製造具有互連建立層之WLCSP的方法；圖3a與3b闡述製造圖2a到2i中WLCSP的替代具體實施例；圖4闡述WLCSP的具體實施例，其中直接塗覆重分佈層至半導體晶粒之模製化合物與保護層；圖5闡述圖4的具體實施例，其中已添加額外金屬重分佈層與絕緣層；並且圖6a到6b闡述形成於半導體封裝之模製化合物中的重分佈層。
44‧‧‧接觸墊片
46‧‧‧保護層
48‧‧‧半導體晶粒
50‧‧‧互連部位
52‧‧‧被動構件
54‧‧‧電極
56‧‧‧膠黏劑
58‧‧‧模製化合物
63‧‧‧絕緣層
64‧‧‧重分佈層
66‧‧‧絕緣層
68‧‧‧凸塊下金屬化層
70‧‧‧焊接凸塊

Claims (15)

  1. 一種製造半導體裝置的方法，包含：提供接觸墊片；配置半導體晶粒，該半導體晶粒具有預塗保護層在其鄰近於該接觸墊片的主動面上，其中該預塗保護層的覆蓋面積不大於該半導體晶粒的覆蓋面積；於半導體晶粒與接觸墊片之上沉積密封物；在預塗保護層與接觸墊片之上形成第一絕緣層；於第一絕緣層與預塗保護層中形成通孔，以在半導體晶粒上顯露出互連部位；並且在第一絕緣層上形成互連結構，該互連結構與在半導體晶粒及接觸墊片上的互連部位電性連接。
  2. 如申請專利範圍第1項之方法，其中提供半導體晶粒更進一步的包含：提供半導體晶圓；在該半導體晶圓的主動面上形成保護層；並且從半導體晶圓移除具有預塗保護層的半導體晶粒。
  3. 如申請專利範圍第1項之方法，更進一步的包含：在第一絕緣層之上形成重分佈層；在重分佈層之上形成第二絕緣層；並且在第二絕緣層上形成凸塊下金屬化層，該凸塊下金屬化層與重分佈層電性連接。
  4. 如申請專利範圍第1項之方法，更進一步的包含：於預塗保護層中形成第一通孔；並且 於第一絕緣層中形成第二通孔，該第二通孔與預塗保護層中的第一通孔對齊以顯露出互連部位。
  5. 如申請專利範圍第1項之方法，更進一步的包含配置被動構件在接觸墊片之上。
  6. 一種製造半導體裝置的方法，包含：提供半導體晶粒，該半導體晶粒具有保護層在其主動面上，其中該保護層的覆蓋面積不大於該半導體晶粒的覆蓋面積；於半導體晶粒上沉積密封物；於該保護層上形成第一絕緣層；並且在保護層上形成互連結構，該互連結構與在半導體晶粒上的互連部位電性連接。
  7. 如申請專利範圍第6項之方法，其中提供半導體晶粒更進一步的包含：提供半導體晶圓；在該半導體晶圓的主動面上形成保護層；從半導體晶圓移除具有保護層的半導體晶粒。
  8. 如申請專利範圍第6項之方法，更進一步的包含：在第一絕緣層之上形成重分佈層；在重分佈層之上形成第二絕緣層；並且在第二絕緣層上形成凸塊下金屬化層，該凸塊下金屬化層與重分佈層電性連接。
  9. 如申請專利範圍第6項之方法，更進一步的包含：於保護層中形成第一通孔；並且 於第一絕緣層中形成第二通孔，該第二通孔與保護層中的第一通孔對齊以顯露出互連部位。
  10. 如申請專利範圍第6項之方法，更進一步的包含鄰近於該半導體晶粒配置被動構件。
  11. 如申請專利範圍第8項之方法，更進一步的包含在凸塊下金屬化層形成焊接凸塊。
  12. 一種半導體裝置，包含：具有保護層的半導體晶粒，該保護層形成在其主動面上，其中該保護層的覆蓋面積不大於該半導體晶粒的覆蓋面積；密封物，其形成在半導體晶粒上；第一絕緣層，其形成在保護層上；並且互連結構，其形成在保護層上，該互連結構與在半導體晶粒上的互連部位電性連接。
  13. 如申請專利範圍第12項之半導體裝置，其中互連結構包含：重分佈層，其形成在第一絕緣層之上；第二絕緣層，其形成在重分佈層之上；並且凸塊下金屬化層，其形成在第二絕緣層上，該凸塊下金屬化層與重分佈層電性連接。
  14. 如申請專利範圍第12項之半導體裝置，更進一步的包含：第一通孔，其形成於保護層中；並且第二通孔，其形成於第一絕緣層中，該第二通孔與保 護層中的第一通孔對齊以顯露出互連部位。
  15. 如申請專利範圍第13項之半導體裝置，更進一步的包含形成在凸塊下金屬化層的焊接凸塊。
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