TWI506161B - 使用具有往復式基座的沈積裝置之層沈積法 - Google Patents
使用具有往復式基座的沈積裝置之層沈積法 Download PDFInfo
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Description
本發明係關於使用原子層沈積(ALD)在基板上沈積一或多層材料。
本申請案根據35 U.S.C. §119(e)主張共同待審的於2010年10月18日申請之美國臨時專利申請案第61/394,275號之優先權,其以引用全文之方式併入本文中。
原子層沈積(ALD)係用於在基板上沈積一或多層材料之薄膜沈積技術。ALD使用兩種化學品,一種為源前體且另一種為反應物前體。一般而言,ALD包括四個階段:(i)注入源前體,(ii)移除該源前體之物理吸附層,(iii)注入反應物前體,及(iv)移除該反應物前體之物理吸附層。ALD為在獲得期望厚度層之前可能需要延長時間量或許多重複的緩慢製程。因此,為加快該製程,可使用具有單元模組(所謂的線性注射器)的蒸氣沈積反應器(如美國專利申請公開案第2009/0165715號中描述)或其他類似裝置以加快ALD製程。該單元模組包括針對源材料之注射單元及排氣單元(源模組)及針對反應物之注射單元及排氣單元(反應物模組)。
習知的ALD蒸氣沈積室具有一或多組反應器用於在基板上沈積ALD層。當該基板在該等反應器下方通過時,該基板暴露於該源前體、淨化氣體及該反應物前體。沈積在該基板上的源前體分子與反應物前體分子反應,或該等源前體分子經該等反應物前體分子置換而在該基板上沈積材料層。在使該基板暴露於該源前體或該反應物前體後,可使該基板暴露於該淨化氣體,以自該基板移除過量的源前體分子或反應物前體分子。
實施例係關於藉由在兩個相反方向上引起該基板與反應器之間的相對運動而在基板上沈積一或多層材料。當該基板通過該等反應器時,該等反應器注入氣體或自由基至該基板上。當該基板及該等反應器在第一方向上產生相對運動時,藉由在該基板上至少注入前體氣體及反應物氣體而在該基板上沈積至少一個原子層。當該基板及該等反應器在與第一方向相反的第二方向上產生相對運動時,藉由該等反應器對該基板之表面進行退火處理。
在一項實施例中,將該基座及該等反應器在第一方向及第二方向上的相對運動重複預定次數。以此方式,可獲得所需厚度的層。
在一項實施例中,使惰性氣體之自由基注入至該基板上以處理該基板之表面。在將該等惰性氣體之自由基注入至該基板上後,將源前體注入至該基板上。使該基板之表面暴露於該等惰性氣體之自由基增加該等源前體分子在該基板表面上之吸收速率,有利地導致該層之沈積速率增加。該惰性氣體可包含氬氣。
在一項實施例中,該前驅氣體包括三甲基鋁。該反應物氣體包括氧自由基。該沈積層為Al2
O3
。
實施例係參照附圖描述於文中。然而,本文所揭示原理可以許多不同形式具體實施,且不應將其解釋為受限於本文所提出的實施例。在說明書中,可省略熟知特徵及技術的細節以避免不必要地模糊該等實施例之特徵。
在該等圖中,圖中的類似參考數字指示類似元件。為清楚起見,可放大該圖之形狀、大小及區域等。
實施例係關於藉由使基座在兩個相反方向上往復運動,使該基座上的基板經歷兩個不同的處理順序而進行原子層沈積。當該基板在一個方向上移動時,藉由反應器對該基板注入一系列氣體及/或自由基。該基板在兩個方向上的往復式運動使該基板經歷兩個不同的處理順序。經由使該基座經歷兩個不同的處理順序,該基板可經歷一或多個原本將需要另外一組反應器的處理。減少數量的反應器使得沈積裝置更緊湊,且減少與該沈積裝置相關之成本。
圖1為依據一實施例之線性沈積裝置100之橫截面圖。圖2為依據一實施例之線性沈積裝置100之透視圖(無室壁110以便於說明)。該線性沈積裝置100尤其可包括支撐柱118、處理室110及一或多個反應器136。該等反應器136可包括一或多個注射器及自由基反應器。每一該注射器模組注入源前體、反應物前體、淨化氣體或此等材料之組合至該基板120上。
由該等壁110封閉之處理室可維持在真空狀態,以防止污染物影響沈積過程。該處理室110包含接收基板120之基座128。該基座128係置於支撐板124上以進行滑動運動。該支撐板124可包括控制該基板120之溫度的溫度控制器(例如,加熱器或冷卻器)。該線性沈積裝置100亦可包括頂銷(參見下圖4A、4B及4F)以助於加載該基板120至該基座128上或自該基座128拆卸該基板120。
在一實施例中,該基座128係固定於托架210,其通過其上形成的螺絲橫越過延伸桿138移動。該等托架210具有在其等接收該延伸桿138之孔內形成之對應螺絲。該延伸桿138係固定於馬達114之轉軸上,且因此,該延伸桿138隨著該馬達114之轉軸的旋轉而旋轉。該延伸桿138之旋轉引起該等托架210(及因此該基座128)在該支撐板124上作線性運動。藉由控制該馬達114之速度及旋轉方向,可控制該基座128之線性運動的速度及方向。馬達114及該延伸桿138之應用僅為用於移動該基座128之機制的一實例。還有多種其他移動該基座128之方式(例如,在該基座128之底部、頂部或邊上使用齒輪及小齒輪)。另外,代替移動該基座128,可使該基座128保持固定並可移動該等反應器136。
圖3A為依據一實施例之旋轉沈積裝置300之透視圖。代替使用圖1之線性沈積裝置100,可依據另一實施例使用該旋轉沈積裝置300來進行該沈積製程。該旋轉沈積裝置300尤其可包括反應器320、334、364、368、基座318及封閉此等組件的容器324。該基座318將該等基板314固定於定位。該等反應器320、334、364、368係置於該基板314及該基座318上方。該基座318或該等反應器320、334、364、368旋轉,以使該等基板314接受不同處理。
使一或多個該等反應器320、334、364、368連接至氣體管(未顯示),以提供源前體、反應器前體、淨化氣體及/或其他材料。該等由該等氣體管提供之材料可(i)藉由該等反應器320、334、364、368直接注入至該等基板314上,(ii)接著於該等反應器320、334、364、368內之室中混合,或(iii)接著藉由在該等反應器320、334、364、368中產生的電漿轉換成自由基。在該等材料皆注入至該基板314上後,多餘的材料可通過出口330、338排出。
本文所述之實施例可用於該線性沈積裝置100、該旋轉沈積裝置300或其他類型之沈積裝置中。以該線性沈積裝置100及該旋轉沈積裝置300為例,可藉由使該基板120(或314)先在一個方向及隨後在相反方向上相對於該等反應器移動,而使該基板120(或314)經受不同的處理順序。
圖3B為說明依據一實施例之反應器351的圖示。該反應器351可用於該線性沈積裝置100或該旋轉沈積裝置300中。該反應器351尤其可包括注射器370及自由基反應器374。如圖所示,該注射器370係高起於該基板314高度H1,且該自由基反應器374係高起於該基板314高度H2,以提供足夠的空隙供該基板314在該注射器370及該自由基反應器374下方通過。
該注射器370經由管364接收氣體並經由在該注射器370中形成的通道372及孔373將該氣體注入至其室384中。經由該注射器374注入的氣體可為源前體、反應物前體、淨化氣體或用於任何其他目的的氣體。在該室384內,該氣體接著與該基板314接觸並執行作為前體或淨化氣體之功能。殘餘的氣體經由壓縮區386(具有高度H2)排出至出口371。在該壓縮區386中,該氣體流動速度增加,有利於自該基板314之表面移除多餘氣體。
該自由基反應器374經由管366接收氣體。該氣體被注入至內電極376與外電極378之間的空腔380中。穿過該內電極376及該外電極378施加電壓,使得當該氣體被注入至該空室380內時,該氣體之電漿在該空腔380中產生自由基。接著使該等氣體之自由基經由孔洞382注入至室390中,在此該等自由基與該基板314接觸。自由基經恢復至非活性態,而且一些多餘的自由基通過壓縮區388(具有高度H3)並經由該出口371排出。
圖3B之反應器為說明性。可將多種其他類型的反應器用於該線性沈積裝置100或旋轉沈積裝置300中。在替代性實施例中,該等反應器可僅包括注射器、僅包括自由基反應器、包括超過兩個注射器及自由基反應器或不同順序的自由基反應器/注射器。
圖4A至4G為說明依據一實施例在基板124上沈積一或多層材料之處理順序的概念圖。首先使頂銷410上升以接收基板120(參見圖4A)。隨後,藉由將該基板120置於該頂銷410上(參見圖4B)並接著降低該頂銷410(參見圖4C),而使該基板120加載於該基座124上。
接著使該基座120移動穿過該等反應器130,以使該基板120接受第一處理順序(參見圖4D)。接著轉變該基座之移動方向,且該基座於相反方向移動以使該基板120接受第二處理順序(參見圖4E)。該第二處理順序為第一處理順序之逆轉順序。取決於該沈積層之厚度或該沈積層之所需特徵,可使該第一及第二處理順序重複預定次數。
在重複預定次數之該第一及第二順序後,利用該頂銷410自該基座提升該基板120(參見圖4F)並自該基座移除(參見圖4G)。
圖5為說明依據一實施例在基板上沈積一或多層材料之方法的流程圖。首先,將該基板安裝510在該基座上。使該基座(帶有基板)在一個方向上移動520穿過一或多個反應器,以使該基板接受第一處理順序。接著使該基座於相反方向上移動530穿過同一組反應器,以使該基板接受第二處理順序。當該基座於兩方向上但在不同順序中移動時,該等反應器可注入相同氣體及/或自由基。
接著判定540是否滿足終止該處理的條件(例如,達到預定之層厚度或重複預定次數之處理)。若尚未滿足該終止條件,則該製程返回至在一個方向上移動520該基座並重複該後續過程。若已滿足該終止條件,則該製程繼續進行至自該基座卸下550該基板。
本文參照圖6A至9B描述藉由不同方法處理基板之實例。圖6A之沈積裝置包括用於在基板620上沈積Al2
O3
層的第一單元602及第二單元614。該第一單元602包括三個注射模組615、622、634及一個自由基反應器626。注射模組615注入TMA(三甲基鋁),且注射模組622、634注入氬氣。該自由基反應器626產生氧自由基(O*)並注入該等自由基至該基板620上。該第一單元602中任何多餘的氣體或電漿經由出口618及630排出。該第二單元614具有與該第一單元602相同的結構。即,該第二單元614包括三個注入模組638、648、660及一個自由基反應器652。注射模組638注入TMA,且注射模組648、660注入Ar氣體。該第二單元614中任何多餘的氣體或電漿經由出口644及656排出。
在圖6A之實施例中,基板620自左邊移至右邊(在第一方向上),並接著自右至左(在第二方向上)。該基板620所暴露的材料及該處理順序說明於圖6B。當在該第一單元602下方於第一方向中移動時,該基板620先暴露於TMA(作為源前體)接著再暴露於Ar氣體(作為淨化氣體,以移除經物理吸附的多餘的TMA)。在經注入後,該Ar氣體穿過壓縮區621。當穿過該壓縮區621時,該Ar氣體之流動速度增加。該增加之Ar氣體流動速度有助於自該基板620之表面有效移除過量TMA(物理吸附的TMA)。
接著使該基板620暴露於O*(作為反應物前體)。該TMA與O*之間的反應形成Al2
O3
層。隨後注入的Ar氣體自該基板620之表面移除任何多餘的氣體。由於該第一單元602及該第二單元614具有相同結構且注入相同氣體或自由基,故當該基板620在該第一單元602及第二單元614下方通過時,該基板620經歷兩次相同的處理。
當該基板620在第二方向上移動時,該基板620首先暴露於氬氣(藉由注射器660)然後暴露於自由基O*(藉由自由基反應器652)。暴露於O*引起該基板620退火。接著使該基板620經過Ar氣體(藉由注射器648)然後TMA(藉由注射器638)處理。接著使該基板620注入Ar氣體(藉由注射器634)然後O*(藉由自由基反應器626)。該基板620之暴露於該TMA(藉由注射器638)及隨後暴露於O*(藉由自由基反應器626)導致在該基板620上形成Al2
O3
層(圖6B中顯示為虛線框)。因此,在第二方向上移動該基板620(自右至左)引起該基板620經歷由O*(由該自由基反應器652產生)引起的退火處理,接著再沈積Al2
O3
層。作為在第二方向上移動該基板620之最後步驟,該基板620藉由該注射器615暴露於TMA。
接著再次在第一方向上移動該基板620。當再次在第一方向上移動時,該基板620再次藉由該注射器615暴露於TMA。然而,此額外暴露於TMA可有利地確保該表面吸收TMA。此外,淨化多餘的TMA(藉由注射器622)移除過量的TMA,因此,使該基板620暴露於TMA兩次不會對在該基板620上形成之Al2
O3
層的品質產生不利影響。
該基板620可在第一方向及第二方向上往復運動預定次數以獲得所需厚度的Al2
O3
層。
應注意在第二方向上移動該基板620導致該基板620有利地經歷退火。若該基板620僅在第一方向上移動,則該基板620將不經受任何退火處理。反之,在該基板620上形成兩層Al2
O3
。藉由在第二方向上移動該基板620,無需提供任何另外的反應器即可表面處理該基板620。因此,無需與提供另外自由基反應器相關的附隨成本即可提高該沈積Al2
O3
層之特性。
依據一實施例,圖7A之沈積裝置包括用於在基板710上沈積Al2
O3
層的第一單元704及第二單元708。該第一單元704包括兩個注射模組712、720及兩個自由基反應器724、732。該注射器模組712注入TMA,且該注射器模組720注入Ar氣體。該自由基反應器724產生O*並注入該等自由基至該基板710上。該自由基反應器732產生氬自由基(Ar*)並將其等注入至該基板710上。該第一單元704中任何多餘的氣體或自由基經由出口716及728排出。該第二單元708具有與第一單元704相同之結構。即,該第二單元708包括兩個注射模組736、744及兩個自由基反應器748、756。該等自由基反應器748、756分別注入O*自由基及Ar*自由基至該基板710之表面上。該第二單元708中任何多餘的氣體或自由基經由出口740及752排出。
在圖7A之實施例中,該基板710自左邊移至右邊(在第一方向上),然後自右邊至左邊(在第二方向上)。該基板710所暴露的材料及其等處理順序說明於圖7B。當在該第一單元704下方於第一方向中移動時,該基板710先暴露於TMA(作為源前體),接著再藉由該注射器720暴露於Ar氣體(作為淨化氣體以移除多餘TMA)。接著該基板710藉由該自由基反應器724暴露於O*(作為反應物前體)。該TMA與O*之間的反應形成Al2
O3
層。隨後當在該第二單元708下方通過時,Ar*將該基板710之表面處理成更易吸收該源前體之狀態。該Al2
O3
層暴露於Ar*自由基係有利的,原因在於在後續處理中該層之表面吸引更多TMA分子。相較於該基板710未暴露於Ar*自由基之情況,暴露於Ar*自由基導致大約三倍之Al2
O3
層厚度(圖7B中以虛線橢圓顯示的「3 ALD」表明相較先前未暴露於Ar*時形成的ALD層,該形成ALD層之厚度係大約3倍)。
在暴露於Ar*(藉由該自由基反應器732)後,該基板710再次經注入TMA(藉由該注射器736)、氬氣(藉由該注射器744)、O*自由基(藉由該自由基反應器748)及Ar*自由基(藉由該自由基反應器756)。
當該基板710在第二方向上移動時,該基板710首先暴露於Ar*自由基(藉由該自由基反應器756)然後暴露於O*自由基(藉由該自由基反應器748)。暴露於O*自由基導致該基板710之退火。接著使該基板710經過Ar氣體(藉由該注射器744)然後TMA(藉由該注射器736)處理。接著對該基板710注入Ar電漿(藉由該自由基反應器732)然後O*自由基(藉由該自由基反應器724)。該基板710暴露於該TMA(藉由該注射器736)及隨後暴露於O*(藉由該自由基反應器732)導致在該基板710上形成Al2
O3
層(在圖7B中以虛線框顯示)。因此,在該第二方向上移動該基板710(自右至左)導致該基板710經歷由O*(由該自由基反應器748產生)進行的退火處理,接著再沈積Al2
O3
層。作為在第二方向上移動該基板710之最後步驟,該基板710藉由該注射器712暴露於TMA。
接著再次在第一方向上移動該基板710。當再次在第一方向上移動時,該基板710可藉由該注射器712再次暴露於TMA。然而,此額外暴露於TMA可有利地確保該表面充分地吸收TMA。此外,淨化多餘的TMA(藉由該注射器720)移除過量的TMA,因此,使該基板710暴露於TMA兩次不會對藉由暴露於O*在該基板710上形成的Al2
O3
層的品質產生不利影響。
類似於圖6A之實施例,圖7A之實施例無需另外的反應器即有利地經歷由O*引起的退火處理並經歷由於暴露於Ar*而增加的沈積速度。
在其他實施例中,可增加單元數目。例如,代替如在圖6A及7A之實施例中使用相同兩單元之沈積模組,可串聯設置三個或更多個單元之沈積模組以增加該基板之每次往復的沈積速率。
儘管圖6A及7A之實施例使用具有相同組態的模組單元,但每一模組單元在其他實施例中可具有不同的組態。圖8A為說明具有不同組態之第一單元804及第二單元808的反應器圖示。該第一單元804包括三個注射器812、820、834及一個用於沈積Al2
O3
層的自由基反應器824。該等注射器812、820、834分別注入TMA、Ar氣體及Ar氣體至該基板810上。提供出口816及830以自該第一單元804排出過量氣體或自由基。該第二單元808包括自由基反應器838及用於退火處理該基板810之注射器846。該第二單元808亦包括用於自該第二單元808排出過量氣體或自由基之出口842。
當該基板810在該第一單元804下方於第一方向(自左至右)移動時,該基板經歷如以上參照圖6A之第一單元602所述之相同系列的處理。因此,為了簡明起見,本文省略與該第一單元804相關之過程描述。在通過該第一單元804下方後,該基板810在該第二單元808下方移動。當該基板810通過該第二單元808下方時,該自由基反應器838注入O*至該基板810之表面,其使該基板810之表面退火。接著藉由該注射器846將Ar氣體注入至該基板810上,以自該基板810之表面移除多餘材料。
當該基板810在第二方向上移動時(自右至左),首先藉由該注射器846對該表面810注入Ar氣體,接著藉由該自由基反應器838注入O*。該第一單元804中的隨後處理係與圖6A之第一單元602中之處理相同,因此,為了簡明起見,本文省略與該第一單元804相關之過程描述。圖8B概述藉由該第一單元804及該第二單元808在該基板810上進行的處理。
應注意當在第二方向上移動時,該基板810經O*表面處理兩次。因此,在一個往復運動之循環中,該基板810經表面處理三次(一次在第一方向上移動時及兩次在第二方向上移動時)。該另外兩次的表面處理係無需增加任何注射器或自由基反應器即可完成,其減少了與增加組件相關之成本及複雜性。
圖9A為依據另一實施例之反應器配置。在此實施例中,提供兩單元之反應器:該第一單元904及該第二單元908。該第一單元904基本上係與圖6A之第一單元相同,因此,為了簡明起見,省略其詳細描述。該第二單元908包括兩個自由基反應器920及928。該自由基反應器920注入O*自由基至該基板910上。該自由基反應器928注入Ar*自由基至該基板910上。在該兩個自由基反應器920、928之間提供用於排出多餘氣體或自由基之出口924。圖8B概述注入至該基板910上的材料及在該基板910上進行的處理。應注意在每一個往復運動之循環中,在該基板910上形成單一的ALD層且進行退火處理五次。
儘管參照圖6A至9B描述的以上實施例係關於在基板上沈積Al2
O3
層,但同樣原理可適用於在基板上沈積不同材料。為改變沈積的材料,可改變源前體及反應物前體。
使用此等方法製造的基板可用於各種不同應用(諸如顯示裝置或其他電子裝置)中。依據該等應用,亦可使用各種不同類型的基板。實例的基板包括矽晶圓及玻璃。
儘管上面已針對數個實施例描述本發明,但可在本發明之範圍內進行各種不同變化。因此,本發明之揭示內容意欲為闡述性,而並不限制在以下申請專利範圍中說明之本發明範圍。
100...線性沈積裝置
110...室壁
114...馬達
118...支撐柱
120...基板
124...支撐板
128...基座
136...反應器
138...延伸桿
210...托架
300...旋轉沈積裝置
314...基板
318...基座
320...反應器
324...容器
330...出口
334...反應器
338...出口
351...反應器
364...反應器(圖3A);管(圖3B)
366...管
368...反應器
370...注射器
371...出口
372...通道
373...孔
374...自由基反應器
376...內電極
378...外電極
380...空腔
382...孔洞
384...室
386...壓縮區
388...壓縮區
390...室
410...頂銷
602...第一單元
614...第二單元;注射模組
618...出口
620...基板
621...壓縮區
622...注射模組
626...自由基反應器
630...出口
634...注射模組
638...注射模組
644...出口
648...注射模組
652...自由基反應器
656...出口
660...注射模組
704...第一單元
708...第二單元
710...基板
712...注射器模組
716...出口
720...注射器模組
724...自由基反應器
728...出口
732...自由基反應器
736...注射模組
740...出口
744...注射模組
748...自由基反應器
752...出口
756...自由基反應器
804...第一單元
808...第二單元
810...基板
812...注射器
816...出口
820...注射器
824...自由基反應器
830...出口
834...注射器
838...自由基反應器
842...出口
846...注射器
904...第一單元
908...第二單元
910...基板
920...自由基反應器
924...出口
928...自由基反應器
圖1為依據一實施例之線性沈積裝置之橫截面圖。
圖2為依據一實施例之線性沈積裝置之透視圖。
圖3A為依據一實施例之旋轉沈積裝置之透視圖。
圖3B為說明依據一實施例之反應器之圖示。
圖4A至4G為說明依據一實施例在基板上沈積一或多層材料之處理順序的概念圖。
圖5為說明依據一實施例在基板上沈積一或多層之製程的流程圖。
圖6A至9B為說明依據多種實施例在基板上藉由多種反應器單元進行處理之圖示及表。
100...線性沈積裝置
110...室壁
114...馬達
118...支撐柱
120...基板
124...支撐板
128...基座
136...反應器
138...延伸桿
Claims (18)
- 一種在基板上沈積層之方法,其包括:在第一方向上引起基板與一或多個反應器之間的相對線性運動,在該第一方向上的相對線性運動期間藉由在該基板上至少注入前驅氣體及反應物氣體而在該基板上沈積至少一個原子層;及在該第一方向上引起該基板與該一或多個反應器之間的相對線性運動之後,在與該第一方向相反的第二方向上引起該基板與該一或多個反應器之間的相對線性運動;其中在該基板與該一或多個反應器間之該第二方向上的相對線性運動期間進行退火處理。
- 如請求項1之方法,其進一步包括將在該第一方向及該第二方向上之該等相對線性運動重複預定次數。
- 如請求項2之方法,其進一步包括:在引起該基板與該一或多個反應器間的相對線性運動之前將該基板安裝至基座上;及在重複該等相對線性運動預定次數後自該基座卸下該基板。
- 如請求項1之方法,其進一步包括注入惰性氣體之自由基至該基板上。
- 如請求項4之方法,其進一步包括在注入該等惰性氣體之自由基至該基板上之後注入源前體至該基板上。
- 如請求項4之方法,其中該惰性氣體包括氬氣。
- 如請求項1之方法,其中該前驅氣體包括三甲基鋁,該反應物氣體包括氧自由基且該層包括Al2 O3 。
- 一種用於在基板上沈積層之裝置,其包括:一基座,其經構造以將該基板固定於其上;一或多個反應器,其經構造以注入氣體或自由基至該基板上;一驅動機構,其耦合至該基座或該一或多個反應器,並經構造以在第一方向上引起該基座與該一或多個反應器之間的相對線性運動,及在該第一方向上的相對線性運動之後,其進一步經構造以在與第一方向相反的第二方向上引起相對線性運動;及一封閉該基座及該一或多個反應器之至少一部分的處理室;其中在於該第一方向上的相對線性運動期間,該一或多個反應器藉由在該基板上至少注入前驅氣體及反應物氣體而在該基板上沈積至少一個原子層,且其中在於該第二方向上的相對線性運動期間藉由該一或多個反應器在該基板上進行退火處理。
- 如請求項8之裝置,其進一步包括經構造以安裝該基板至該基座上或自該基座卸下該基板的抬高銷。
- 如請求項8之裝置,其中該一或多個反應器中至少一個包括用於產生用於使該基板之表面退火之氣體自由基的自由基反應器。
- 如請求項8之裝置,其中該一或多個反應器中至少一個 包括用於產生惰性氣體自由基的自由基反應器。
- 如請求項11之裝置,其中該一或多個反應器中至少一個包括經構造以在該自由基反應器注入該等惰性氣體自由基至該基板上之後注入源前體至該基板上的注射器。
- 如請求項11之裝置,其中該惰性氣體包括氬氣。
- 如請求項8之裝置,其中該前驅氣體包括三甲基鋁,該反應物氣體包括氧自由基及該層包括Al2 O3 。
- 一種包含藉由一種方法沈積之材料層的基板,該方法包括:在第一方向上引起該基板與一或多個反應器之間的相對線性運動,在於第一方向上的相對線性運動期間藉由以第一順序至少注入前驅氣體及反應物氣體至該基板上而在該基板上沈積至少一個原子層;及在該第一方向上引起該基板與該一或多個反應器之間的相對線性運動之後,引起該基板與該一或多個反應器之間在與該第一方向相反的第二方向上相對線性運動,該基板經以不同於該第一順序的第二順序注入該前驅氣體及該反應物氣體;其中在該基板與該一或多個反應器間之第二方向上的相對線性運動期間進行退火處理。
- 如請求項15之基板,其中該方法進一步包括將在該第一方向及該第二方向上之該等相對運動重複預定次數。
- 如請求項16之基板,其中該方法進一步包括注入惰性氣體之自由基至該基板上。
- 如請求項15之基板,其中該前驅氣體包括三甲基鋁,該反應物氣體包括氧自由基及該層包含Al2 O3 材料。
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KR20130062374A (ko) | 2013-06-12 |
WO2012054323A1 (en) | 2012-04-26 |
KR101511457B1 (ko) | 2015-04-10 |
TW201229298A (en) | 2012-07-16 |
US20120094149A1 (en) | 2012-04-19 |
US8771791B2 (en) | 2014-07-08 |
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