TWI501387B - Semiconductor photodetection element - Google Patents

Semiconductor photodetection element Download PDF

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Publication number
TWI501387B
TWI501387B TW099105016A TW99105016A TWI501387B TW I501387 B TWI501387 B TW I501387B TW 099105016 A TW099105016 A TW 099105016A TW 99105016 A TW99105016 A TW 99105016A TW I501387 B TWI501387 B TW I501387B
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TW
Taiwan
Prior art keywords
main surface
region
conductivity type
type semiconductor
semiconductor substrate
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Application number
TW099105016A
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English (en)
Chinese (zh)
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TW201112408A (en
Inventor
Kazuhisa Yamamura
Akira Sakamoto
Terumasa Nagano
Yasuhito Miyazaki
Yasuhito Yoneta
Hisanori Suzuki
Masaharu Muramatsu
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Hamamatsu Photonics Kk
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Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW201112408A publication Critical patent/TW201112408A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW099105016A 2009-02-24 2010-02-22 Semiconductor photodetection element TWI501387B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009041078 2009-02-24
JP2009136408A JP5185206B2 (ja) 2009-02-24 2009-06-05 半導体光検出素子

Publications (2)

Publication Number Publication Date
TW201112408A TW201112408A (en) 2011-04-01
TWI501387B true TWI501387B (zh) 2015-09-21

Family

ID=42665411

Family Applications (2)

Application Number Title Priority Date Filing Date
TW099105016A TWI501387B (zh) 2009-02-24 2010-02-22 Semiconductor photodetection element
TW104102778A TWI617013B (zh) 2009-02-24 2010-02-22 半導體光檢知元件及光電二極體

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104102778A TWI617013B (zh) 2009-02-24 2010-02-22 半導體光檢知元件及光電二極體

Country Status (7)

Country Link
US (1) US8629485B2 (de)
EP (1) EP2403009B1 (de)
JP (1) JP5185206B2 (de)
KR (2) KR101799249B1 (de)
CN (2) CN104064621B (de)
TW (2) TWI501387B (de)
WO (1) WO2010098201A1 (de)

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US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
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JP2016062996A (ja) 2014-09-16 2016-04-25 株式会社東芝 光検出器
JP6738129B2 (ja) 2015-07-28 2020-08-12 株式会社東芝 光検出器およびこれを用いたライダー装置
CN106684203B (zh) * 2015-11-09 2018-04-27 中蕊（武汉）光电科技有限公司 一种镓氮雪崩光电二极管组件及其制作方法
JP6730820B2 (ja) 2016-03-10 2020-07-29 株式会社東芝 光検出器およびこれを用いたライダー装置
KR102470226B1 (ko) 2016-04-12 2022-11-23 엘지이노텍 주식회사 반도체 소자
JP6639427B2 (ja) 2017-01-13 2020-02-05 株式会社東芝 受光装置
JP2018156984A (ja) 2017-03-15 2018-10-04 株式会社東芝 光検出素子
JP2019012826A (ja) * 2017-06-30 2019-01-24 国立研究開発法人物質・材料研究機構 ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法
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JP7163307B2 (ja) * 2017-11-15 2022-10-31 株式会社カネカ 光電変換素子および光電変換装置
WO2019097838A1 (ja) * 2017-11-15 2019-05-23 株式会社カネカ 光電変換装置
JP7148261B2 (ja) * 2018-04-16 2022-10-05 浜松ホトニクス株式会社 裏面入射型半導体光検出素子
JP7089930B2 (ja) * 2018-04-16 2022-06-23 浜松ホトニクス株式会社 半導体光検出素子
JP7368081B2 (ja) * 2018-10-23 2023-10-24 旭化成エレクトロニクス株式会社 光デバイス
WO2021005892A1 (ja) * 2019-07-10 2021-01-14 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP7502866B2 (ja) * 2020-01-21 2024-06-19 浜松ホトニクス株式会社 裏面入射型固体撮像装置の製造方法
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Also Published As

Publication number Publication date
US8629485B2 (en) 2014-01-14
CN102326264B (zh) 2015-12-02
CN102326264A (zh) 2012-01-18
CN104064621B (zh) 2016-08-31
EP2403009B1 (de) 2020-01-01
KR101715957B1 (ko) 2017-03-13
KR101799249B1 (ko) 2017-11-17
US20110266644A1 (en) 2011-11-03
TW201523845A (zh) 2015-06-16
WO2010098201A1 (ja) 2010-09-02
JP2010226072A (ja) 2010-10-07
CN104064621A (zh) 2014-09-24
KR20170015546A (ko) 2017-02-08
JP5185206B2 (ja) 2013-04-17
TWI617013B (zh) 2018-03-01
KR20110128789A (ko) 2011-11-30
EP2403009A4 (de) 2013-03-27
TW201112408A (en) 2011-04-01
EP2403009A1 (de) 2012-01-04

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