TWI470097B - 有機蒸鍍材料用蒸鍍裝置以及有機薄膜之製造方法 - Google Patents

有機蒸鍍材料用蒸鍍裝置以及有機薄膜之製造方法 Download PDF

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Publication number
TWI470097B
TWI470097B TW96117925A TW96117925A TWI470097B TW I470097 B TWI470097 B TW I470097B TW 96117925 A TW96117925 A TW 96117925A TW 96117925 A TW96117925 A TW 96117925A TW I470097 B TWI470097 B TW I470097B
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TW
Taiwan
Prior art keywords
vapor deposition
organic
container
mounting groove
thin film
Prior art date
Application number
TW96117925A
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English (en)
Chinese (zh)
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TW200806802A (en
Inventor
Toshio Negishi
Original Assignee
Ulvac Inc
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Publication date
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Publication of TW200806802A publication Critical patent/TW200806802A/zh
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Publication of TWI470097B publication Critical patent/TWI470097B/zh

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/246Replenishment of source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5893Mixing of deposited material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW96117925A 2006-05-19 2007-05-18 有機蒸鍍材料用蒸鍍裝置以及有機薄膜之製造方法 TWI470097B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006140793 2006-05-19

Publications (2)

Publication Number Publication Date
TW200806802A TW200806802A (en) 2008-02-01
TWI470097B true TWI470097B (zh) 2015-01-21

Family

ID=38723183

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96117925A TWI470097B (zh) 2006-05-19 2007-05-18 有機蒸鍍材料用蒸鍍裝置以及有機薄膜之製造方法

Country Status (7)

Country Link
US (1) US8308866B2 (ja)
EP (1) EP2025774B1 (ja)
JP (1) JP4815447B2 (ja)
KR (1) KR101071605B1 (ja)
CN (1) CN101356296B (ja)
TW (1) TWI470097B (ja)
WO (1) WO2007135870A1 (ja)

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US7945344B2 (en) * 2008-06-20 2011-05-17 SAKT13, Inc. Computational method for design and manufacture of electrochemical systems
US9249502B2 (en) * 2008-06-20 2016-02-02 Sakti3, Inc. Method for high volume manufacture of electrochemical cells using physical vapor deposition
JP5186591B2 (ja) * 2009-02-24 2013-04-17 株式会社アルバック 有機化合物蒸気発生装置及び有機薄膜製造装置
WO2010111084A2 (en) * 2009-03-24 2010-09-30 Drexel University Poly(ethylene glycol) and poly(ethylene oxide) by initiated chemical vapor deposition
US8357464B2 (en) 2011-04-01 2013-01-22 Sakti3, Inc. Electric vehicle propulsion system and method utilizing solid-state rechargeable electrochemical cells
JP4782219B2 (ja) * 2009-07-02 2011-09-28 三菱重工業株式会社 真空蒸着装置
DE102009029236B4 (de) 2009-09-07 2023-02-16 Robert Bosch Gmbh Verdampfer, Anordnung von Verdampfern sowie Beschichtungsanlage
JP5410235B2 (ja) 2009-10-15 2014-02-05 小島プレス工業株式会社 有機高分子薄膜の形成方法及び形成装置
US8252117B2 (en) * 2010-01-07 2012-08-28 Primestar Solar, Inc. Automatic feed system and related process for introducing source material to a thin film vapor deposition system
KR101525813B1 (ko) * 2010-12-09 2015-06-05 울박, 인크 유기 박막 형성 장치
US20120028393A1 (en) * 2010-12-20 2012-02-02 Primestar Solar, Inc. Vapor deposition apparatus and process for continuous deposition of a doped thin film layer on a substrate
US20120052617A1 (en) * 2010-12-20 2012-03-01 General Electric Company Vapor deposition apparatus and process for continuous deposition of a doped thin film layer on a substrate
JP5697500B2 (ja) * 2011-03-16 2015-04-08 株式会社アルバック 真空蒸着装置及び薄膜の形成方法
US10770745B2 (en) 2011-11-09 2020-09-08 Sakti3, Inc. Monolithically integrated thin-film solid state lithium battery device having multiple layers of lithium electrochemical cells
JP5877245B2 (ja) 2011-06-22 2016-03-02 アイクストロン、エスイー 気相蒸着方法及び気相蒸着装置
WO2012175124A1 (en) 2011-06-22 2012-12-27 Aixtron Se Vapor deposition material source and method for making same
WO2012175128A1 (en) 2011-06-22 2012-12-27 Aixtron Se Vapor deposition system and supply head
DE102011051260A1 (de) 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs
WO2013005781A1 (ja) * 2011-07-05 2013-01-10 東京エレクトロン株式会社 成膜装置
US8677932B2 (en) * 2011-08-03 2014-03-25 First Solar, Inc. Apparatus for metering granular source material in a thin film vapor deposition apparatus
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US9627717B1 (en) 2012-10-16 2017-04-18 Sakti3, Inc. Embedded solid-state battery
KR101461738B1 (ko) * 2012-12-21 2014-11-14 주식회사 포스코 가열장치 및 이를 포함하는 코팅 시스템
JP6222929B2 (ja) * 2013-01-15 2017-11-01 日立造船株式会社 真空蒸着装置
JP5728560B2 (ja) * 2013-11-05 2015-06-03 小島プレス工業株式会社 有機高分子薄膜の形成方法及び形成装置
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JP6490435B2 (ja) * 2014-12-26 2019-03-27 株式会社オプトラン 成膜方法及び成膜装置
TWI541612B (zh) * 2014-12-30 2016-07-11 Organic vacuum coating system and film forming method
KR102149172B1 (ko) * 2015-10-06 2020-08-28 가부시키가이샤 아루박 재료 공급 장치 및 증착 장치
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CN106119781B (zh) 2016-07-27 2018-10-30 京东方科技集团股份有限公司 蒸发装置、蒸镀设备和蒸镀方法
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Also Published As

Publication number Publication date
EP2025774B1 (en) 2014-03-05
US8308866B2 (en) 2012-11-13
CN101356296A (zh) 2009-01-28
EP2025774A4 (en) 2012-07-25
KR20080078644A (ko) 2008-08-27
TW200806802A (en) 2008-02-01
WO2007135870A1 (ja) 2007-11-29
JP4815447B2 (ja) 2011-11-16
US20090061090A1 (en) 2009-03-05
CN101356296B (zh) 2011-03-30
JPWO2007135870A1 (ja) 2009-10-01
EP2025774A1 (en) 2009-02-18
KR101071605B1 (ko) 2011-10-10

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