JP5657029B2 - コーティング装置及び遮蔽プレートを有するコーティング装置の操作方法 - Google Patents
コーティング装置及び遮蔽プレートを有するコーティング装置の操作方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
図1は、アイドル位置にある装置を示しており、この位置では、サセプタ5が降下位置にあり、搭載開口6、7、22及び23のゲート8は閉鎖され、そしてプロセスチャンバ1内には基板12もマスク10も無く、遮蔽プレート11も無い。プロセスチャンバ内の全圧は、0.1mbar〜2mbarの間でよい。プロセスチャンバ1は、不活性ガスにより清浄化される。基板格納チャンバ3及びマスク格納チャンバ2は、同じ全圧とされている。
Claims (12)
- コーティングを含む基板(12)の処理を行うための装置であって、
プロセスチャンバ(1)と、
搭載開口(6,7)を介してプロセスチャンバ(1)に接続されプロセスチャンバ(1)内で処理される基板(12)を格納するための、又は、処理プロセスで用いるマスク(10、10’、10”、10’”)を格納するための、少なくとも1つの格納チャンバ(2,3)と、
搭載開口(6,7)を通して基板(12)又はマスク(10、10’、10”、10’”)をプロセスチャンバ(1)に搭載し又は取り出すための搬送装置(13)と、
開始物質をキャリアガスとともにプロセスチャンバ(1)に導入するための温度制御可能なガス入口要素(4)と、
ガス入口要素(4)に対向して配置されており、処理される基板(12)を受容するためのサセプタ(5)と、
遮蔽位置にあるとき、ガス入口要素(4)とサセプタ(5)又はマスク(10)との間に位置して基板(12)又はマスク(10)をガス入口要素(4)からの熱の影響から遮蔽するための遮蔽プレート(11)と、
遮蔽プレート(11)を、基板(12)の処理前にガス入口要素(4)に相対する遮蔽位置から格納位置へ移動させるとともに、基板(12)の処理後に格納位置から遮蔽位置に戻す遮蔽プレート移動装置(15、16)と、を有する前記装置において、
格納位置にあるとき、遮蔽プレート(11)が、格納チャンバ(2、3)のうちの1つの内部に位置することを特徴とする、装置。 - 少なくとも1つの基板(12)を格納するための第1の格納チャンバ(3)と、処理工程の間に遮蔽プレート(11)が収容される第2の格納チャンバ(2)と、を有することを特徴とする請求項1に記載の装置。
- 第2の格納チャンバが、少なくとも1つのマスク(10、10’、10”、10’”)を格納するためのマスク格納チャンバ(2)であり、マスク(10,10’、10”、10’”)は、遮蔽プレート移動装置(15、16)に補助されて、又は、遮蔽プレート(11)に補助されてマスク格納チャンバ(2)からプロセスチャンバ(1)に搬送可能であることを特徴とする請求項2に記載の装置。
- 遮蔽プレート(11)におけるガス入口要素(4)に対向する面及びサセプタ又はマスク(10)に対向する面の、一方又は双方が高い反射率を有することを特徴とする請求項1〜3のいずれかに記載の装置。
- 遮蔽プレート(11)が、2枚のガラス又は石英ガラスの板(18、20)の間に配置された高い反射率の箔(19)を有することを特徴とする請求項1〜4のいずれかに記載の装置。
- マスク格納チャンバ(2)がマガジン(9)を有し、マガジン(9)は、遮蔽プレート(11)及び少なくとも1つのマスク(10)を収容するために鉛直方向に移動可能であることを特徴とする請求項1〜5のいずれかに記載の装置。
- 遮蔽プレート移動装置(15、16)が、マスク格納チャンバ(2)内に配置された駆動装置(25)と、プロセスチャンバ(1)内に延びているレール機構(15)と、を有することを特徴とする請求項1〜6のいずれかに記載の装置。
- プロセスチャンバ(1)における、プロセスチャンバ(1)をマスク格納チャンバ(2)に接続する搭載開口(6)が、プロセスチャンバ(1)を基板格納チャンバ(3)に接続する搭載開口(7)の反対側に配置されていることを特徴とする請求項1〜7のいずれかに記載の装置。
- フォーク形状である基板搬送装置(13)を用いて基板(12)を設置するために、サセプタ(5)からガス入口要素(4)の方向に突出するサポートピン(14)を有し、サセプタ(5)は、上昇により基板(12)と熱伝導的な接触を行うために鉛直方向に移動可能であることを特徴とする請求項1〜8のいずれかに記載の装置。
- コーティングを含む基板(12)の処理を行う方法であって、プロセスチャンバ(1)と、キャリアガスとともに開始物質を導入するために温度制御されたガス入口要素(4)と基板(12)を受容するためのサセプタ(5)との間の遮蔽位置に遮蔽プレート移動装置(15、16)に補助されて運ばれる遮蔽プレート(11)と、を有し、続いて、基板(12)がプロセスチャンバ(1)内の遮蔽位置に搬送装置(13)に補助されて運ばれてサセプタ(5)上に設置された後、遮蔽プレート(11)が遮蔽位置から格納位置へ運ばれ、その後、ガス状の開始物質が温度制御されたガス入口要素(4)を通して導入されることにより基板(12)が処理されて基板(12)上に層が堆積された後、遮蔽プレート(11)が遮蔽プレート移動装置(15、16)を用いて格納位置から遮蔽位置に戻され、最後に、基板(12)が搬送装置(13)に補助されてプロセスチャンバ(1)から格納チャンバ(3)に運ばれる前記方法において、
格納位置における遮蔽プレート(11)が格納チャンバ(2、3)内にあることを特徴とする方法。 - 格納位置にあるマスクが、マスク格納チャンバ(2)内にあり、搭載開口(6)を通って遮蔽位置に運ばれることを特徴とする請求項10に記載の方法。
- マスク(10)が、遮蔽プレート移動装置(15、16)を用いて、又は、遮蔽プレート(11)に補助されて、マスク格納チャンバ(2)からプロセスチャンバ(1)に運ばれることを特徴とする請求項10又は11に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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DE102010000447.2 | 2010-02-17 | ||
DE102010000447A DE102010000447A1 (de) | 2010-02-17 | 2010-02-17 | Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte |
PCT/EP2011/051793 WO2011101273A1 (de) | 2010-02-17 | 2011-02-08 | Beschichtungsvorrichtung sowie verfahren zum betrieb einer beschichtungsvorrichtung mit einer schirmplatte |
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US (1) | US20130040054A1 (ja) |
EP (1) | EP2536865B1 (ja) |
JP (1) | JP5657029B2 (ja) |
KR (1) | KR101784253B1 (ja) |
CN (1) | CN102859030B (ja) |
DE (1) | DE102010000447A1 (ja) |
RU (1) | RU2012139446A (ja) |
TW (2) | TWI591202B (ja) |
WO (1) | WO2011101273A1 (ja) |
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-
2010
- 2010-02-17 DE DE102010000447A patent/DE102010000447A1/de not_active Withdrawn
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2011
- 2011-02-08 WO PCT/EP2011/051793 patent/WO2011101273A1/de active Application Filing
- 2011-02-08 KR KR1020127024095A patent/KR101784253B1/ko active IP Right Grant
- 2011-02-08 CN CN201180019526.9A patent/CN102859030B/zh active Active
- 2011-02-08 RU RU2012139446/02A patent/RU2012139446A/ru not_active Application Discontinuation
- 2011-02-08 EP EP11706191.1A patent/EP2536865B1/de active Active
- 2011-02-08 JP JP2012553260A patent/JP5657029B2/ja active Active
- 2011-02-08 US US13/576,942 patent/US20130040054A1/en not_active Abandoned
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KR20130000391A (ko) | 2013-01-02 |
TWI568878B (zh) | 2017-02-01 |
DE102010000447A1 (de) | 2011-08-18 |
RU2012139446A (ru) | 2014-03-27 |
JP2013519794A (ja) | 2013-05-30 |
WO2011101273A1 (de) | 2011-08-25 |
EP2536865A1 (de) | 2012-12-26 |
TW201617475A (zh) | 2016-05-16 |
KR101784253B1 (ko) | 2017-10-11 |
CN102859030B (zh) | 2015-04-08 |
CN102859030A (zh) | 2013-01-02 |
TW201142074A (en) | 2011-12-01 |
US20130040054A1 (en) | 2013-02-14 |
TWI591202B (zh) | 2017-07-11 |
EP2536865B1 (de) | 2015-07-22 |
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