WO2007135870A1 - 有機蒸着材料用蒸着装置、有機薄膜の製造方法 - Google Patents
有機蒸着材料用蒸着装置、有機薄膜の製造方法 Download PDFInfo
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- WO2007135870A1 WO2007135870A1 PCT/JP2007/059723 JP2007059723W WO2007135870A1 WO 2007135870 A1 WO2007135870 A1 WO 2007135870A1 JP 2007059723 W JP2007059723 W JP 2007059723W WO 2007135870 A1 WO2007135870 A1 WO 2007135870A1
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- Prior art keywords
- vapor deposition
- organic
- container
- deposition material
- thin film
- Prior art date
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 257
- 239000000463 material Substances 0.000 title claims abstract description 138
- 239000010409 thin film Substances 0.000 title claims description 44
- 238000000034 method Methods 0.000 title description 10
- 238000003860 storage Methods 0.000 claims abstract description 78
- 239000011368 organic material Substances 0.000 claims abstract description 26
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000843 powder Substances 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 9
- 230000007723 transport mechanism Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 53
- 238000000354 decomposition reaction Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 230000004075 alteration Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 6
- 239000000112 cooling gas Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000011049 filling Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5893—Mixing of deposited material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
Definitions
- Vapor deposition apparatus for organic vapor deposition material method for producing organic thin film
- the present invention relates to the technical field of organic thin films, and particularly relates to a technique for producing high-quality organic thin films.
- An organic EL element is one of the display elements that have attracted the most attention in recent years, and has excellent characteristics such as high brightness and fast response speed.
- the organic EL device has a light emitting area that emits three different colors of red, green, and blue on a glass substrate.
- the light emitting region has an anode electrode film, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a force sword electrode film laminated in this order, and a color former added to the light emitting layer. Then, it will be colored in red, green or blue! /
- Reference numeral 203 in FIG. 8 is a conventional organic thin film forming apparatus, in which a vapor deposition vessel 212 is arranged inside a vacuum chamber 211.
- the vapor deposition vessel 212 has a vessel body 221, and the upper portion of the vessel body 221 is closed by a lid portion 222 in which one or more discharge ports 224 are formed.
- a powdery organic vapor deposition material 200 is disposed inside the vapor deposition vessel 212.
- Heater 223 is arranged on the side surface and bottom surface of vapor deposition vessel 212, and vacuum chamber 211 is evacuated to the vacuum. When heater 223 generates heat, vapor deposition vessel 212 is heated, and organic vapor deposition in vapor deposition vessel 212 is performed. Material 200 is heated.
- the vapor deposition vessel 212 When the organic vapor deposition material 200 is heated to a temperature equal to or higher than the evaporation temperature, the vapor deposition vessel 212 is filled with the organic material vapor and discharged from the discharge port 224 into the vacuum chamber 211.
- a substrate transfer device 214 is disposed above the discharge port 224, and the substrate is mounted on the holder 210.
- the substrate transfer device 214 When 205 is held and the substrate transfer device 214 is operated, the substrate 205 passes through the position directly above the discharge port 224, and the organic material vapor discharged from the discharge port 224 reaches the surface of the substrate 205, and the hole injection layer And an organic thin film such as a hole transport layer is formed.
- the substrate 205 With the organic material vapor released, the substrate 205 is placed one by one on the outlet 224. If it passes, it becomes possible to sequentially form organic thin films on a plurality of substrates 205.
- Such vapor deposition containers are described in the following documents.
- Patent Document 1 Japanese Patent Laid-Open No. 2003-293120
- FIG. 7 is a graph schematically showing the deterioration state, where the horizontal axis represents time and the vertical axis represents the molecular weight of the organic material vapor released from the outlet 224 (the molecular weight immediately after heating is assumed to be 100%).
- the vaporization temperature is lower when the vaporization temperature is lower. Since the air is easily released, the content ratio also changes in the initial state force after film formation on the plurality of substrates 205, and from the discharge port 224 between the initial stage of heating and after film formation on the plurality of substrates 205. There is a problem that the content ratio of the matrix of the emitted organic material vapor and the color former is greatly different.
- the present invention provides a vacuum chamber, a vapor deposition container disposed inside the vacuum chamber, a supply device in which a vapor deposition material is disposed, and the vapor deposition container and the supply device. It is configured to be able to move between the continued mounting tank, the inside of the mounting tank and the inside of the vacuum tank, and is configured so that the supply device force and the vapor deposition material are supplied when positioned in the mounting tank. And heating the vapor deposition container to generate a material vapor from the vapor deposition material located in the vapor deposition container, and from the discharge port of the vapor deposition container to the vacuum chamber It is a vapor deposition apparatus which has a heating apparatus which discharge
- the supply device connects the storage tank storing the vapor deposition material, the inside of the storage tank and the inside of the mounting tank, and the vapor deposition material inside the storage tank is transferred to the inside of the mounting tank. It is a vapor deposition apparatus which has a connection apparatus moved to.
- the storage tank is disposed on the mounting tank, and when the inside of the storage tank and the inside of the mounting tank are connected, the vapor deposition material inside the storage tank is inside the mounting tank. It is the vapor deposition apparatus comprised so that it might fall and arrange
- the present invention is the vapor deposition apparatus in which a transport mechanism for holding the film formation target and passing the position facing the discharge port is disposed in the vacuum chamber.
- the present invention provides an organic vapor deposition material in a vapor deposition container disposed in a vacuum chamber, heats the vapor deposition container, and discharges an organic material vapor of the organic vapor deposition material from a discharge port of the vapor deposition container.
- a method of manufacturing an organic thin film in which an organic thin film is formed on the film formation target by sequentially passing a position facing the discharge port through the film formation target of the film formation target, wherein the organic vapor deposition material is disposed in the vapor deposition container. The organic material vapor is started to be released, and the organic thin film is formed on the film formation target. Then, the organic vapor deposition is performed in the vapor deposition container in a state where the vapor deposition container is disposed in the vacuum chamber.
- the present invention is a method for manufacturing an organic thin film in which the organic vapor deposition material is supplied to the vapor deposition container for each film formation target.
- the present invention is also the method for producing an organic thin film, wherein the organic vapor deposition material supplied to the vapor deposition container is stored in a vacuum atmosphere at a temperature lower than the evaporation temperature of the organic vapor deposition material.
- the present invention is a method for producing an organic thin film in which the organic vapor deposition material is supplied in a powder state.
- the present invention is also a method for producing an organic thin film in which different types of organic compounds are mixed with the powder of the organic vapor deposition material supplied to the vapor deposition vessel. Further, the present invention is a method for producing an organic thin film, wherein the organic vapor deposition material is a tablet obtained by solidifying powder.
- the present invention is a method for producing an organic thin film in which different types of organic compounds are mixed with the powder of the organic vapor deposition material to be formed into the tablet.
- Organic vapor deposition materials should not be exposed to high temperatures for a long time! / So, organic vapor deposition material does not decompose or change quality.
- FIG. 1 is a perspective view for explaining a vapor deposition apparatus of a first example of the present invention.
- FIG. 2 A schematic cross-sectional view for explaining the inside of the vapor deposition apparatus
- FIG. 3 (a), (b): Process diagram for explaining the procedure for forming an organic thin film using the vapor deposition apparatus of the present invention.
- FIG. 5 is a schematic sectional view for explaining a vapor deposition apparatus according to a second example of the present invention.
- FIG. 6 is a perspective view showing a tablet-like organic vapor deposition material that can be used in the present invention.
- FIG. 7 is a graph for explaining the deterioration of vapors of organic materials released into the vacuum chamber of a conventional vapor deposition apparatus.
- Reference numeral 1 in the perspective view of FIG. 1 and the schematic cross-sectional view of FIG. 2 represents an embodiment of the present invention, and shows a first example of a vapor deposition apparatus for forming an organic thin film.
- the vapor deposition apparatus 1 includes a vacuum chamber 11, a vapor deposition container 12, and one or more supply devices 13a and 13b (the vacuum chamber 11 is omitted in FIG. 1).
- the vapor deposition container 12 is disposed inside the vacuum chamber 11.
- the vapor deposition container 12 has an elongated container body 21 and an elongated plate-like lid portion 22.
- the container body 21 is covered with a lid portion 22.
- One or a plurality of mounting tanks 32a and 32b are connected to the vapor deposition container 12.
- a part of the side wall of the container body 21 (here, the side walls at both ends in the longitudinal direction) and part of the mounting tanks 32a and 32b are formed with openings, and the opening of the container body 21 and the mounting tanks 32a and 32b The opening is in communication, and the inside of the container body 21 and the inside of the mounting tanks 32a and 32b are connected.
- Supply devices 13a and 13b include mounting tanks 32a and 32b, storage tanks 34a and 34b, and connection devices 39a and 3b.
- the inside of the storage tanks 34a and 34b and the inside of the mounting tanks 32a and 32b are configured to be connectable via connection devices 39a and 39b.
- the storage tanks 34a and 34b are disposed above the mounting tanks 32a and 32b.
- connection devices 39a and 39b When the connection devices 39a and 39b are in the closed state, the bottoms of the storage tanks 34a and 34b are closed, the internal forces of the storage tanks 34a and 34b are also shut off, and the internal forces of the mounting tanks 32a and 32b are also blocked.
- the storage tanks 34a and 34b are configured to be connected to the mounting tanks 32a and 32b. Connection When the devices 39a and 39b are in the closed state, the bottoms of the storage tanks 34a and 34b are closed, and the organic vapor deposition materials 40a and 40b having fluidity such as powder and liquid are placed inside the storage tanks 34a and 34b. Can be stored. Here, the organic vapor deposition materials 40a and 40b are powders.
- Opening and closing of the connecting devices 39a and 39b and the amount of the organic vapor deposition materials 40a and 40b passing through the connecting devices 39a and 39b are controlled by a control device such as a computer, and the connecting devices 39a and 39b are in an open state.
- the organic vapor deposition material 40a and the black ink pass through the connecting devices 39a and 39b, and the storage tanks 34a and 34b also move to the inside of the loading tanks 32a and 32b.
- the organic vapor deposition materials 40a and 40b are configured to pass through the connection devices 39a and 39b by an amount set by the control device. After the movement, the connecting devices 39a and 39b are closed.
- the supplied organic vapor deposition materials 40a and 40b may be configured to supply a constant weight, or may be configured to supply a constant volume.
- Conveying devices (boats) 30a and 30b are arranged inside the mounting tanks 32a and 32b, respectively.
- Accommodating portions 31a and 31b are formed in the upper portions of the transfer devices 30a and 30b, respectively.
- the accommodating portions 31a and 31b are concave portions formed in the conveying devices 30a and 30b.
- a receiving tray may be provided on the upper portions of the conveying devices 30a and 30b, and the accommodating portions 31a and 31b may be configured by the receiving tray.
- the accommodating portions 31a and 3 lb are directed vertically upward, and are below the connection portion between the mounting tanks 32a and 32b and the storage tanks 34a and 34b.
- the organic vapor deposition material dropped into the mounting tanks 32a and 32b falls down on the storage portions 31a and 31b and is disposed on the storage portions 31a and 31b.
- Moving mechanisms 37a and 37b are connected to the conveying devices 30a and 30b.
- the conveying devices 30a and 30b are connected to the vapor deposition vessel 12 from the mounting tanks 32a and 32b.
- the transfer devices 30a and 30b are configured to move from the inside of the vapor deposition vessel 12 into the mounting tanks 32a and 32b.
- a flat full plate 26 is disposed in parallel with the lid 22.
- the transfer devices 30 a and 30 b moved into the vapor deposition container 12 are located between the full plate 26 and the bottom surface of the container main body 21.
- a heating device 23 is arranged outside the bottom surface and outside the side surface of the container body 21. Caro The heating device 23 is provided with a resistance heating element that generates heat when energized. When the heating device 23 generates heat, the container body 21, the full plate 26, and the lid 22 are heated to raise the temperature.
- the container body 21, the filling plate 26, and the lid 22 are made of carbon graphite or a metal having a high thermal conductivity.
- the heating device 23 is a device that heats the vapor deposition vessel 12 by electromagnetic dielectric, not just a resistance heating element, a device that heats the vapor deposition vessel 12 by infrared radiation, and a device that heats the vapor deposition vessel 12 by heat conduction of a heated heat medium. Widely includes devices for heating the vapor deposition vessel 12 such as a device for heating and a device for heating by the Peltier effect.
- the inside of the vacuum chamber 11 including the inside of the vapor deposition container 12 and the mounting tanks 32a and 32b is previously set in a vacuum atmosphere, and the transfer devices 30a and 30b located in the vapor deposition container 12 are formed of the container body.
- the radiant heat emitted from 21 and the radiant heat reflected by the full plate 26 are received and heated, and the temperature of the organic vapor deposition material placed in the accommodating portions 31a and 3 lb rises.
- the organic vapor deposition material When the organic vapor deposition material is heated to a temperature higher than the vapor release temperature, the organic vapor is released from the organic vapor deposition material.
- One or a plurality of discharge ports 24 and 27 are formed in the lid portion 22 and the full plate 26, respectively, and the discharged organic material vapor is supplied from the full plate 26 and the container main body 21 inside the vapor deposition vessel 12. It flows out into the space between the full plate 26 and the lid part 22 while filling the space between the bottom surface of the gas and discharged into the vacuum chamber 11 through the discharge port 24 while filling the space. Is done. The vapor of the organic material does not leak from any part other than the outlet 24 of the vapor deposition container 12.
- a substrate transfer mechanism 14 is disposed inside the vacuum chamber 11.
- a holder 10 is attached to the substrate transfer mechanism 14. When the substrate of the film formation target is held by the holder 10 and moved in the vacuum chamber 11, the substrate is configured to pass through a position facing the discharge port 24 of the lid 22.
- the discharge ports 24 and 27 are arranged along the longitudinal direction of the lid portion 22 and the full plate 26, and the substrate Moves in a direction perpendicular to the longitudinal direction of the lid 22.
- the width of the substrate is shorter than the length of the region where the discharge port 27 is arranged.
- a vacuum exhaust system 15 is connected to each of the vacuum tank 11, the mounting tanks 32a and 32b, and the storage tanks 34a and 34b.
- the vacuum tank 11 and the mounting tank 32a, 32b and storage tanks 34a, 34b are evacuated.
- evacuation the gas inside the vapor deposition vessel 12 is discharged through the vacuum chamber 11.
- Each of the tanks 11, 32a, 32b, 34a, 34b may be evacuated by the same evacuation system 15, or may be individually provided with an evacuation system.
- the storage tanks 34a and 34b may be configured to be evacuated through the inside of the mounting tanks 32a and 32b.
- the heating device 23 is energized to generate heat, and the vapor deposition container 12 Heat.
- the transfer devices 30a and 30b are arranged inside the mounting tanks 32a and 32b so that the temperature is not increased even if the heating device 23 generates heat.
- the organic vapor deposition materials 40a and 40b are arranged in advance, the connection devices 39a and 39b are opened, and the organic vapor deposition materials 40a and 40b in the temporary storage chambers 34a and 34b are set in a predetermined amount. It is dropped and placed on the accommodating portions 31a and 31b of the transfer devices 30a and 30b.
- Reference numerals 41a and 41b in FIG. 3 (a) indicate organic vapor deposition materials disposed on the accommodating portions 31a and 3 lb (in FIGS. 3 and 4, the vacuum tank 11 and the storage tank 35a, 35b is omitted).
- the holder 10 holds a substrate 5 as a film formation target in such a direction that the film formation surface faces the discharge port 24.
- the transfer devices 30a and 30b are moved into the vapor deposition vessel 12 with the organic vapor deposition materials 41a and 41b placed thereon. Since the heat capacity of the transport devices 30a and 30b is small, the organic vapor deposition material on the transport devices 30a and 30b 41 The a and 41b are heated to the evaporation temperature in a short time by the radiant heat radiated from the vapor deposition vessel 12 such as the vessel body 21 and the organic material vapor is released.
- the substrate 5 reaches the vapor deposition container 12 in a state where the organic material vapor is released and passes through a position facing the discharge port 24 of the lid portion 22, an organic thin film is formed on the surface of the substrate 5.
- a plurality of substrates 5 pass through the position facing the discharge port 24 of the vapor deposition container 12 one by one.
- the organic vapor deposition materials 41a and 41b gradually decrease when the organic material vapor is released.
- the amount of the organic vapor deposition materials 41a and 41b arranged on the transfer devices 30a and 30b is set to an amount that does not disappear before the substrate 5 passes, but disappears immediately after the passage.
- the transfer devices 30a and 30b are returned to the mounting tanks 32a and 32b, and the organic vapor deposition material is replenished on the transfer devices 30a and 30b as described below.
- Sealing plates 33a and 33b are disposed at the end portions of the transfer devices 30a and 30b on the vapor deposition container 12 side.
- the sealing plates 33a and 33b are larger in diameter than the opening where the inside of the transfer devices 30a and 30b and the inside of the mounting tanks 32a and 32b are connected, and the periphery of the opening or the edges of the sealing plates 33a and 33b There is an O-ring nearby.
- a gas supply system 17 is connected to the mounting tanks 32a and 32b, and a cooling gas (a rare gas such as argon gas or an inert gas such as nitrogen gas) is introduced into the mounting tanks 32a and 32b.
- a cooling gas a rare gas such as argon gas or an inert gas such as nitrogen gas
- the temperature of the transfer device 3 Oa, 30b is cooled to a temperature lower than the vapor discharge temperature by heat conduction of gas.
- the temperature of the transfer devices 30a and 30b is easily increased by the radiant heat radiated by the transfer devices 30a and 30b themselves. descend. [0041] Therefore, the temperature of the transfer devices 30a and 30b can be lowered below the evaporation temperature even by natural cooling without introducing a cooling gas. In this case, the cooling time is longer than the cooling using the cooling gas.
- the transfer devices 30a and 30b are cooled to a predetermined temperature, the introduction of the cooling gas is stopped, and the inside of the mounting tanks 32a and 32b is evacuated to the same level as the pressure in the vapor deposition container 12 and the storage tanks 34a and 34b. Then, the connection devices 39a and 39b are opened, and a predetermined amount of the organic vapor deposition material is dropped from the temporary storage chambers 34a and 34b, and placed on the transfer devices 30a and 30b.
- the transfer devices 30a and 30b are moved into the vapor deposition vessel 12, and after raising the temperature and releasing the organic material vapor, the next substrate passes through the position facing the discharge port 24. An organic thin film is formed on the substrate.
- the surroundings of the storage tanks 34a and 34b are at room temperature, and the organic vapor deposition materials 40a and 40b disposed therein are also maintained at room temperature.
- the inside of the storage tanks 34a and 34b is evacuated.
- the organic vapor deposition materials 40a and 40b disposed in the storage tanks 34a and 34b are stored in a room temperature vacuum environment, and oxidation and decomposition do not proceed. Organic vapor deposition materials 40a and 40b without deterioration are supplied.
- the organic vapor deposition material is heated only for the time in the vapor deposition container 12.
- the time is the time for the substrate 5 to pass through, and the deterioration in the vapor deposition vessel 12 where the heating time is short is very small.
- the organic vapor deposition materials 40a and 40b stored in the storage tanks 34a and 34b include an organic compound powder serving as a base material of the light emitting layer of the organic EL element and an organic colorant for the light emitting layer.
- the compound powder is mixed in a predetermined ratio in advance, and the organic light emitting layer is formed on the surface of the substrate 5 without separately arranging the base material vapor deposition container and the color former vapor deposition container in the vacuum chamber 11. Can be formed.
- the organic compound powder of the base material and the organic compound powder of the color former are uniformly mixed, and the starting power of forming the coloring layer (organic thin film) on the surface of one substrate Until the end of the formation Is short Therefore, the content ratio of the organic compound vapor of the base material and the organic compound vapor of the color former in the organic material vapor discharged into the vacuum chamber 11 is small, and even if it changes, In addition, since different organic vapor deposition materials 41a and 41b are supplied and arranged in the vapor deposition container 12, the light emitting layer having the same composition is formed on each substrate 5.
- the organic material vapor is generated in a state where the organic vapor deposition materials 41a and 41b are placed on the transfer devices 30a and 30b, but the transfer devices 30a and 30b on which the organic vapor deposition materials 41a and 41b are placed. 4 is inserted into the vapor deposition container 12 and then turned upside down by rotating the transfer devices 30a and 30b as shown in FIG.
- the materials 41a and 41b can be dropped from the accommodating portions 31a and 31b onto the bottom surface of the vapor deposition vessel 12, and the organic vapor deposition materials 41a and 41b can be heated by heat conduction from the vapor deposition vessel 12 in addition to radiant heat.
- the organic vapor deposition materials 41a and 41b arranged on the bottom surface of the vapor deposition vessel 12 are heated to a temperature equal to or higher than the evaporation temperature, the organic material vapor is discharged from the discharge port 24 of the lid 22 and faces the discharge port 24. An organic thin film is formed on the surface of the substrate passing through the position.
- the transfer devices 30a and 30b are returned to the mounting tanks 32a and 32b.
- the transfer devices 30a and 30b can be accommodated in the mounting tanks 32a and 32b. Since the conveying devices 30a and 30b do not rise in temperature, the conveying devices 30a and 30b are turned upside down before or after the conveying devices 30a and 30b are accommodated, and the accommodating portions 31a and 31b are moved vertically upward. If the organic vapor deposition material is placed at the position where the organic vapor deposition material falls from the storage tanks 34a, 34b into the mounting tanks 32a, 32b, the new organic vapor deposition material can be transported without cooling. It can be placed on 30a, 30b.
- the transfer apparatus As shown in FIG. 4 (b), while the thin film is formed on the substrate surface by the organic vapor deposition materials 41a and 41b arranged on the bottom surface of the container body 21, the transfer apparatus Another organic vapor deposition material 42a, 42b can be disposed in the devices 30a, 30b, and the distance between the preceding substrate 5 and the following substrate 5 can be shortened.
- a saucer can be placed on the bottom surface of the container body 21 where the organic vapor deposition materials 41a and 41b fall.
- storage tanks 35a and 35b are connected to the storage towers 34a and 34b by moving pipes 36a and 36b, respectively.
- An organic vapor deposition material is arranged inside the storage tanks 35a and 35b.
- the movable tubes 36a and 36b are provided with open / closed norebs 38a and 38b.
- the storage tanks 35a, 35b are evacuated, and the pressure in the storage tanks 35a, 35b is equal to the pressure in the storage tanks 34a, 34b.
- the on-off valves 38a and 38b are opened, and the organic vapor deposition material in the storage tanks 35a and 35b is moved to the storage tanks 34a and 34b through the transfer pipes 36a and 36b.
- the open / close valves 38a and 38b are closed, and the interiors of the storage tanks 34a and 34b are shut off from the storage tanks 35a and 35b.
- the inside of the storage tanks 35a and 35b can carry the organic vapor deposition material into the storage tanks 35a and 35b while being exposed to the atmosphere.
- the storage tanks 34a and 34b are provided with stirring devices 51a and 5 lb.
- the organic vapor deposition material is supplied from the storage tanks 34a and 34b to the transport devices 30a and 30b so that the organic vapor deposition materials 40a and 40b in the storage tanks 34a and 34b are not hollow, the agitation devices 51a and 51b It is becoming.
- the agitation apparatuses 51a and 5 lb may be used for stirring.
- connection tanks 39a, 39b and other valves cause the inside of the storage tanks 34a, 34b to block the internal force of the mounting tanks 32a, 32b, and the inside of the mounting tanks 32a, 32b is placed in a vacuum atmosphere.
- the organic vapor deposition material is carried into the storage tanks 34a and 34b while the inside of the storage tanks 34a and 34b is exposed to the atmosphere while the internal forces of the storage tanks 34a and 34b are cut off.
- the discharge port 24 is disposed above the vapor deposition container 12, and the substrate 5 passes above the vapor deposition container 12 with the film formation surface directed vertically downward.
- the present invention is not limited to such a vapor deposition apparatus 1.
- the discharge port may be arranged in the vertical direction and the film formation surface of the substrate may be vertical.
- Reference numeral 2 in FIG. 5 is such a vapor deposition apparatus of the present invention, which is a second example of the present invention.
- an elongated vapor deposition vessel 112 is disposed in a vacuum chamber 111.
- the vapor deposition vessel 112 has an elongated vessel body 121 and a plate-like lid portion 122.
- the container body 121 is arranged with its longitudinal direction vertical, and thus the opening is directed to the side.
- the opening of the container main body 121 is closed by a lid 122 arranged vertically.
- the lid portion 122 is provided with one or more discharge ports 124 arranged in the longitudinal direction.
- the longitudinal direction of the lid part 122 is vertical, and therefore the discharge port 124 is arranged vertically.
- an elongated full plate 126 is arranged in parallel with the lid portion 122 so that the longitudinal direction is straight.
- the full plate 126 is also provided with one or more discharge ports 127 along the longitudinal direction.
- a substrate transfer mechanism 114 is disposed in the vacuum chamber 111.
- the substrate transport mechanism 114 has a holder 110 attached thereto, and the substrate 105 to be deposited passes through the position facing the discharge port 124 of the lid 122 while being held vertically by the holder 110. It is configured as follows.
- the vapor deposition apparatus 2 of the second example also has the same supply devices 13a and 13b as the vapor deposition apparatus 1 of the first example.
- the same members are denoted by the same reference numerals and description thereof is omitted.
- the bottom surface constitutes one side wall of the vapor deposition container 112, and is the bottom surface of the container main body 121.
- the one side wall of the vapor deposition container 112 has one or more supply devices 13a, 13b are arranged side by side in the vertical direction! Here, there are two supply devices 13a and 13b, one being arranged on the upper end side of the vapor deposition vessel 112 and the other being arranged on the lower end side.
- An opening is formed in a part of the bottom surface of the container body 121 (here, the position near the upper end and the vicinity of the lower end) and a part of the mounting tanks 32a and 32b, and the opening of the container body 121 and the mounting tank
- the openings of 32a and 32b are in communication, and the inside of the container body 121 and the inside of the mounting tanks 32a and 32b are connected.
- the transfer devices 30a and 30b arranged in the loading tanks 32a and 32b are configured to be inserted between the bottom surface of the container body 121 and the full plate 126 in the container body 121! RU
- the container body 121 is heated by the heating device 123.
- the inside of the storage tanks 34a and 34b and the inside of the mounting tanks 32a and 32b are configured to be connectable via connection devices 39a and 39b.
- the connection devices 39a and 39b are opened, and the transfer devices 30a and 3 Ob
- the organic vapor deposition material 41a, 41b is attached to the vapor deposition vessel 112 such as the vessel body 121. Radiant heat raises the temperature above the evaporation temperature in a short time, and organic material vapor is released from the organic vapor deposition materials 41a and 4 lb on the transport devices 30a and 30b.
- the vapor deposition vessel 112 While the vapor deposition vessel 112 is filled with the organic material vapor and is uniformly discharged from the discharge port 124 of the lid 122, the film formation surface of the substrate 105 made vertical by the substrate transfer device 114 is released. An organic thin film is formed on the surface of the substrate 105 by passing through the position while facing the outlet 124.
- the organic vapor deposition materials 41a and 41b on the housing portions 31a and 31b evaporate and disappear.
- the transfer devices 30a and 30b are returned to the mounting tanks 32a and 32b, and after the transfer devices 30a and 30b become lower than the vapor discharge temperature by cooling with cooling gas or natural cooling, the storage tank An amount of the organic vapor deposition material set from 34a and 34b is dropped into the accommodating portions 31a and 31b of the transfer devices 30a and 30b, and an organic thin film is formed on the surface of another substrate in the same manner as the above process.
- the powder or liquid organic vapor deposition material 40a and 40b having fluidity is dropped from the storage tanks 34a and 34b, and the transfer apparatus 30a, Although placed on 30b, the present invention is limited to transportation of organic vapor deposition material or movement of organic vapor deposition material by dropping.
- a material transport mechanism is provided between the storage tanks 34a, 34b and the mounting tanks 32a, 32b, and the internal tanks of the storage tanks 34a, 34b are installed without dropping the organic vapor deposition materials 40a, 40b.
- the vacuum atmosphere may be moved horizontally or obliquely to 2a and 32b and placed in the transfer devices 30a and 30b.
- the organic vapor deposition material may not have fluidity.
- the powder is compressed by compression or the like to obtain a tablet-shaped organic vapor deposition material 60.
- it may be supplied to the conveying devices 30a and 30b.
- the amount of the tablet-like organic vapor deposition material 60 is the same as the amount by which the organic thin film is formed on the surface of one substrate or a fraction of that, the amount of each substrate is reduced.
- One or a plurality of tablet-like organic vapor deposition materials 60 are supplied to the inside of the vapor deposition vessel 12 to form an organic thin film.
- Different organic compounds such as the organic compound of the base material and the organic compound of the color former can also be uniformly dispersed and contained in the tablet-like organic vapor deposition material 60 in a certain blending amount.
- Different compounds are not limited to the base material and the color former.
- the organic thin film is formed by the vapor deposition apparatus of the present invention.
- the vapor deposition apparatus of the present invention evaporates a vapor deposition material that deteriorates by heating for a long time in a vacuum atmosphere, and thereby forms a plurality of components. It is suitable for a manufacturing method in which a thin film is successively formed on a film object, and the vapor deposition material for generating vapor in the vapor deposition container is not limited to an organic compound.
- the vapor deposition apparatus of the present invention can be used not only for forming a thin film of an organic compound but also for forming a thin film of an inorganic thin film or a composite material.
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- Physical Vapour Deposition (AREA)
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Abstract
Description
Claims
Priority Applications (4)
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JP2007540847A JP4815447B2 (ja) | 2006-05-19 | 2007-05-11 | 有機蒸着材料用蒸着装置、有機薄膜の製造方法 |
CN2007800013758A CN101356296B (zh) | 2006-05-19 | 2007-05-11 | 有机蒸镀材料用蒸镀装置、有机薄膜的制造方法 |
EP07743158.3A EP2025774B1 (en) | 2006-05-19 | 2007-05-11 | Vapor deposition apparatus for organic vapor deposition material and process for producing organic thin film |
US12/212,030 US8308866B2 (en) | 2006-05-19 | 2008-09-17 | Vapor deposition apparatus for an organic vapor deposition material and a method for producing an organic film |
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JP2006-140793 | 2006-05-19 | ||
JP2006140793 | 2006-05-19 |
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US12/212,030 Continuation US8308866B2 (en) | 2006-05-19 | 2008-09-17 | Vapor deposition apparatus for an organic vapor deposition material and a method for producing an organic film |
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WO2007135870A1 true WO2007135870A1 (ja) | 2007-11-29 |
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US (1) | US8308866B2 (ja) |
EP (1) | EP2025774B1 (ja) |
JP (1) | JP4815447B2 (ja) |
KR (1) | KR101071605B1 (ja) |
CN (1) | CN101356296B (ja) |
TW (1) | TWI470097B (ja) |
WO (1) | WO2007135870A1 (ja) |
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US20110042208A1 (en) * | 2008-02-26 | 2011-02-24 | Ulvac, Inc. | Film forming source, vapor deposition apparatus, and apparatus for manufacturing an organic el element |
JP2009299081A (ja) * | 2008-05-16 | 2009-12-24 | Ulvac Japan Ltd | 蒸発装置、成膜装置、有機薄膜形成方法 |
JP5186591B2 (ja) * | 2009-02-24 | 2013-04-17 | 株式会社アルバック | 有機化合物蒸気発生装置及び有機薄膜製造装置 |
JP2011084773A (ja) * | 2009-10-15 | 2011-04-28 | Kojima Press Industry Co Ltd | 有機高分子薄膜の形成方法及び形成装置 |
JP2012193413A (ja) * | 2011-03-16 | 2012-10-11 | Ulvac Japan Ltd | 真空蒸着装置及び薄膜の形成方法 |
WO2013005781A1 (ja) * | 2011-07-05 | 2013-01-10 | 東京エレクトロン株式会社 | 成膜装置 |
JP2014136804A (ja) * | 2013-01-15 | 2014-07-28 | Hitachi Zosen Corp | 真空蒸着装置 |
JP2014025152A (ja) * | 2013-11-05 | 2014-02-06 | Kojima Press Industry Co Ltd | 有機高分子薄膜の形成方法及び形成装置 |
JP2016125135A (ja) * | 2014-12-26 | 2016-07-11 | 株式会社オプトラン | 成膜方法及び成膜装置 |
US10669621B2 (en) | 2016-08-24 | 2020-06-02 | Toshiba Memory Corporation | Vaporization system |
Also Published As
Publication number | Publication date |
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EP2025774A1 (en) | 2009-02-18 |
KR20080078644A (ko) | 2008-08-27 |
TWI470097B (zh) | 2015-01-21 |
JP4815447B2 (ja) | 2011-11-16 |
EP2025774B1 (en) | 2014-03-05 |
EP2025774A4 (en) | 2012-07-25 |
CN101356296A (zh) | 2009-01-28 |
CN101356296B (zh) | 2011-03-30 |
US8308866B2 (en) | 2012-11-13 |
JPWO2007135870A1 (ja) | 2009-10-01 |
TW200806802A (en) | 2008-02-01 |
US20090061090A1 (en) | 2009-03-05 |
KR101071605B1 (ko) | 2011-10-10 |
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