TWI464792B - Substrate processing system cleaning method, memory media and substrate processing system - Google Patents
Substrate processing system cleaning method, memory media and substrate processing system Download PDFInfo
- Publication number
- TWI464792B TWI464792B TW098108460A TW98108460A TWI464792B TW I464792 B TWI464792 B TW I464792B TW 098108460 A TW098108460 A TW 098108460A TW 98108460 A TW98108460 A TW 98108460A TW I464792 B TWI464792 B TW I464792B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- batch
- processing
- type
- cleaning
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 157
- 239000000758 substrate Substances 0.000 title claims description 150
- 238000004140 cleaning Methods 0.000 title claims description 109
- 230000008569 process Effects 0.000 claims description 124
- 238000005406 washing Methods 0.000 claims description 41
- 238000003860 storage Methods 0.000 claims description 37
- 239000000047 product Substances 0.000 description 150
- 235000012431 wafers Nutrition 0.000 description 93
- 230000006870 function Effects 0.000 description 53
- 230000006641 stabilisation Effects 0.000 description 15
- 238000011105 stabilization Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 230000001186 cumulative effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008067806A JP5220447B2 (ja) | 2008-03-17 | 2008-03-17 | 基板処理システムの洗浄方法、記憶媒体及び基板処理システム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201003751A TW201003751A (en) | 2010-01-16 |
| TWI464792B true TWI464792B (zh) | 2014-12-11 |
Family
ID=41061644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098108460A TWI464792B (zh) | 2008-03-17 | 2009-03-16 | Substrate processing system cleaning method, memory media and substrate processing system |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8382910B2 (enExample) |
| JP (1) | JP5220447B2 (enExample) |
| KR (1) | KR101227235B1 (enExample) |
| CN (1) | CN101540274B (enExample) |
| TW (1) | TWI464792B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101097912B1 (ko) * | 2006-01-27 | 2011-12-23 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 |
| JP5947030B2 (ja) | 2010-12-28 | 2016-07-06 | キヤノンアネルバ株式会社 | 基板処理方法、基板処理装置 |
| CN103215572B (zh) * | 2012-01-19 | 2016-12-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 半导体设备工艺控制方法和半导体设备工艺控制装置 |
| JP5954108B2 (ja) * | 2012-10-23 | 2016-07-20 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP2016103496A (ja) * | 2014-11-27 | 2016-06-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP6956147B2 (ja) * | 2019-07-23 | 2021-10-27 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| CN111118458B (zh) * | 2019-12-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 腔室清洁方法及装置 |
| JP7013618B2 (ja) | 2020-02-03 | 2022-01-31 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US20240209500A1 (en) * | 2021-05-06 | 2024-06-27 | Applied Materials, Inc. | Processing system and methods for forming void-free and seam-free tungsten features |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197122C (zh) * | 2001-03-29 | 2005-04-13 | 株式会社东芝 | 制造半导体器件的方法 |
| US20070215180A1 (en) * | 2006-03-15 | 2007-09-20 | Tokyo Electron Limited | Cleaning method of substrate processing equipment, substrate processing equipment, and recording medium for recording program thereof |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3350264B2 (ja) * | 1994-12-22 | 2002-11-25 | 松下電器産業株式会社 | プラズマクリーニング方法 |
| JPH09298152A (ja) * | 1996-05-07 | 1997-11-18 | Nikon Corp | 加工方法 |
| JPH10135094A (ja) * | 1996-10-28 | 1998-05-22 | Canon Sales Co Inc | 半導体製造装置 |
| JPH10199817A (ja) * | 1997-01-10 | 1998-07-31 | Kokusai Electric Co Ltd | 成膜装置 |
| JPH10270396A (ja) | 1997-03-26 | 1998-10-09 | Super Silicon Kenkyusho:Kk | ウエハ表面洗浄方法およびウエハの総合研磨洗浄装置 |
| US6168672B1 (en) * | 1998-03-06 | 2001-01-02 | Applied Materials Inc. | Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system |
| JP4017463B2 (ja) * | 2002-07-11 | 2007-12-05 | 株式会社荏原製作所 | 洗浄方法 |
| JP2006319041A (ja) * | 2005-05-11 | 2006-11-24 | Tokyo Electron Ltd | プラズマクリーニング方法、成膜方法 |
| JP4822048B2 (ja) * | 2005-12-08 | 2011-11-24 | 富士通セミコンダクター株式会社 | 半導体製造装置のプリメンテナンス方法 |
| JP4963842B2 (ja) * | 2006-02-13 | 2012-06-27 | 東京エレクトロン株式会社 | 基板処理室の洗浄方法、記憶媒体及び基板処理装置 |
| JP4671355B2 (ja) * | 2006-03-15 | 2011-04-13 | 東京エレクトロン株式会社 | 基板処理装置のクリーニング方法，基板処理装置，プログラムを記録した記録媒体 |
-
2008
- 2008-03-17 JP JP2008067806A patent/JP5220447B2/ja active Active
-
2009
- 2009-03-03 KR KR1020090018091A patent/KR101227235B1/ko not_active Expired - Fee Related
- 2009-03-05 US US12/398,587 patent/US8382910B2/en active Active
- 2009-03-16 TW TW098108460A patent/TWI464792B/zh active
- 2009-03-17 CN CN2009101284480A patent/CN101540274B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197122C (zh) * | 2001-03-29 | 2005-04-13 | 株式会社东芝 | 制造半导体器件的方法 |
| US20070215180A1 (en) * | 2006-03-15 | 2007-09-20 | Tokyo Electron Limited | Cleaning method of substrate processing equipment, substrate processing equipment, and recording medium for recording program thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090099461A (ko) | 2009-09-22 |
| US8382910B2 (en) | 2013-02-26 |
| CN101540274B (zh) | 2012-06-13 |
| TW201003751A (en) | 2010-01-16 |
| JP2009224580A (ja) | 2009-10-01 |
| KR101227235B1 (ko) | 2013-01-28 |
| US20090229635A1 (en) | 2009-09-17 |
| CN101540274A (zh) | 2009-09-23 |
| JP5220447B2 (ja) | 2013-06-26 |
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