KR101227235B1 - 기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템 - Google Patents

기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템 Download PDF

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KR101227235B1
KR101227235B1 KR1020090018091A KR20090018091A KR101227235B1 KR 101227235 B1 KR101227235 B1 KR 101227235B1 KR 1020090018091 A KR1020090018091 A KR 1020090018091A KR 20090018091 A KR20090018091 A KR 20090018091A KR 101227235 B1 KR101227235 B1 KR 101227235B1
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South Korea
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lot
processing
predetermined
cleaning
executions
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KR1020090018091A
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KR20090099461A (ko
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마사히로 누마쿠라
히로아키 모치즈키
기요히토 이이지마
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020090018091A 2008-03-17 2009-03-03 기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템 Expired - Fee Related KR101227235B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-067806 2008-03-17
JP2008067806A JP5220447B2 (ja) 2008-03-17 2008-03-17 基板処理システムの洗浄方法、記憶媒体及び基板処理システム

Publications (2)

Publication Number Publication Date
KR20090099461A KR20090099461A (ko) 2009-09-22
KR101227235B1 true KR101227235B1 (ko) 2013-01-28

Family

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KR1020090018091A Expired - Fee Related KR101227235B1 (ko) 2008-03-17 2009-03-03 기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템

Country Status (5)

Country Link
US (1) US8382910B2 (enExample)
JP (1) JP5220447B2 (enExample)
KR (1) KR101227235B1 (enExample)
CN (1) CN101540274B (enExample)
TW (1) TWI464792B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101097912B1 (ko) * 2006-01-27 2011-12-23 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
JP5947030B2 (ja) 2010-12-28 2016-07-06 キヤノンアネルバ株式会社 基板処理方法、基板処理装置
CN103215572B (zh) * 2012-01-19 2016-12-14 北京北方微电子基地设备工艺研究中心有限责任公司 半导体设备工艺控制方法和半导体设备工艺控制装置
JP5954108B2 (ja) * 2012-10-23 2016-07-20 東京エレクトロン株式会社 基板処理装置
JP2016103496A (ja) * 2014-11-27 2016-06-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6956147B2 (ja) * 2019-07-23 2021-10-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN111118458B (zh) * 2019-12-04 2022-03-22 北京北方华创微电子装备有限公司 腔室清洁方法及装置
JP7013618B2 (ja) 2020-02-03 2022-01-31 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20240209500A1 (en) * 2021-05-06 2024-06-27 Applied Materials, Inc. Processing system and methods for forming void-free and seam-free tungsten features

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298152A (ja) * 1996-05-07 1997-11-18 Nikon Corp 加工方法
JPH10199817A (ja) * 1997-01-10 1998-07-31 Kokusai Electric Co Ltd 成膜装置
KR100464579B1 (ko) * 2001-03-29 2005-01-03 가부시끼가이샤 도시바 반도체 장치 제조 방법
KR20070093878A (ko) * 2006-03-15 2007-09-19 동경 엘렉트론 주식회사 기판 처리 장치의 클리닝 방법, 기판 처리 장치,프로그램을 기록한 기록 매체

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3350264B2 (ja) * 1994-12-22 2002-11-25 松下電器産業株式会社 プラズマクリーニング方法
JPH10135094A (ja) * 1996-10-28 1998-05-22 Canon Sales Co Inc 半導体製造装置
JPH10270396A (ja) 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk ウエハ表面洗浄方法およびウエハの総合研磨洗浄装置
US6168672B1 (en) * 1998-03-06 2001-01-02 Applied Materials Inc. Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system
JP4017463B2 (ja) * 2002-07-11 2007-12-05 株式会社荏原製作所 洗浄方法
JP2006319041A (ja) * 2005-05-11 2006-11-24 Tokyo Electron Ltd プラズマクリーニング方法、成膜方法
JP4822048B2 (ja) * 2005-12-08 2011-11-24 富士通セミコンダクター株式会社 半導体製造装置のプリメンテナンス方法
JP4963842B2 (ja) * 2006-02-13 2012-06-27 東京エレクトロン株式会社 基板処理室の洗浄方法、記憶媒体及び基板処理装置
US20070215180A1 (en) * 2006-03-15 2007-09-20 Tokyo Electron Limited Cleaning method of substrate processing equipment, substrate processing equipment, and recording medium for recording program thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298152A (ja) * 1996-05-07 1997-11-18 Nikon Corp 加工方法
JPH10199817A (ja) * 1997-01-10 1998-07-31 Kokusai Electric Co Ltd 成膜装置
KR100464579B1 (ko) * 2001-03-29 2005-01-03 가부시끼가이샤 도시바 반도체 장치 제조 방법
KR20070093878A (ko) * 2006-03-15 2007-09-19 동경 엘렉트론 주식회사 기판 처리 장치의 클리닝 방법, 기판 처리 장치,프로그램을 기록한 기록 매체

Also Published As

Publication number Publication date
KR20090099461A (ko) 2009-09-22
US8382910B2 (en) 2013-02-26
CN101540274B (zh) 2012-06-13
TW201003751A (en) 2010-01-16
JP2009224580A (ja) 2009-10-01
TWI464792B (zh) 2014-12-11
US20090229635A1 (en) 2009-09-17
CN101540274A (zh) 2009-09-23
JP5220447B2 (ja) 2013-06-26

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