CN101540274B - 基板处理系统的洗净方法和基板处理系统 - Google Patents

基板处理系统的洗净方法和基板处理系统 Download PDF

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Publication number
CN101540274B
CN101540274B CN2009101284480A CN200910128448A CN101540274B CN 101540274 B CN101540274 B CN 101540274B CN 2009101284480 A CN2009101284480 A CN 2009101284480A CN 200910128448 A CN200910128448 A CN 200910128448A CN 101540274 B CN101540274 B CN 101540274B
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batch
processing
goods
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handled
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CN101540274A (zh
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沼仓雅博
望月宏朗
饭岛清仁
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN2009101284480A 2008-03-17 2009-03-17 基板处理系统的洗净方法和基板处理系统 Active CN101540274B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008067806 2008-03-17
JP2008-067806 2008-03-17
JP2008067806A JP5220447B2 (ja) 2008-03-17 2008-03-17 基板処理システムの洗浄方法、記憶媒体及び基板処理システム

Publications (2)

Publication Number Publication Date
CN101540274A CN101540274A (zh) 2009-09-23
CN101540274B true CN101540274B (zh) 2012-06-13

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US (1) US8382910B2 (enExample)
JP (1) JP5220447B2 (enExample)
KR (1) KR101227235B1 (enExample)
CN (1) CN101540274B (enExample)
TW (1) TWI464792B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101097912B1 (ko) * 2006-01-27 2011-12-23 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
JP5947030B2 (ja) 2010-12-28 2016-07-06 キヤノンアネルバ株式会社 基板処理方法、基板処理装置
CN103215572B (zh) * 2012-01-19 2016-12-14 北京北方微电子基地设备工艺研究中心有限责任公司 半导体设备工艺控制方法和半导体设备工艺控制装置
JP5954108B2 (ja) * 2012-10-23 2016-07-20 東京エレクトロン株式会社 基板処理装置
JP2016103496A (ja) * 2014-11-27 2016-06-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6956147B2 (ja) * 2019-07-23 2021-10-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN111118458B (zh) * 2019-12-04 2022-03-22 北京北方华创微电子装备有限公司 腔室清洁方法及装置
JP7013618B2 (ja) 2020-02-03 2022-01-31 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20240209500A1 (en) * 2021-05-06 2024-06-27 Applied Materials, Inc. Processing system and methods for forming void-free and seam-free tungsten features

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270396A (ja) 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk ウエハ表面洗浄方法およびウエハの総合研磨洗浄装置
JP2004047714A (ja) * 2002-07-11 2004-02-12 Ebara Corp 洗浄装置及び洗浄方法
CN101022693A (zh) * 2006-02-13 2007-08-22 东京毅力科创株式会社 基板处理室的洗净方法、存储介质和基板处理室

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3350264B2 (ja) * 1994-12-22 2002-11-25 松下電器産業株式会社 プラズマクリーニング方法
JPH09298152A (ja) * 1996-05-07 1997-11-18 Nikon Corp 加工方法
JPH10135094A (ja) * 1996-10-28 1998-05-22 Canon Sales Co Inc 半導体製造装置
JPH10199817A (ja) * 1997-01-10 1998-07-31 Kokusai Electric Co Ltd 成膜装置
US6168672B1 (en) * 1998-03-06 2001-01-02 Applied Materials Inc. Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system
JP2002299315A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体装置の製造方法
JP2006319041A (ja) * 2005-05-11 2006-11-24 Tokyo Electron Ltd プラズマクリーニング方法、成膜方法
JP4822048B2 (ja) * 2005-12-08 2011-11-24 富士通セミコンダクター株式会社 半導体製造装置のプリメンテナンス方法
US20070215180A1 (en) * 2006-03-15 2007-09-20 Tokyo Electron Limited Cleaning method of substrate processing equipment, substrate processing equipment, and recording medium for recording program thereof
JP4671355B2 (ja) * 2006-03-15 2011-04-13 東京エレクトロン株式会社 基板処理装置のクリーニング方法，基板処理装置，プログラムを記録した記録媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270396A (ja) 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk ウエハ表面洗浄方法およびウエハの総合研磨洗浄装置
JP2004047714A (ja) * 2002-07-11 2004-02-12 Ebara Corp 洗浄装置及び洗浄方法
CN101022693A (zh) * 2006-02-13 2007-08-22 东京毅力科创株式会社 基板处理室的洗净方法、存储介质和基板处理室

Also Published As

Publication number Publication date
KR20090099461A (ko) 2009-09-22
US8382910B2 (en) 2013-02-26
TW201003751A (en) 2010-01-16
JP2009224580A (ja) 2009-10-01
TWI464792B (zh) 2014-12-11
KR101227235B1 (ko) 2013-01-28
US20090229635A1 (en) 2009-09-17
CN101540274A (zh) 2009-09-23
JP5220447B2 (ja) 2013-06-26

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