JP5220447B2 - 基板処理システムの洗浄方法、記憶媒体及び基板処理システム - Google Patents

基板処理システムの洗浄方法、記憶媒体及び基板処理システム Download PDF

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JP5220447B2
JP5220447B2 JP2008067806A JP2008067806A JP5220447B2 JP 5220447 B2 JP5220447 B2 JP 5220447B2 JP 2008067806 A JP2008067806 A JP 2008067806A JP 2008067806 A JP2008067806 A JP 2008067806A JP 5220447 B2 JP5220447 B2 JP 5220447B2
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Japan
Prior art keywords
substrate
lot
processing
type
cleaning
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JP2008067806A
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English (en)
Japanese (ja)
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JP2009224580A (ja
JP2009224580A5 (enExample
Inventor
雅博 沼倉
宏朗 望月
清仁 飯島
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008067806A priority Critical patent/JP5220447B2/ja
Priority to KR1020090018091A priority patent/KR101227235B1/ko
Priority to US12/398,587 priority patent/US8382910B2/en
Priority to TW098108460A priority patent/TWI464792B/zh
Priority to CN2009101284480A priority patent/CN101540274B/zh
Publication of JP2009224580A publication Critical patent/JP2009224580A/ja
Publication of JP2009224580A5 publication Critical patent/JP2009224580A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2008067806A 2008-03-17 2008-03-17 基板処理システムの洗浄方法、記憶媒体及び基板処理システム Active JP5220447B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008067806A JP5220447B2 (ja) 2008-03-17 2008-03-17 基板処理システムの洗浄方法、記憶媒体及び基板処理システム
KR1020090018091A KR101227235B1 (ko) 2008-03-17 2009-03-03 기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템
US12/398,587 US8382910B2 (en) 2008-03-17 2009-03-05 Cleaning method for substrate processing system, storage medium, and substrate processing system
TW098108460A TWI464792B (zh) 2008-03-17 2009-03-16 Substrate processing system cleaning method, memory media and substrate processing system
CN2009101284480A CN101540274B (zh) 2008-03-17 2009-03-17 基板处理系统的洗净方法和基板处理系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008067806A JP5220447B2 (ja) 2008-03-17 2008-03-17 基板処理システムの洗浄方法、記憶媒体及び基板処理システム

Publications (3)

Publication Number Publication Date
JP2009224580A JP2009224580A (ja) 2009-10-01
JP2009224580A5 JP2009224580A5 (enExample) 2011-04-28
JP5220447B2 true JP5220447B2 (ja) 2013-06-26

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Family Applications (1)

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JP2008067806A Active JP5220447B2 (ja) 2008-03-17 2008-03-17 基板処理システムの洗浄方法、記憶媒体及び基板処理システム

Country Status (5)

Country Link
US (1) US8382910B2 (enExample)
JP (1) JP5220447B2 (enExample)
KR (1) KR101227235B1 (enExample)
CN (1) CN101540274B (enExample)
TW (1) TWI464792B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101097912B1 (ko) * 2006-01-27 2011-12-23 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
JP5947030B2 (ja) 2010-12-28 2016-07-06 キヤノンアネルバ株式会社 基板処理方法、基板処理装置
CN103215572B (zh) * 2012-01-19 2016-12-14 北京北方微电子基地设备工艺研究中心有限责任公司 半导体设备工艺控制方法和半导体设备工艺控制装置
JP5954108B2 (ja) * 2012-10-23 2016-07-20 東京エレクトロン株式会社 基板処理装置
JP2016103496A (ja) * 2014-11-27 2016-06-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6956147B2 (ja) * 2019-07-23 2021-10-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN111118458B (zh) * 2019-12-04 2022-03-22 北京北方华创微电子装备有限公司 腔室清洁方法及装置
JP7013618B2 (ja) 2020-02-03 2022-01-31 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20240209500A1 (en) * 2021-05-06 2024-06-27 Applied Materials, Inc. Processing system and methods for forming void-free and seam-free tungsten features

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3350264B2 (ja) * 1994-12-22 2002-11-25 松下電器産業株式会社 プラズマクリーニング方法
JPH09298152A (ja) * 1996-05-07 1997-11-18 Nikon Corp 加工方法
JPH10135094A (ja) * 1996-10-28 1998-05-22 Canon Sales Co Inc 半導体製造装置
JPH10199817A (ja) * 1997-01-10 1998-07-31 Kokusai Electric Co Ltd 成膜装置
JPH10270396A (ja) 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk ウエハ表面洗浄方法およびウエハの総合研磨洗浄装置
US6168672B1 (en) * 1998-03-06 2001-01-02 Applied Materials Inc. Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system
JP2002299315A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体装置の製造方法
JP4017463B2 (ja) * 2002-07-11 2007-12-05 株式会社荏原製作所 洗浄方法
JP2006319041A (ja) * 2005-05-11 2006-11-24 Tokyo Electron Ltd プラズマクリーニング方法、成膜方法
JP4822048B2 (ja) * 2005-12-08 2011-11-24 富士通セミコンダクター株式会社 半導体製造装置のプリメンテナンス方法
JP4963842B2 (ja) * 2006-02-13 2012-06-27 東京エレクトロン株式会社 基板処理室の洗浄方法、記憶媒体及び基板処理装置
US20070215180A1 (en) * 2006-03-15 2007-09-20 Tokyo Electron Limited Cleaning method of substrate processing equipment, substrate processing equipment, and recording medium for recording program thereof
JP4671355B2 (ja) * 2006-03-15 2011-04-13 東京エレクトロン株式会社 基板処理装置のクリーニング方法，基板処理装置，プログラムを記録した記録媒体

Also Published As

Publication number Publication date
KR20090099461A (ko) 2009-09-22
US8382910B2 (en) 2013-02-26
CN101540274B (zh) 2012-06-13
TW201003751A (en) 2010-01-16
JP2009224580A (ja) 2009-10-01
TWI464792B (zh) 2014-12-11
KR101227235B1 (ko) 2013-01-28
US20090229635A1 (en) 2009-09-17
CN101540274A (zh) 2009-09-23

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