TWI434419B - 薄膜電晶體基板及其製造方法 - Google Patents
薄膜電晶體基板及其製造方法 Download PDFInfo
- Publication number
- TWI434419B TWI434419B TW095124361A TW95124361A TWI434419B TW I434419 B TWI434419 B TW I434419B TW 095124361 A TW095124361 A TW 095124361A TW 95124361 A TW95124361 A TW 95124361A TW I434419 B TWI434419 B TW I434419B
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- TW
- Taiwan
- Prior art keywords
- region
- semiconductor layer
- layer
- photoresist pattern
- level portion
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 114
- 229920002120 photoresistant polymer Polymers 0.000 claims description 91
- 239000012535 impurity Substances 0.000 claims description 34
- 238000005468 ion implantation Methods 0.000 claims description 31
- 229910052732 germanium Inorganic materials 0.000 claims description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 7
- 238000004380 ashing Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 176
- 239000011229 interlayer Substances 0.000 description 25
- 238000000206 photolithography Methods 0.000 description 10
- 239000002356 single layer Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical group O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050075690A KR101267499B1 (ko) | 2005-08-18 | 2005-08-18 | 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200715562A TW200715562A (en) | 2007-04-16 |
| TWI434419B true TWI434419B (zh) | 2014-04-11 |
Family
ID=37738104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095124361A TWI434419B (zh) | 2005-08-18 | 2006-07-04 | 薄膜電晶體基板及其製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7759178B2 (enExample) |
| JP (1) | JP5399608B2 (enExample) |
| KR (1) | KR101267499B1 (enExample) |
| CN (1) | CN1917155B (enExample) |
| TW (1) | TWI434419B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI759751B (zh) * | 2020-05-29 | 2022-04-01 | 逢甲大學 | 短通道複晶矽薄膜電晶體及其方法 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101343435B1 (ko) * | 2006-08-09 | 2013-12-20 | 삼성디스플레이 주식회사 | 어레이 기판의 제조방법 및 이에 의해 제조된 어레이 기판 |
| KR100796609B1 (ko) * | 2006-08-17 | 2008-01-22 | 삼성에스디아이 주식회사 | Ｃｍｏｓ 박막 트랜지스터의 제조방법 |
| KR101752400B1 (ko) | 2010-09-03 | 2017-06-30 | 삼성디스플레이 주식회사 | 다결정 규소층의 형성 방법, 상기 다결정 규소층을 포함하는 박막 트랜지스터 및 유기 발광 장치 |
| JP5807352B2 (ja) * | 2011-03-18 | 2015-11-10 | セイコーエプソン株式会社 | 半導体装置の製造方法、及び電気光学装置の製造方法 |
| WO2012153498A1 (ja) * | 2011-05-09 | 2012-11-15 | シャープ株式会社 | 半導体装置の製造方法 |
| TWI419336B (zh) * | 2011-08-26 | 2013-12-11 | Au Optronics Corp | 半導體元件及其製作方法 |
| KR101856221B1 (ko) * | 2011-09-20 | 2018-05-09 | 엘지디스플레이 주식회사 | 박막 트랜지스터의 제조 방법 및 유기발광 표시장치의 제조 방법 |
| CN103165482B (zh) * | 2011-12-13 | 2015-06-17 | 颀邦科技股份有限公司 | 凸块工艺 |
| TW201413825A (zh) * | 2012-09-17 | 2014-04-01 | Ying-Jia Xue | 薄膜電晶體的製作方法 |
| CN104701175A (zh) * | 2013-12-10 | 2015-06-10 | 昆山国显光电有限公司 | 一种薄膜晶体管的制造方法 |
| CN103700707B (zh) * | 2013-12-18 | 2018-12-11 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制备方法、显示装置 |
| KR102060377B1 (ko) * | 2014-01-27 | 2020-02-11 | 한국전자통신연구원 | 디스플레이 소자, 그 제조 방법, 및 이미지 센서 소자의 제조방법 |
| CN104064472B (zh) * | 2014-06-13 | 2017-01-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示装置 |
| CN104409512A (zh) * | 2014-11-11 | 2015-03-11 | 深圳市华星光电技术有限公司 | 基于双栅极结构的低温多晶硅薄膜晶体管及其制备方法 |
| US9437435B2 (en) * | 2014-11-11 | 2016-09-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | LTPS TFT having dual gate structure and method for forming LTPS TFT |
| CN105097668A (zh) * | 2015-06-30 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
| CN105140124B (zh) * | 2015-07-29 | 2018-12-11 | 武汉华星光电技术有限公司 | 一种多晶硅薄膜晶体管的制作方法 |
| CN105097552A (zh) * | 2015-08-14 | 2015-11-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置 |
| CN105161459B (zh) * | 2015-09-07 | 2019-01-29 | 武汉华星光电技术有限公司 | 低温多晶硅阵列基板及其制作方法 |
| CN105206568B (zh) * | 2015-10-16 | 2018-06-05 | 京东方科技集团股份有限公司 | 一种低温多晶硅tft阵列基板的制备方法及其阵列基板 |
| CN105470197B (zh) * | 2016-01-28 | 2018-03-06 | 武汉华星光电技术有限公司 | 低温多晶硅阵列基板的制作方法 |
| CN106024633A (zh) | 2016-06-23 | 2016-10-12 | 京东方科技集团股份有限公司 | 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置 |
| CN106128961A (zh) * | 2016-08-30 | 2016-11-16 | 深圳市华星光电技术有限公司 | 一种ltps薄膜晶体管的制作方法 |
| CN106169473A (zh) * | 2016-08-31 | 2016-11-30 | 深圳市华星光电技术有限公司 | 一种基于ltps的coms器件及其制作方法 |
| CN106128962B (zh) * | 2016-09-08 | 2019-11-05 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板、显示装置 |
| CN106449521B (zh) * | 2016-10-31 | 2018-06-15 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
| CN106952824A (zh) * | 2017-03-08 | 2017-07-14 | 深圳市华星光电技术有限公司 | 一种低温多晶硅薄膜晶体管的制作方法 |
| CN107818948B (zh) * | 2017-10-31 | 2020-04-17 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法 |
| CN108807422B (zh) * | 2018-06-12 | 2020-08-04 | 武汉华星光电技术有限公司 | 阵列基板制作方法及阵列基板、显示面板 |
| CN114792694A (zh) * | 2021-01-08 | 2022-07-26 | 华为技术有限公司 | 薄膜晶体管阵列基板及其制备方法、显示面板 |
| USD1057608S1 (en) * | 2022-08-11 | 2025-01-14 | Mima International Holdings Limited | Canopy of baby carriage |
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| JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
| JP3621151B2 (ja) * | 1994-06-02 | 2005-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW374196B (en) * | 1996-02-23 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same |
| JP3659005B2 (ja) | 1998-07-31 | 2005-06-15 | 日産自動車株式会社 | 燃料タンクの蒸発燃料処理装置 |
| US6512271B1 (en) * | 1998-11-16 | 2003-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6518594B1 (en) * | 1998-11-16 | 2003-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor devices |
| US6277679B1 (en) * | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
| JP4578609B2 (ja) * | 1999-03-19 | 2010-11-10 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
| JP4115654B2 (ja) * | 1999-04-30 | 2008-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100355713B1 (ko) * | 1999-05-28 | 2002-10-12 | 삼성전자 주식회사 | 탑 게이트 방식 티에프티 엘시디 및 제조방법 |
| JP2000345889A (ja) | 1999-06-02 | 2000-12-12 | Mitsubishi Motors Corp | 筒内噴射型内燃機関 |
| JP4627822B2 (ja) * | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TW541605B (en) * | 2000-07-07 | 2003-07-11 | Hitachi Ltd | Fabrication method of semiconductor integrated circuit device |
| JP4954401B2 (ja) * | 2000-08-11 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| JP2002134756A (ja) * | 2000-10-26 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP4312420B2 (ja) * | 2001-05-18 | 2009-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2003282880A (ja) * | 2002-03-22 | 2003-10-03 | Hitachi Displays Ltd | 表示装置 |
| TW579604B (en) * | 2002-12-17 | 2004-03-11 | Ind Tech Res Inst | Method of forming a top-gate type thin film transistor device |
| KR100585410B1 (ko) * | 2003-11-11 | 2006-06-07 | 엘지.필립스 엘시디 주식회사 | 구동회로 일체형 액정표시장치의 스위칭 소자 및 구동소자및 그 제조방법 |
| JP4321486B2 (ja) * | 2004-07-12 | 2009-08-26 | セイコーエプソン株式会社 | 半導体装置及び半導体装置の製造方法 |
| KR101153297B1 (ko) * | 2004-12-22 | 2012-06-07 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| KR101239889B1 (ko) * | 2005-08-13 | 2013-03-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
-
2005
- 2005-08-18 KR KR1020050075690A patent/KR101267499B1/ko not_active Expired - Fee Related
-
2006
- 2006-07-04 TW TW095124361A patent/TWI434419B/zh not_active IP Right Cessation
- 2006-08-01 JP JP2006209726A patent/JP5399608B2/ja not_active Expired - Fee Related
- 2006-08-03 CN CN2006101092561A patent/CN1917155B/zh not_active Expired - Fee Related
- 2006-08-18 US US11/506,740 patent/US7759178B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI759751B (zh) * | 2020-05-29 | 2022-04-01 | 逢甲大學 | 短通道複晶矽薄膜電晶體及其方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1917155A (zh) | 2007-02-21 |
| KR20070021436A (ko) | 2007-02-23 |
| KR101267499B1 (ko) | 2013-05-31 |
| CN1917155B (zh) | 2010-12-22 |
| JP5399608B2 (ja) | 2014-01-29 |
| US7759178B2 (en) | 2010-07-20 |
| US20070040174A1 (en) | 2007-02-22 |
| TW200715562A (en) | 2007-04-16 |
| JP2007053356A (ja) | 2007-03-01 |
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