JP5111802B2 - 薄膜トランジスタ基板、及びその製造方法 - Google Patents
薄膜トランジスタ基板、及びその製造方法 Download PDFInfo
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- JP5111802B2 JP5111802B2 JP2006198510A JP2006198510A JP5111802B2 JP 5111802 B2 JP5111802 B2 JP 5111802B2 JP 2006198510 A JP2006198510 A JP 2006198510A JP 2006198510 A JP2006198510 A JP 2006198510A JP 5111802 B2 JP5111802 B2 JP 5111802B2
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- 239000000758 substrate Substances 0.000 title claims description 54
- 239000010409 thin film Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 19
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
図1は、本発明における代表的なTFTを示している。図1(a)は、TFTの平面構造を示した平面図である。図1(b)は、図1(a)におけるA−B部の断面方向を示した断面図である。図1(c)は、図1(a)におけるC−D部の断面方向を示した断面図である。図1(a)〜(c)を用いて、TFTの構造について説明する。なお、図1では、例えば、図9で示した走査信号駆動回路115、または表示信号駆動回路116に形成されるCMOSトランジスタのうち、NMOSまたはPMOSのどちらか一方の薄膜トランジスタを示している。なお、アレイ基板の構成については、図9で示したものと同様である。
次に、図6を用いて、第2の実施形態について説明する。図6は、第2の実施形態に係るTFT220の平面構造を示した平面図である。第1の実施の形態と同じ構成要素については、図1で示した符号と同じ符号を用いる。第2の実施形態は、ゲート電極6の開口部形状に特徴を有すものである。
次に、図7を用いて、第3の実施形態について説明する。図7は、第3の実施形態に係るTFT320の平面構造を示した平面図である。第1の実施の形態と同じ構成要素については、図1で示した符号と同じ符号を用いる。第3の実施形態も、第2の実施形態と同様に、ゲート電極6の開口部形状に特徴を有すものである。
次に、図8を用いて、第4の実施形態について説明する。図8(a)は、第4の実施形態に係るTFT420の平面構造を示した平面図である。図8(b)は、図8(a)におけるE−F部の断面構造を示す断面図である。第1の実施の形態と同じ構成要素については、図1で示した符号と同じ符号を用いる。第4の実施形態についても、第2、及び第3の実施形態と同様に、ゲート電極6の開口部形状に特徴を有すものである。
3 半導体層、 301、302 半導体層、
31 ソース/ドレイン領域、 311、312 ソース/ドレイン領域、
32 チャネル領域、
4 テーパー部、 41、42 テーパー部、
5 ゲート絶縁膜、
6 ゲート電極、
61、62、63、64、67 開口部、
65 レジスト、 66 領域、
7 層間絶縁膜、
8 コンタクトホール、 81、82 コンタクトホール、
9 ソース配線、 91、92 ソース配線、
11 絶縁性基板、 12 絶縁保護層、 13 半導体層、
14 テーパー部、 15 ゲート絶縁膜、 16 ゲート電極、
110 アレイ基板
111 表示領域、 112 額縁領域、
113 ゲート配線、 114 ソース配線、
115 走査信号駆動回路、 116 表示信号駆動回路、
117 画素、 118、119 外部配線、
120、121 TFT、
101 NMOS領域、 102 PMOS領域、
Claims (2)
- 第1のチャネル導電型の薄膜トランジスタと、第2のチャネル導電型の薄膜トランジスタとを有する薄膜トランジスタ基板であって、
両薄膜トランジスタにおいて、チャネル領域の端部におけるテーパー部分上に前記薄膜トランジスタのソース領域側からドレイン領域側に平面的につながった形状を有する開口部が設けられ、該開口部によって、ゲート絶縁膜を介して前記チャネル領域と対向する部分と前記チャネル領域の端部よりも外側にある部分に切り離されたゲート電極と、
前記テーパー部分上および前記ゲート電極上を覆い形成された層間絶縁膜と、
前記層間絶縁膜の上層に設けられ、前記切り離されたゲート電極における前記チャネル領域と対向する部分と前記チャネル領域の端部よりも外側にある部分とを前記層間絶縁膜に設けられるコンタクトホールを介して電気的に接続する配線層とが設けられ、
第1のチャネル導電型の薄膜トランジスタにおける前記開口部に対応するチャネル領域には第2のチャネル導電型の薄膜トランジスタのソース/ドレイン領域と同じ型の不純物領域を備え、
第2のチャネル導電型の薄膜トランジスタにおける前記開口部に対応するチャネル領域には第1のチャネル導電型の薄膜トランジスタのソース/ドレイン領域と同じ型の不純物領域を備えることを特徴とする薄膜トランジスタ基板。 - 第1のチャネル導電型の薄膜トランジスタと、第2のチャネル導電型の薄膜トランジスタとを有する薄膜トランジスタ基板の製造方法であって、
両薄膜トランジスタにおいて、チャネル領域の端部におけるテーパー部分上に前記薄膜トランジスタのソース領域側からドレイン領域側に平面的につながった形状を有する開口部が設けられ、該開口部によって、ゲート絶縁膜を介して前記チャネル領域と対向する部分と前記チャネル領域の端部よりも外側にある部分に切り離されたゲート電極を形成し、
前記テーパー部分上および前記ゲート電極上を覆うように層間絶縁膜を形成し、
前記層間絶縁膜の上層に、前記切り離されたゲート電極における前記チャネル領域と対向する部分と前記チャネル領域の端部よりも外側にある部分とを前記層間絶縁膜に設けられるコンタクトホールを介して電気的に接続する配線層を形成し、
前記第1のチャネル導電型の薄膜トランジスタのソース/ドレイン領域を形成するための不純物導入と、前記第2のチャネル導電型の薄膜トランジスタの前記ゲート電極に設けられた開口部に対応するチャネル領域に導入される不純物導入とが同じ工程で実施され、
前記第2のチャネル導電型の薄膜トランジスタのソース/ドレイン領域を形成するための不純物導入と、前記第1のチャネル導電型の薄膜トランジスタの前記ゲート電極に設けられた開口部に対応するチャネル領域に導入される不純物導入とが同じ工程で実施されることを特徴とする薄膜トランジスタ基板の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2006198510A JP5111802B2 (ja) | 2006-07-20 | 2006-07-20 | 薄膜トランジスタ基板、及びその製造方法 |
US11/765,103 US7473972B2 (en) | 2006-07-20 | 2007-06-19 | Thin film transistor substrate and method for manufacturing the same |
TW096122330A TW200814331A (en) | 2006-07-20 | 2007-06-21 | This film transistor substrate and method for manufacturing the same |
KR1020070071000A KR100883813B1 (ko) | 2006-07-20 | 2007-07-16 | 박막 트랜지스터 기판 및 그 제조 방법 |
CNB2007101373409A CN100539165C (zh) | 2006-07-20 | 2007-07-20 | 薄膜晶体管基板及其制造方法 |
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JP2006198510A JP5111802B2 (ja) | 2006-07-20 | 2006-07-20 | 薄膜トランジスタ基板、及びその製造方法 |
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JP2008028117A JP2008028117A (ja) | 2008-02-07 |
JP5111802B2 true JP5111802B2 (ja) | 2013-01-09 |
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US (1) | US7473972B2 (ja) |
JP (1) | JP5111802B2 (ja) |
KR (1) | KR100883813B1 (ja) |
CN (1) | CN100539165C (ja) |
TW (1) | TW200814331A (ja) |
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KR101213707B1 (ko) * | 2008-07-08 | 2012-12-18 | 엘지디스플레이 주식회사 | 폴리실리콘 박막트랜지스터 및 그 제조방법 |
JP5547986B2 (ja) | 2010-02-24 | 2014-07-16 | ラピスセミコンダクタ株式会社 | 半導体装置およびその製造方法 |
GB2479150B (en) | 2010-03-30 | 2013-05-15 | Pragmatic Printing Ltd | Transistor and its method of manufacture |
KR20120003640A (ko) | 2010-07-05 | 2012-01-11 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
JP6061536B2 (ja) * | 2012-07-30 | 2017-01-18 | 株式会社ジャパンディスプレイ | 表示装置 |
JP2014239173A (ja) * | 2013-06-10 | 2014-12-18 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及びそれを用いた表示装置 |
US20160254280A1 (en) * | 2013-11-06 | 2016-09-01 | Joled Inc. | Thin-film transistor and method of manufacturing the same |
TWI642186B (zh) * | 2013-12-18 | 2018-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
CN108258033B (zh) * | 2016-12-29 | 2020-12-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN109037037B (zh) * | 2018-09-27 | 2023-09-01 | 武汉华星光电技术有限公司 | 低温多晶硅层、薄膜晶体管及其制作方法 |
CN109637932B (zh) | 2018-11-30 | 2020-11-10 | 武汉华星光电技术有限公司 | 薄膜晶体管及其制备方法 |
CN111048524A (zh) * | 2019-11-26 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及制备方法、显示面板 |
CN113327989B (zh) * | 2021-05-19 | 2022-05-17 | 厦门天马微电子有限公司 | 薄膜晶体管、阵列基板、显示面板及显示装置 |
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JPH07176753A (ja) * | 1993-12-17 | 1995-07-14 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置およびその作製方法 |
JPH07326763A (ja) * | 1994-06-02 | 1995-12-12 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタおよび液晶表示装置 |
JP2000077665A (ja) * | 1998-08-27 | 2000-03-14 | Toshiba Corp | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
JP2000332254A (ja) | 1999-05-21 | 2000-11-30 | Toshiba Corp | 薄膜トランジスタ装置 |
TWI224806B (en) * | 2000-05-12 | 2004-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
KR100477102B1 (ko) * | 2001-12-19 | 2005-03-17 | 삼성에스디아이 주식회사 | 금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법 |
JP4017886B2 (ja) | 2002-02-28 | 2007-12-05 | シャープ株式会社 | 薄膜トランジスタ装置及びその製造方法 |
JP2003298059A (ja) | 2002-03-29 | 2003-10-17 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜トランジスタ |
JP2006128160A (ja) * | 2004-10-26 | 2006-05-18 | Seiko Epson Corp | 半導体装置及びその製造方法 |
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KR20080008966A (ko) | 2008-01-24 |
KR100883813B1 (ko) | 2009-02-16 |
JP2008028117A (ja) | 2008-02-07 |
CN100539165C (zh) | 2009-09-09 |
CN101110435A (zh) | 2008-01-23 |
US20080017865A1 (en) | 2008-01-24 |
US7473972B2 (en) | 2009-01-06 |
TW200814331A (en) | 2008-03-16 |
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