KR101267499B1 - 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 - Google Patents

박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 Download PDF

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KR101267499B1
KR101267499B1 KR1020050075690A KR20050075690A KR101267499B1 KR 101267499 B1 KR101267499 B1 KR 101267499B1 KR 1020050075690 A KR1020050075690 A KR 1020050075690A KR 20050075690 A KR20050075690 A KR 20050075690A KR 101267499 B1 KR101267499 B1 KR 101267499B1
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South Korea
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semiconductor layer
region
layer
photoresist pattern
thin film
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Korean (ko)
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KR20070021436A (ko
Inventor
김일곤
박태형
문국철
김철호
김수경
김경훈
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삼성디스플레이 주식회사
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Priority to KR1020050075690A priority Critical patent/KR101267499B1/ko
Priority to TW095124361A priority patent/TWI434419B/zh
Priority to JP2006209726A priority patent/JP5399608B2/ja
Priority to CN2006101092561A priority patent/CN1917155B/zh
Priority to US11/506,740 priority patent/US7759178B2/en
Publication of KR20070021436A publication Critical patent/KR20070021436A/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020050075690A 2005-08-18 2005-08-18 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 Expired - Fee Related KR101267499B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020050075690A KR101267499B1 (ko) 2005-08-18 2005-08-18 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
TW095124361A TWI434419B (zh) 2005-08-18 2006-07-04 薄膜電晶體基板及其製造方法
JP2006209726A JP5399608B2 (ja) 2005-08-18 2006-08-01 薄膜トランジスタ基板の製造方法
CN2006101092561A CN1917155B (zh) 2005-08-18 2006-08-03 薄膜晶体管基板及其制造
US11/506,740 US7759178B2 (en) 2005-08-18 2006-08-18 Thin film transistor substrate and fabrication thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050075690A KR101267499B1 (ko) 2005-08-18 2005-08-18 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터

Publications (2)

Publication Number Publication Date
KR20070021436A KR20070021436A (ko) 2007-02-23
KR101267499B1 true KR101267499B1 (ko) 2013-05-31

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US (1) US7759178B2 (enExample)
JP (1) JP5399608B2 (enExample)
KR (1) KR101267499B1 (enExample)
CN (1) CN1917155B (enExample)
TW (1) TWI434419B (enExample)

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KR101343435B1 (ko) * 2006-08-09 2013-12-20 삼성디스플레이 주식회사 어레이 기판의 제조방법 및 이에 의해 제조된 어레이 기판
KR100796609B1 (ko) * 2006-08-17 2008-01-22 삼성에스디아이 주식회사 Ｃｍｏｓ 박막 트랜지스터의 제조방법
KR101752400B1 (ko) 2010-09-03 2017-06-30 삼성디스플레이 주식회사 다결정 규소층의 형성 방법, 상기 다결정 규소층을 포함하는 박막 트랜지스터 및 유기 발광 장치
JP5807352B2 (ja) * 2011-03-18 2015-11-10 セイコーエプソン株式会社 半導体装置の製造方法、及び電気光学装置の製造方法
US20140051238A1 (en) * 2011-05-09 2014-02-20 Sharp Kabushiki Kaisha Method for producing semiconductor device
TWI419336B (zh) * 2011-08-26 2013-12-11 Au Optronics Corp 半導體元件及其製作方法
KR101856221B1 (ko) * 2011-09-20 2018-05-09 엘지디스플레이 주식회사 박막 트랜지스터의 제조 방법 및 유기발광 표시장치의 제조 방법
CN103165482B (zh) * 2011-12-13 2015-06-17 颀邦科技股份有限公司 凸块工艺
TW201413825A (zh) * 2012-09-17 2014-04-01 Ying-Jia Xue 薄膜電晶體的製作方法
CN104701175A (zh) * 2013-12-10 2015-06-10 昆山国显光电有限公司 一种薄膜晶体管的制造方法
CN103700707B (zh) * 2013-12-18 2018-12-11 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制备方法、显示装置
KR102060377B1 (ko) * 2014-01-27 2020-02-11 한국전자통신연구원 디스플레이 소자, 그 제조 방법, 및 이미지 센서 소자의 제조방법
CN104064472B (zh) * 2014-06-13 2017-01-25 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示装置
CN104409512A (zh) * 2014-11-11 2015-03-11 深圳市华星光电技术有限公司 基于双栅极结构的低温多晶硅薄膜晶体管及其制备方法
US9437435B2 (en) * 2014-11-11 2016-09-06 Shenzhen China Star Optoelectronics Technology Co., Ltd. LTPS TFT having dual gate structure and method for forming LTPS TFT
CN105097668A (zh) * 2015-06-30 2015-11-25 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示装置
CN105140124B (zh) * 2015-07-29 2018-12-11 武汉华星光电技术有限公司 一种多晶硅薄膜晶体管的制作方法
CN105097552A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置
CN105161459B (zh) * 2015-09-07 2019-01-29 武汉华星光电技术有限公司 低温多晶硅阵列基板及其制作方法
CN105206568B (zh) * 2015-10-16 2018-06-05 京东方科技集团股份有限公司 一种低温多晶硅tft阵列基板的制备方法及其阵列基板
CN105470197B (zh) * 2016-01-28 2018-03-06 武汉华星光电技术有限公司 低温多晶硅阵列基板的制作方法
CN106024633A (zh) * 2016-06-23 2016-10-12 京东方科技集团股份有限公司 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置
CN106128961A (zh) * 2016-08-30 2016-11-16 深圳市华星光电技术有限公司 一种ltps薄膜晶体管的制作方法
CN106169473A (zh) * 2016-08-31 2016-11-30 深圳市华星光电技术有限公司 一种基于ltps的coms器件及其制作方法
CN106128962B (zh) * 2016-09-08 2019-11-05 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置
CN106449521B (zh) * 2016-10-31 2018-06-15 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN106952824A (zh) * 2017-03-08 2017-07-14 深圳市华星光电技术有限公司 一种低温多晶硅薄膜晶体管的制作方法
CN107818948B (zh) * 2017-10-31 2020-04-17 京东方科技集团股份有限公司 一种阵列基板的制备方法
CN108807422B (zh) * 2018-06-12 2020-08-04 武汉华星光电技术有限公司 阵列基板制作方法及阵列基板、显示面板
TWI759751B (zh) * 2020-05-29 2022-04-01 逢甲大學 短通道複晶矽薄膜電晶體及其方法
CN114792694A (zh) * 2021-01-08 2022-07-26 华为技术有限公司 薄膜晶体管阵列基板及其制备方法、显示面板
USD1057608S1 (en) * 2022-08-11 2025-01-14 Mima International Holdings Limited Canopy of baby carriage

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Also Published As

Publication number Publication date
TW200715562A (en) 2007-04-16
TWI434419B (zh) 2014-04-11
CN1917155B (zh) 2010-12-22
JP5399608B2 (ja) 2014-01-29
KR20070021436A (ko) 2007-02-23
CN1917155A (zh) 2007-02-21
US7759178B2 (en) 2010-07-20
US20070040174A1 (en) 2007-02-22
JP2007053356A (ja) 2007-03-01

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