TWI430374B - 接合方法 - Google Patents

接合方法 Download PDF

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TWI430374B
TWI430374B TW099140942A TW99140942A TWI430374B TW I430374 B TWI430374 B TW I430374B TW 099140942 A TW099140942 A TW 099140942A TW 99140942 A TW99140942 A TW 99140942A TW I430374 B TWI430374 B TW I430374B
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working members
heating
working
workpieces
heating tool
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TW099140942A
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TW201205696A (en
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Bor Ping Jang
Kuei Wei Huang
Wei Hung Lin
Chung Shi Liu
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Taiwan Semiconductor Mfg
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Description

接合方法
本發明係有關於積體電路之製程，且特別是有關於一種熱壓接合方法。
積體電路係形成於半導體晶圓上，其隨後被切割成半導體晶片。隨後，將這些半導體晶片接合(bonding)至封裝基材上。第1至3圖顯示傳統接合製程之各種中間階段之剖面圖。參見第1圖，提供一封裝基材100，其表面上具有連接墊108。舉起(pick up)晶片102，並將其翻轉使晶片102表面上的焊料凸塊104面朝下，施加助焊劑(flux)至焊料凸塊104上。
接著，如第2圖所示，將晶片102放置於封裝基材100上，其中焊料凸塊104係對著連接墊108放置。接著，對封裝基材100及晶片102進行回焊製程，加熱封裝基材100、晶片102及焊料凸塊104。所得之接合結構如第3圖所示。由於晶片102及焊料凸塊104的重量，焊料凸塊104在熔融時會崩塌，且會增加焊料凸塊104的寬度W1。
傳統接合結構具有許多缺點，其中一點為在接合製程後，焊料凸塊104中經常有破裂產生，且特別是在焊料凸塊104中，靠近與焊阻層112及保護層(或聚亞醯胺層)114鄰接的位置。此外，由於焊料凸塊104之寬度W1的增加，鄰近的焊料凸塊104彼此之間的距離變短，造成焊料凸塊104彼此間短路的風險提高。
本發明係提供一種接合方法，包括：提供一基材載具，其包含工作件基座；放置複數個第一工作件至此工作件基座中；舉起並放置複數個第二工作件，這些第二工作件之每一者皆置在於這些第一工作件之其中一者上；以及回焊這些第一及第二工作件之間的焊料凸塊，以同時相互接合這些第一及第二工作件。
本發明亦提供一種接合方法，包括：提供一基材載具；放置複數個第一工作件至此基材載具之工作件基座中；舉起並放置複數個第二工作件，這些第二工作件之每一者皆放置在這些第一工作件之其中一者上，其中每一第一工作件皆包含一第一焊料凸塊與每一第二工作件之一第二焊料凸塊相接觸；放置一加熱工具於這些第二工作件上，同時與這些第二工作件相接觸；使用此加熱工具來加熱這些第二工作件，以進行回焊製程，其中此第一焊料凸塊及此第二焊料凸塊係被熔融形成一第三焊料凸塊；以及在固化此第三焊料凸塊之前，對這些第二工作件同時施予一向上之力量，以增加此第三焊料凸塊之高度。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
本發明接下來將詳加討論各種的實施例的製造及討論。然而，值得注意的是，本發明所提供之這些實施例僅提供本發明之發明概念，且其可以寬廣的形式應用於各種特定情況下。在此所討論之實施例僅用於舉例說明，並非以各種形式限制本發明。
本發明係提供一種熱壓接合(thermal compression bonding,TCB)製程，亦顯示各種實施例之製造中間階段。在本說明書之各圖示及所舉實施例中，係以相似標號表示相似元件。
第4A及4B圖各自顯示基材載具20之上視圖及剖面圖。基材載具20包含複數個工作件基座22，其可排列成具有行及列之陣列。如第4B圖所示，工作件基座22可為具有工作件26之尺寸(未顯示於第4A圖及4B圖中，請參見第5圖)之基座，工作件26將可放置於此基座中。在一實施例中，加熱器24置於或內建於基材載具20中，以加熱置於工作件基座22中的工作件。在另一實施例中，基材載具20不包含加熱器。
參見第5圖，工作件26放置於工作件基座22中。在一實施例中，工作件26為封裝基材或轉接板(interposer)，在其中不含有如電晶體之主動裝置。在另一實施中，工作件26為裝置晶片，具有如電晶體(未顯示)之主動裝置於其中。金屬凸塊28形成在工作件26之頂面上。在一實施例中，所有的工作件基座22皆有工作件26填入。或者，僅有一部分，但非全部的工作件基座22皆有工作件26填入。
接著，如第6A及6B圖所示，舉起工作件30並放置於工作件26上。在工作件30底面上的金屬凸塊32與金屬凸塊28相接觸。工作件30可為包含主動裝置(未顯示)之裝置晶片(或晶粒)，其可為電晶體。或者，工作件30可為轉接板、封裝基材或其類似物。在一實施例中，金屬凸塊32為焊料凸塊，或其可為其他種類之凸塊，例如銅凸塊。然而，金屬凸塊28及金屬凸塊32至少其一為焊料凸塊。在以下所揭示之實施例中，金屬凸塊28及32皆為焊料凸塊。
將加熱工具36置於工作件30上並與其接觸，並可對工作件30施予一向下之力量(如箭頭39所示)使金屬凸塊28及32朝向彼此壓合，以防止工作件30滑動(slipping)。在第6A圖中，加熱工具36包含複數個加熱頭。當放置於工作件30上時，每一加熱頭38係對齊工作件30的其中一者，並與其接觸。在第6B圖中，加熱工具36僅包含單一個加熱頭，其尺寸大到足以接觸所有的工作件30。
接著，如第7圖所示，進行接合。以加熱工具36加熱工作件30，且熱傳導至焊料凸塊28及32而使其迴流。所得到之焊料凸塊係結合了焊料凸塊28及32，稱為焊料凸塊40。在第6A圖所示之實施例中，所有的加熱頭38皆具有相同溫度，因此所有的焊料凸塊28及32實質上皆同時被熔融。在第6B圖所示之實施例中，接觸不同工作件30之加熱頭38之表面部分，具有實質上一致的溫度，因此所有的焊料凸塊28及32實質上皆同時被熔融。在熔融焊料凸塊28及32的期間，加熱工具36(及工作件30)可維持在固定的水平上，以防止熔融的凸塊28及32更為塌陷而可能造成鄰近的凸塊28/32彼此短路。在經回焊以形成焊料凸塊40之後，加熱工具36施予一向上之力量(如箭頭42所示)，以使焊料凸塊40之高度H得以增加，且減少焊料凸塊40之水平尺寸W2。此向上之力量可藉由，例如在加熱工具36中創造出真空環境以將工作件30向上吸，來達成，其中真空環境可由管線31來產生。在回焊期間，加熱器24逐漸增溫以加熱工作件26。或者，可不加熱加熱器24。接著，降低加熱工具36之溫度，直至焊料凸塊40固化，結束接合製程。
在第4A至7圖所示之實施例中，基材載具20上所有的工作件皆同時接合。在另一實施例中，基材載具20可分割成複數個區域，每一區域包含有複數個工作件基座22。藉著使用與第4A至7圖所示之本質上相同的方法，相同區域內之複數個工作件可同時作接合，但不同區域內的工作件可在不同時間作接合。
藉由使用這些實施例，確實可改善接合製程的產能。例如，假設欲接合10個晶片至10個封裝基材，每單位時間內僅能接合一個晶片。舉起及放置每一晶片需時2秒，且加熱及回焊每一晶片需時30秒。用於接合10個晶片所需的時間為(2+30)x10，即320秒。相較之下，在本發明實施例中，雖然舉起及放置10個晶片仍需共20秒的時間，由於同時回焊所有晶片，加熱及回焊10個晶片僅需30秒。因此，總共只需50秒。如同時接合更多晶片時，則產能的增加則越明顯。既然熱壓接合製程的成本非常高，由於產能增加所減少之接合製程的成本亦極為顯著。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。再者，本發明之範圍並不限於說明書中所述之特定程序、機器、製造、物質之組合、功能、方法或步驟之實施例，熟知本領域技藝人士將可依照本發明所揭示之現有或未來所發展之特定程序、機器、製造、物質之組合、功能、方法或步驟達成相同的功能或相同的結果。因此本發明之保護範圍包含這些程序、機器、製造、物質之組合、功能、方法或步驟。此外，本發明之各個保護範圍可視為各別的實施例，且各種保護範圍及實施例之組合亦在本發明之範圍中。
20．．．基材載具
22．．．工作件基座
24．．．加熱器
26．．．工作件
28．．．金屬凸塊
30．．．工作件
31．．．管線
32．．．金屬凸塊
36．．．加熱工具
38．．．加熱頭
39．．．向下之力量
40．．．焊料凸塊
42．．．向上之力量
100．．．封裝基材
102．．．晶片
104．．．焊料凸塊
106．．．助焊劑
108．．．連接墊
112．．．阻焊層
114．．．保護層
第1至3圖顯示轉統接合製程之中間階段之剖面圖。
第4A圖顯示基材載具之上視圖。
第4B、5、6A、6B及第7圖顯示依照本發明各種實施例之熱壓合製程於中間階段之剖面圖。
20．．．基材載具
24．．．加熱器
26．．．工作件
30．．．工作件
31．．．管線
40．．．焊料凸塊
42．．．向上之力量

Claims (10)

  1. 一種接合方法，包括：放置複數個第一工作件至一基材載具之工作件基座中；舉起並放置複數個第二工作件，且該些第二工作件之每一者皆置在於該些第一工作件之其中一者上；將該些第一工作件與一第一加熱工具接觸，以該第一加熱工具加熱該些第一工作件，其中該第一加熱工具置於或內建於該基材載具中；將該些第二工作件與一第二加熱工具接觸，以該第二加熱工具加熱該些第二工作件，其中該些第二加熱工具用以施予一力量至該些第二工作件；以及回焊該些第一及第二工作件之間的焊料凸塊，以同時相互接合該些第一及第二工作件。
  2. 如申請專利範圍第1項所述之接合方法，其中該第二加熱工具包含複數個加熱頭，且其中該些加熱頭係配置為同時加熱該些第二工作件。
  3. 如申請專利範圍第1項所述之接合方法，其中該加熱工具包含單一個加熱頭，與所有的該些第二工作件相接觸，且該單一個加熱頭係配置為同時加熱該些第二工作件。
  4. 如申請專利範圍第1項所述之接合方法，更包含：在回焊步驟之前，施予一向下之力量以將該些第二工作件壓向該些第一工作件；在回焊步驟期間，保持該些第二工作件在一固定水 平上；以及在熔融該焊料凸塊之後及固化該焊料凸塊之前，對該些第二工作件施予一向上之力量，以增加該焊料凸塊之高度。
  5. 如申請專利範圍第1項所述之接合方法，其中該些第一及第二工作件係排列成一陣列。
  6. 一種接合方法，包括：提供一基材載具；放置複數個第一工作件至該基材載具之工作件基座中；舉起並放置複數個第二工作件，且該些第二工作件之每一者皆放置在該些第一工作件之其中一者上，其中每一第一工作件皆包含一第一焊料凸塊與每一第二工作件之一第二焊料凸塊相接觸；放置一第一加熱工具，同時與該些第一工作件相接觸；放置一第二加熱工具於該些第二工作件上，同時與該些第二工作件相接觸；使用該第一加熱工具來加熱該些第一工作件及使用該第二加熱工具來加熱該些第二工作件，以進行回焊製程，其中該第一焊料凸塊及該第二焊料凸塊係被熔融形成一第三焊料凸塊；以及在固化該第三焊料凸塊之前，對該些第二工作件同時施予一向上之力量，以增加該第三焊料凸塊之高度。
  7. 如申請專利範圍第6項所述之接合方法，其中該第 二加熱工具包含複數個加熱頭，且其中該些加熱頭係配置為同時加熱該些第二工作件。
  8. 如申請專利範圍第6項所述之接合方法，其中該第二加熱工具包含單一個加熱頭，且其中該單一個加熱頭係配置為同時加熱該些第二工作件。
  9. 如申請專利範圍第6項所述之接合方法，更包含在回焊之步驟期間及之前，施予一向下之力量以將該些第二工作件壓向該些第一工作件。
  10. 如申請專利範圍第6項所述之接合方法，其中該些第一及第二工作件係排列成一陣列。
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US20120018494A1 (en) 2012-01-26
CN104966679A (zh) 2015-10-07
KR101214336B1 (ko) 2012-12-24
KR20120015256A (ko) 2012-02-21
CN102347254A (zh) 2012-02-08
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US8381965B2 (en) 2013-02-26
US20130126591A1 (en) 2013-05-23

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